NXP Semiconductors PMT21EN,135
- Part No.:
- PMT21EN,135
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-261-4, TO-261AA
- Datasheet:
-
PMT21EN,135.pdf
- Description:
- MOSFET N-CH 30V 7.4A SOT223
- Quantity:
- Payment:

- Shipping:

Inventory:3,180
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Product details
Overview
PMT21EN from Nexperia is a 30 V, 7.4 A N-channel enhancement-mode Trench MOSFET in SOT223 (SC-73) package, designed for low-side switching with logic-level gate drive compatibility, 18 mΩ RDS(on) at VGS = 10 V, and fast 4 ns turn-on delay - used in relay drivers and high-speed line drivers.
For engineers reviewing the PMT21EN datasheet, PMT21EN pinout, PMT21EN application, or PMT21EN equivalent, key selection considerations include its 30 V VDS, 7.4 A continuous drain current at 25 °C, 18–21 mΩ on-resistance, 12.5 nC total gate charge, and dual-drain SOT223 thermal performance with 62 K/W Rth(j-a) on 6 cm² copper pad.
Technical Context
This N-channel MOSFET uses Trench MOSFET technology to achieve low RDS(on) and fast switching, with gate threshold voltage of 1.5 V (typ) enabling direct interfacing with 3.3 V and 5 V logic controllers. Its dual-drain configuration (pins 2 and 4) enhances thermal dissipation in surface-mount layouts.
Static characteristics are specified across temperature: RDS(on) rises to 27–32 mΩ at Tj = 150 °C, while dynamic parameters include 588 pF input capacitance and 62 pF reverse transfer capacitance - supporting stable operation in high-frequency switching circuits up to several MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V maximum drain-source voltage - defines safe blocking capability in 24 V industrial bus and relay coil applications. |
| ID (continuous) | 7.4 A at Tamb = 25 °C - supports robust load switching without forced cooling on standard FR4 PCBs. |
| RDS(on) | 18–21 mΩ at VGS = 10 V, Tj = 25 °C - enables <150 mW conduction loss at 7 A, minimizing thermal stress. |
| QG(tot) | 12.5–14.4 nC - determines gate driver strength requirement; compatible with standard logic buffers and microcontroller GPIOs. |
| td(on) | 4 ns typical - ensures precise timing control in high-speed digital line drivers and PWM circuits. |
| VGS(th) | 1.5 V typical - guarantees reliable turn-on with 3.3 V logic, eliminating need for level-shifting circuitry. |
| Ciss | 588 pF - influences switching speed and EMI behavior; manageable with moderate gate resistance. |
Pinout & Package
SOT223 (SC-73) plastic surface-mounted package with increased heatsink area; 4 leads, dual-drain configuration for enhanced thermal performance on PCBs with 6 cm² copper pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | G (gate) | Control terminal; accepts logic-level voltage (≥2.5 V) to fully enhance channel; low 100 nA leakage ensures stable off-state. |
| 2 | D (drain) | Main power output node; electrically tied to pin 4; connects to load or supply rail; requires thermal pad connection for rated power handling. |
| 3 | S (source) | Reference node for gate drive and current return path; ties to system ground in low-side switch configurations. |
| 4 | D (drain) | Second drain terminal; parallel-connected to pin 2 to reduce package inductance and improve thermal spreading to PCB copper. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Turns on fully at VGS = 4.5 V (RDS(on) = 21–26 mΩ), enabling direct interface with 3.3 V/5 V microcontrollers without external drivers. |
| Trench MOSFET architecture | Delivers 18 mΩ RDS(on) at 10 V and 7.4 A, reducing conduction losses by >30% vs. planar MOSFETs in same package. |
| Dual-drain SOT223 construction | Provides two independent drain terminals (pins 2 and 4) to lower thermal resistance and improve current sharing in high-current PCB traces. |
| Fast switching performance | 4 ns turn-on delay + 29 ns rise time enables clean edge transitions in 1–5 MHz PWM and digital line driving applications. |
| Robust SOA | Safe operating area supports 30 A peak drain current (10 µs pulse) and 150 °C junction temperature - suitable for transient-heavy loads. |
Applications
| Relay Driver | High-Speed Line Driver |
|---|---|
|
Use Scenario: Driving electromagnetic relays in industrial PLC I/O modules where fast coil de-energization reduces contact bounce and improves cycle life. IC Role / Device Role / Timing Role: Low-side switch controlling relay coil current; handles 24 V DC coils with up to 100 mA steady-state and 500 mA inrush. Use Value: 4 ns td(on) and 77 ns fall time ensure precise timing control; 18 mΩ RDS(on) limits self-heating during sustained activation. |
Use Scenario: Transmitting TTL/CMOS-level digital signals across 50 Ω transmission lines in test equipment and data acquisition systems. IC Role / Device Role / Timing Role: Active pull-down stage in push-pull or open-drain line driver topology; switches at >1 MHz with minimal overshoot. Use Value: Low Ciss (588 pF) and fast tr/tf (29/77 ns) maintain signal integrity; logic-level VGS(th) simplifies interface with FPGA I/O banks. |
| Low-Side Load Switch | Switching Power Supply Sync Rectifier |
|
Use Scenario: Enabling/disabling 12–24 V subsystems (e.g., sensors, displays) in embedded control units with controlled inrush current. IC Role / Device Role / Timing Role: High-side or low-side power switch controlled by MCU GPIO; provides overcurrent protection via external sensing. Use Value: 7.4 A continuous rating supports typical 5–10 W loads; 150 °C Tj rating allows operation in sealed enclosures without active cooling. |
Use Scenario: Replacing Schottky diodes in 12 V output buck converters to reduce conduction losses and improve efficiency above 2 A load. IC Role / Device Role / Timing Role: Synchronous rectifier driven by controller's complementary gate signal; operates in hard-switched or resonant topologies. Use Value: 30 V VDS margin accommodates voltage spikes in 12 V systems; 12.5 nC QG enables efficient gate drive at 300–500 kHz switching frequencies. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3026LSD-13 | 30 V, 6.5 A, 26 mΩ RDS(on) at 4.5 V, SO-8 package - higher on-resistance, larger footprint, no dual-drain thermal advantage. | Better suited for board space-constrained designs requiring dual-source/drain routing; less optimal for thermal-limited SOT223 layouts. | Select when SO-8 mounting is preferred and gate drive voltage ≥4.5 V is guaranteed; avoid if PCB copper area is limited. |
