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NXP Semiconductors PMV170UN,215
- Part No.:
- PMV170UN,215
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
PMV170UN,215.pdf
- Description:
- MOSFET N-CH 20V 1A TO236AB
- Quantity:
- Payment:
- Shipping:
Inventory:9,683
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Product details
Overview
PMV170UN from NXP Semiconductors is a single N-channel enhancement-mode Trench MOSFET in SOT23 (TO-236AB) package, rated for 20 V drain-source voltage, 1.5 A continuous drain current at VGS = 4.5 V and 25 °C, and featuring 140–165 mΩ RDS(on) at same conditions. It serves as a low-side load switch or high-speed line driver in compact power management circuits.
For engineers reviewing the PMV170UN datasheet, PMV170UN pinout, PMV170UN application, or PMV170UN equivalent, key selection criteria include its low 0.4–1.0 V gate threshold voltage, fast 6 ns turn-on delay and 8 ns fall time, 1.1–1.65 nC total gate charge, and suitability for FR4 PCBs with 6 cm² drain pad - all critical for space-constrained, low-voltage switching designs.
Technical Context
This MOSFET employs Trench MOSFET technology to achieve low RDS(on) and fast switching performance in a 3-pin SOT23 package. Its gate threshold voltage range (0.4–1.0 V) enables direct drive from 1.8 V and 2.5 V logic, while its 1.65 nC max total gate charge supports efficient gate driving at high frequencies.
The device exhibits 83 pF input capacitance and 26 pF reverse transfer capacitance at 10 V VDS, with thermal resistance from junction to ambient of 333–385 K/W in free air and 85–100 K/W to solder point - confirming its design for low-power, thermally constrained applications without heatsinking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - maximum allowable drain-to-source voltage before breakdown; defines safe operating ceiling in low-voltage systems. |
| RDS(on) | 140–165 mΩ @ VGS = 4.5 V, ID = 1 A, Tj = 25 °C - determines conduction loss and heat generation under typical logic-level drive. |
| VGS(th) | 0.4–1.0 V @ ID = 250 µA - ensures reliable turn-on with 1.8 V/2.5 V microcontrollers and low-power logic interfaces. |
| QG(tot) | 1.1–1.65 nC - quantifies gate drive energy required; enables estimation of driver strength and switching loss at >1 MHz frequencies. |
| td(on)/tf | 6 ns / 8 ns @ VDS = 10 V, ID = 1 A, RG(ext) = 6 Ω - supports clean, fast transitions essential for high-efficiency PWM and digital signal routing. |
| Ptot | 455 mW @ Tamb = 25 °C on FR4 (6 cm² drain pad) - sets practical power handling limit without forced cooling in standard layouts. |
Pinout & Package
Package: TO-236AB (SOT23), surface-mount plastic package with 3 leads, 2.8 mm × 1.4 mm footprint, 1.1 mm height, and drain-connected tab for thermal conduction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | G (gate) | Control terminal; accepts logic-level voltage to modulate channel conductivity; low 100 nA leakage ensures stable biasing. |
| 2 | S (source) | Reference node for gate drive and current return path; internally tied to substrate; requires low-impedance ground connection. |
| 3 | D (drain) | Power output terminal; connects to load; thermally coupled to PCB pad (6 cm² recommended) for 455 mW dissipation capability. |
Key Features
| Feature | Design Value |
|---|---|
| Low threshold voltage | 0.4–1.0 V VGS(th) enables direct interface with 1.8 V and 2.5 V I/O domains without level-shifting circuitry. |
| Fast switching speed | 6 ns turn-on delay + 8 ns fall time allows operation up to several MHz in PWM and digital line driving applications. |
| Trench MOSFET architecture | Delivers 140–165 mΩ RDS(on) at 4.5 V drive, reducing conduction loss by ~30% versus planar equivalents in same package. |
| Optimized gate charge | 1.1–1.65 nC QG(tot) minimizes driver power consumption and simplifies gate driver selection for battery-powered systems. |
Applications
| Relay Driver | High-Speed Line Driver |
|---|---|
|
Use Scenario: Replacing mechanical relays in PLC I/O modules and industrial control outputs where low power, silent operation, and long lifetime are required. IC Role / Device Role / Timing Role: Low-side switch controlling coil current; driven by 3.3 V microcontroller GPIO with minimal external components. Use Value: Eliminates relay bounce and contact wear; leverages PMV170UN's 1.5 A rating and 0.7 VSD body diode forward drop for fast coil demagnetization. |
Use Scenario: Driving terminated transmission lines (e.g., RS-422, LVDS stubs) in portable test equipment and sensor interfaces. IC Role / Device Role / Timing Role: Active pull-down element in push-pull or open-drain configurations; switched at >1 MHz with controlled edge rates. Use Value: Achieves <10 ns transition times using PMV170UN's low Ciss (83 pF) and QG, minimizing signal distortion and EMI in high-fidelity data paths. |
| Low-Side Load Switch | Switching Power Supply Sync Rectifier |
|
Use Scenario: Enabling/disabling power to peripheral ICs (e.g., sensors, radios) in wearables and IoT nodes to meet µA-level standby current targets. IC Role / Device Role / Timing Role: Series pass element between battery and load; controlled by enable signal with soft-start via gate resistor. Use Value: Delivers <1 µA IDSS leakage and 0.4 V VGS(th), ensuring near-zero quiescent current when off and robust turn-on at 1.8 V logic levels. |
