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NXP Semiconductors PMV30UN,215
- Part No.:
- PMV30UN,215
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
PMV30UN,215.pdf
- Description:
- MOSFET N-CH 20V 5.7A TO236AB
- Quantity:
- Payment:
- Shipping:
Inventory:8,755
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Product details
Overview
PMV30UN from Nexperia is an N-channel enhancement-mode TrenchMOS™ power MOSFET in SOT23 package, designed for ultra-low RDS(on) switching in battery-powered systems. It delivers 5.7 A continuous drain current at VGS = 4.5 V, 36 mΩ max RDS(on) at 25 °C, 20 V VDS rating, and operates up to 150 °C junction temperature - enabling high-efficiency load switching in portable electronics.
For engineers reviewing the PMV30UN datasheet, PMV30UN pinout, PMV30UN application, or PMV30UN equivalent, this page provides verified technical context, validated pin mapping, real-world application use cases, and confirmed alternative parts with documented parameter differences for battery management, USB power switches, and low-voltage DC-DC converter synchronous rectification.
Technical Context
The PMV30UN employs µTrenchMOS™ technology to achieve low gate charge (7.4 nC typical) and fast switching (td(on) = 7 ns, tf = 13 ns), optimized for high-frequency operation in compact DC-DC converters. Its 1.9 W total power dissipation at Tsp = 25 °C and 65 K/W junction-to-solder-point thermal resistance support thermally constrained PCB layouts.
It features a gate-source threshold voltage of 0.45–0.7 V at 25 °C, enabling direct drive from 1.8 V and 2.5 V logic, and maintains stable RDS(on) across −55 °C to +150 °C (44–63 mΩ at VGS = 1.8 V, ID = 1 A). The integrated source-drain diode supports bidirectional current flow with 0.81–1.2 V forward voltage at 1.7 A.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V maximum - supports 12 V and lower battery rails without derating. |
| RDS(on) | 30–36 mΩ max at VGS = 4.5 V, 25 °C - minimizes conduction loss in high-current load switches. |
| ID (DC) | 5.7 A at VGS = 4.5 V, Tsp = 25 °C - enables single-device handling of >5 A portable system loads. |
| Qg(tot) | 7.4 nC typical - reduces gate drive power and enables efficient 1–2 MHz switching in buck converters. |
| VGS(th) | 0.45–0.7 V at 25 °C - ensures reliable turn-on with 1.8 V microcontroller GPIOs. |
| Tj max | +150 °C - allows operation in sealed enclosures or near heat sources without external cooling. |
| Ciss | 460 pF typical - balances switching speed and EMI control in space-constrained designs. |
Pinout & Package
SOT23 (TO-236AB) plastic surface-mount package: 3-pin, 1.3 mm × 2.9 mm footprint, 1.1 mm height, gull-wing leads. Designed for automated placement and reflow soldering on dense PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Control terminal; accepts 0–8 V logic-level drive; 100 nA leakage at ±8 V ensures low standby current. |
| 2 | Source (S) | Reference node for gate drive; connects to ground or low-side return path; hosts body diode anode. |
| 3 | Drain (D) | Power output terminal; handles up to 23.1 A pulsed current; connects to load or power rail. |
Key Features
| Feature | Design Value |
|---|---|
| µTrenchMOS™ technology | Enables 36 mΩ RDS(on) in SOT23 - achieves performance comparable to larger packages without layout penalty. |
| Low VGS(th) | 0.45–0.7 V range ensures robust turn-on from 1.8 V/2.5 V logic - eliminates need for level shifters in modern MCU interfaces. |
| Fast switching | 7 ns turn-on delay + 13 ns fall time - supports >1 MHz DC-DC operation while maintaining efficiency and thermal stability. |
| Integrated body diode | 1.6 A continuous / 6.4 A pulsed source-drain diode - enables synchronous rectification and reverse-current protection without external components. |
| Thermal robustness | 65 K/W Rth(j-sp) - allows full 5.7 A current handling with minimal copper area, reducing PCB cost and size. |
Applications
| Battery Protection Circuit | USB Power Switch |
|---|---|
Use Scenario: Bidirectional overcurrent and short-circuit protection in Li-ion battery packs with cell monitoring ICs. IC Role / Device Role / Timing Role: Low-side load switch controlling battery discharge path; responds within microseconds to fault signals. Use Value: 36 mΩ RDS(on) limits voltage drop to <180 mV at 5 A, preserving battery runtime and enabling accurate current sensing. |
Use Scenario: Hot-swap power enable for USB Type-C ports in portable hubs and docking stations. IC Role / Device Role / Timing Role: High-side or low-side power gate; driven directly by USB controller GPIO with 1.8 V logic compatibility. Use Value: 0.45 V VGS(th) ensures reliable turn-on under brown-out conditions; 23.1 A peak current handles inrush surges. |
| DC-DC Synchronous Rectifier | Load Switch in Wearable Electronics |
Use Scenario: Secondary-side synchronous rectification in 3.3 V/5 V buck converters for wearables and IoT sensors. IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diode; driven by controller's complementary PWM signal. Use Value: 7.4 nC Qg and 13 ns fall time minimize switching losses at 2 MHz, improving efficiency by >3% vs. diode solution. |
Use Scenario: Controlled power sequencing for BLE SoCs and display drivers in smartwatches and fitness trackers. IC Role / Device Role / Timing Role: Low-quiescent-current load switch enabling <1 µA off-state leakage and fast wake-up response. Use Value: 1 µA max IDSS at 25 °C and 100 µA at 150 °C ensures multi-week shelf life and reliable cold-start behavior. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2004LK-7 | RDS(on) = 42 mΩ min at VGS = 4.5 V; higher Qg = 9.5 nC; same SOT23 package. | Slightly lower current capability (5.0 A vs. 5.7 A); less suitable for 5 A continuous battery discharge paths. | Prefer PMV30UN where <36 mΩ RDS(on) and sub-8 nC Qg are critical for thermal or efficiency margins. |
| AO3400 | RDS(on) = 28 mΩ typ at VGS = 10 V but 45 mΩ at VGS = 4.5 V; VGS(th) = 0.8–1.5 V - requires ≥2.5 V logic for guaranteed turn-on. | Not compatible with 1.8 V GPIO; higher threshold increases risk of partial turn-on and heating in low-voltage systems. | Choose PMV30UN for 1.8 V–2.5 V drive compatibility and tighter VGS(th) distribution in battery-sensitive designs. |
Compared with DMN2004LK-7 and AO3400, the PMV30UN offers the lowest verified RDS(on) at 4.5 V among SOT23 N-channel MOSFETs with sub-0.7 V VGS(th), making it optimal for thermally constrained, low-voltage portable power switches where gate drive margin and conduction loss are co-critical.
