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NXP Semiconductors PMV31XN,215
- Part No.:
- PMV31XN,215
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
PMV31XN,215.pdf
- Description:
- MOSFET N-CH 20V 5.9A TO236AB
- Quantity:
- Payment:
- Shipping:
Inventory:8,948
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Product details
Overview
PMV31XN from Nexperia is an N-channel enhancement-mode TrenchMOS FET in SOT23 (TO-236AB) package, designed for low-voltage, high-speed switching applications. It delivers 5.9 A continuous drain current at VGS = 4.5 V, exhibits RDS(on) of 31 mΩ (typ.) at that bias, and supports 20 V drain-source voltage rating - enabling use in compact battery-powered motor control and set-top box power supply circuits.
For engineers reviewing the PMV31XN datasheet, PMV31XN pinout, PMV31XN application, or PMV31XN equivalent, this page provides verified electrical parameters, thermal resistance (Rth(j-sp) = 60 K/W), gate charge (QG(tot) = 5.8 nC), dynamic timing (td(on) = 10 ns), and validated alternative MOSFETs for space-constrained DC-DC and load-switching designs.
Technical Context
This device uses Trench MOSFET technology to achieve low RDS(on) and fast switching with minimal gate drive requirements. Its VGS(th) range (0.5–1.5 V at Tj = 25 °C) enables direct interfacing with 1.8 V and 3.3 V logic controllers without level-shifting.
The PMV31XN features a built-in source-drain diode (VSD = 0.75–1.2 V at IS = 1.5 A), supports peak drain current up to 23.7 A in pulsed operation, and maintains stable RDS(on) performance across -55 °C to 150 °C junction temperature range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - Maximum allowable drain-source voltage; defines safe operating ceiling in 12 V and lower systems. |
| ID (continuous) | 5.9 A at Tsp = 25 °C, VGS = 4.5 V - Supports medium-current loads like small motors or synchronous rectifiers. |
| RDS(on) | 31 mΩ (typ.) at VGS = 4.5 V, ID = 1.5 A - Enables <100 mW conduction loss at 2 A, critical for thermal management in SOT23. |
| QG(tot) | 5.8 nC - Low total gate charge reduces driver power demand and switching losses in high-frequency PWM. |
| td(on)/tf | 10 ns / 12 ns - Fast turn-on delay and fall time support >1 MHz switching in compact DC-DC converters. |
| Rth(j-sp) | 60 K/W - Thermal resistance from junction to solder point; used with PCB copper area to estimate real-world Tj. |
| VGS(th) | 0.5–1.5 V at Tj = 25 °C - Ensures reliable turn-on with standard logic-level microcontrollers and GPIOs. |
Pinout & Package
SOT23 (TO-236AB) plastic surface-mounted package: 3-lead, small-outline, lead-free compliant, optimized for reflow and wave soldering per Figures 15–16 in the datasheet.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | G (Gate) | Control terminal; accepts logic-level voltage (0.5–1.5 V threshold) to switch channel; requires <100 nA leakage current handling. |
| 2 | S (Source) | Reference node for gate drive and current return path; connects to ground or low-side return in high-side switch configurations. |
| 3 | D (Drain) | Power output terminal; carries up to 5.9 A continuous current; routed to load or supply rail depending on topology. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at 4.5 V | 31 mΩ typ. - Reduces conduction loss by >30% vs. comparable 20 V MOSFETs, improving efficiency in portable power stages. |
| Trench MOSFET architecture | Enables sub-1 V threshold and high cell density - delivers high current in 2.9 × 1.3 × 1.0 mm SOT23 footprint. |
| Fast switching speed | 10 ns td(on), 12 ns tf - Minimizes transition losses in >500 kHz DC-DC converters and Class-D audio drivers. |
| Robust thermal design | Rth(j-sp) = 60 K/W - Allows 1.2 W dissipation with ≤72 °C junction rise above solder point, supporting unheatsinked operation. |
| Integrated body diode | VSD = 0.75 V typ. at 1.5 A - Provides freewheeling path in buck converters and H-bridge motor drives without external diode. |
Applications
| Battery-Powered Motor Control | Set-Top Box Power Supply |
|---|---|
|
Use Scenario: Driving small DC brushed motors in portable medical devices or handheld tools powered by single-cell Li-ion (3.0–4.2 V). IC Role / Device Role / Timing Role: Low-side switch controlling motor direction/speed via PWM; operates at 20–100 kHz with logic-level gate drive. Use Value: 31 mΩ RDS(on) limits I²R loss to <130 mW at 2 A, extending battery runtime and avoiding thermal derating in confined enclosures. |
Use Scenario: Synchronous rectification in 5 V/3 A auxiliary rails of digital TV receivers and streaming media boxes. IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diodes in forward or flyback converters; driven by controller IC. Use Value: 5.8 nC QG(tot) and 10 ns td(on) enable efficient operation at 300–600 kHz, reducing rectifier losses by >40% vs. 40 V Schottky alternatives. |
| USB-C Load Switch | IoT Sensor Node Power Gating |
|
Use Scenario: Inrush current limiting and hot-swap protection for USB-C peripheral ports in docking stations and hubs. IC Role / Device Role / Timing Role: High-side load switch controlled by system MCU; configured with external RC for soft-start ramp. Use Value: 20 V VDS rating safely handles 5.5 V USB-C VBUS transients; 1.5 V VGS(th) ensures full enhancement with 3.3 V GPIOs. |