Use Scenario: Replacing Schottky diodes in 5 V buck converter outputs for improved efficiency in space-limited DC-DC modules. IC Role / Device Role / Timing Role: Synchronous rectifier switched complementary to high-side FET; body diode conducts during dead-time. Use Value: Reduces conduction loss vs. 0.35 V Schottky by leveraging PMV170UN's 140 mΩ RDS(on) and 0.8–1.2 V VSD, yielding >2% efficiency gain at 1 A load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel low-voltage switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2004K-7 | RDS(on) = 120–150 mΩ @ 4.5 V; higher 2.2 A ID; same SOT23 package but different pinout (G-D-S vs. G-S-D). | Higher current capability suits higher-load applications, but pinout mismatch requires PCB redesign. | Select DMN2004K-7 only if layout allows re-routing; verify gate drive compatibility with lower VGS(th) (0.5–1.0 V). |
| AO3400 | RDS(on) = 28–35 mΩ @ 10 V; 5.7 A ID; larger SO-8 package; VGS(th) = 0.8–1.5 V - less compatible with 1.8 V logic. | Better conduction performance at 3.3 V+ drive, but incompatible footprint and higher gate threshold limits low-voltage use. | Choose AO3400 for higher-current, higher-VGS systems; avoid for 1.8 V/2.5 V logic-driven designs where PMV170UN excels. |
Compared with DMN2004K-7 and AO3400, the PMV170UN uniquely balances ultra-low gate threshold (0.4 V min), SOT23 footprint, and verified 1.5 A capability - making it optimal for miniaturized, low-voltage, logic-direct-switching applications where pinout integrity and sub-2 V drive are mandatory.
Availability
PMV170UN is available at Aetrix Electronics and suitable for relay drivers, high-speed line drivers, low-side load switches, and switching circuits requiring stable component supply across prototyping, pilot production, and volume manufacturing phases.
Supply support for PMV170UN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT markets.
The PMV170UN belongs to NXP's TrenchMOS family - engineered specifically for low-voltage, high-efficiency discrete switching in space-constrained consumer and industrial electronics.
FAQ
What is the maximum continuous drain current for PMV170UN at 100 °C ambient temperature?
The PMV170UN supports a continuous drain current of 0.9 A at Tamb = 100 °C with VGS = 4.5 V, as specified in Table 5 (Limiting values). This derating reflects thermal constraints of the SOT23 package on standard FR4 PCBs and must be applied when operating in enclosed or high-temperature environments. Always verify actual junction temperature using Rth(j-a) = 333–385 K/W.
Does PMV170UN have a built-in body diode, and what is its forward voltage?
Yes, the PMV170UN includes an intrinsic source-drain body diode. Its forward voltage is 0.8–1.2 V at IS = 0.7 A and Tj = 25 °C, per Table 7 characteristics. This diode enables freewheeling in inductive loads and synchronous rectification, though its VSD is higher than discrete Schottky diodes - a trade-off for monolithic integration in the SOT23 footprint.
Can PMV170UN be driven directly from a 1.8 V microcontroller GPIO?
Yes, PMV170UN can be reliably driven from a 1.8 V GPIO because its gate threshold voltage ranges from 0.4 V to 1.0 V (min/max at ID = 250 µA), and it delivers usable RDS(on) down to VGS = 1.8 V (237–337 mΩ at ID = 0.25 A). This makes PMV170UN suitable for ultra-low-voltage logic interfaces without external level shifters.
What is the thermal resistance from junction to solder point for PMV170UN?
The PMV170UN has a junction-to-solder-point thermal resistance (Rth(j-sp)) of 85–100 K/W, as specified in Table 6. This value assumes standard SOT23 mounting on FR4 PCB with tin-plated copper; it enables accurate thermal modeling when the drain pad is connected to a local thermal plane or via array, improving power handling beyond ambient-limited ratings.
Is PMV170UN suitable for automotive applications?
No, PMV170UN is not automotive-qualified. Per Section 12.3 of the datasheet, NXP explicitly states that unless otherwise indicated, products like PMV170UN are non-automotive qualified and not tested to AEC-Q101 or automotive reliability standards. Its use in automotive systems requires full customer validation and carries no NXP warranty for such applications.
PMV170UN,215 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 165mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.65 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 83 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 325mW (Ta), 1.14W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23 (TO-236AB)
PMV170UN,215 FAQ
1.How can I place an order for PMV170UN,215 through Aetrix?
Please submit a Request for Quotation (RFQ) for PMV170UN,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMV170UN,215 reliable?
The price and inventory of PMV170UN,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMV170UN,215 is usually 5 days.
3.What payment methods are accepted for PMV170UN,215?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMV170UN,215 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMV170UN,215?
PMV170UN,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMV170UN,215 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMV170UN,215?
For technical support, including PMV170UN,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMV170UN,215 requirements.
6.How does Aetrix verify that PMV170UN,215 is sourced from the original manufacturer or authorized distributors?
All PMV170UN,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMV170UN,215 meets industry standards.
7.What is the process for return or replacement of PMV170UN,215?
All PMV170UN,215 units undergo pre-shipment inspection (PSI). If there is an issue with PMV170UN,215, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMV170UN,215 part is unused and in its original packaging.
Return procedure for PMV170UN,215:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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