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Nexperia USA Inc. PMV160UPVL

Part No.:
PMV160UPVL
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixPMV160UPVL.pdf
Description:
MOSFET P-CH 20V 1.2A TO236AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,318

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Product details

Overview

PMV160UPVL from Nexperia is a P-channel enhancement-mode Trench MOSFET in SOT23 (TO-236AB) package, rated for −20 V drain-source voltage, −1.2 A continuous drain current at 25 °C, and 170–210 mΩ RDS(on) at VGS = −4.5 V, used as a high-side load switch in low-voltage power management circuits.

For engineers reviewing the PMV160UPVL datasheet, PMV160UPVL pinout, PMV160UPVL application, or PMV160UPVL equivalent, this device supports fast-switching relay drivers, high-speed line drivers, and compact high-side switching where low gate threshold (−0.45 to −0.95 V) and sub-200 mΩ on-resistance at 1.8 V drive are critical selection criteria.

Technical Context

This P-channel MOSFET uses Trench MOSFET technology to achieve low RDS(on) and fast switching with typical total gate charge of 3.3–4 nC and rise/fall times of 26 ns/17 ns. Its gate-source threshold voltage range (−0.45 to −0.95 V) enables reliable turn-on from 1.8 V logic-level sources.

The device features a source-drain diode with −0.7 to −1.2 V forward voltage at −0.5 A and exhibits thermal resistance of 227–260 K/W (junction-to-ambient, with 6 cm² drain pad), supporting stable operation up to 150 °C junction temperature.

Key Specifications

Parameter Value and Actual Design Meaning
VDS −20 V - Maximum blocking voltage for 24 V rail or lower systems
ID (continuous) −1.2 A at Tamb = 25 °C - Supports moderate-power load switching without heatsinking
RDS(on) 170–210 mΩ at VGS = −4.5 V - Enables <120 mW conduction loss at 1 A
VGS(th) −0.45 to −0.95 V - Ensures full enhancement with 1.8 V microcontroller GPIO
QG(tot) 3.3–4 nC - Allows nanosecond-scale switching with low gate-drive power
Ciss 365 pF - Limits capacitive loading on driving logic while maintaining EMI control
Tj max 150 °C - Compatible with industrial ambient environments without derating

Pinout & Package

SOT23 (TO-236AB) plastic surface-mounted package with 3 leads; standard footprint optimized for reflow and wave soldering per JEDEC MO-203AA.

Pin/Terminal Circuit Role Design Meaning
1 Gate (G) Control terminal; accepts −8 to +8 V bias; low threshold enables 1.8 V logic compatibility
2 Source (S) Reference node for gate drive; connects to positive rail in high-side configuration
3 Drain (D) Switched output node; thermally enhanced via 6 cm² copper pad per datasheet layout guidance

Key Features

Feature Design Value
1.8 V RDS(on) rated Guaranteed turn-on and low on-resistance with 1.8 V logic-level gate drive
Very fast switching 26 ns rise / 17 ns fall time enables >10 MHz PWM operation in DC-DC or LED drivers
Trench MOSFET architecture Reduces specific on-resistance by ~30% vs planar P-channel equivalents at same die size
Low gate leakage <−100 nA at ±8 V ensures minimal standby current in battery-powered high-side switches

Applications

Relay Driver High-Speed Line Driver

Use Scenario: Driving electromagnetic relays in PLC I/O modules with 3.3 V or 1.8 V microcontrollers.

IC Role / Device Role / Timing Role: High-side switch controlling relay coil current path; operates in static on/off mode with <10 µs transition.

Use Value: Low VGS(th) eliminates need for level-shifting circuitry; 170 mΩ RDS(on) limits coil power dissipation to <200 mW at 1.2 A.

Use Scenario: Transmitting TTL/CMOS signals across noisy industrial backplanes with controlled edge rates.

IC Role / Device Role / Timing Role: Active pull-up switch enabling bidirectional or open-drain signaling with fast edge control.

Use Value: 26 ns rise time meets 10 Mbps RS-485 driver timing budgets; low Ciss minimizes signal distortion.

High-Side Load Switch Switching Circuit

Use Scenario: Power gating individual subsystems (e.g., sensor rails, display backlight) in portable medical devices.

IC Role / Device Role / Timing Role: Controlled high-side power switch with inrush limiting via gate resistor; no body-diode reverse conduction path.

Use Value: −0.7 V VSD forward drop prevents backfeed during hot-swap; 150 °C Tj rating supports sealed enclosure thermal design.

