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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PMV230ENEAR

Name: PMV230ENEAR
Brand: Nexperia USA Inc.
SKU: PMV230ENEAR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PMV230ENEAR

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: PMV230ENEAR.pdf

Description:: MOSFET N-CH 60V 1.5A TO236AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PMV230ENEAR from Nexperia is a 60 V, N-channel enhancement-mode Trench MOSFET in SOT23 (TO-236AB) package, designed for low-side switching with logic-level gate drive compatibility (V_GS(th) = 1.3–2.7 V), R_DS(on) = 176–222 mΩ at V_GS = 10 V/ID = 1.5 A, and AEC-Q101 qualification for automotive reliability. It serves as a compact, fast-switching load switch in space-constrained PCBs.

For engineers reviewing the PMV230ENEAR datasheet, PMV230ENEAR pinout, PMV230ENEAR application, or PMV230ENEAR equivalent, key selection criteria include its 2 kV HBM ESD rating, 5.9 A peak drain current capability, thermal resistance of 227–261 K/W (junction-to-ambient), and suitability for relay driving, high-speed line driving, and low-side load switching in automotive and industrial control modules.

Technical Context

This MOSFET employs Trench technology to achieve low on-resistance and fast switching (t_d(on) = 6.3 ns, t_f = 4.6 ns) while maintaining robust avalanche energy handling (6 mJ unclamped). Its gate threshold voltage range (1.3–2.7 V) ensures reliable turn-on with 3.3 V or 5 V logic controllers.

The device features integrated source-drain diode (V_SD = 0.8–1.2 V at I_S = 0.8 A), supports continuous drain current up to 1.5 A at T_amb = 25 °C, and delivers 1.45 W total power dissipation with proper PCB copper pad layout (6 cm² drain pad).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage for 12 V/24 V automotive and industrial bus applications.
R_DS(on)	176–222 mΩ @ V_GS = 10 V, I_D = 1.5 A - Enables <150 mW conduction loss at 1 A, reducing thermal stress in compact layouts.
V_GS(th)	1.3–2.7 V @ I_D = 250 µA - Ensures full enhancement with standard 3.3 V microcontroller GPIO without level-shifting.
Q_G(tot)	3.9–4.8 nC - Low gate charge enables efficient switching at >1 MHz frequencies with minimal driver power demand.
T_j max	150 °C - Junction temperature limit compatible with under-hood automotive environments and sealed industrial enclosures.
ESD Rating	2000 V HBM - Robust electrostatic immunity simplifies handling and assembly in non-ESD-controlled production lines.
P_tot	1.45 W @ T_sp = 25 °C - Achievable with standard FR4 PCB and 6 cm² drain copper pad, eliminating need for heatsinks.

Pinout & Package

Package: SOT23 (TO-236AB), surface-mount plastic package with 3 leads, footprint per Figure 19 (reflow soldering) and Figure 20 (wave soldering); dimensions: 2.9 × 1.3 × 1.0 mm (L × W × H), drain-connected tab for thermal conduction.

Pin/Terminal	Circuit Role	Design Meaning
1	G (Gate)	Control terminal; accepts logic-level input (3.3 V/5 V); requires <10 µA leakage current at ±20 V.
2	S (Source)	Reference node for gate drive and current return path; tied to system ground in low-side configurations.
3	D (Drain)	High-side connection point for load; thermally connected to PCB copper pad (6 cm²) for 1.45 W power handling.

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) ≤ 2.7 V ensures full turn-on using MCU GPIO directly-no external level shifter required.
Fast switching performance	t_r = 8.2 ns, t_f = 4.6 ns minimizes transition losses in PWM-driven loads like solenoids and LEDs.
AEC-Q101 qualification	Validated for automotive-grade reliability including temperature cycling, humidity, and mechanical shock testing.
Integrated ESD protection	2 kV HBM rating eliminates need for external TVS diodes in board-level ESD protection schemes.
Trench MOSFET architecture	Delivers lower R_DS(on) per die area than planar MOSFETs-critical for miniaturized SOT23 footprint.

Applications

Relay Driver

High-Speed Line Driver

Use Scenario: Driving electromagnetic relays in automotive body control modules (BCM) and industrial PLC I/O cards.

IC Role / Device Role / Timing Role: Low-side switch controlling relay coil current (typically 50–150 mA) with precise timing for contact bounce suppression.

Use Value: Fast turn-off (t_f = 4.6 ns) reduces coil energy dissipation and extends relay lifetime; 60 V V_DS withstands inductive kickback spikes.

Use Scenario: Transmitting digital signals across long cables in factory automation networks (e.g., RS-485 stubs, CAN stubs).

IC Role / Device Role / Timing Role: Active pull-down element in push-pull or open-drain line drivers to ensure clean signal edges and impedance matching.

Use Value: Low C_iss (177 pF) and fast switching minimize signal distortion; R_DS(on) < 222 mΩ maintains low DC loss over cable runs.

