NXP Semiconductors PMV117EN,215

Overview

PMV117EN,215 from Nexperia is a logic-level N-channel enhancement-mode TrenchMOS™ power MOSFET in SOT23 package, designed for low-voltage switching with V_DS = 30 V, R_DS(on) ≤ 117 mΩ at V_GS = 10 V, and I_D = 2.5 A (T_sp = 25 °C). It serves as a high-speed load switch in battery management and DC-DC converter circuits.

For engineers reviewing the PMV117EN,215 datasheet, PMV117EN,215 pinout, PMV117EN,215 application, or PMV117EN,215 equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.5–2.0 V), subminiature SOT23 footprint, and thermal performance under pulsed and continuous drain current conditions.

Technical Context

This device uses TrenchMOS™ technology to achieve low R_DS(on) and fast switching (t_d(on) = 4 ns, t_f = 13 ns) while maintaining robust gate oxide integrity (V_GS = ±20 V). Its threshold voltage is specified down to −55 °C and up to +150 °C, supporting operation across automotive and industrial temperature ranges.

The PMV117EN,215 integrates a source-drain diode with V_SD = 0.7–1.2 V (I_S = 0.83 A) and t_rr = 69 ns, enabling use in synchronous rectification and flyback topologies where body diode recovery matters. Thermal resistance R_th(j-sp) = 100 K/W ensures predictable junction-to-solder-point heat transfer in PCB-mounted applications.

Key Specifications

Pinout & Package

PMV117EN,215 is housed in a plastic surface-mounted SOT23 (TO-236AB) package measuring 2.9 × 1.3 × 1.0 mm, optimized for space-constrained PCB layouts and automated assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with DMN2004LK-7 and AO3400, the PMV117EN,215 offers balanced trade-offs: sufficient 30 V rating for 24 V systems, moderate R_DS(on), low Q_g, and proven thermal behavior in SOT23-making it optimal for space- and cost-sensitive battery-powered designs where gate drive capability is constrained.

Availability

PMV117EN,215 is available at Aetrix Electronics and suitable for battery management, USB power switching, and low-power DC-DC converter applications requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for PMV117EN,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products division, with focus on automotive, industrial, computing, and consumer markets.

The PMV117EN,215 belongs to Nexperia's µTrenchMOS™ logic-level FET product line, engineered for high-efficiency, space-constrained switching in portable and battery-operated systems where low gate drive voltage and fast response are essential.

FAQ

What is the maximum continuous drain current for PMV117EN,215 at 100 °C solder point temperature?

The PMV117EN,215 supports a continuous drain current of 1.6 A at T_sp = 100 °C and V_GS = 10 V, as specified in Table 3 of the datasheet. This derating reflects thermal limitations of the SOT23 package and must be applied in thermally constrained PCB layouts. The PMV117EN,215 remains fully functional within this limit without exceeding its 150 °C junction temperature rating.

Does PMV117EN,215 support 3.3 V logic-level gate drive?

Yes, the PMV117EN,215 features a logic-level gate threshold (V_GS(th) = 1.5–2.0 V at 25 °C) and guaranteed R_DS(on) ≤ 190 mΩ at V_GS = 4.5 V, making it fully compatible with 3.3 V microcontroller GPIOs. The PMV117EN,215 achieves usable conduction even at 3.3 V, though R_DS(on) increases versus 10 V drive-confirming suitability for low-voltage control interfaces.

What is the safe operating area (SOA) limitation for PMV117EN,215 in pulse mode?

The PMV117EN,215 has a peak drain current rating of 10 A for pulses ≤10 µs (Table 3), validated by its SOA curve (Figure 3). At V_DS = 10 V, it sustains 5 A for 100 µs and 2 A for 1 ms without exceeding thermal limits. The PMV117EN,215 SOA is defined by both current and voltage boundaries, not just power-critical for inductive load switching and transient suppression.

Is PMV117EN,215 RoHS compliant and halogen-free?

Yes, the PMV117EN,215 meets RoHS Directive 2011/65/EU and is halogen-free per Nexperia's material declarations. Its SOT23 package uses lead-free matte tin plating and green molding compound. Compliance documentation-including test reports and declaration of conformity-is available via Nexperia's official product page for PMV117EN,215.

Can PMV117EN,215 be used in high-frequency PWM applications above 500 kHz?

Yes, the PMV117EN,215 supports high-frequency PWM operation due to its fast switching parameters: t_d(on) = 4 ns, t_r = 7.5 ns, t_d(off) = 18 ns, and t_f = 13 ns. With total gate charge Q_g = 4.6 nC, it can be efficiently driven by low-output-impedance sources up to 1 MHz. The PMV117EN,215 maintains stable R_DS(on) and low dynamic losses in such applications when layout minimizes parasitic inductance.