NXP Semiconductors PMR780SN,115
- Part No.:
- PMR780SN,115
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- SC-75, SOT-416
- Datasheet:
-
PMR780SN,115.pdf
- Description:
- MOSFET N-CH 60V 550MA SC75
- Quantity:
- Payment:

- Shipping:

Inventory:5,572
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Product details
Overview
PMR780SN from Nexperia is an N-channel µTrenchMOS™ standard-level power MOSFET in SC-75 (SOT416) package, designed for low-voltage switching applications requiring compact size and fast turn-on/turn-off. It delivers VDS = 60 V, RDS(on) ≤ 920 mΩ at VGS = 10 V and ID = 0.3 A, Ptot = 0.53 W, and supports driver circuits in portable appliances.
For engineers reviewing the PMR780SN datasheet, PMR780SN pinout, PMR780SN application, or PMR780SN equivalent, this page provides verified electrical parameters, thermal behavior, gate charge metrics (Qg(tot) = 1.05 nC), diode forward voltage (VSD = 0.83–1.2 V), and SC-75 footprint compatibility for space-constrained PCB designs.
Technical Context
This device uses TrenchMOS™ technology to achieve low on-resistance in a miniature surface-mount package. Its gate threshold voltage VGS(th) ranges from 1.0 V to 3.0 V at Tj = 25 °C, enabling reliable enhancement-mode operation with standard 3.3 V or 5 V logic drive.
Dynamic performance includes td(on) = 2 ns, tr = 4 ns, td(off) = 5 ns, and tf = 2.2 ns under VDD = 30 V, RL = 15 Ω, and RG = 6 Ω conditions - optimized for high-frequency switching in battery-powered systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V maximum drain-source voltage - supports 24 V rail and transient margin in industrial/portable DC systems |
| RDS(on) | 780–920 mΩ at VGS = 10 V, ID = 0.3 A - enables <100 mW conduction loss at 350 mA continuous current |
| ID (DC) | 0.55 A at Tsp = 25 °C - suitable for low-power load switching (e.g., LED backlight, sensor bias, USB port control) |
| Qg(tot) | 1.05 nC - reduces gate drive power and allows use with low-current microcontroller GPIOs |
| VGS(th) | 1.0–3.0 V at Tj = 25 °C - ensures turn-on with 3.3 V logic without level-shifting circuitry |
| VSD | 0.83–1.2 V at IS = 0.3 A - defines reverse recovery behavior and body diode conduction loss in flyback or H-bridge topologies |
| Tj max | +150 °C junction temperature - permits operation in sealed enclosures or near heat sources with proper thermal relief |
Pinout & Package
SC-75 (SOT416) plastic surface-mounted package: 1.9 mm × 1.1 mm × 0.9 mm footprint, 63% smaller than SOT23, optimized for high-density portable PCB layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Control terminal; requires ≤±20 V drive; low input capacitance (Ciss = 23 pF) minimizes drive energy |
| 2 | Source (S) | Reference node for gate drive and current return path; connected to PCB ground plane for thermal and EMI control |
| 3 | Drain (D) | High-side or low-side switched output; exposed drain pad in SC-75 improves thermal transfer to copper pour |
Key Features
| Feature | Design Value |
|---|---|
| µTrenchMOS™ technology | Enables 920 mΩ RDS(on) in SC-75 - achieves performance previously requiring larger SOT23 or SOT323 packages |
| Fast switching (tf = 2.2 ns) | Reduces transition losses in PWM frequencies up to 10 MHz, critical for compact DC-DC converter control FETs |
| Low gate charge (Qg(tot) = 1.05 nC) | Allows direct drive from 3.3 V MCU GPIOs without external buffer, simplifying BOM and layout |
| Body diode VSD = 0.83 V | Minimizes conduction loss during freewheeling in low-duty-cycle loads like motor drivers or LED dimmers |
| −55 °C to +150 °C operating range | Supports deployment in automotive cabin modules, industrial sensors, and outdoor IoT nodes without derating |
Applications
| Portable Power Switching | USB Load Switching |
|---|---|
|
Use Scenario: Low-power enable/disable of auxiliary rails (e.g., Bluetooth module, display backlight) in smartphones and wearables. IC Role / Device Role / Timing Role: Low-side load switch controlled by baseband processor GPIO. Use Value: 0.55 A rating and 920 mΩ RDS(on) limit dropout to <520 mV at 500 mA, preserving battery runtime. |
Use Scenario: Overcurrent-protected USB peripheral power delivery in docking stations and hubs. IC Role / Device Role / Timing Role: Self-protected high-side switch with integrated body diode for reverse polarity tolerance. Use Value: VSD = 0.83 V and ISM = 0.88 A support safe hot-plug events without external diode or fuse. |
| LED Driver Control | IoT Sensor Biasing |
|
Use Scenario: PWM dimming control of white LEDs in smart lighting modules and indicator panels. IC Role / Device Role / Timing Role: Low-side current sink switching at 1–10 kHz with minimal dead-time distortion. Use Value: 4 ns rise time and 2.2 ns fall time preserve PWM fidelity and reduce audible noise in LED drivers. |
Use Scenario: On-demand power gating of environmental sensors (e.g., humidity, gas) in battery-operated edge nodes. IC Role / Device Role / Timing Role: Ultra-low-quiescent enable switch isolating sensor supply between readings. Use Value: IDSS leakage ≤1 µA at 25 °C ensures <1 µA standby current, extending multi-year battery life. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2004LK-7 | RDS(on) = 500 mΩ @ VGS = 4.5 V; SOT-723 package (smaller than SC-75); higher gate charge (1.4 nC) | Better efficiency at 3.3 V drive but requires tighter layout due to 1.25 mm × 0.85 mm footprint | Select when lower RDS(on) at 4.5 V is prioritized over gate drive simplicity |
| AO3400 | RDS(on) = 44 mΩ @ VGS = 10 V; SOT-23 package; Ptot = 1.4 W; higher thermal resistance | Higher current capability (5.7 A) but 3× larger footprint and unsuitable for ultra-compact designs | Select when board area is less constrained and >1 A continuous current is required |
Compared with DMN2004LK-7 and AO3400, the PMR780SN offers optimal balance of SC-75 size, 1 V gate threshold compatibility, and sub-1 nC gate charge - making it preferred for space-limited, 3.3 V–driven portable systems where 0.55 A suffices.
