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NXP Semiconductors PMR370XN,115
- Part No.:
- PMR370XN,115
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- SC-75, SOT-416
- Datasheet:
-
PMR370XN,115.pdf
- Description:
- MOSFET N-CH 30V 840MA SC75
- Quantity:
- Payment:
- Shipping:
Inventory:9,721
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Product details
Overview
PMR370XN from Nexperia is an N-channel enhancement-mode TrenchMOS™ power MOSFET in SC-75 (SOT416) package, designed for low-voltage switching in space-constrained portable electronics. It delivers RDS(on) ≤ 440 mΩ at VGS = 4.5 V, supports continuous drain current up to 0.84 A at Tsp = 25 °C, and operates with VDS ≤ 30 V - enabling efficient load switching in battery-powered USB peripherals and sensor interface circuits.
For engineers reviewing the PMR370XN datasheet, PMR370XN pinout, PMR370XN application, or PMR370XN equivalent, key selection criteria include its ultra-small footprint (63% smaller than SOT23), low threshold voltage (VGS(th) = 0.5–1.5 V), and guaranteed RDS(on) performance across −55 °C to +150 °C junction temperature range.
Technical Context
The PMR370XN employs µTrenchMOS™ technology to achieve low on-resistance and fast switching in a 3-pin surface-mount package. Its gate threshold voltage (0.5–1.5 V at 25 °C) enables direct drive from 1.8 V and 3.3 V logic, while its RDS(on) remains stable up to 150 °C (max 748 mΩ).
Dynamic parameters include Qg(tot) = 0.65 nC, Ciss = 37 pF, and switching times under 15 ns (td(on) = 6.5 ns, tf = 5.5 ns), supporting high-frequency PWM control in compact DC-DC regulators and LED drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V maximum - supports 24 V rail and 5 V/3.3 V logic-level systems without level-shifting. |
| RDS(on) | 370–440 mΩ at VGS = 4.5 V, Tj = 25 °C - ensures <100 mW conduction loss at 0.5 A load current. |
| ID (continuous) | 0.84 A at Tsp = 25 °C - suitable for driving small solenoids, LEDs, or logic-level signal routing. |
| VGS(th) | 0.5–1.5 V at ID = 0.25 mA - compatible with 1.8 V microcontroller GPIOs without gate boosting. |
| Ptot | 0.53 W at Tsp = 25 °C - enables operation in thermally limited PCB areas with minimal heatsinking. |
| Ciss | 37 pF at VDS = 25 V - reduces gate drive power and improves EMI behavior in high-speed switching. |
Pinout & Package
Package: SC-75 (SOT416), plastic surface-mounted, 3-lead package with 0.95 mm × 1.45 mm footprint and 0.5 mm pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Control terminal; accepts logic-level input (VGS(th) ≤ 1.5 V); requires <100 nA leakage current at ±12 V. |
| 2 | Source (S) | Reference node for gate drive and current return path; internally connected to substrate; diode anode for body diode. |
| 3 | Drain (D) | Power output terminal; handles up to 0.84 A DC; connects to load or supply rail; body diode cathode. |
Key Features
| Feature | Design Value |
|---|---|
| µTrenchMOS™ technology | Enables 440 mΩ RDS(on) in SC-75 - achieves higher current density than planar MOSFETs of same size. |
| Ultra-small SC-75 footprint | 63% smaller than SOT23 - saves PCB area in wearables, hearing aids, and compact IoT sensors. |
| Low VGS(th) | 0.5–1.5 V range - eliminates need for external gate driver when interfacing with 1.8 V/3.3 V MCUs. |
| Guaranteed RDS(on) over temperature | 629–748 mΩ at Tj = 150 °C - ensures predictable conduction loss in thermally stressed environments. |
| Fast switching | td(on) = 6.5 ns, tf = 5.5 ns - supports >1 MHz PWM in portable power management without excessive switching loss. |
Applications
| USB Peripheral Power Switching | Low-Power Sensor Interface |
|---|---|
|
Use Scenario: Selectively powering USB-connected accessories (e.g., Bluetooth modules, microSD card readers) from a shared 5 V rail in handheld devices. IC Role / Device Role / Timing Role: Low-side load switch controlling power delivery path; operates in static on/off mode with no timing-critical constraints. Use Value: Prevents standby current leakage (<1 µA IDSS) and minimizes voltage drop (<200 mV at 0.5 A) due to low RDS(on). |
Use Scenario: Enabling/disabling analog sensor subcircuits (e.g., temperature, ambient light) between measurement cycles in battery-operated nodes. IC Role / Device Role / Timing Role: Precision power gating element; driven by MCU GPIO with minimal propagation delay (<15 ns total switching time). Use Value: Reduces average system current by >95% during sleep via sub-µA off-state leakage and fast turn-off capability. |
| Portable LED Driver Stage | Logic-Level Signal Routing |
|
Use Scenario: PWM-controlled current sink for white LEDs in smartwatches and fitness trackers using 3.3 V supply. IC Role / Device Role / Timing Role: High-frequency switching element; operates at 1–2 MHz with controlled rise/fall times to minimize EMI. Use Value: Delivers consistent brightness with <5.5 ns fall time and low gate charge (0.65 nC), reducing MCU drive burden. |
Use Scenario: Isolating or multiplexing digital signals (e.g., I²C lines, reset signals) between subsystems in space-limited embedded controllers. IC Role / Device Role / Timing Role: Bidirectional signal switch; leverages low Ciss (37 pF) and negligible Miller effect for clean edge integrity. Use Value: Maintains signal fidelity up to 10 MHz with <0.5 ns added propagation delay and no level translation required. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel low-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2004LKQ-7 | RDS(on) = 200 mΩ @ VGS = 4.5 V; SOT-723 package (smaller than SC-75); higher gate charge (0.9 nC). | Better conduction efficiency but slower switching; tighter layout tolerance due to 0.5 mm pitch and no thermal pad. | Preferred when lower RDS(on) dominates over switching speed and thermal margin is sufficient. |
| AO3400 | RDS(on) = 44 mΩ @ VGS = 10 V; SOT-23 package; requires ≥2.5 V VGS(th); higher Ptot (1.4 W). | Higher current capacity (5.7 A) but incompatible with 1.8 V logic; larger footprint increases board area. | Chosen for higher-power loads where gate drive voltage ≥2.5 V is available and space permits SOT-23. |
Compared with DMN2004LKQ-7 and AO3400, the PMR370XN offers optimal balance of ultra-compact size, 1.8 V logic compatibility, and verified thermal performance in thin-profile portable assemblies - making it uniquely suited for applications where PCB real estate and low-voltage drive are co-constrained.
