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Nexperia USA Inc. PMT21EN,115
- Part No.:
- PMT21EN,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-261-4, TO-261AA
- Datasheet:
-
PMT21EN,115.pdf
- Description:
- MOSFET N-CH 30V 7.4A SOT223
- Quantity:
- Payment:
- Shipping:
Inventory:9,157
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Product details
Overview
PMT21EN,115 from NXP Semiconductors is a 30 V, 7.4 A N-channel enhancement-mode Trench MOSFET in SOT223 (SC-73) package, optimized for low-side switching with 18 mΩ RDS(on) at VGS = 10 V and Tj = 25 °C, logic-level gate drive compatibility (VGS(th) = 1.5 V typ), and fast switching (tr = 29 ns, tf = 77 ns). It serves in relay drivers, high-speed line drivers, and load-switching circuits where compact size and thermal efficiency are critical.
For engineers reviewing the PMT21EN,115 datasheet, PMT21EN,115 pinout, PMT21EN,115 application, or PMT21EN,115 equivalent, this device is selected for low-voltage, medium-current switching where RDS(on), gate charge (QG(tot) = 12.5 nC), thermal resistance (Rth(j-a) = 62 K/W with 6 cm² drain pad), and logic-level drive capability directly impact PCB layout, drive circuit design, and thermal management decisions.
Technical Context
This N-channel MOSFET uses Trench MOSFET technology to achieve low on-resistance and fast switching performance while maintaining robustness against avalanche energy and thermal stress. Its gate threshold voltage (1.5 V typ) ensures reliable turn-on with standard 3.3 V or 5 V logic outputs, eliminating need for gate drivers in many applications.
The dual-drain configuration (Pins 2 and 4 both connected to drain) enhances current handling and thermal dissipation in the SOT223 package. Its SOA is characterized up to 30 V and 30 A peak, with derating defined by junction temperature and pulse duration per IEC 60134 limiting values.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage before breakdown; defines safe operating range in 24 V systems with transient margin. |
| RDS(on) | 18 mΩ @ VGS = 10 V, ID = 7.4 A, Tj = 25 °C - Directly determines conduction loss (Pcond ≈ I² × 0.018 Ω) and thermal rise under continuous load. |
| VGS(th) | 1.5 V typ - Enables direct drive from 3.3 V microcontrollers without level-shifting; ensures predictable turn-on at low gate voltages. |
| QG(tot) | 12.5 nC @ VDS = 15 V, ID = 6 A - Determines gate driver power requirement and switching speed; lower QG enables higher-frequency PWM operation. |
| tr/tf | 29 ns / 77 ns - Fast edge rates reduce switching losses and EMI generation in high-frequency switching circuits. |
| Rth(j-a) | 62 K/W @ FR4 PCB, 6 cm² drain pad - Quantifies thermal bottleneck; enables estimation of junction temperature rise (ΔTj = Pdiss × 62) for reliability validation. |
| ID | 7.4 A @ Tamb = 25 °C - Continuous DC current rating under specified board conditions; derates to 4.7 A at 100 °C ambient. |
Pinout & Package
SOT223 (SC-73) plastic surface-mounted package with increased heatsink area; 4 leads, standardized footprint per JEDEC MO-178AA. Drain terminals (Pins 2 and 4) share internal connection to maximize thermal conduction through large copper pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | G (Gate) | Control input; requires <100 nA leakage current and 1.5 V threshold to initiate conduction; sensitive to ESD. |
| 2 | D (Drain) | Main high-side current path; electrically tied to Pin 4; must be soldered to ≥6 cm² copper pour for rated power dissipation. |
| 3 | S (Source) | Reference node for gate drive and current return; connects to ground or load return path; defines VGS reference. |
| 4 | D (Drain) | Second drain terminal; redundant connection to same internal drain node as Pin 2; improves thermal and current distribution. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced with VGS ≥ 4.5 V, enabling direct interface with 3.3 V/5 V MCUs without external level shifters. |
| Trench MOSFET architecture | Delivers 18 mΩ RDS(on) in SOT223 - 30–40% lower than planar equivalents at same voltage/current class, reducing conduction loss. |
| Fast switching performance | 29 ns rise / 77 ns fall times minimize transition losses in PWM frequencies up to 500 kHz. |
| Dual-drain thermal design | Pins 2 and 4 both connect to drain, allowing symmetric PCB layout and doubling effective thermal pad area for improved heat spreading. |
| Low gate charge | 12.5 nC total gate charge reduces driver IC power consumption and enables use of smaller, lower-cost gate drivers. |
Applications
| Relay Driver | High-Speed Line Driver |
|---|---|
Use Scenario: Driving electromagnetic relays in industrial PLC I/O modules requiring fast coil energization/de-energization cycles. IC Role / Device Role / Timing Role: Low-side switch controlling relay coil current path; handles repetitive 10–100 Hz switching with minimal self-heating. Use Value: 18 mΩ RDS(on) limits coil drive loss to <150 mW at 7.4 A, while 29 ns tr ensures relay contact bounce is minimized during rapid cycling. |
Use Scenario: Transmitting digital control signals across long PCB traces or cables in motor control subsystems. IC Role / Device Role / Timing Role: Active pull-down element in open-drain bus interface; provides sharp signal edges and strong sink capability. Use Value: 7.4 A continuous current and 77 ns tf enable clean, sub-100 ns edge transitions into 50 Ω loads, suppressing reflections and timing jitter. |
| Low-Side Load Switch | Switching Power Supply Sync Rectifier |
Use Scenario: Enabling/disabling power to peripheral modules (e.g., sensors, displays) in battery-powered IoT nodes. IC Role / Device Role / Timing Role: High-efficiency series switch between ground and load; controlled by MCU GPIO with minimal quiescent current. Use Value: 100 nA gate leakage and 1.5 V VGS(th) ensure stable off-state and reliable on-state even at 3.3 V supply, extending battery life. |
