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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

NXP Semiconductors PMV30XN,215

Name: PMV30XN,215
Brand: NXP Semiconductors
SKU: PMV30XN,215
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PMV30XN,215

Manufacturer:: NXP Semiconductors

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: PMV30XN,215.pdf

Description:: MOSFET N-CH 20V 3.2A TO236AB

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Product details

Overview

PMV30XN from Nexperia is a 20 V, 3.2 A N-channel enhancement-mode Trench MOSFET in SOT23 (TO-236AB) package, optimized for low-threshold, high-speed switching in low-side loadswitch and relay driver circuits. It delivers R_DS(on) = 28 mΩ (typ) at V_GS = 4.5 V and T_j = 25 °C, with fast turn-on delay (11 ns) and rise time (28 ns), enabling efficient power control in space-constrained portable and industrial applications.

For engineers reviewing the PMV30XN datasheet, PMV30XN pinout, PMV30XN application, or PMV30XN equivalent, key selection criteria include its 20 V V_DS, 3.2 A continuous drain current at 25 °C, low 1 V typical gate threshold, 420 pF input capacitance, and thermal resistance of 208 K/W (junction-to-ambient, with 6 cm² drain pad).

Technical Context

This N-channel MOSFET uses Trench MOSFET technology to achieve low R_DS(on) and fast switching performance. Its gate threshold voltage range (0.5–1.5 V) enables direct drive from 1.8 V and 2.5 V logic, while sub-threshold conduction is tightly controlled for stable operation across temperature.

The device features a built-in source-drain diode with V_SD = 0.67 V (typ) at I_S = 0.6 A, supporting bidirectional current handling in certain switching topologies. Dynamic parameters-including Q_G(tot) = 4.9 nC (typ), Q_GD = 2.9 nC (typ), and C_iss/C_oss/C_rss = 420/125/73 pF-support predictable gate drive design and EMI management in high-frequency switching circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum drain-source blocking voltage; defines safe operating range in 12 V and lower systems.
I_D (continuous)	3.2 A at T_amb = 25 °C - Sustained load current capability with standard FR4 PCB mounting (6 cm² drain pad).
R_DS(on)	28 mΩ (typ) at V_GS = 4.5 V, I_D = 3.2 A, T_j = 25 °C - Low conduction loss enabling <100 mW dissipation at 2 A load.
V_GS(th)	1 V (typ) - Enables reliable turn-on with 1.8 V and 2.5 V microcontroller GPIOs without level-shifting.
Q_G(tot)	4.9 nC (typ) - Low total gate charge reduces required gate drive current and switching losses in PWM applications.
t_d(on)/t_r	11 ns / 28 ns - Fast turn-on timing supports >10 MHz switching in digital load-switching and line-driver designs.
C_iss	420 pF - Input capacitance value used to calculate gate drive impedance and RC time constant for timing control.

Pinout & Package

SOT23 (TO-236AB) plastic surface-mounted package with 3 leads; compact 2.9 mm × 1.3 mm footprint, 1.1 mm max height, and tin-plated terminations compatible with standard reflow and wave soldering processes.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts logic-level voltages (0–12 V); low 100 nA leakage ensures stable biasing.
2 (S)	Source	Reference node for gate drive; tied to system ground in low-side switch configurations.
3 (D)	Drain	High-current output terminal; thermally connected to large copper pad (6 cm² recommended) for heat dissipation.

Key Features

Feature	Design Value
Low threshold voltage	V_GS(th) = 1 V (typ) enables direct interface with 1.8 V/2.5 V MCUs and eliminates need for gate drivers in many portable designs.
Very fast switching	t_d(on) = 11 ns and t_r = 28 ns support high-frequency PWM and digital signal routing with minimal propagation delay.
Trench MOSFET technology	Delivers 28 mΩ R_DS(on) in SOT23 - 30% lower on-resistance than planar equivalents at same voltage rating and package size.
Optimized dynamic capacitances	C_rss/C_iss ratio of ~0.17 improves Miller immunity and reduces risk of spurious turn-on during high dv/dt events.
Robust thermal performance	R_th(j-a) = 208 K/W (with 6 cm² drain pad) allows 3.2 A operation at ambient up to 70 °C without forced cooling.