Low-Side Load Switch

Switching Power Supply Sync Rectifier

Use Scenario: Enabling/disabling 12 V or 24 V subsystems (e.g., sensors, fans, lighting) in automotive infotainment and ADAS ECUs.

IC Role / Device Role / Timing Role: High-efficiency, digitally controlled power rail switch with soft-start capability via gate resistor tuning.

Use Value: 1.5 A continuous current and 1.45 W P_tot support typical loads without derating; SOT23 footprint saves board space vs. SO-8 alternatives.

Use Scenario: Secondary-side synchronous rectification in isolated DC-DC converters (<10 W) for automotive USB-C chargers and sensor power supplies.

IC Role / Device Role / Timing Role: Replaces Schottky diode to reduce forward voltage drop and improve efficiency at light-to-moderate loads.

Use Value: V_SD = 0.8–1.2 V (source-drain diode) provides inherent body-diode conduction during dead time; low Q_G enables gate drive from simple transformer-coupled circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-side switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LK-7	R_DS(on) = 180–230 mΩ @ V_GS = 4.5 V; no AEC-Q101 qualification; higher C_iss (220 pF)	Targeted at consumer/commercial power management-not validated for automotive temperature cycling or humidity stress.	Select when cost sensitivity outweighs automotive qualification requirements and gate drive is ≥4.5 V.
AO3400	R_DS(on) = 28–35 mΩ @ V_GS = 10 V; larger SO-8 package; no HBM ESD rating specified	Higher current capacity (5.7 A) but requires PCB real estate and external ESD protection in harsh environments.	Choose for higher-power loads where thermal headroom and board space permit SO-8 mounting.

Compared with DMN2004LK-7 and AO3400, PMV230ENEAR uniquely balances AEC-Q101 compliance, SOT23 miniaturization, and logic-level drive in a single package-making it optimal for space-constrained automotive modules requiring zero additional protection components.

Availability

PMV230ENEAR is available at Aetrix Electronics and suitable for automotive body electronics, industrial programmable logic controllers (PLCs), and portable medical instrumentation requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for PMV230ENEAR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs, ESD protection, and logic ICs.

The PMV230ENEAR belongs to Nexperia's TrenchMOS® portfolio-engineered specifically for compact, high-efficiency switching in automotive and industrial control systems where logic-level drive, fast response, and ruggedness are mandatory.

FAQ

Is PMV230ENEAR suitable for 3.3 V microcontroller gate drive?

Yes. With a gate threshold voltage range of 1.3–2.7 V and guaranteed turn-on at V_GS = 3.3 V, PMV230ENEAR achieves full enhancement without external level shifting. Its R_DS(on) remains below 262 mΩ at V_GS = 4.5 V, ensuring low conduction loss in 3.3 V systems.

What is the maximum continuous drain current at 85 °C ambient?

At T_amb = 85 °C, the maximum continuous drain current is 1.1 A, derived from the normalized current derating curve (Figure 2) and P_tot = 1.45 W with R_th(j-a) = 227–261 K/W. This assumes standard FR4 PCB with 6 cm² drain copper pad and no forced airflow.

Does PMV230ENEAR include an integrated body diode?

Yes. The MOSFET has an inherent source-drain diode with forward voltage V_SD = 0.8–1.2 V at I_S = 0.8 A and T_j = 25 °C. This diode supports freewheeling current in inductive loads and enables synchronous rectifier operation in low-power DC-DC topologies.

How does the 2 kV HBM ESD rating impact board-level design?

The 2 kV Human Body Model ESD rating allows direct handling and placement without specialized ESD controls during assembly, and eliminates the need for external TVS diodes in many low-energy interfaces. It meets IEC 61000-4-2 Level 2 requirements for system-level transient immunity in non-safety-critical automotive subsystems.

PMV230ENEAR Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 1.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 222mOhm @ 1.5A, 10V

Vgs(th) (Max) @ Id:: 2.7V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 4.8 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 177 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 480mW (Ta), 1.45W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-236AB

PMV230ENEAR FAQ

1.How can I place an order for PMV230ENEAR through Aetrix?

Please submit a Request for Quotation (RFQ) for PMV230ENEAR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMV230ENEAR reliable?

The price and inventory of PMV230ENEAR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMV230ENEAR is usually 5 days.

3.What payment methods are accepted for PMV230ENEAR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMV230ENEAR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMV230ENEAR?

PMV230ENEAR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMV230ENEAR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMV230ENEAR?

For technical support, including PMV230ENEAR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMV230ENEAR requirements.

6.How does Aetrix verify that PMV230ENEAR is sourced from the original manufacturer or authorized distributors?

All PMV230ENEAR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMV230ENEAR meets industry standards.

7.What is the process for return or replacement of PMV230ENEAR?

All PMV230ENEAR units undergo pre-shipment inspection (PSI). If there is an issue with PMV230ENEAR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMV230ENEAR part is unused and in its original packaging.

Return procedure for PMV230ENEAR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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