| IPD220N03L3-1R2 | 30 V, 100 A, 1.2 mΩ RDS(on), TO-252 package - vastly higher current, lower RDS(on), but requires significant layout redesign and gate driver upgrade. | Targeted at high-power motor drives and battery management; over-specified for relay/line driver use cases. | Choose only for new high-current designs where thermal headroom and cost justify TO-252 rework; not a drop-in replacement. |
Compared with DMN3026LSD-13 and IPD220N03L3-1R2, the PMT21EN delivers optimal balance of logic-level drivability, SOT223 thermal efficiency, and compact size for medium-current switching - making it ideal for space- and thermally constrained industrial control nodes where gate drive simplicity and reliability are critical.
Availability
PMT21EN is available at Aetrix Electronics and suitable for relay drivers, high-speed line drivers, low-side load switches, and switching circuits requiring stable component supply and long-term industrial availability.
Supply support for PMT21EN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products business, with focus on automotive, industrial, computing, and consumer markets.
The PMT21EN belongs to Nexperia's TrenchMOS portfolio, engineered specifically for high-efficiency, logic-compatible switching in space-constrained industrial and embedded applications - emphasizing thermal robustness and ease of integration.
FAQ
What is the maximum continuous drain current for PMT21EN at 100 °C ambient temperature?
The PMT21EN supports 4.7 A continuous drain current at Tamb = 100 °C under standard FR4 PCB conditions (single-sided copper, tin-plated). This derating reflects thermal limitations of the SOT223 package and ensures reliable operation without exceeding 150 °C junction temperature. The PMT21EN datasheet specifies this value in Table 5 under limiting values.
Does PMT21EN require a gate resistor for safe operation?
A gate resistor is recommended for PMT21EN to control switching speed and suppress ringing, especially in high-di/dt applications. While not strictly required for basic turn-on, a 6 Ω external resistor is used in the datasheet's timing measurements (e.g., td(on), tr) and helps manage EMI and gate driver stress. The PMT21EN's 12.5 nC QG makes it compatible with standard microcontroller GPIOs when paired with appropriate series resistance.
Can PMT21EN be used in automotive applications?
The PMT21EN is not automotive-qualified per its datasheet and lacks AEC-Q101 certification. It is intended for industrial, computing, and consumer applications. For automotive use, Nexperia offers qualified alternatives like the PMV21EN (AEC-Q101 compliant, same SOT223 footprint). The PMT21EN should not be deployed in safety-critical or temperature-cycled automotive environments without full qualification testing.
What is the thermal resistance from junction to ambient for PMT21EN on a standard PCB?
On a standard FR4 PCB with single-sided copper and tin-plated footprint (no extended heatsink pad), the PMT21EN has Rth(j-a) = 132–152 K/W (Table 6). With a 6 cm² drain pad, this improves to 62–71 K/W - a 2.2× thermal improvement critical for sustaining 7.4 A continuous current. These values directly impact the PMT21EN's power dissipation limit and must be applied in thermal design calculations.
How does the dual-drain configuration of PMT21EN improve performance?
The dual-drain (pins 2 and 4) configuration in the PMT21EN reduces package inductance and spreads heat across two solder joints, lowering effective thermal resistance and improving current handling in high-pulse applications. This design allows more uniform current distribution and better thermal coupling to the PCB copper, directly enhancing reliability in repetitive switching and surge conditions. The PMT21EN's pinout diagram (Table 2) confirms both pins are internally connected to the drain.
PMT21EN,135 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- TO-261-4, TO-261AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 21mOhm @ 7.4A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14.4 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 588 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 820mW (Ta), 8.33W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-73
PMT21EN,135 FAQ
1.How can I place an order for PMT21EN,135 through Aetrix?
Please submit a Request for Quotation (RFQ) for PMT21EN,135 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMT21EN,135 reliable?
The price and inventory of PMT21EN,135 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMT21EN,135 is usually 5 days.
3.What payment methods are accepted for PMT21EN,135?
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PMT21EN,135 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMT21EN,135 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMT21EN,135?
For technical support, including PMT21EN,135 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMT21EN,135 requirements.
6.How does Aetrix verify that PMT21EN,135 is sourced from the original manufacturer or authorized distributors?
All PMT21EN,135 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMT21EN,135 meets industry standards.
7.What is the process for return or replacement of PMT21EN,135?
All PMT21EN,135 units undergo pre-shipment inspection (PSI). If there is an issue with PMT21EN,135, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMT21EN,135 part is unused and in its original packaging.
Return procedure for PMT21EN,135:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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