Applications

Relay Driver	High-Speed Line Driver
Use Scenario: Replacing mechanical relays in PLC I/O modules and automotive body control units where cycle life and response time are critical. IC Role / Device Role / Timing Role: Low-side switch controlling coil current; operates in saturated mode with <100 ns total switching time. Use Value: Eliminates contact wear and bounce; enables 10× faster actuation vs. electromechanical relays while reducing board area by 70%.	Use Scenario: Driving terminated 50 Ω transmission lines in USB 2.0 data switches and industrial fieldbus repeaters. IC Role / Device Role / Timing Role: Active termination switch toggling between high-Z and 50 Ω match states under digital control. Use Value: Achieves <15 ns edge fidelity with <0.5 dB insertion loss due to low R_DS(on) and minimal C_oss feedthrough.
Low-Side Load Switch	Switching Power Supply Sync Rectifier
Use Scenario: Hot-swap protection and sequencing in battery-powered medical sensors and IoT edge nodes. IC Role / Device Role / Timing Role: Controlled power path switch with soft-start via gate resistor; handles inrush currents up to 12.8 A peak. Use Value: Limits inrush to <100 mA/s ramp rate and provides fault isolation without external current-sense circuitry.	Use Scenario: Secondary-side synchronous rectification in 5 V/3 A isolated DC-DC converters for telecom power supplies. IC Role / Device Role / Timing Role: Unidirectional freewheeling switch replacing Schottky diode; driven by transformer-coupled gate signal. Use Value: Reduces conduction loss by 65% vs. 40 V Schottky, improving efficiency from 89% to 93% at full load.

Relay Driver

High-Speed Line Driver

Use Scenario: Replacing mechanical relays in PLC I/O modules and automotive body control units where cycle life and response time are critical.

IC Role / Device Role / Timing Role: Low-side switch controlling coil current; operates in saturated mode with <100 ns total switching time.

Use Value: Eliminates contact wear and bounce; enables 10× faster actuation vs. electromechanical relays while reducing board area by 70%.

Use Scenario: Driving terminated 50 Ω transmission lines in USB 2.0 data switches and industrial fieldbus repeaters.

IC Role / Device Role / Timing Role: Active termination switch toggling between high-Z and 50 Ω match states under digital control.

Use Value: Achieves <15 ns edge fidelity with <0.5 dB insertion loss due to low R_DS(on) and minimal C_oss feedthrough.

Low-Side Load Switch

Switching Power Supply Sync Rectifier

Use Scenario: Hot-swap protection and sequencing in battery-powered medical sensors and IoT edge nodes.

IC Role / Device Role / Timing Role: Controlled power path switch with soft-start via gate resistor; handles inrush currents up to 12.8 A peak.

Use Value: Limits inrush to <100 mA/s ramp rate and provides fault isolation without external current-sense circuitry.

Use Scenario: Secondary-side synchronous rectification in 5 V/3 A isolated DC-DC converters for telecom power supplies.

IC Role / Device Role / Timing Role: Unidirectional freewheeling switch replacing Schottky diode; driven by transformer-coupled gate signal.

Use Value: Reduces conduction loss by 65% vs. 40 V Schottky, improving efficiency from 89% to 93% at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LK-7	R_DS(on) = 32 mΩ (typ) at V_GS = 4.5 V; higher Q_G = 6.5 nC; SOT23-3 package identical.	Slightly slower switching (t_r = 35 ns); less suitable for >5 MHz PWM but adequate for relay driving.	Preferred when tighter V_GS(th) distribution (0.7–1.3 V) is required over absolute R_DS(on) minimum.
AO3400	R_DS(on) = 28 mΩ (typ) at V_GS = 10 V only; V_GS(th) = 1.4 V (min); SO-23 package with same pinout.	Requires ≥3.3 V gate drive for full performance; not logic-compatible with 1.8 V systems.	Select when existing 3.3 V/5 V gate drive infrastructure exists and 20 V rating suffices.

