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NXP Semiconductors PMR280UN,115
- Part No.:
- PMR280UN,115
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- SC-75, SOT-416
- Datasheet:
-
PMR280UN,115.pdf
- Description:
- MOSFET N-CH 20V 980MA SC75
- Quantity:
- Payment:
- Shipping:
Inventory:2,793
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Product details
Overview
PMR280UN from Nexperia is an N-channel enhancement-mode TrenchMOS FET in SOT416 (SC-75) package, designed for low-voltage switching in space-constrained portable electronics. It delivers 280 mΩ RDS(on) at VGS = 4.5 V and ID = 0.2 A, supports 20 V VDS, and features a low 0.7 V typical gate threshold voltage for efficient 1.8 V–2.5 V logic-level drive.
For engineers reviewing the PMR280UN datasheet, PMR280UN pinout, PMR280UN application, or PMR280UN equivalent, this page provides verified electrical parameters, thermal resistance (235 K/W), dynamic gate charge (0.89 nC), safe operating area limits, and real-world use context for battery-powered load switching and driver circuits.
Technical Context
This device uses TrenchMOS technology to achieve ultra-low on-resistance in a footprint 63% smaller than SOT23. Its 3-pin SC-75 package enables high-density PCB layouts while maintaining robust thermal performance up to 150 °C junction temperature.
The PMR280UN operates as a single N-channel power switch with fully specified static (VGS(th), RDS(on), V(BR)DSS) and dynamic (QG(tot), Ciss, td(on)) characteristics across -55 °C to +150 °C. It includes a built-in source-drain diode with 0.83 V forward voltage at 0.3 A.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V maximum - supports operation in 12 V and lower battery systems without breakdown risk |
| RDS(on) | 280 mΩ typ @ VGS = 4.5 V, ID = 0.2 A - minimizes conduction loss in portable DC-DC and load-switching paths |
| VGS(th) | 0.7 V typ @ ID = 0.25 mA - enables reliable turn-on with 1.8 V microcontroller GPIOs |
| ID | 0.98 A max @ Tsp = 25 °C - suitable for sub-1 A loads such as LED drivers and sensor biasing |
| QG(tot) | 0.89 nC typ - ensures fast, low-energy switching with minimal gate drive power |
| Rth(j-sp) | 235 K/W - defines thermal bottleneck between die and PCB solder point under continuous operation |
| Ciss | 45 pF typ @ VDS = 20 V - impacts high-frequency gate drive stability and EMI behavior |
Pinout & Package
SOT416 (SC-75) is a 3-pin ultra-small surface-mount plastic package measuring 1.75 mm × 0.95 mm × 0.9 mm, optimized for high-volume portable assembly and reflow compatibility.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | G (Gate) | Control input requiring ≤100 nA leakage; drives internal MOS channel via 0.89 nC total gate charge |
| 2 | S (Source) | Reference node for gate drive and current return path; forms cathode of integrated body diode |
| 3 | D (Drain) | High-side or low-side power output terminal; rated for 20 V blocking and 0.98 A continuous conduction |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 280 mΩ at 4.5 V drive reduces I²R losses by >40% vs. comparable SC-70 MOSFETs in 0.5 A loads |
| TrenchMOS architecture | Enables stable threshold voltage down to -55 °C and predictable RDS(on) drift over temperature |
| 1.8 V logic-compatible VGS(th) | Guarantees turn-on with modern ultra-low-voltage MCUs without level-shifting circuitry |
| SC-75 footprint | 63% smaller board area than SOT23 - critical for wearables and hearing aids where PCB real estate is premium |
| Integrated source-drain diode | 0.83 V VSD at 0.3 A enables synchronous rectification or flyback clamping without external diode |
Applications
| Smartphone Power Management | Wireless Earbud Battery Switching |
|---|---|
Use Scenario: Controlling power to auxiliary sensors (e.g., ambient light, proximity) during sleep mode to extend standby time. IC Role / Device Role / Timing Role: Low-side load switch enabling/disabling 3.3 V rail segments with <1 µA off-state leakage. Use Value: Achieves sub-µA system quiescent current using 1 µA IDSS and 10 nA IGSS specs, directly extending battery life in always-on devices. | Use Scenario: Isolating charging circuitry from main battery during active playback to prevent interference and thermal coupling. IC Role / Device Role / Timing Role: High-speed, low-loss power path switch activated by Bluetooth SoC GPIO with 4.5 ns td(on). Use Value: 0.89 nC QG(tot) and 10 ns rise time allow clean, jitter-free switching at 10 kHz control rates without gate drive overhead. |
| Fitness Tracker Display Backlight | Portable Medical Sensor Biasing |
Use Scenario: PWM dimming of OLED display backlight in compact wrist-worn form factor. IC Role / Device Role / Timing Role: Low-side PWM switch driving 0.3 A LED string with minimal voltage drop and thermal rise. Use Value: 280 mΩ RDS(on) limits conduction loss to <25 mW at 0.3 A, avoiding local hot spots on thermally constrained flex PCBs. | Use Scenario: Enabling precision analog front-end (AFE) during measurement cycles while powering down between readings. IC Role / Device Role / Timing Role: Precision on/off control of 2.5 V AFE supply with tight VGS(th) tolerance (±0.25 V) ensuring consistent activation timing. Use Value: 0.45–1.0 V VGS(th) range guarantees reliable turn-on across temperature and process variation, eliminating false disable events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel low-voltage switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2004K-7 | RDS(on) = 200 mΩ @ 4.5 V (lower), but larger SOT-23 package and higher QG (1.4 nC) | Better conduction efficiency but requires more PCB area and stronger gate drive | Choose when lower RDS(on) outweighs size constraints and gate drive capability permits |
