NXP Semiconductors PMR670UPE,115

Overview

PMR670UPE from Nexperia is a P-channel enhancement-mode Trench MOSFET in SOT416 (SC-75) package, rated for -20 V drain-source voltage, -480 mA continuous drain current at 25 °C, and 0.67 Ω typical R_DS(on) at V_GS = -4.5 V. It serves as a high-speed high-side load switch in compact power management circuits.

For engineers reviewing the PMR670UPE datasheet, PMR670UPE pinout, PMR670UPE application, or PMR670UPE equivalent, key selection criteria include its AEC-Q101 qualification, 2 kV HBM ESD rating, fast switching performance, and thermal resistance of 360 K/W (junction-to-ambient, with 1 cm² drain pad), critical for automotive and space-constrained industrial designs.

Technical Context

This discrete MOSFET uses Trench MOSFET technology to achieve low on-resistance and fast switching. Its gate threshold voltage ranges from -0.5 V to -1.3 V, enabling reliable turn-on with low-voltage logic-level drive (e.g., 1.8 V or 2.5 V microcontroller outputs).

The device features an integrated source-drain diode with V_SD = -0.84 V at -300 mA and is characterized for operation from -55 °C to 150 °C junction temperature. Its dynamic parameters include 0.76 nC typical total gate charge and 58 pF typical input capacitance, supporting efficient high-frequency switching up to several MHz.

Key Specifications

Pinout & Package

SOT416 (SC-75) is a 3-pin ultra-small surface-mount plastic package (1.7 mm × 1.2 mm × 0.6 mm) optimized for high-density PCB layouts and automated assembly. The drain pad occupies the center position for enhanced thermal conduction to the PCB.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Compared with DMN2011LFG-7 and PSMN021-25YL, the PMR670UPE uniquely balances ultra-small SC-75 size, AEC-Q101 compliance, and sub-0.7 Ω R_DS(on), making it optimal for space-constrained automotive and portable industrial modules requiring both reliability and efficiency.

Availability

PMR670UPE is available at Aetrix Electronics and suitable for automotive body electronics, industrial sensor interface power switching, and wearable device battery management requiring stable component supply across multi-year production cycles.

Supply support for PMR670UPE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and power MOSFET semiconductors, formed in 2017 from the former NXP Standard Products business and focused on automotive, industrial, computing, and consumer markets.

The PMR670UPE belongs to Nexperia's TrenchMOS portfolio, engineered specifically for high-reliability, space-efficient power switching in automotive and portable electronics where low R_DS(on), fast switching, and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum continuous drain current rating for PMR670UPE at 100 °C ambient temperature?

The PMR670UPE supports -300 mA continuous drain current at Tamb = 100 °C, as specified in Table 5 (Limiting values). This derating reflects thermal constraints under standard FR4 PCB mounting with single-sided copper; actual performance may improve with enhanced thermal pads or forced airflow. Always verify junction temperature using R_th(j-a) = 415 K/W max and power dissipation calculations in your specific layout.

Is PMR670UPE suitable for high-side switching in 12 V automotive systems?

Yes, the PMR670UPE is explicitly designed for high-side load switching in automotive applications. Its -20 V V_DS rating provides margin above 12 V nominal systems, AEC-Q101 qualification confirms reliability under automotive stress profiles, and its low R_DS(on) minimizes voltage drop and heat generation during sustained 400 mA operation in modules like door controllers and lighting drivers.

Does PMR670UPE require a gate resistor for safe operation with a 3.3 V microcontroller?

No external gate resistor is required for basic turn-on/turn-off with a 3.3 V MCU GPIO, as the PMR670UPE's V_GS(th) (-0.5 to -1.3 V) ensures full enhancement and its 58 pF C_iss imposes minimal capacitive load. However, a 10–100 Ω series resistor is recommended to damp ringing and control dV/dt in noisy environments or when driving inductive loads.

What is the thermal resistance from junction to solder point (R_th(j-sp)) for PMR670UPE?

The PMR670UPE has a specified R_th(j-sp) of 160 K/W (Table 6), measured from junction to solder point on an FR4 PCB with standard footprint. This value enables accurate thermal modeling when the drain pad is connected to internal copper planes or external thermal vias, supporting junction temperature prediction under real-world PCB thermal designs.

Can PMR670UPE be used in reverse polarity protection circuits?

Yes, the PMR670UPE is commonly deployed in reverse polarity protection due to its P-channel configuration and low R_DS(on). When placed in the high-side rail with source tied to input and drain to load, it blocks reverse voltage while passing forward current with minimal dropout. Its -20 V V_DS rating and -1.3 V max V_GS(th) ensure reliable operation even with weak or fluctuating input sources.