Compared with DMN2004LK-7 and AO3400, the PMV30XN offers the lowest V_GS(th) and best 4.5 V R_DS(on) among SOT23 N-channel 20 V MOSFETs, making it optimal for ultra-low-voltage logic interfacing and high-efficiency load switching where gate drive headroom is constrained.

Availability

PMV30XN is available at Aetrix Electronics and suitable for relay driver, high-speed line driver, and low-side loadswitch applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for industrial and medical electronics.

Supply support for PMV30XN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on automotive, industrial, computing, consumer, and wearable markets.

The PMV30XN belongs to Nexperia's TrenchMOS portfolio, engineered specifically for high-efficiency, low-voltage switching in space-constrained applications where logic-level drive and fast transient response are essential.

FAQ

What is the maximum continuous drain current for PMV30XN at 100 °C ambient temperature?

The PMV30XN supports 2.1 A continuous drain current at T_amb = 100 °C with standard FR4 PCB mounting (single-sided copper, tin-plated). This derating reflects thermal limits defined in Table 5 of the datasheet and assumes no additional heatsinking beyond the recommended 6 cm² drain pad.

Can PMV30XN be driven directly by a 1.8 V microcontroller GPIO?

Yes - the PMV30XN has a typical gate threshold voltage of 1 V and maximum of 1.5 V, allowing full enhancement at V_GS = 1.8 V. At this voltage, R_DS(on) rises to 39–60 mΩ (typ–max), still sufficient for ≤1 A loads with acceptable conduction loss.

What is the safe operating area (SOA) limitation for PMV30XN at DC operation?

At DC, the PMV30XN's SOA is limited by thermal constraints: maximum P_tot = 380 mW (T_amb = 25 °C, standard footprint) or 520 mW (T_amb = 25 °C, 6 cm² drain pad). Figure 3 confirms linear derating to zero power at T_j = 150 °C.

Does PMV30XN include an integrated body diode, and what is its forward voltage?

Yes - the PMV30XN integrates a source-drain body diode with V_SD = 0.67 V (typ) at I_S = 0.6 A and T_j = 25 °C. This diode supports freewheeling current in inductive loads and reverse-polarity protection in low-side configurations.

What is the thermal resistance from junction to solder point (R_th(j-sp)) for PMV30XN?

The PMV30XN has R_th(j-sp) = 60–70 K/W, measured from junction to solder point on FR4 PCB with standard footprint. This parameter is critical for estimating local temperature rise beneath the package during pulsed operation or when using localized thermal vias.

PMV30XN,215 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 3.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 35mOhm @ 3.2A, 4.5V

Vgs(th) (Max) @ Id:: 1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 7.4 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 420 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 380mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23 (TO-236AB)

PMV30XN,215 FAQ

1.How can I place an order for PMV30XN,215 through Aetrix?

Please submit a Request for Quotation (RFQ) for PMV30XN,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMV30XN,215 reliable?

The price and inventory of PMV30XN,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMV30XN,215 is usually 5 days.

3.What payment methods are accepted for PMV30XN,215?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMV30XN,215 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMV30XN,215?

PMV30XN,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMV30XN,215 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMV30XN,215?

For technical support, including PMV30XN,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMV30XN,215 requirements.

6.How does Aetrix verify that PMV30XN,215 is sourced from the original manufacturer or authorized distributors?

All PMV30XN,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMV30XN,215 meets industry standards.

7.What is the process for return or replacement of PMV30XN,215?

All PMV30XN,215 units undergo pre-shipment inspection (PSI). If there is an issue with PMV30XN,215, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMV30XN,215 part is unused and in its original packaging.

Return procedure for PMV30XN,215:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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