| AO3400A | RDS(on) = 42 mΩ @ 10 V but only 200 mΩ @ 2.5 V; VGS(th) = 1.0–2.0 V (higher and wider spread) | Less suitable for 1.8 V logic drive; better for 3.3 V+ systems with margin for threshold variation | Prefer when operating from ≥3.3 V rails and tighter thermal budget allows higher RDS(on) |
Compared with DMN2004K-7 and AO3400A, the PMR280UN uniquely balances ultra-small SC-75 footprint, 1.8 V logic compatibility, and 280 mΩ RDS(on) - making it optimal for space- and voltage-constrained portable designs where gate drive strength is limited.
Availability
PMR280UN is available at Aetrix Electronics and suitable for smartphone power management, wireless earbud battery switching, fitness tracker display backlighting, portable medical sensor biasing, and other portable electronics applications requiring stable component supply and long-term lifecycle support.
Supply support for PMR280UN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on automotive, industrial, computing, consumer, and wearable markets.
The PMR280UN belongs to Nexperia's TrenchMOS ultra-low-level FET product line, engineered specifically for high-efficiency, miniaturized load switching in battery-powered portable devices.
FAQ
What is the maximum continuous drain current rating for PMR280UN at 100 °C solder point temperature?
The PMR280UN supports 0.62 A continuous drain current at Tsp = 100 °C and VGS = 4.5 V, as specified in Table 5 (Limiting values). This derated value reflects thermal limitations of the SC-75 package and must be used in thermal design calculations for sustained operation above ambient temperature.
Does PMR280UN have a built-in body diode, and what is its forward voltage?
Yes, the PMR280UN includes an integrated source-drain body diode. Its forward voltage is 0.83 V typical at IS = 0.3 A and Tj = 25 °C, as listed in Table 7 (Characteristics). This diode supports freewheeling and reverse-polarity protection without external components.
Can PMR280UN be driven directly by a 1.8 V microcontroller GPIO without level shifting?
Yes - the PMR280UN has a typical VGS(th) of 0.7 V and guaranteed maximum of 1.0 V at 25 °C, enabling full enhancement with 1.8 V logic. At 1.8 V VGS, RDS(on) is 460–660 mΩ (Table 7), sufficient for low-current switching applications like sensor enable/disable.
What is the thermal resistance from junction to solder point (Rth(j-sp)) for PMR280UN, and why does it matter?
The PMR280UN has Rth(j-sp) = 235 K/W (Table 6), defining the dominant thermal path from die to PCB copper. This value is critical for calculating junction temperature rise under power dissipation and must be used - not Rth(j-a) - in compact, high-density layouts where airflow is negligible.
Is PMR280UN qualified for automotive applications per AEC-Q101?
No - the PMR280UN is not AEC-Q101 qualified. The datasheet explicitly states it is "non-automotive qualified" and unsuitable for safety-critical or automotive environments unless separately validated by the customer. Its specification targets consumer and portable industrial applications only.
PMR280UN,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- SC-75, SOT-416
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 980mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 340mOhm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.89 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 45 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 530mW (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-75
PMR280UN,115 FAQ
1.How can I place an order for PMR280UN,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PMR280UN,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMR280UN,115 reliable?
The price and inventory of PMR280UN,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMR280UN,115 is usually 5 days.
3.What payment methods are accepted for PMR280UN,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMR280UN,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMR280UN,115?
PMR280UN,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMR280UN,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMR280UN,115?
For technical support, including PMR280UN,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMR280UN,115 requirements.
6.How does Aetrix verify that PMR280UN,115 is sourced from the original manufacturer or authorized distributors?
All PMR280UN,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMR280UN,115 meets industry standards.
7.What is the process for return or replacement of PMR280UN,115?
All PMR280UN,115 units undergo pre-shipment inspection (PSI). If there is an issue with PMR280UN,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMR280UN,115 part is unused and in its original packaging.
Return procedure for PMR280UN,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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