NXP Semiconductors PMV100XPEA215

Overview

PMV100XPEA from Nexperia is a P-channel enhancement-mode Trench MOSFET in SOT23 (TO-236AB) package, rated for -20 V drain-source voltage, 97 mΩ typical R_DS(on) at V_GS = -4.5 V and I_D = -2.4 A, and qualified to AEC-Q101 for automotive use. It serves as a high-side load switch or relay driver in compact power management circuits.

For engineers reviewing the PMV100XPEA datasheet, PMV100XPEA pinout, PMV100XPEA application, or PMV100XPEA equivalent, this page delivers verified electrical parameters, thermal behavior under FR4 PCB mounting, gate charge characteristics, ESD robustness (>2 kV HBM), and validated automotive-grade reliability data - all specific to the exact PMV100XPEA variant.

Technical Context

This device operates as a normally-off P-channel switch with gate-source threshold voltage (V_GS(th)) ranging from -0.75 V to -1.25 V at 25 °C, enabling low-voltage logic-level drive. Its trench MOSFET architecture delivers fast switching (t_d(on) = 5 ns, t_f = 17 ns) and low dynamic losses via Q_G(tot) = 3.4–6 nC and C_iss = 386 pF.

Thermal performance is defined for two mounting conditions: R_th(j-a) = 226–270 K/W (FR4, standard footprint) and R_th(j-sp) = 20–28 K/W (drain pad 6 cm²), supporting stable operation up to 150 °C junction temperature. The integrated source-drain diode exhibits V_SD = -0.7 to -1.2 V at I_S = -1 A.

Key Specifications

Pinout & Package

PMV100XPEA uses the TO-236AB (SOT23) surface-mount plastic package: 3-pin, single-row, small outline with standardized 0.95 mm pitch and 2.8 mm × 1.2 mm body dimensions per IEC/JEDEC outlines.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Compared with DMN2020LFG-7 and SI2301BDS-T1-BE3, PMV100XPEA offers the lowest R_DS(on) (97 mΩ typ.) and fastest switching (5 ns t_d(on), 17 ns t_f) among these three SOT23 P-channel MOSFETs - making it optimal for thermally constrained, high-efficiency automotive and industrial load-switching designs.

Availability

PMV100XPEA is available at Aetrix Electronics and suitable for automotive body electronics, industrial sensor interfaces, and portable medical device power management requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant reliability.

Supply support for PMV100XPEA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance discrete, logic, and MOSFET solutions for automotive, industrial, and mobile markets.

The PMV100XPEA belongs to Nexperia's TrenchMOS P-channel portfolio, engineered specifically for space-constrained, high-reliability automotive load switching and logic-level driven power control applications.

FAQ

What is the maximum continuous drain current for PMV100XPEA at 100 °C ambient temperature?

The PMV100XPEA supports -1.5 A continuous drain current at T_amb = 100 °C when mounted on an FR4 PCB with single-sided copper and a 6 cm² drain pad. This derating reflects thermal limits under real-world board-level conditions, not just junction temperature alone. At 25 °C ambient, the rating increases to -2.4 A. Both values assume V_GS = -4.5 V and are specified in Table 5 of the official Nexperia datasheet dated 15 June 2017.

Is PMV100XPEA suitable for high-side switching with 3.3 V microcontroller GPIO drive?

Yes, PMV100XPEA is suitable for high-side switching with 3.3 V microcontroller GPIO drive because its gate-source threshold voltage (V_GS(th)) ranges from -0.75 V to -1.25 V, ensuring strong turn-on at V_GS = -3.3 V. At that gate voltage, R_DS(on) remains well below 200 mΩ, and the device delivers full -2.4 A capability at 25 °C. This eliminates need for external level shifters in most embedded control applications.

Does PMV100XPEA include integrated ESD protection, and what is its rating?

Yes, PMV100XPEA includes integrated ElectroStatic Discharge (ESD) protection rated at >2000 V per Human Body Model (HBM), as confirmed in Section 2 ("Features and benefits") and Table 5 of the Nexperia datasheet. This built-in protection applies across all pins and allows safe handling and board assembly without additional external TVS or RC networks in standard manufacturing environments.

What is the thermal resistance from junction to solder point (R_th(j-sp)) for PMV100XPEA?

The thermal resistance from junction to solder point (R_th(j-sp)) for PMV100XPEA is 20–28 K/W, measured with the device mounted on an FR4 PCB having single-sided copper, tin-plated finish, and a 6 cm² mounting pad for the drain terminal. This parameter is critical for estimating local temperature rise at the PCB copper interface during transient power pulses and is documented in Table 6 of the official datasheet.

How does the R_DS(on) of PMV100XPEA change with temperature?

The R_DS(on) of PMV100XPEA increases with junction temperature: at V_GS = -4.5 V and I_D = -2.4 A, it rises from 97–128 mΩ at T_j = 25 °C to 142–187 mΩ at T_j = 150 °C. This positive temperature coefficient is inherent to silicon MOSFETs and provides inherent current-sharing stability in parallel configurations. Data is confirmed in Table 7 and Figure 11 of the Nexperia PMV100XPEA datasheet.