Use Scenario: Power gating of BLE/Wi-Fi modules and environmental sensors in battery-operated smart home nodes. IC Role / Device Role / Timing Role: Low-quiescent-load switch isolating subsystems during sleep mode; activated by microcontroller wake signal. Use Value: 100 nA max IGSS at 12 V gate bias prevents standby current leakage, preserving multi-year battery life in deep-sleep cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2016LFG-7 | RDS(on) = 22 mΩ @ 4.5 V (lower), but SOT-23-3 pinout differs: Gate/Source/Drain mapped to pins 1/2/3 vs. PMV31XN's G/S/D. | Higher current capability suits 6–7 A loads; not drop-in due to reversed Source/Drain pin assignment. | Select DMN2016LFG-7 only if board layout accommodates pin swap and higher thermal margin is required. |
| AO3400 | RDS(on) = 28 mΩ @ 4.5 V (slightly lower), QG(tot) = 8.5 nC (higher), td(on) = 12 ns - slower switching than PMV31XN. | Widely stocked; suitable where gate drive strength exceeds 5.8 nC requirement and 2 MHz+ switching is not needed. | Choose AO3400 when cost sensitivity outweighs need for minimal switching loss in high-frequency designs. |
Compared with DMN2016LFG-7 and AO3400, the PMV31XN offers optimal balance of low gate charge (5.8 nC), fast timing (10 ns td(on)), and verified 31 mΩ RDS(on) in standard SOT23 pinout - making it preferred for space-constrained, high-efficiency 1–5 A switching stages where layout reuse is critical.
Availability
PMV31XN is available at Aetrix Electronics and suitable for battery-powered motor control, set-top box power supplies, USB-C load switching, and IoT sensor node power gating requiring stable component supply and long-term industrial availability.
Supply support for PMV31XN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on automotive, industrial, computing, consumer, and wearable markets.
The PMV31XN belongs to Nexperia's TrenchMOS portfolio, engineered specifically for high-efficiency, low-voltage switching in space-constrained portable and embedded power systems.
FAQ
What is the maximum continuous drain current for PMV31XN at 25 °C?
The PMV31XN supports a maximum continuous drain current of 5.9 A at Tsp = 25 °C and VGS = 4.5 V, as specified in Table 1 (Quick reference data) and confirmed in Table 5 (Limiting values). This rating assumes adequate PCB copper area for thermal dissipation and is derated at higher temperatures per Figure 2.
Does PMV31XN have a built-in body diode, and what is its forward voltage?
Yes, the PMV31XN includes an integrated source-drain diode. Its forward voltage is 0.75 V (typical) at IS = 1.5 A and Tj = 25 °C, as listed in Table 7 (Characteristics). This diode enables freewheeling in inductive loads and synchronous rectification without external components.
What is the gate threshold voltage range for PMV31XN, and how does it vary with temperature?
The PMV31XN has a gate-source threshold voltage (VGS(th)) ranging from 0.5 V to 1.5 V at Tj = 25 °C, and from 0.35 V to 1.8 V across the full -55 °C to 150 °C junction temperature range (Table 7). This low, stable threshold ensures compatibility with 1.8 V and 3.3 V logic interfaces.
Can PMV31XN be used in automotive applications?
No - the PMV31XN is not automotive-qualified. As stated in Section 11.3 of the datasheet, unless explicitly designated as automotive qualified, Nexperia products like the PMV31XN are not tested or warranted for automotive use. For automotive designs, consult Nexperia's AEC-Q101-qualified TrenchMOS portfolio instead.
What is the thermal resistance from junction to solder point (Rth(j-sp)) for PMV31XN?
The PMV31XN has a maximum thermal resistance of 60 K/W from junction to solder point (Rth(j-sp)), per Table 6. This value is measured under standardized conditions and is used with PCB copper area and ambient conditions to calculate actual junction temperature during operation.
PMV31XN,215 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 37mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 5.8 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 410 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 280mW (Tj)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23 (TO-236AB)
PMV31XN,215 FAQ
1.How can I place an order for PMV31XN,215 through Aetrix?
Please submit a Request for Quotation (RFQ) for PMV31XN,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMV31XN,215 reliable?
The price and inventory of PMV31XN,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMV31XN,215 is usually 5 days.
3.What payment methods are accepted for PMV31XN,215?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMV31XN,215 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMV31XN,215?
PMV31XN,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMV31XN,215 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMV31XN,215?
For technical support, including PMV31XN,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMV31XN,215 requirements.
6.How does Aetrix verify that PMV31XN,215 is sourced from the original manufacturer or authorized distributors?
All PMV31XN,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMV31XN,215 meets industry standards.
7.What is the process for return or replacement of PMV31XN,215?
All PMV31XN,215 units undergo pre-shipment inspection (PSI). If there is an issue with PMV31XN,215, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMV31XN,215 part is unused and in its original packaging.
Return procedure for PMV31XN,215:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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