NXP Semiconductors PMR400UN,115

Overview

PMR400UN from Nexperia is an N-channel enhancement-mode TrenchMOS FET in SOT416 (SC-75) package, designed for ultra-low-level switching in space-constrained portable systems. It delivers 30 V V_DS, 0.8 A continuous drain current at 4.5 V_GS, and a typical R_DS(on) of 400 mΩ at V_GS = 4.5 V and I_D = 0.2 A - enabling efficient load switching in battery-powered wearables and sensor nodes.

For engineers reviewing the PMR400UN datasheet, PMR400UN pinout, PMR400UN application, or PMR400UN equivalent, this page provides verified electrical specifications, thermal derating curves, gate charge characteristics, junction-to-solder-point thermal resistance (235 K/W), and validated alternatives for low-voltage, low-power discrete MOSFET selection.

Technical Context

This device employs TrenchMOS technology to achieve low threshold voltage (0.45–1.0 V typ.) and stable R_DS(on) across temperature - with V_GS(th) as low as 0.25 V at 150 °C and R_DS(on) rising to 816 mΩ max at 150 °C under 4.5 V_GS. Its 3-pin SOT416 footprint supports high-density PCB layouts.

Dynamic parameters include 0.89 nC total gate charge, 4.8 pF reverse transfer capacitance, and fast switching times (t_d(on) = 4 ns, t_f = 4.5 ns), making it suitable for high-frequency PWM control in DC-DC load switches and LED drivers.

Key Specifications

Pinout & Package

SOT416 (SC-75) plastic surface-mounted package: 1.75 mm × 0.95 mm × 0.9 mm body, 3-lead ultra-small outline optimized for <63% footprint reduction vs. SOT23.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage MOSFET applications.

Compared with PMR400UN, DMN2004LK-7 offers lower R_DS(on) in a smaller package but sacrifices 10 V of blocking margin, while AO3400 trades ultra-low-threshold operation and footprint efficiency for higher current handling and less sensitive gate drive - making PMR400UN optimal for 1.8–4.5 V logic-driven, space-limited 30 V switching.

Availability

PMR400UN is available at Aetrix Electronics and suitable for smart wearable power switching, low-voltage sensor interface, and USB-C peripheral load control requiring stable component supply across production lifecycles.

Supply support for PMR400UN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on automotive, industrial, computing, consumer, and wearable markets.

The PMR400UN belongs to Nexperia's ultra-low-level TrenchMOS FET product line, engineered specifically for space-constrained, battery-operated applications demanding logic-level gate drive, minimal conduction loss, and robust thermal behavior in SC-75 packaging.

FAQ

What is the maximum continuous drain current for PMR400UN at 100 °C solder point temperature?

The PMR400UN supports 0.51 A continuous drain current at a solder point temperature of 100 °C and V_GS = 4.5 V, as specified in the Limiting Values table. This derating reflects thermal constraints of the SOT416 package and must be applied when ambient or PCB thermal conditions elevate the solder joint temperature beyond 25 °C. Designers should reference Figure 1 for normalized current vs. solder point temperature to validate operation across expected thermal profiles.

Does PMR400UN support direct drive from a 1.8 V microcontroller GPIO?

Yes, PMR400UN supports direct drive from a 1.8 V microcontroller GPIO due to its ultra-low gate threshold voltage: V_GS(th) is specified from 0.45 V (min) to 1.0 V (max) at 25 °C, and remains functional down to 0.25 V at 150 °C. At V_GS = 1.8 V and I_D = 0.075 A, R_DS(on) is 580–830 mΩ - sufficient for low-current switching in always-on sensor nodes and wearables where speed is secondary to voltage compatibility.

What is the thermal resistance from junction to solder point (R_th(j-sp)) for PMR400UN?

The PMR400UN has a maximum thermal resistance of 235 K/W from junction to solder point (R_th(j-sp)), as stated in Table 6. This parameter defines how effectively heat transfers from the silicon die to the PCB copper via the SOT416 leads, and is critical for calculating junction temperature rise under steady-state power dissipation. It assumes standard reflow-soldered mounting on a 1 cm² 1-oz copper pad per lead, per Nexperia's recommended footprint in Figure 15.

Can PMR400UN be used in high-frequency PWM applications above 1 MHz?

Yes, PMR400UN is suitable for high-frequency PWM applications up to and beyond 1 MHz due to its fast switching characteristics: t_d(on) = 4 ns, t_r = 7.5 ns, t_d(off) = 18 ns, and t_f = 4.5 ns (measured at V_DS = 15 V, V_GS = 4.5 V, R_G(ext) = 6 Ω). Its low 0.89 nC total gate charge and 4.8 pF Crss further support clean edge transitions and reduced Miller effect - provided gate drive impedance and PCB layout minimize parasitic inductance.

Is PMR400UN qualified for automotive applications?

No, PMR400UN is not automotive-qualified. As stated in section 11.3 of the datasheet, "Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use." The PMR400UN is intended for consumer, wearable, and industrial applications; it lacks AEC-Q101 qualification, automotive-grade screening, and extended temperature validation beyond its specified -55 °C to +150 °C junction range.