Use Scenario: Building discrete synchronous rectifier or OR-ing diode circuits in low-voltage DC-DC converters.

IC Role / Device Role / Timing Role: Unidirectional power path controller replacing Schottky diodes to reduce forward loss.

Use Value: 210 mΩ max RDS(on) cuts conduction loss by >60% vs 0.3 V Schottky at 1 A; QGD = 0.5 nC minimizes shoot-through risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN2011UFD-7 −20 V, −2.2 A, 110 mΩ @ −4.5 V; WDFN-6 package; higher current, smaller footprint Requires PCB redesign for 2×2 mm WDFN; better for space-constrained 2 A loads Select when board area is constrained and ≥2 A capability is needed; not drop-in due to package and pinout change
SI2301DS-T1-BE3 −20 V, −2.4 A, 125 mΩ @ −4.5 V; SOT23; higher ID but wider VGS(th) range (−0.4 to −1.3 V) Less predictable 1.8 V turn-on; may require gate pull-up for margin in low-VGS cases Prefer when higher current is primary requirement and gate drive margin allows for wider threshold spread

Compared with PMV160UPVL, DMN2011UFD-7 delivers 83% higher current in half the footprint but requires layout revision, while SI2301DS-T1-BE3 offers greater current headroom at the cost of less deterministic 1.8 V turn-on behavior-making PMV160UPVL optimal for guaranteed low-voltage switching in legacy SOT23 designs.

Availability

PMV160UPVL is available at Aetrix Electronics and suitable for relay drivers, high-speed line drivers, high-side load switches, and discrete switching circuits requiring stable component supply across industrial control, portable instrumentation, and embedded power management programs.

Supply support for PMV160UPVL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs, ESD protection, and logic ICs.

The PMV160UPVL belongs to Nexperia's TrenchMOS P-channel portfolio, engineered specifically for low-voltage, logic-level switching in space-constrained consumer and industrial applications where 1.8 V compatibility and fast transient response are essential.

FAQ

What is the maximum continuous drain current for PMV160UPVL at 100 °C ambient?

The maximum continuous drain current is −0.8 A at Tamb = 100 °C with standard FR4 PCB mounting (single-sided copper, tin-plated, no extended drain pad). This derating reflects thermal resistance limitations and ensures safe junction temperature below 150 °C under steady-state conditions.

Can PMV160UPVL be driven directly from a 1.8 V GPIO without a level shifter?

Yes-its gate-source threshold voltage range of −0.45 to −0.95 V guarantees enhancement and stable RDS(on) performance at VGS = −1.8 V, confirmed by datasheet characterization at VGS = −1.8 V (RDS(on) = 280–380 mΩ at −0.5 A).

What is the safe operating area (SOA) limitation at DC operation with 6 cm² drain pad?

At DC and Tsp = 25 °C with 6 cm² drain pad, the SOA limit is defined by Ptot = 2170 mW, corresponding to −2.1 A at −10 V VDS. This exceeds the −1.2 A rated current, confirming robust DC capability under optimized thermal layout.

Does PMV160UPVL include integrated ESD protection?

No-PMV160UPVL has no built-in ESD protection diodes. Its gate oxide is rated for ±8 V absolute maximum VGS, and external HBM ESD protection (e.g., 1 kV minimum) must be implemented in system-level design per IEC 61000-4-2 requirements.

PMV160UPVL Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Rds On (Max) @ Id, Vgs:
210mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id:
950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
4 nC @ 4.5 V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
365 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
335mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-236AB

PMV160UPVL FAQ

1.How can I place an order for PMV160UPVL through Aetrix?

Please submit a Request for Quotation (RFQ) for PMV160UPVL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMV160UPVL reliable?

The price and inventory of PMV160UPVL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMV160UPVL is usually 5 days.

3.What payment methods are accepted for PMV160UPVL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMV160UPVL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMV160UPVL?

PMV160UPVL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMV160UPVL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMV160UPVL?

For technical support, including PMV160UPVL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMV160UPVL requirements.

6.How does Aetrix verify that PMV160UPVL is sourced from the original manufacturer or authorized distributors?

All PMV160UPVL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMV160UPVL meets industry standards.

7.What is the process for return or replacement of PMV160UPVL?

All PMV160UPVL units undergo pre-shipment inspection (PSI). If there is an issue with PMV160UPVL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMV160UPVL part is unused and in its original packaging.

Return procedure for PMV160UPVL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

PMV160UPVL Tags

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