Use Scenario: Replacing Schottky diodes in 12 V output stage of synchronous buck converters for telecom power supplies. IC Role / Device Role / Timing Role: Synchronous rectifier operating at 300–500 kHz; body diode conducts during dead time, channel conducts during active phase. Use Value: 0.7 V forward voltage of integrated source-drain diode and 18 mΩ RDS(on) reduce conduction loss by >40% vs. 40 V Schottky, improving efficiency at 5–10 A loads. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel low-side switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3026LSD-13 | Higher RDS(on) (26 mΩ @ 10 V), same 30 V rating, but in SO-8 package with higher thermal resistance (Rth(j-a) ≈ 90 K/W). | Less suitable for space-constrained designs due to larger SO-8 footprint; requires more PCB area for thermal relief. | Choose when SO-8 is already standardized in design and thermal budget allows higher RDS(on). |
| IPD25N03S4-05 | Lower RDS(on) (4.5 mΩ), TO-252 package, higher ID (25 A), but requires 10 V gate drive (VGS(th) = 2.5 V min) - not logic-level compatible. | Needs dedicated gate driver for 3.3 V MCU interfaces; superior for high-current, high-efficiency applications where board space permits TO-252. | Choose only if gate drive voltage ≥ 4.5 V is available and thermal performance outweighs SOT223's compactness. |
Compared with DMN3026LSD-13, PMT21EN,115 offers 30% lower RDS(on) and better thermal performance in a smaller footprint; versus IPD25N03S4-05, it trades off absolute current capacity for logic-level drive simplicity and SMT manufacturability - making it optimal for cost-sensitive, space-limited 3.3 V/5 V control systems.
Availability
PMT21EN,115 is available at Aetrix Electronics and suitable for industrial automation I/O modules, battery-powered sensor nodes, motor control interface boards, and embedded power management circuits requiring stable component supply and long-term obsolescence support.
Supply support for PMT21EN,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT markets.
The PMT21EN belongs to NXP's TrenchMOS family - engineered for high-efficiency, low-voltage power switching in space-constrained applications where logic-level drive, fast switching, and thermal robustness are essential.
FAQ
What is the maximum continuous drain current for PMT21EN,115 at 100 °C ambient temperature?
The maximum continuous drain current is 4.7 A at Tamb = 100 °C with FR4 PCB, single-sided copper, tin-plated, and standard footprint (Table 5, Limiting Values). This derating reflects thermal limitations - junction temperature must remain ≤150 °C. At 25 °C ambient, the rating rises to 7.4 A under identical board conditions.
Can PMT21EN,115 be driven directly by a 3.3 V microcontroller GPIO?
Yes. With a typical gate threshold voltage of 1.5 V and guaranteed turn-on at VGS ≥ 2.5 V, the device achieves full enhancement at 3.3 V. Its RDS(on) is 21 mΩ at VGS = 4.5 V and 26 mΩ at VGS = 4.5 V/6.6 A (Table 7), confirming usable conduction with 3.3 V drive - though 18 mΩ at 10 V is not achievable.
What is the purpose of the dual drain pins (2 and 4) in the SOT223 package?
Pins 2 and 4 are internally connected to the same drain node. This dual-terminal design increases effective copper area for heat transfer and current distribution, lowering thermal resistance by ~15% compared to single-drain variants. It also improves mechanical reliability during thermal cycling and enables symmetrical PCB layout for balanced current flow.
Is PMT21EN,115 suitable for synchronous rectification in a 12 V buck converter?
Yes - its 30 V VDS rating provides sufficient margin over 12 V rail transients, and its 18 mΩ RDS(on) yields lower conduction loss than typical 40 V Schottky diodes. The integrated source-drain diode (VSD = 0.7 V typ) supports dead-time conduction, and fast switching (tr/tf) minimizes overlap loss at 300–500 kHz switching frequencies.
PMT21EN,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- TO-261-4, TO-261AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 21mOhm @ 7.4A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14.4 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 588 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 820mW (Ta), 8.33W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-223
PMT21EN,115 FAQ
1.How can I place an order for PMT21EN,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PMT21EN,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMT21EN,115 reliable?
The price and inventory of PMT21EN,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMT21EN,115 is usually 5 days.
3.What payment methods are accepted for PMT21EN,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMT21EN,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMT21EN,115?
PMT21EN,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMT21EN,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMT21EN,115?
For technical support, including PMT21EN,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMT21EN,115 requirements.
6.How does Aetrix verify that PMT21EN,115 is sourced from the original manufacturer or authorized distributors?
All PMT21EN,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMT21EN,115 meets industry standards.
7.What is the process for return or replacement of PMT21EN,115?
All PMT21EN,115 units undergo pre-shipment inspection (PSI). If there is an issue with PMT21EN,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMT21EN,115 part is unused and in its original packaging.
Return procedure for PMT21EN,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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