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NXP Semiconductors PMV22EN,215
- Part No.:
- PMV22EN,215
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
PMV22EN,215.pdf
- Description:
- MOSFET N-CH 30V 5.2A TO236AB
- Quantity:
- Payment:
- Shipping:
Inventory:5,670
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Product details
Overview
PMV22EN,215 from NXP Semiconductors is a 30 V, 5.2 A N-channel enhancement-mode Trench MOSFET in SOT23 (TO-236AB) package, designed for low-side switching with logic-level gate drive compatibility, 17 mΩ typical RDS(on) at VGS = 10 V, and fast 4 ns turn-on delay-used in high-speed line drivers and relay drivers.
For engineers reviewing the PMV22EN,215 datasheet, PMV22EN,215 pinout, PMV22EN,215 application, or PMV22EN,215 equivalent, this discrete power MOSFET supports compact load-switch designs requiring <1.5 V gate threshold, sub-100 ns turn-off delay, and thermal resistance as low as 116 K/W with 6 cm² drain pad.
Technical Context
This N-channel MOSFET employs Trench MOSFET technology to achieve low on-resistance and fast switching. Its gate-source threshold voltage (1.5 V typ.) enables direct interfacing with 3.3 V and 5 V logic, while its 8.6 nC total gate charge and 52 pF reverse transfer capacitance support high-frequency operation up to several MHz.
The device features an integrated source-drain diode with 0.72 V forward voltage at 0.93 A, and operates across –55 °C to 150 °C ambient temperature. Safe operating area (SOA) is defined up to 20 A peak drain current with 10 µs pulse width and 30 V VDS.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V maximum - supports 24 V rail switching with 20 % margin against transients |
| RDS(on) | 17 mΩ typical at VGS = 10 V, ID = 5.2 A - limits conduction loss to ≤0.46 W at full current |
| VGS(th) | 1.5 V typical - ensures reliable turn-on with 3.3 V microcontroller GPIO without level-shifting |
| QG(tot) | 8.6 nC typical - enables efficient 1–2 MHz PWM switching with low gate-drive power |
| td(off) | 100 ns typical - supports high-speed digital load control with minimal dead-time overhead |
| Ptot | 510 mW at Tamb = 25 °C - requires thermal pad or airflow for >2 A continuous operation |
| Ciss | 480 pF typical - determines gate drive impedance requirements for clean edge integrity |
Pinout & Package
SOT23 (TO-236AB) plastic surface-mounted package, 3-lead, 1.2 mm × 2.9 mm footprint, 1.1 mm height; optimized for reflow soldering with standard 0.6 mm pitch land pattern.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts logic-level input; 100 nA max gate leakage at ±20 V ensures low standby current |
| 2 (S) | Source | Reference node for gate drive; tied to ground in low-side configurations; carries full load current |
| 3 (D) | Drain | High-side connection point; thermally coupled to PCB copper pad; handles 30 V blocking and 5.2 A conduction |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | VGS(th) = 1.5 V typ. enables direct 3.3 V/5 V MCU interface without external driver circuitry |
| Trench MOSFET architecture | Delivers 17 mΩ RDS(on) in SOT23 - 40 % lower than planar equivalents at same die size |
| Fast switching performance | 4 ns td(on), 15 ns tr, 100 ns td(off), 40 ns tf - reduces switching losses in >500 kHz DC-DC or motor gate drives |
| Robust SOA | Rated for 20 A peak drain current (10 µs pulse) and 30 V VDS - withstands inductive kickback in relay and solenoid loads |
| Thermally enhanced layout | Rth(j-a) = 116 K/W with 6 cm² drain pad - allows 3.3 A continuous current at 70 °C ambient |
Applications
| Relay Driver | High-Speed Line Driver |
|---|---|
Use Scenario: Driving electromagnetic relays in industrial PLC I/O modules where fast coil de-energization prevents contact arcing. IC Role / Device Role / Timing Role: Low-side switch controlling relay coil current path; turns off in 100 ns to suppress back-EMF with snubber-free operation. Use Value: Eliminates need for external flyback diode due to robust SOA and integrated body diode recovery capability. | Use Scenario: Transmitting TTL/CMOS signals across 50 Ω transmission lines in test equipment and data acquisition systems. IC Role / Device Role / Timing Role: Active pull-down element in push-pull output stage; switches <10 ns edge transitions with minimal overshoot. Use Value: 52 pF Crss and 480 pF Ciss enable clean 100 Mbps signal integrity without external termination tuning. |
| Low-Side Load Switch | Switching Power Supply |
Use Scenario: Enabling/disabling 12 V peripheral rails (e.g., sensors, fans) in battery-powered IoT gateways. IC Role / Device Role / Timing Role: High-efficiency series pass element; controlled by microcontroller GPIO with soft-start via gate resistor. Use Value: 17 mΩ RDS(on) limits voltage drop to <63 mV at 3.7 A, preserving system efficiency and thermal headroom. | Use Scenario: Synchronous rectification in 30 V-input buck converters for telecom power modules. IC Role / Device Role / Timing Role: Secondary-side switch replacing Schottky diode; driven by gate driver IC with precise timing alignment. Use Value: 8.6 nC QG(tot) allows low-loss 1 MHz operation with <100 mW gate drive loss using 5 Ω driver impedance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel low-side switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2004LK-7 | 20 V VDS, 4.2 A ID, 25 mΩ RDS(on) - lower voltage rating and higher on-resistance | Not suitable for 24 V bus applications; limited to ≤15 V systems | Select only if operating voltage stays below 16 V and thermal budget allows higher conduction loss. |
| SI2302DS-T1-GE3 | 20 V VDS, 2.6 A ID, 75 mΩ RDS(on) - significantly higher on-resistance and lower current rating | Restricted to low-power signal switching; unsuitable for >1 A load switching | Choose only for cost-sensitive, low-current (<1 A), low-voltage (<12 V) logic buffering roles. |
Compared with PMV22EN,215, DMN2004LK-7 offers smaller footprint but sacrifices 33 % higher RDS(on) and 30 % lower voltage margin, while SI2302DS-T1-GE3 trades performance for cost in sub-1 A applications-neither matches the 30 V/5.2 A/17 mΩ balance of PMV22EN,215.
