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NXP Semiconductors PMT29EN,115

Name: PMT29EN,115
Brand: NXP Semiconductors
SKU: PMT29EN,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PMT29EN,115

Manufacturer:: NXP Semiconductors

Category:: FETs, MOSFETs

Package:: TO-261-4, TO-261AA

Datasheet:: PMT29EN,115.pdf

Description:: MOSFET N-CH 30V 6A SOT223

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Product details

Overview

PMT29EN from Nexperia is a 30 V, 6 A N-channel enhancement-mode Trench MOSFET in SOT223 (SC-73) package, designed for low-side switching with logic-level gate drive compatibility, 24 mΩ typical R_DS(on) at V_GS = 10 V, and fast 5 ns turn-on delay - deployed in relay drivers and high-speed line drivers.

For engineers reviewing the PMT29EN datasheet, PMT29EN pinout, PMT29EN application, or PMT29EN equivalent, key selection criteria include its 30 V V_DS, 6 A continuous drain current at 25 °C, 24–29 mΩ R_DS(on) range, logic-level gate threshold (1.5 V typ), and thermal resistance of 62 K/W (junction-to-ambient, with 6 cm² drain pad).

Technical Context

This N-channel MOSFET uses Trench MOSFET technology to achieve low on-resistance and fast switching. Its gate-source threshold voltage (V_GS(th)) ranges from 1.0 V to 2.5 V, enabling reliable turn-on with 3.3 V or 5 V logic controllers. The device features a dual-drain configuration (pins 2 and 4) for enhanced thermal conduction via the large copper drain pad.

Static characteristics are specified at T_j = 25 °C and extended to 150 °C, with R_DS(on) rising to 37–45 mΩ at elevated junction temperature. Dynamic parameters include 9.6 nC total gate charge and 492 pF input capacitance, supporting efficient high-frequency switching in load-switching applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage; suitable for 24 V rail and automotive 12 V systems with margin.
I_D (continuous)	6 A at T_amb = 25 °C - Continuous drain current rating under standard FR4 PCB mounting (6 cm² drain pad).
R_DS(on)	24 mΩ typ @ V_GS = 10 V, I_D = 6 A, T_j = 25 °C - Low conduction loss enabling <150 mW dissipation at 5 A.
V_GS(th)	1.5 V typ @ I_D = 250 µA - Logic-level compatible; fully enhanced with 3.3 V or 5 V microcontroller GPIO.
Q_G(tot)	9.6 nC typ @ V_DS = 15 V, V_GS = 10 V - Enables fast switching with low gate-drive power in PWM circuits.
R_th(j-a)	62 K/W typ @ 6 cm² drain pad - Thermal performance supports >1.7 W continuous dissipation at T_amb = 25 °C.
t_d(on)	5 ns typ - Short turn-on delay enables operation up to several MHz in digital switching applications.

Pinout & Package

SOT223 (SC-73) plastic surface-mounted package with 4 leads and integrated heatsink; pins 2 and 4 are internally connected to the drain terminal and share the large copper mounting pad for thermal management.

Pin/Terminal	Circuit Role	Design Meaning
1	G (Gate)	Control terminal; accepts logic-level input (1.5 V threshold); requires no external level-shifting for 3.3 V/5 V MCU drive.
2	D (Drain)	Main high-side current path; electrically tied to pin 4; connects to PCB copper pour for thermal dissipation.
3	S (Source)	Reference node for gate drive and current return; ties to ground or low-side shunt in load-switch configurations.
4	D (Drain)	Second drain connection; identical to pin 2; used for mechanical stability and improved thermal conduction to PCB.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced with 3.3 V or 5 V control signals - eliminates need for gate driver ICs in microcontroller-based designs.
Trench MOSFET architecture	Delivers 24 mΩ R_DS(on) at 10 V drive while maintaining ruggedness and low gate charge (9.6 nC).
Dual-drain thermal design	Pins 2 and 4 both connect to drain and solder directly to PCB copper - reduces thermal resistance by ~50% vs. single-drain SOT223 variants.
Fast switching performance	5 ns turn-on delay + 28 ns rise time enables clean edge transitions in 1–5 MHz PWM and digital load-switching.
Robust SOA	Safe operating area supports 24 A peak drain current (10 µs pulse) and stable DC operation up to 6 A with proper heatsinking.

