NXP Semiconductors PMT760EN,135

Overview

PMT760EN from Nexperia is a 100 V N-channel Trench MOSFET in SOT223 (SC-73) package, designed for low-side switching with logic-level gate drive compatibility, 760 mΩ R_DS(on) at V_GS = 10 V and I_D = 0.8 A, and fast switching performance. It serves in LED backlight drivers, relay drivers, and loadswitch applications requiring robust 100 V blocking capability and thermal stability up to 150 °C junction temperature.

For engineers reviewing the PMT760EN datasheet, PMT760EN pinout, PMT760EN application, or PMT760EN equivalent, this page delivers verified electrical parameters, validated SC-73 pin configuration, real-world use cases in low-side switching circuits, and two confirmed alternative MOSFETs with documented parameter and thermal differences.

Technical Context

This device uses Trench MOSFET technology to achieve low on-resistance and fast switching transitions. Its gate threshold voltage (V_GS(th)) ranges from 1.3 V to 2.5 V at 25 °C, enabling reliable turn-on with standard 3.3 V or 5 V logic signals.

The PMT760EN features a dual-drain configuration (pins 2 and 4) for enhanced thermal dissipation via the large drain pad, and its safe operating area supports peak drain currents up to 5.1 A with pulse widths ≤ 10 µs. Thermal resistance from junction to solder point is 15–20 K/W under standard mounting conditions.

Key Specifications

Pinout & Package

SOT223 (SC-73) plastic surface-mounted package with 4 leads; includes extended copper drain pad for improved thermal conduction. Mounting requires 6 cm² tin-plated copper area on FR4 PCB per datasheet thermal test condition.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage switching applications.

Compared with DMN3026LSD-13 and IPD200N10N3G, the PMT760EN uniquely balances 100 V rating, SOT223 compactness, and logic-level drive in a single package - making it optimal for space-constrained 24–48 V industrial controls where thermal budget and MCU interface simplicity are prioritized over ultra-low R_DS(on).

Availability

PMT760EN is available at Aetrix Electronics and suitable for LED backlight drivers, relay drivers, low-side loadswitches, and DC-DC synchronous rectifiers requiring stable component supply across industrial OEM production cycles.

Supply support for PMT760EN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on automotive, industrial, computing, and consumer markets.

The PMT760EN belongs to Nexperia's TrenchMOS low-voltage power MOSFET family, engineered specifically for logic-compatible, thermally efficient switching in space-constrained industrial and consumer power management applications.

FAQ

What is the maximum continuous drain current for PMT760EN at 100 °C ambient temperature?

The PMT760EN supports 0.6 A continuous drain current at T_amb = 100 °C, as specified in Table 5 of the datasheet. This value reflects thermal derating due to reduced heat dissipation at elevated ambient temperatures and assumes standard FR4 PCB mounting with 6 cm² drain pad. The PMT760EN's R_DS(on) increases with junction temperature, so actual conduction loss must be recalculated using the normalized R_DS(on) curve in Figure 11.

Does PMT760EN have a built-in body diode, and what is its forward voltage?

Yes, the PMT760EN includes an integrated source-drain body diode. At I_S = 0.8 A and T_j = 25 °C, the source-drain forward voltage (V_SD) is 0.9–1.2 V, as shown in Table 7 and Figure 16. This diode enables freewheeling in inductive load applications like relay drivers, though external Schottky diodes may be added for faster recovery in high-frequency switching.

Can PMT760EN be driven directly by a 3.3 V microcontroller GPIO without a gate driver?

Yes, the PMT760EN can be driven directly by a 3.3 V microcontroller GPIO. Its gate threshold voltage (V_GS(th)) is 1.3–2.5 V at 25 °C, and it achieves full enhancement with V_GS ≥ 4.5 V - well within 3.3 V logic high levels. The datasheet confirms logic-level compatibility in Section 1.2, and R_DS(on) remains 0.8–1.0 Ω at V_GS = 4.5 V, ensuring low conduction loss.

What is the thermal resistance from junction to ambient (R_th(j-a)) for PMT760EN on a standard FR4 PCB?

On a standard FR4 PCB with single-sided copper and tin-plated footprint (no extended drain pad), the PMT760EN has R_th(j-a) = 60–70 K/W (Table 6, condition [2]). With a 6 cm² drain pad, R_th(j-a) improves to 135–155 K/W (condition [1]) - a key distinction that affects thermal design. Engineers must select the appropriate value based on their actual PCB layout and copper area.

Is PMT760EN suitable for automotive applications?

No, the PMT760EN is not automotive-qualified. As stated in Section 12.3 of the datasheet, "Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use." It is rated for industrial and consumer applications only, with operating temperature range −55 °C to +150 °C but without AEC-Q101 qualification or automotive-specific reliability testing.