My Inquiry
My Account
NXP Semiconductors PMV185XN,215
- Part No.:
- PMV185XN,215
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
PMV185XN,215.pdf
- Description:
- MOSFET N-CH 30V 1.1A TO236AB
- Quantity:
- Payment:
- Shipping:
Inventory:8,036
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
PMV185XN from Nexperia is a single N-channel Trench MOSFET in SOT23 (TO-236AB) package, rated for 30 V drain-source voltage, 1.2 A continuous drain current at 4.5 V gate drive and 25 °C ambient, and featuring 185 mΩ typical RDS(on) at VGS = 4.5 V and ID = 1.1 A. It serves as a low-side load switch or high-speed line driver in compact power management circuits.
For engineers reviewing the PMV185XN datasheet, PMV185XN pinout, PMV185XN application, or PMV185XN equivalent, key selection criteria include its 30 V VDS rating, 185 mΩ RDS(on) at 4.5 V gate drive, SOT23 footprint compatibility, thermal resistance of 240 K/W (junction-to-ambient, PCB-mounted), and fast switching performance with 7 ns turn-on delay and 7 ns fall time.
Technical Context
This device uses Trench MOSFET technology to achieve low on-resistance and fast switching. Its gate threshold voltage ranges from 0.5 V to 1.5 V at 25 °C, enabling reliable enhancement-mode operation with standard logic-level drive.
It supports continuous drain current up to 1.1 A at 25 °C ambient (FR4 PCB, 6 cm² drain pad), derating to 0.7 A at 100 °C ambient. The source-drain diode exhibits 0.8–1.2 V forward voltage at 0.7 A and 25 °C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum allowable drain-source blocking voltage; defines safe operating range in low-voltage DC-DC and load-switch applications. |
| RDS(on) | 185 mΩ (typ) at VGS = 4.5 V, ID = 1.1 A, Tj = 25 °C - Enables <1.1 W conduction loss at 1.1 A, suitable for space-constrained 3.3 V/5 V logic-driven switches. |
| ID (cont) | 1.1 A at Tamb = 25 °C (FR4, 6 cm² drain pad) - Specifies usable continuous current under standard PCB thermal conditions. |
| QG(tot) | 0.87–1.3 nC - Low total gate charge enables efficient driving from microcontroller GPIOs without external buffers. |
| td(on)/tf | 7 ns / 7 ns - Fast switching transitions reduce switching losses in PWM-based load control up to several MHz. |
| VGS(th) | 0.5–1.5 V - Ensures full enhancement with 1.8 V or higher logic families; compatible with 3.3 V and 5 V microcontrollers. |
| Ciss | 76 pF - Low input capacitance minimizes gate drive power and improves high-frequency response. |
Pinout & Package
Package: TO-236AB (SOT23), surface-mount plastic package with 3 leads; dimensions per Figure 18 (0.9 mm × 1.9 mm × 1.1 mm body, 0.45 mm lead pitch).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Control terminal; requires ≤12 V gate-source voltage; low 100 nA leakage ensures stable off-state with high-impedance drivers. |
| 2 | Source (S) | Reference node for gate drive and current return path; tied to system ground in low-side switch configurations. |
| 3 | Drain (D) | Power output terminal; thermally connected to 6 cm² PCB copper pad for 240 K/W Rth(j-a) dissipation. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) | 185 mΩ typical at 4.5 V drive - reduces conduction loss and self-heating in battery-powered and thermally constrained designs. |
| Trench MOSFET architecture | Enables optimized cell density and vertical current flow - delivers superior RDS(on) × area efficiency vs planar MOSFETs in SOT23. |
| Fast switching | 7 ns turn-on delay + 7 ns fall time - supports high-frequency PWM control (e.g., LED dimming, motor commutation) with minimal dead-time overhead. |
| Logic-level gate drive | VGS(th) max 1.5 V - ensures full enhancement using 1.8 V, 3.3 V, or 5 V MCU outputs without level-shifting circuitry. |
Applications
| Relay Driver | High-Speed Line Driver |
|---|---|
Use Scenario: Replacing electromechanical relays in industrial I/O modules to improve reliability and lifetime. IC Role / Device Role / Timing Role: Low-side switch controlling coil current; driven by PLC output or microcontroller GPIO. Use Value: Eliminates contact wear and bounce; enables 100 kHz+ cycling vs mechanical relay's 10 Hz limit, while dissipating <1.1 W at 1.1 A. |
Use Scenario: Driving terminated transmission lines in USB 2.0, LVDS, or CAN FD physical layer interfaces. IC Role / Device Role / Timing Role: Active pull-down element in push-pull or open-drain line driver stages. Use Value: 7 ns fall time ensures clean edge integrity for signals up to 50 Mbps; 76 pF Ciss avoids excessive capacitive loading on data lines. |
| Low-Side Load Switch | Switching Power Supply Sync Rectifier |
Use Scenario: Enabling/disabling power rails (e.g., 3.3 V, 5 V) in portable electronics with inrush current limiting. IC Role / Device Role / Timing Role: N-channel MOSFET configured as low-side switch between load and ground. Use Value: 185 mΩ RDS(on) limits voltage drop to <200 mV at 1 A, preserving rail accuracy; SOT23 footprint saves board area vs SO-8 alternatives. |