Applications

Relay Driver	High-Speed Line Driver
Use Scenario: Driving electromagnetic relays in industrial PLC output modules requiring low-voltage MCU control and high-current coil actuation. IC Role / Device Role / Timing Role: Low-side switch that sinks relay coil current (typically 50–200 mA) with minimal voltage drop and fast de-energization. Use Value: 24 mΩ R_DS(on) ensures <12 mV drop at 500 mA, preserving coil voltage margin; 40 ns fall time prevents contact arcing during turn-off.	Use Scenario: Transmitting TTL/CMOS-level digital signals across long PCB traces or cables in test equipment and data acquisition systems. IC Role / Device Role / Timing Role: Active pull-down stage in push-pull or open-drain line driver topology, providing fast edge rates and low output impedance. Use Value: 5 ns t_d(on) and 28 ns t_r enable clean 20+ MHz square-wave transmission; low C_iss (492 pF) minimizes capacitive loading on source.
Low-Side Load Switch	Switching Power Supply Sync Rectifier
Use Scenario: Enabling/disabling power to peripheral subsystems (e.g., sensors, displays) in battery-powered IoT nodes to minimize standby current. IC Role / Device Role / Timing Role: Controlled series switch between V_IN and load ground, activated by MCU GPIO with precise timing and low quiescent current. Use Value: 1 µA max I_DSS at 25 °C and 10 µA at 150 °C ensure <1 µA system leakage when off; logic-level gate allows direct MCU interface without bias network.	Use Scenario: Replacing Schottky diodes in 12 V input buck converters for improved efficiency in industrial power supplies. IC Role / Device Role / Timing Role: Synchronous rectifier controlled by gate driver IC or controller's complementary output, conducting during low-side phase. Use Value: 24 mΩ R_DS(on) cuts conduction loss vs. 0.4 V Schottky drop - delivers >2 % efficiency gain at 5 A; 115 pF C_oss supports hard-switching up to 500 kHz.

Relay Driver

High-Speed Line Driver

Use Scenario: Driving electromagnetic relays in industrial PLC output modules requiring low-voltage MCU control and high-current coil actuation.

IC Role / Device Role / Timing Role: Low-side switch that sinks relay coil current (typically 50–200 mA) with minimal voltage drop and fast de-energization.

Use Value: 24 mΩ R_DS(on) ensures <12 mV drop at 500 mA, preserving coil voltage margin; 40 ns fall time prevents contact arcing during turn-off.

Use Scenario: Transmitting TTL/CMOS-level digital signals across long PCB traces or cables in test equipment and data acquisition systems.

IC Role / Device Role / Timing Role: Active pull-down stage in push-pull or open-drain line driver topology, providing fast edge rates and low output impedance.

Use Value: 5 ns t_d(on) and 28 ns t_r enable clean 20+ MHz square-wave transmission; low C_iss (492 pF) minimizes capacitive loading on source.

Low-Side Load Switch

Switching Power Supply Sync Rectifier

Use Scenario: Enabling/disabling power to peripheral subsystems (e.g., sensors, displays) in battery-powered IoT nodes to minimize standby current.

IC Role / Device Role / Timing Role: Controlled series switch between V_IN and load ground, activated by MCU GPIO with precise timing and low quiescent current.

Use Value: 1 µA max I_DSS at 25 °C and 10 µA at 150 °C ensure <1 µA system leakage when off; logic-level gate allows direct MCU interface without bias network.

Use Scenario: Replacing Schottky diodes in 12 V input buck converters for improved efficiency in industrial power supplies.

IC Role / Device Role / Timing Role: Synchronous rectifier controlled by gate driver IC or controller's complementary output, conducting during low-side phase.

Use Value: 24 mΩ R_DS(on) cuts conduction loss vs. 0.4 V Schottky drop - delivers >2 % efficiency gain at 5 A; 115 pF C_oss supports hard-switching up to 500 kHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-side switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3020LSD-13	30 V, 5.8 A, 22 mΩ R_DS(on) @ 10 V, SO-8 package (dual N-channel), higher gate charge (14 nC).	Requires PCB layout change (SO-8 vs. SOT223); better for space-constrained dual-switch designs but lacks single-device thermal pad advantage.	Select DMN3020LSD-13 only if dual-channel integration or higher current density per mm² is required; not drop-in for PMT29EN footprint.
IPD220N03L	30 V, 12 A, 22 mΩ R_DS(on) @ 10 V, TO-252 (DPAK), 10.5 nC Q_G, higher P_tot rating (68 W).	Superior thermal performance and current capability, but larger footprint and higher cost; suited for >8 A continuous loads.	Choose IPD220N03L when ambient temperature exceeds 70 °C or continuous current exceeds 6 A; requires DPAK-compatible layout.

