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NXP Semiconductors PMV40UN,215

Part No.:
PMV40UN,215
Manufacturer:
NXP Semiconductors
Category:
FETs, MOSFETs
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixPMV40UN,215.pdf
Description:
MOSFET N-CH 30V 4.9A TO236AB
Quantity:
Payment:
Payment
Shipping:
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Inventory:8,166

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Product details

Overview

PMV40UN from Nexperia is an N-channel enhancement-mode TrenchMOS™ power MOSFET in SOT23 package, designed for ultra-low-threshold switching in battery-powered systems. It delivers RDS(on) ≤ 47 mΩ at VGS = 4.5 V, supports continuous drain current up to 4.9 A at Tsp = 25 °C, and operates with VDS ≤ 30 V - enabling efficient load switching in portable power management circuits.

For engineers reviewing the PMV40UN datasheet, PMV40UN pinout, PMV40UN application, or PMV40UN equivalent, this page provides verified technical context, validated pin functions, real-world use cases in battery protection and high-speed logic-level switching, and confirmed alternative parts with documented parameter trade-offs.

Technical Context

This device uses TrenchMOS™ technology to achieve low gate threshold voltage (VGS(th) = 0.45–0.7 V at Tj = 25 °C) and stable RDS(on) across temperature - critical for direct GPIO-driven switching without level-shifting. Its 3-pin SOT23 footprint integrates gate, source, and drain with defined thermal path to solder point (Rth(j-sp) ≤ 65 K/W).

The PMV40UN features fast switching dynamics (td(on) = 6 ns, tf = 12 ns), low gate charge (Qg(tot) = 9.3 nC), and integrated body diode (VSD = 0.66–1.2 V at IS = 1.25 A), supporting synchronous rectification and reverse-current blocking in compact DC-DC and load-switch designs.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 30 V maximum - supports 24 V rail and 12 V automotive battery systems with margin.
RDS(on) 40–47 mΩ at VGS = 4.5 V, Tj = 25 °C - enables <100 mW conduction loss at 2 A load.
ID (continuous) 4.9 A at Tsp = 25 °C - suitable for medium-power load switches and motor drivers.
VGS(th) 0.45–0.7 V typical - compatible with 1.8 V/2.5 V/3.3 V logic outputs without gate driver.
Ptot 1.9 W at Tsp = 25 °C - requires minimal PCB copper area for thermal relief in SOT23 layout.
Qg(tot) 9.3 nC - reduces gate drive power and enables >1 MHz PWM operation with low-RG.
Ciss 445 pF - balances switching speed and EMI control in high-frequency load switching.

Pinout & Package

PMV40UN is housed in a plastic surface-mounted SOT23 (TO-236AB) package with 3 leads, optimized for automated assembly and thermal performance via solder-point conduction.

Pin/Terminal Circuit Role Design Meaning
1 (Gate) Control input terminal Accepts logic-level voltage (≥0.7 V) to fully enhance channel; low Ciss minimizes drive energy.
2 (Source) Reference node for gate drive and current return path Connected to system ground or low-side return; body diode anode - blocks reverse current when floating.
3 (Drain) Power output terminal Carries load current up to 4.9 A; connected to positive rail or switched load; thermal path routed through PCB copper.

Key Features

Feature Design Value
Ultra-low VGS(th) Enables direct interface with 1.8 V microcontrollers - eliminates level shifters in space-constrained IoT nodes.
TrenchMOS™ process Delivers 20% lower RDS(on) vs planar MOSFETs at same die size - improves power density in portable battery packs.
Low Qg/Qgd ratio Qgd/Qg ≈ 24% - reduces Miller-induced switching delay and improves hard-switching efficiency.
Integrated body diode VSD = 0.66 V typical at 1.25 A - supports bidirectional current handling in USB power delivery and hot-swap circuits.
SOT23 thermal design Rth(j-sp) ≤ 65 K/W - allows 1.9 W dissipation with <130 °C junction rise on 1-in² 2-oz copper pad.

Applications

Battery Protection Circuit USB Power Switch

Use Scenario: Reverse-polarity and overcurrent protection in single-cell Li-ion battery packs.

IC Role / Device Role / Timing Role: Low-side load switch controlling battery discharge path; activated by protection IC signal.

Use Value: Ultra-low VGS(th) ensures full turn-on from 2.8–4.2 V battery range; RDS(on) ≤ 47 mΩ limits voltage drop to <100 mV at 2 A.

Use Scenario: Hot-plug power enable for USB peripherals in portable hubs and docking stations.

IC Role / Device Role / Timing Role: High-speed, low-loss power gate between host VBUS and peripheral port.

Use Value: Fast tf = 12 ns and low Ciss suppress inrush transients; SOT23 footprint fits tight board spacing near USB connectors.

Logic-Level Motor Driver Load Switch for MCU I/O

Use Scenario: Driving small DC motors (e.g., cooling fans, vibration motors) in wearables and handheld devices.

IC Role / Device Role / Timing Role: N-channel low-side switch controlled directly by 3.3 V GPIO pins.

Use Value: VGS(th) ≤ 0.7 V guarantees full enhancement at 3.3 V; 4.9 A rating handles peak stall currents of 3 W motors.

Use Scenario: Enabling/disabling power to external sensors or RF modules under MCU software control.

