NXP Semiconductors PMR290XN,115

Overview

PMR290XN from Nexperia is an N-channel enhancement-mode TrenchMOS™ power MOSFET in SC-75 (SOT416) package, designed for low-voltage switching in space-constrained portable electronics. It delivers R_DS(on) ≤ 350 mΩ at V_GS = 4.5 V, supports V_DS ≤ 20 V and continuous I_D up to 0.97 A at T_sp = 25 °C, and features low threshold voltage (V_GS(th) = 0.5–1.5 V) for efficient gate drive in battery-powered systems.

For engineers reviewing the PMR290XN datasheet, PMR290XN pinout, PMR290XN application, or PMR290XN equivalent, key selection criteria include its ultra-small footprint (63% smaller than SOT23), low on-resistance at 2.5 V gate drive, thermal resistance of 235 K/W (junction-to-solder point), and suitability for high-density DC-DC converter load switches and LED driver control stages.

Technical Context

This device employs µTrenchMOS™ technology to achieve enhanced channel density and reduced specific on-resistance. Its gate threshold voltage range (0.35–1.8 V across temperature) enables reliable turn-on with 2.5 V logic-level signals, while the low Q_g(tot) (0.72 nC) and fast switching times (t_d(on) = 5 ns, t_f = 6 ns) support high-frequency operation in portable power management circuits.

The integrated source-drain diode (V_SD = 0.8–1.2 V at I_S = 0.3 A) supports synchronous rectification and flyback recovery in compact DC-DC topologies. Thermal design is anchored to solder-point temperature (T_sp), with normalized power derating defined down to −55 °C and up to +150 °C junction temperature.

Key Specifications

Pinout & Package

Package: SC-75 (SOT416), plastic surface-mounted, 3-lead package with 0.95 mm × 1.45 mm footprint and 0.5 mm pitch. Dimensions per IEC 60134 outline; compatible with reflow soldering per Fig 15 footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage MOSFET applications.

Compared with DMN2004LK-7 and AO3400, the PMR290XN uniquely balances ultra-compact SC-75 size, guaranteed 2.5 V turn-on, and sub-1 nC gate charge-making it optimal for space- and voltage-constrained portable power switches where layout density and low-V_DD compatibility are primary constraints.

Availability

PMR290XN is available at Aetrix Electronics and suitable for portable load switching, LED backlight control, USB-C power path management, and compact DC-DC synchronous rectification requiring stable component supply and long-term industrial availability.

Supply support for PMR290XN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and power MOSFET semiconductors, formed in 2017 from the former NXP Standard Products business. It serves automotive, industrial, computing, consumer, and wearable markets with high-volume, high-reliability components.

The PMR290XN belongs to Nexperia's µTrenchMOS™ low-level FET product line, engineered specifically for ultra-compact, low-voltage switching in battery-powered portable electronics where minimal PCB area and logic-level gate drive are mandatory.

FAQ

What is the maximum continuous drain current for PMR290XN at 100 °C solder point temperature?

The PMR290XN supports a continuous drain current of 0.61 A at T_sp = 100 °C and V_GS = 4.5 V, as specified in Table 3 of the datasheet. This derated value reflects thermal limitations of the SC-75 package under elevated ambient conditions and must be used for thermal design validation in enclosed or high-temperature environments. The PMR290XN's R_DS(on) increases to 464–560 mΩ at 150 °C junction temperature, further constraining usable current in sustained operation.

Does PMR290XN support 1.8 V logic-level gate drive?

Yes, the PMR290XN has a gate-source threshold voltage (V_GS(th)) ranging from 0.5 V to 1.5 V at 25 °C, with a minimum of 0.35 V at 150 °C. This guarantees reliable turn-on with 1.8 V microcontroller outputs. However, R_DS(on) rises to 460–550 mΩ at V_GS = 2.5 V and I_D = 0.1 A, so the PMR290XN is best applied where moderate on-resistance is acceptable-such as low-duty-cycle load switching rather than continuous high-current conduction.

What is the thermal resistance from junction to solder point for PMR290XN?

The PMR290XN has a maximum thermal resistance R_th(j-sp) of 235 K/W, as stated in Table 4. This parameter enables direct thermal modeling from die junction to PCB copper pad without requiring external heatsinks. For example, at 0.5 W power dissipation and 25 °C solder point temperature, the junction temperature reaches approximately 142.5 °C-within the rated −55 °C to +150 °C operating range only if peak power is brief or averaged.

Can PMR290XN be used in high-frequency PWM applications above 1 MHz?

Yes, the PMR290XN is suitable for PWM frequencies up to and beyond 1 MHz due to its fast switching characteristics: t_d(on) = 5 ns, t_r = 11 ns, t_d(off) = 11 ns, and t_f = 6 ns (tested at V_DD = 10 V, R_G = 6 Ω). Its low total gate charge (0.72 nC) and small input capacitance (C_iss = 34 pF) reduce gate drive power and propagation delay, making the PMR290XN effective in compact DC-DC converters and Class-D audio output stages.

Is there an integrated body diode in PMR290XN, and what is its forward voltage?

Yes, the PMR290XN includes an inherent source-drain body diode with a forward voltage (V_SD) of 0.8–1.2 V at I_S = 0.3 A and V_GS = 0 V, as specified in Table 5. This diode supports freewheeling current in inductive loads and enables synchronous rectification in flyback or boost converters. Its relatively low V_SD improves efficiency compared to discrete Schottky solutions in low-current (<0.5 A) applications.