Compared with DMN3020LSD-13 and IPD220N03L, the PMT29EN offers optimal balance of logic-level drive, compact SOT223 thermal design, and proven reliability in relay and line-driver roles - making it preferred for cost-sensitive, medium-current, space-constrained applications where single-N-channel functionality suffices.

Availability

PMT29EN is available at Aetrix Electronics and suitable for relay drivers, high-speed line drivers, low-side load switches, and switching circuits requiring stable component supply and long-term industrial availability.

Supply support for PMT29EN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products division, with focus on automotive, industrial, computing, and consumer markets.

The PMT29EN belongs to Nexperia's TrenchMOS portfolio, engineered specifically for robust, logic-compatible, medium-power switching in space-constrained industrial and embedded systems.

FAQ

What is the maximum continuous drain current rating for PMT29EN under standard PCB conditions?

The PMT29EN supports 6 A continuous drain current (I_D) when mounted on an FR4 PCB with single-sided copper, tin-plated, and a 6 cm² mounting pad for the drain. At 100 °C ambient, this derates to 3.9 A. These values are defined in the Limiting Values table and validated per IEC 60134 standards.

Does PMT29EN require a gate resistor for reliable switching in 5 V MCU-driven applications?

No external gate resistor is required for basic on/off control with 5 V MCUs due to the PMT29EN's logic-level compatibility (V_GS(th) = 1.5 V typ) and low gate charge (9.6 nC). However, a small series resistor (e.g., 10–47 Ω) is recommended to damp ringing and control dV/dt in high-frequency PWM use cases involving the PMT29EN.

Can PMT29EN be used in automotive applications?

The PMT29EN is not automotive-qualified per its datasheet and lacks AEC-Q101 certification. While its 150 °C junction temperature rating and robust SOA support harsh environments, Nexperia explicitly states non-automotive qualification unless otherwise specified - so PMT29EN should not be used in safety-critical or production automotive systems without additional validation.

What is the thermal resistance from junction to solder point (R_th(j-sp)) for PMT29EN?

The PMT29EN has a typical R_th(j-sp) of 8 K/W and a maximum of 15 K/W, measured from junction to the solder point on the drain pad. This parameter enables accurate thermal modeling when the device is soldered to a thermally optimized PCB with adequate copper area, and is critical for predicting junction temperature rise in the PMT29EN under load.

How does the dual-drain configuration (pins 2 and 4) affect PCB layout for PMT29EN?

Pins 2 and 4 of the PMT29EN are internally shorted to the drain and must both be connected to the same large copper pour for optimal thermal performance. The PCB footprint must provide two separate solder lands (as shown in Figure 19 of the datasheet), each ≥3.3 mm × 6.3 mm, joined by a wide copper bridge - failure to interconnect them reduces thermal conductivity and risks exceeding R_th(j-a) limits in the PMT29EN.

PMT29EN,115 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 6A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 29mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 11 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 492 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 820mW (Ta), 8.33W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-73

PMT29EN,115 FAQ

1.How can I place an order for PMT29EN,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PMT29EN,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMT29EN,115 reliable?

The price and inventory of PMT29EN,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMT29EN,115 is usually 5 days.

3.What payment methods are accepted for PMT29EN,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMT29EN,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMT29EN,115?

PMT29EN,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMT29EN,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMT29EN,115?

For technical support, including PMT29EN,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMT29EN,115 requirements.

6.How does Aetrix verify that PMT29EN,115 is sourced from the original manufacturer or authorized distributors?

All PMT29EN,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMT29EN,115 meets industry standards.

7.What is the process for return or replacement of PMT29EN,115?

All PMT29EN,115 units undergo pre-shipment inspection (PSI). If there is an issue with PMT29EN,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMT29EN,115 part is unused and in its original packaging.

Return procedure for PMT29EN,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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