Availability
PMV22EN,215 is available at Aetrix Electronics and suitable for relay drivers, high-speed line drivers, low-side load switches, and switching power supplies requiring stable component supply and long-term industrial availability.
Supply support for PMV22EN,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT markets.
The PMV22EN,215 belongs to NXP's TrenchMOS family of small-signal power MOSFETs, engineered for high-efficiency, space-constrained low-side switching in consumer, industrial, and communications equipment.
FAQ
What is the maximum continuous drain current for PMV22EN,215 at 100 °C ambient temperature?
The PMV22EN,215 supports 3.3 A continuous drain current at Tamb = 100 °C when VGS = 10 V, per Table 4 Limiting Values. This derating reflects thermal constraints of the SOT23 package without extended copper; actual current depends on PCB layout and airflow. The PMV22EN,215 datasheet specifies 5.2 A at 25 °C ambient, dropping to 3.3 A at 100 °C due to junction temperature limits.
Does PMV22EN,215 have a built-in body diode, and what is its forward voltage?
Yes, the PMV22EN,215 includes an integrated source-drain body diode rated for 930 mA continuous forward current. At IS = 0.93 A and Tj = 25 °C, the typical forward voltage is 0.72 V, with a maximum of 1.2 V. This diode enables freewheeling in inductive load circuits such as relay drivers. The PMV22EN,215 body diode characteristics are fully specified in Table 6 under "Source-drain diode".
Can PMV22EN,215 be driven directly by a 3.3 V microcontroller GPIO without a level shifter?
Yes, the PMV22EN,215 has a typical gate threshold voltage of 1.5 V and guaranteed turn-on at VGS ≥ 2.5 V, making it compatible with 3.3 V logic. At VGS = 4.5 V, RDS(on) is 22 mΩ (typ.), ensuring low conduction loss. The PMV22EN,215 achieves full enhancement well within 3.3 V logic swing, eliminating need for external level translation in most low-current switching applications.
What is the thermal resistance from junction to ambient for PMV22EN,215 on a standard FR4 PCB?
On a standard FR4 PCB with single-sided 1 oz copper and no extended drain pad, the PMV22EN,215 exhibits Rth(j-a) = 207–245 K/W (typ./max). With a 6 cm² copper pad under the drain, this improves to 116–135 K/W. These values are measured per IEC 60134 and documented in Table 5 of the PMV22EN,215 datasheet. Thermal performance directly impacts maximum sustainable current in real-world layouts.
Is PMV22EN,215 suitable for automotive applications?
No, the PMV22EN,215 is not automotive-qualified. Per Section 10.3 of the NXP datasheet, unless explicitly stated as automotive qualified, the device is not tested or warranted for automotive use. It lacks AEC-Q101 qualification, and NXP disclaims liability for use in safety-critical or life-support systems. For automotive-grade alternatives, consult NXP's automotive-qualified TrenchMOS portfolio-PMV22EN,215 is intended for industrial, consumer, and communications equipment only.
PMV22EN,215 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 22mOhm @ 5.2A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 13 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 480 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 510mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23 (TO-236AB)
PMV22EN,215 FAQ
1.How can I place an order for PMV22EN,215 through Aetrix?
Please submit a Request for Quotation (RFQ) for PMV22EN,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMV22EN,215 reliable?
The price and inventory of PMV22EN,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMV22EN,215 is usually 5 days.
3.What payment methods are accepted for PMV22EN,215?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMV22EN,215 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMV22EN,215?
PMV22EN,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMV22EN,215 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMV22EN,215?
For technical support, including PMV22EN,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMV22EN,215 requirements.
6.How does Aetrix verify that PMV22EN,215 is sourced from the original manufacturer or authorized distributors?
All PMV22EN,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMV22EN,215 meets industry standards.
7.What is the process for return or replacement of PMV22EN,215?
All PMV22EN,215 units undergo pre-shipment inspection (PSI). If there is an issue with PMV22EN,215, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMV22EN,215 part is unused and in its original packaging.
Return procedure for PMV22EN,215:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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