Availability
PMV30UN is available at Aetrix Electronics and suitable for battery management systems, USB power delivery modules, and wearable electronics requiring stable component supply with long-term lifecycle assurance.
Supply support for PMV30UN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products division, with deep expertise in automotive, industrial, and consumer power solutions.
The PMV30UN belongs to Nexperia's µTrenchMOS™ logic-level MOSFET family, engineered specifically for high-efficiency, low-voltage load switching in space- and power-constrained portable electronics.
FAQ
What is the maximum continuous drain current for PMV30UN at 100 °C solder point temperature?
The PMV30UN supports 3.65 A continuous drain current at Tsp = 100 °C and VGS = 4.5 V, as specified in Table 2 of the datasheet. This derated value reflects thermal limitations of the SOT23 package and must be used for thermal design validation in enclosed or high-ambient environments. The PMV30UN datasheet confirms this rating applies under steady-state DC conditions with proper PCB copper area.
Does PMV30UN support 1.8 V logic-level gate drive?
Yes, the PMV30UN has a gate-source threshold voltage (VGS(th)) of 0.45–0.7 V at 25 °C, ensuring full enhancement with 1.8 V drive. At 150 °C, VGS(th) drops to 0.25–0.4 V, further guaranteeing turn-on margin. The PMV30UN datasheet Figure 9 and Table 4 confirm this behavior across temperature, making it suitable for direct interface with 1.8 V microcontrollers without level shifting.
What is the safe operating area (SOA) limitation for PMV30UN at 10 V VDS?
At VDS = 10 V, the PMV30UN's SOA (Figure 3) permits up to ~4.5 A continuous drain current at DC, decreasing to ~12 A for 10 ms pulses and ~23 A for 10 µs pulses. These boundaries are defined by thermal and avalanche limits, not just RDS(on). The PMV30UN datasheet Figure 3 explicitly plots these curves, and designers must respect them to avoid secondary breakdown during transient overload events.
Is PMV30UN pin-compatible with other SOT23 N-channel MOSFETs like PMV20XNR?
No - the PMV30UN uses standard SOT23 pinout (G-S-D on pins 1-2-3), but pin compatibility alone does not guarantee functional equivalence. The PMV20XNR has different RDS(on), VGS(th), and thermal characteristics; substituting without validation risks thermal runaway or insufficient drive. The PMV30UN datasheet specifies its unique µTrenchMOS™ parameters, and cross-references must be verified per application requirements.
What is the typical gate-drain (Miller) charge Qgd for PMV30UN?
The PMV30UN has a typical gate-drain (Miller) charge Qgd of 1.8 nC, measured at ID = 5 A, VDD = 10 V, and VGS = 4.5 V (Table 4). This value directly impacts switching transition time and EMI generation during hard-switching. The PMV30UN datasheet Figure 13 shows the VGS-vs-QG curve, confirming the Miller plateau region aligns with this Qgd specification.
PMV30UN,215 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 36mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id:
- 700mV @ 1mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs:
- 7.4 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 460 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.9W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23 (TO-236AB)
PMV30UN,215 FAQ
1.How can I place an order for PMV30UN,215 through Aetrix?
Please submit a Request for Quotation (RFQ) for PMV30UN,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMV30UN,215 reliable?
The price and inventory of PMV30UN,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMV30UN,215 is usually 5 days.
3.What payment methods are accepted for PMV30UN,215?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMV30UN,215 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMV30UN,215?
PMV30UN,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMV30UN,215 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMV30UN,215?
For technical support, including PMV30UN,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMV30UN,215 requirements.
6.How does Aetrix verify that PMV30UN,215 is sourced from the original manufacturer or authorized distributors?
All PMV30UN,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMV30UN,215 meets industry standards.
7.What is the process for return or replacement of PMV30UN,215?
All PMV30UN,215 units undergo pre-shipment inspection (PSI). If there is an issue with PMV30UN,215, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMV30UN,215 part is unused and in its original packaging.
Return procedure for PMV30UN,215:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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