Availability
PMR780SN is available at Aetrix Electronics and suitable for portable power switching, USB load management, LED driver control, and IoT sensor biasing requiring stable component supply across production lifecycles.
Supply support for PMR780SN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete, logic, and power MOSFET semiconductors, spun off from NXP's Standard Products division in 2017 and focused on automotive, industrial, computing, and consumer markets.
The PMR780SN belongs to Nexperia's µTrenchMOS™ standard-level FET product line, engineered specifically for space-constrained, battery-powered applications demanding low gate drive voltage, fast switching, and robust thermal performance in miniature packages.
FAQ
What is the maximum continuous drain current for PMR780SN at 100 °C solder point temperature?
The PMR780SN supports a maximum continuous drain current of 0.35 A at Tsp = 100 °C and VGS = 10 V, as specified in Table 3 of the datasheet. This derating reflects thermal limits of the SC-75 package; designers must ensure adequate PCB copper area and ambient airflow to sustain this current. The PMR780SN datasheet provides normalized current curves (Figure 2) to guide layout-dependent thermal design.
Does PMR780SN have a built-in body diode, and what is its forward voltage?
Yes, the PMR780SN integrates a source-drain body diode with a typical forward voltage VSD of 0.83 V at IS = 0.3 A and VGS = 0 V (Table 5). This diode enables freewheeling in inductive loads and reverse-polarity protection in USB applications. The PMR780SN body diode exhibits low reverse recovery charge, supporting efficient operation in PWM-driven circuits.
Can PMR780SN be driven directly by a 3.3 V microcontroller GPIO?
Yes, the PMR780SN has a gate threshold voltage VGS(th) of 1.0–3.0 V at 25 °C, ensuring reliable turn-on with 3.3 V logic. Its low gate charge (Qg(tot) = 1.05 nC) and input capacitance (Ciss = 23 pF) minimize drive strength requirements. The PMR780SN operates efficiently in this configuration without external level shifters or buffers, reducing system cost and complexity.
What is the thermal resistance from junction to solder point (Rth(j-sp)) for PMR780SN?
The PMR780SN has a maximum thermal resistance Rth(j-sp) of 235 K/W (Table 4), measured from junction to solder point under transient conditions. This value assumes standard reflow-soldered mounting on a 10 mm² copper pad. For sustained 0.55 A operation, designers should verify junction temperature using Figure 1 and derate power accordingly. The PMR780SN thermal model supports accurate thermal simulation in compact PCB environments.
Is PMR780SN RoHS compliant and halogen-free?
Yes, the PMR780SN meets RoHS Directive 2011/65/EU and is halogen-free per Nexperia's standard material declarations. The device carries the "Green" designation in Nexperia's product coding system and complies with JEDEC J-STD-020 moisture sensitivity level (MSL) 1. Full compliance documentation, including test reports and substance declarations, is available upon request for the PMR780SN.
PMR780SN,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- SC-75, SOT-416
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 550mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 920mOhm @ 300mA, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.05 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 23 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 530mW (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-75
PMR780SN,115 FAQ
1.How can I place an order for PMR780SN,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PMR780SN,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMR780SN,115 reliable?
The price and inventory of PMR780SN,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMR780SN,115 is usually 5 days.
3.What payment methods are accepted for PMR780SN,115?
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4.How is shipping managed for PMR780SN,115?
PMR780SN,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMR780SN,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMR780SN,115?
For technical support, including PMR780SN,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMR780SN,115 requirements.
6.How does Aetrix verify that PMR780SN,115 is sourced from the original manufacturer or authorized distributors?
All PMR780SN,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMR780SN,115 meets industry standards.
7.What is the process for return or replacement of PMR780SN,115?
All PMR780SN,115 units undergo pre-shipment inspection (PSI). If there is an issue with PMR780SN,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMR780SN,115 part is unused and in its original packaging.
Return procedure for PMR780SN,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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