Use Scenario: Replacing Schottky diodes in buck converter synchronous rectification stages for improved efficiency. IC Role / Device Role / Timing Role: Controlled switch replacing freewheeling diode; driven by controller's complementary PWM signal. Use Value: Reduces conduction loss by >50% vs 0.4 V Schottky at 1 A; 0.24 nC QGD minimizes shoot-through risk during gate transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2004LK-7 | RDS(on) = 190 mΩ (typ) at VGS = 4.5 V; same SOT23-3 package; VDS = 20 V (lower than PMV185XN's 30 V) | Not suitable for 24 V bus or 30 V transient-tolerant designs; acceptable only in ≤20 V systems. | Select when 20 V rating suffices and sourcing from Diodes Inc. is preferred; verify layout compatibility with identical pinout. |
| AO3400 | RDS(on) = 28 mΩ (typ) at VGS = 10 V but 44 mΩ at 4.5 V; SOT23-3; VDS = 30 V; higher gate charge (QG = 7.5 nC) | Superior conduction loss at 10 V drive, but significantly slower switching and higher drive power required at 4.5 V. | Choose only if gate drive ≥10 V is available and lower RDS(on) outweighs increased switching loss and drive complexity. |
Compared with DMN2004LK-7, PMV185XN offers higher 30 V VDS margin for industrial transients; versus AO3400, it delivers faster switching and lower gate drive demand at 4.5 V despite higher RDS(on), making it optimal for logic-level, high-frequency switching.
Availability
PMV185XN is available at Aetrix Electronics and suitable for relay driver, high-speed line driver, and low-side load switch applications requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for PMV185XN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products division. It focuses on automotive, industrial, computing, consumer, and wearable markets.
The PMV185XN belongs to Nexperia's TrenchMOS logic-level PowerMOS family, engineered for high-efficiency, space-constrained switching in battery-powered and thermally sensitive applications.
FAQ
What is the maximum continuous drain current for PMV185XN under standard PCB conditions?
The PMV185XN supports 1.1 A continuous drain current when mounted on an FR4 PCB with a 6 cm² copper pad for the drain, at 25 °C ambient temperature. This rating drops to 0.7 A at 100 °C ambient due to thermal derating, as specified in Table 5 of the datasheet.
Does PMV185XN require a gate resistor for reliable switching?
The PMV185XN does not mandate an external gate resistor for basic operation, but a 6 Ω resistor is used in the datasheet's fall time test condition (Table 7). Adding a small series resistor (1–10 Ω) helps dampen ringing and control dV/dt, especially in high-noise environments or when driving inductive loads.
Can PMV185XN be used in automotive applications?
No - the PMV185XN is not automotive-qualified. The datasheet explicitly states that unless otherwise indicated, Nexperia products are not tested or warranted for automotive use. For AEC-Q101-compliant alternatives, consult Nexperia's automotive-grade TrenchMOS portfolio.
What is the thermal resistance from junction to solder point for PMV185XN?
The PMV185XN has a typical Rth(j-sp) of 85–100 K/W, measured from junction to solder point under standard mounting conditions. This value enables accurate thermal modeling when the drain pad is connected to internal PCB planes or thermal vias.
How does the RDS(on) of PMV185XN change with temperature?
The PMV185XN's RDS(on) increases with junction temperature: it rises from 185 mΩ (typ) at 25 °C to 300–400 mΩ (max) at 150 °C, as shown in Table 7. Figure 11 confirms ~1.5× increase over the full –55 °C to 150 °C range, critical for thermal design margining.
PMV185XN,215 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 250mOhm @ 1.1A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.3 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 76 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 325mW (Ta), 1.275W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23 (TO-236AB)
PMV185XN,215 FAQ
1.How can I place an order for PMV185XN,215 through Aetrix?
Please submit a Request for Quotation (RFQ) for PMV185XN,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMV185XN,215 reliable?
The price and inventory of PMV185XN,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMV185XN,215 is usually 5 days.
3.What payment methods are accepted for PMV185XN,215?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMV185XN,215 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMV185XN,215?
PMV185XN,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMV185XN,215 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMV185XN,215?
For technical support, including PMV185XN,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMV185XN,215 requirements.
6.How does Aetrix verify that PMV185XN,215 is sourced from the original manufacturer or authorized distributors?
All PMV185XN,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMV185XN,215 meets industry standards.
7.What is the process for return or replacement of PMV185XN,215?
All PMV185XN,215 units undergo pre-shipment inspection (PSI). If there is an issue with PMV185XN,215, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMV185XN,215 part is unused and in its original packaging.
Return procedure for PMV185XN,215:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PMV185XN,215 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
