NXP Semiconductors PMT29EN,135

Overview

PMT29EN from Nexperia is a 30 V, 6 A N-channel enhancement-mode Trench MOSFET in SOT223 (SC-73) package, designed for low-side switching in power management circuits. It features logic-level gate drive compatibility (V_GS(th) = 1.5 V typ), low R_DS(on) of 24 mΩ at V_GS = 10 V, and fast switching with t_d(on) = 5 ns and t_f = 40 ns - enabling efficient relay driving and high-speed line switching in industrial control modules.

For engineers reviewing the PMT29EN datasheet, PMT29EN pinout, PMT29EN application, or PMT29EN equivalent, key selection criteria include its 30 V drain-source rating, 6 A continuous current capability at T_amb = 25 °C, thermal resistance R_th(j-a) = 62 K/W on FR4 with 6 cm² drain pad, and verified suitability for low-side loadswitching in automotive body electronics and embedded power supplies.

Technical Context

This N-channel MOSFET employs Trench MOSFET technology to achieve low conduction loss and high switching efficiency. Its gate threshold voltage (V_GS(th) = 1.5 V typ) ensures reliable turn-on with standard 3.3 V or 5 V logic controllers, while its dynamic characteristics - including Q_G(tot) = 9.6 nC and C_iss = 492 pF - support stable operation in PWM-driven loads up to several hundred kHz.

The device integrates an intrinsic source-drain diode with V_SD = 0.8 V typ at I_S = 1.9 A, enabling freewheeling in inductive switching applications. Its safe operating area (SOA) supports peak drain currents up to 24 A for 10 µs pulses, and junction temperature is rated from −55 °C to 150 °C for robust operation in industrial ambient conditions.

Key Specifications

Pinout & Package

SOT223 (SC-73) plastic surface-mounted package with 4 leads and enhanced heatsink capability; drain terminals (pins 2 and 4) are internally connected and electrically tied to the large exposed copper pad for thermal dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-side switching applications.

Compared with DMN3020LSD-13 and IPD220N03L, PMT29EN offers optimal balance of logic-level drive, compact SOT223 form factor, and proven thermal performance on standard FR4 - making it ideal for space-constrained, medium-current switching where gate drive simplicity and PCB real estate are prioritized.

Availability

PMT29EN is available at Aetrix Electronics and suitable for relay drivers, high-speed line drivers, low-side loadswitches, and switching circuits requiring stable component supply across industrial automation, automotive body electronics, and embedded power management programs.

Supply support for PMT29EN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products division. It focuses on high-volume, high-reliability components for automotive, industrial, computing, and consumer markets.

PMT29EN belongs to Nexperia's TrenchMOS portfolio, engineered specifically for efficient, logic-compatible low-side switching in cost-sensitive and thermally constrained applications - emphasizing manufacturability, consistency, and long-term supply stability.

FAQ

What is the maximum continuous drain current for PMT29EN at 100 °C ambient temperature?

The PMT29EN supports a continuous drain current of 3.9 A at T_amb = 100 °C, as specified in the Limiting Values table under ID conditions. This derating reflects thermal constraints of the SOT223 package on standard FR4 PCBs; actual current capability may increase with enhanced copper pour or forced airflow. Always verify junction temperature using R_th(j-a) = 62 K/W (with 6 cm² drain pad) in thermal calculations for PMT29EN.

Is PMT29EN suitable for direct drive from a 3.3 V microcontroller GPIO?

Yes, PMT29EN is logic-level compatible with a typical gate threshold voltage (V_GS(th)) of 1.5 V and guaranteed turn-on at V_GS ≥ 2.5 V. At 3.3 V gate drive, it achieves R_DS(on) ≤ 36 mΩ (typical), supporting full 6 A current capability at room temperature. For robust operation across temperature and process variation, a 10 kΩ pull-up or gate resistor is recommended to ensure stable switching edges in PMT29EN applications.

What is the thermal resistance from junction to ambient for PMT29EN on a standard FR4 PCB?

For PMT29EN mounted on an FR4 PCB with single-sided copper, tin-plated, and standard footprint (no extended drain pad), R_th(j-a) is 131–151 K/W. With a 6 cm² mounting pad for the drain, R_th(j-a) improves to 62–71 K/W - a critical specification for thermal design. These values are measured per IEC 60134 and define the upper bound of allowable power dissipation before exceeding T_j(max) = 150 °C in PMT29EN implementations.

Does PMT29EN include an integrated body diode, and what is its forward voltage?

Yes, PMT29EN incorporates a monolithic source-drain body diode with a typical forward voltage (V_SD) of 0.8 V at I_S = 1.9 A and T_j = 25 °C. This diode enables freewheeling in inductive switching applications such as relay coils and motor drivers. Its reverse recovery characteristics are not characterized in the datasheet, so PMT29EN is best suited for non-critical recovery scenarios or where external snubbing is applied.

What are the absolute maximum ratings for gate-source voltage on PMT29EN?

The absolute maximum gate-source voltage (V_GS) for PMT29EN is ±20 V, as defined in both the Quick Reference Data and Limiting Values sections. Exceeding this rating - even momentarily - risks irreversible oxide damage to the gate structure. In practice, gate drive circuits should clamp V_GS to ≤15 V for safety margin, especially in noisy environments. This specification applies identically across all operating temperatures for PMT29EN.