Availability
PMR370XN is available at Aetrix Electronics and suitable for USB peripheral switching, portable LED drivers, low-power sensor interfaces, and logic-level signal routing requiring stable component supply across industrial and consumer design cycles.
Supply support for PMR370XN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products division, with focus on automotive, industrial, computing, and wearable markets.
The PMR370XN belongs to Nexperia's µTrenchMOS™ low-level FET product line, engineered specifically for space- and power-constrained portable electronics requiring reliable, logic-level-compatible switching in sub-2 mm² footprints.
FAQ
What is the maximum continuous drain current rating for PMR370XN?
The PMR370XN supports a maximum continuous drain current of 0.84 A at solder point temperature (Tsp) = 25 °C and VGS = 4.5 V. At elevated temperatures, this derates to 0.53 A at Tsp = 100 °C. The PMR370XN datasheet specifies these values in Table 3 under "Limiting values" and confirms them in Figure 2, which plots normalized current versus solder point temperature.
Does PMR370XN support direct drive from a 1.8 V microcontroller GPIO?
Yes, the PMR370XN supports direct drive from 1.8 V logic: its gate-source threshold voltage (VGS(th)) is specified from 0.5 V to 1.5 V at ID = 0.25 mA and Tj = 25 °C. This ensures reliable turn-on even at 1.8 V, and the PMR370XN maintains usable RDS(on) (≤650 mΩ) at VGS = 2.5 V per Table 5.
What is the thermal resistance from junction to solder point for PMR370XN?
The PMR370XN has a maximum thermal resistance from junction to solder point (Rth(j-sp)) of 235 K/W, as stated in Table 4 under "Thermal characteristics." This value applies under steady-state conditions and is critical for calculating junction temperature rise in thermally constrained PCB layouts.
Is PMR370XN pin-compatible with other SC-75 MOSFETs like PMR380XN?
No, PMR370XN is not confirmed pin-compatible with PMR380XN or other SC-75 MOSFETs. While both use the SOT416 package, the PMR370XN datasheet does not declare pin-to-pin equivalence with any alternate part. Pin mapping is standardized (G-S-D on pins 1–2–3), but electrical characteristics and safe operating area differ significantly - always verify layout compatibility against each device's individual pinout and thermal profile.
What is the typical gate charge of PMR370XN and how does it affect drive requirements?
The PMR370XN has a typical total gate charge (Qg(tot)) of 0.65 nC at VDD = 15 V and VGS = 4.5 V, as shown in Table 5. This low gate charge enables efficient switching with minimal drive current - for example, at 1 MHz PWM, average gate current remains below 0.65 µA - reducing stress on MCU GPIOs and simplifying gate driver selection for the PMR370XN.
PMR370XN,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- SC-75, SOT-416
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 840mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 440mOhm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.65 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 37 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 530mW (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-75
PMR370XN,115 FAQ
1.How can I place an order for PMR370XN,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PMR370XN,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMR370XN,115 reliable?
The price and inventory of PMR370XN,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMR370XN,115 is usually 5 days.
3.What payment methods are accepted for PMR370XN,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMR370XN,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMR370XN,115?
PMR370XN,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMR370XN,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMR370XN,115?
For technical support, including PMR370XN,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMR370XN,115 requirements.
6.How does Aetrix verify that PMR370XN,115 is sourced from the original manufacturer or authorized distributors?
All PMR370XN,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMR370XN,115 meets industry standards.
7.What is the process for return or replacement of PMR370XN,115?
All PMR370XN,115 units undergo pre-shipment inspection (PSI). If there is an issue with PMR370XN,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMR370XN,115 part is unused and in its original packaging.
Return procedure for PMR370XN,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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