NXP Semiconductors PMV28UN,215

Overview

PMV28UN from Nexperia is an N-channel enhancement-mode Trench MOSFET in SOT23 (TO-236AB) package, rated for 20 V drain-source voltage, 3.3 A continuous drain current at 25 °C, and 25 mΩ typical R_DS(on) at V_GS = 4.5 V - optimized for low-side load switching in space-constrained DC-DC and power management circuits.

For engineers reviewing the PMV28UN datasheet, PMV28UN pinout, PMV28UN application, or PMV28UN equivalent, key selection criteria include its 0.7 V gate threshold voltage enabling 1.8 V logic-level drive, fast 9 ns turn-on delay, and thermal resistance of 208 K/W (junction-to-ambient, with 6 cm² drain pad), critical for thermally demanding portable and industrial control designs.

Technical Context

This discrete MOSFET employs Trench MOSFET technology to achieve low on-resistance and fast switching. Its gate threshold voltage (0.4–1.0 V) supports direct interface with 1.8 V and 2.5 V microcontrollers, while its 5.8 nC total gate charge enables efficient high-frequency PWM operation up to several MHz in synchronous buck stages.

The device features a built-in source-drain diode with 0.7–1.2 V forward voltage at 0.6 A, supporting freewheeling in inductive loads. Thermal performance is defined for two PCB mounting conditions: standard footprint (R_th(j-a) = 285–330 K/W) and enhanced 6 cm² drain pad (R_th(j-a) = 208–240 K/W), allowing design flexibility across cost- and performance-sensitive applications.

Key Specifications

Pinout & Package

SOT23 (TO-236AB) plastic surface-mounted package: 3-pin, small-outline, lead-free, RoHS-compliant; body dimensions 2.9 mm × 1.3 mm × 1.0 mm (L × W × H); drain-connected tab for thermal relief.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage MOSFET applications.

Compared with DMN2004LK-7 and AO3400, the PMV28UN offers the lowest gate threshold (0.7 V typ) and best balance of R_DS(on), Q_G, and thermal resistance in SOT23 - making it optimal for 1.8 V–3.3 V logic-driven, thermally constrained low-side switching.

Availability

PMV28UN is available at Aetrix Electronics and suitable for relay drivers, high-speed line drivers, and low-side load switches requiring stable component supply, long-term lifecycle assurance, and consistent parametric performance across production batches.

Supply support for PMV28UN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products division, with focus on automotive, industrial, computing, and consumer markets.

The PMV28UN belongs to Nexperia's TrenchMOS portfolio - engineered for high-efficiency, low-voltage switching in space- and power-constrained applications such as portable electronics and industrial controls.

FAQ

What is the maximum continuous drain current for PMV28UN at 100 °C ambient temperature?

The PMV28UN supports 2.2 A continuous drain current at T_amb = 100 °C and V_GS = 4.5 V, as specified in the Limiting Values table. This derating reflects thermal constraints of the SOT23 package on standard FR4 PCBs. At 25 °C, the rating is 3.3 A. Designers must verify PCB copper area and airflow to maintain junction temperature ≤150 °C. The PMV28UN datasheet provides normalized current curves (Fig 2) for precise thermal modeling.

Can PMV28UN be driven directly by a 1.8 V microcontroller GPIO?

Yes, the PMV28UN has a typical gate threshold voltage of 0.7 V and guaranteed maximum of 1.0 V, ensuring full enhancement at 1.8 V V_GS. Its R_DS(on) is 39–65 mΩ at V_GS = 1.8 V and I_D = 2.4 A, enabling usable conduction in low-power modes. For robust switching, ensure gate drive impedance is ≤100 Ω to achieve sub-30 ns rise/fall times. The PMV28UN's low Q_G (5.8 nC) further simplifies 1.8 V drive implementation.

What is the thermal resistance from junction to solder point for PMV28UN?

The PMV28UN has a typical R_th(j-sp) of 60–70 K/W, measured from junction to solder point on FR4 PCB with standard footprint. This parameter is critical for estimating local temperature rise near the device during short-duration pulses. It complements R_th(j-a) (208–240 K/W with 6 cm² drain pad) for multi-layer thermal modeling. The PMV28UN's datasheet specifies this value in Table 6 and supports transient thermal analysis using Fig 4 and Fig 5.

Does PMV28UN include integrated ESD protection?

No, the PMV28UN does not feature integrated ESD protection circuitry. Its gate oxide is rated for ±8 V absolute maximum V_GS, and gate leakage remains ≤100 nA at ±8 V - indicating standard thin-oxide construction without on-die clamps. System-level ESD protection (e.g., TVS diodes on gate traces) is recommended for handling environments per IEC 61000-4-2. The PMV28UN's product data sheet makes no mention of HBM or CDM ratings, confirming absence of built-in ESD structures.

What is the source-drain diode forward voltage of PMV28UN at 0.6 A?

The source-drain diode forward voltage (V_SD) of the PMV28UN is 0.7–1.2 V at I_S = 0.6 A, V_GS = 0 V, and T_j = 25 °C, as specified in Table 7. This body diode supports freewheeling in inductive loads like relays and solenoids. Its relatively low V_SD reduces conduction loss compared to external Schottky diodes in some low-duty-cycle applications. The PMV28UN's diode characteristics are detailed in Fig 16 of the datasheet.