IC Role / Device Role / Timing Role: Precision-controlled power gate with minimal leakage (IDSS ≤ 1 µA at 25 °C).

Use Value: Low IDSS and high VGS = ±8 V rating prevent false turn-on during sleep modes; 1.9 W Ptot supports sustained 100 mA loads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-threshold MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN2004LK-7 RDS(on) = 32 mΩ @ VGS = 4.5 V; higher Qg = 12.5 nC; SOT23-3 package. Better conduction loss but slower switching; suited for static load switching over PWM. Select DMN2004LK-7 when minimizing I²R loss dominates over switching frequency requirements.
AO3400 RDS(on) = 28 mΩ @ VGS = 10 V; VGS(th) = 0.7–1.4 V; higher threshold limits 1.8 V compatibility. Requires ≥2.5 V gate drive for reliable turn-on; less suitable for ultra-low-voltage MCUs. Choose AO3400 only if system uses ≥3.3 V GPIO and prioritizes lowest RDS(on) over logic-level compatibility.

Compared with DMN2004LK-7 and AO3400, the PMV40UN uniquely balances sub-1 V threshold, 47 mΩ RDS(on), and 9.3 nC gate charge - making it optimal for battery-powered systems where both low-voltage drive and moderate switching speed are required.

Availability

PMV40UN is available at Aetrix Electronics and suitable for battery management, USB power switching, and logic-level motor control applications requiring stable component supply and long-term industrial availability.

Supply support for PMV40UN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP's Standard Products division in 2017 and focused on automotive, industrial, computing, and consumer markets.

The PMV40UN belongs to Nexperia's TrenchMOS™ ultra-low-threshold FET product line, engineered specifically for direct GPIO-driven power switching in space- and voltage-constrained portable electronics.

FAQ

What is the maximum continuous drain current for PMV40UN at 100 °C solder point temperature?

The PMV40UN supports a continuous drain current of 3.1 A at Tsp = 100 °C and VGS = 4.5 V, as specified in Table 3 of the official datasheet. This derating reflects thermal limitations of the SOT23 package and must be accounted for in thermally constrained layouts. Designers should verify junction temperature using Rth(j-sp) = 65 K/W and actual power dissipation to ensure safe operation of the PMV40UN.

Does PMV40UN have a built-in body diode, and what is its forward voltage?

Yes, the PMV40UN includes an integrated source-drain body diode with a typical forward voltage (VSD) of 0.66 V at IS = 1.25 A and Tj = 25 °C. The datasheet confirms VSD ranges from 0.66 V to 1.2 V depending on current and temperature. This diode enables freewheeling in inductive loads and reverse-current blocking in battery backup paths - a key feature leveraged in PMV40UN-based load-switch and hot-swap designs.

Can PMV40UN be driven directly by a 1.8 V microcontroller GPIO pin?

Yes, the PMV40UN can be driven directly by a 1.8 V GPIO because its gate-source threshold voltage (VGS(th)) is specified at 0.45–0.7 V typical at Tj = 25 °C, well below 1.8 V. At VGS = 1.8 V and ID = 1 A, RDS(on) is 55–73 mΩ - sufficient for many low-power switching tasks. However, designers should confirm actual RDS(on) at operating temperature and load current using Figure 7 in the PMV40UN datasheet.

What is the thermal resistance from junction to solder point (Rth(j-sp)) for PMV40UN?

The PMV40UN has a maximum thermal resistance from junction to solder point (Rth(j-sp)) of 65 K/W, per Table 4 in the datasheet. This value applies under standard SOT23 mounting conditions and is used to calculate junction temperature rise above solder point temperature: ΔTj = Pdiss × Rth(j-sp). For example, at 1 W dissipation, the junction rises ~65 °C above the PCB solder point - a critical parameter for reliability validation of the PMV40UN in thermally dense layouts.

Is PMV40UN RoHS compliant and halogen-free?

Yes, the PMV40UN is RoHS compliant and halogen-free, consistent with Nexperia's standard environmental policy for all active components manufactured after 2006. The original Philips/NXP documentation predates full RoHS enforcement, but Nexperia's current product specifications and material declarations confirm compliance for PMV40UN in SOT23 packaging. Full substance declarations and test reports for the PMV40UN are available upon request from Aetrix Electronics' quality team.

PMV40UN,215 Specifications

Product attributes
Attribute value
Manufacturer:
NXP Semiconductors
Series:
TrenchMOS™
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
4.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Rds On (Max) @ Id, Vgs:
47mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id:
700mV @ 1mA (Typ)
Gate Charge (Qg) (Max) @ Vgs:
9.3 nC @ 4.5 V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
445 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
1.9W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23 (TO-236AB)

PMV40UN,215 FAQ

1.How can I place an order for PMV40UN,215 through Aetrix?

Please submit a Request for Quotation (RFQ) for PMV40UN,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMV40UN,215 reliable?

The price and inventory of PMV40UN,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMV40UN,215 is usually 5 days.

3.What payment methods are accepted for PMV40UN,215?

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Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMV40UN,215?

PMV40UN,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMV40UN,215 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMV40UN,215?

For technical support, including PMV40UN,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMV40UN,215 requirements.

6.How does Aetrix verify that PMV40UN,215 is sourced from the original manufacturer or authorized distributors?

All PMV40UN,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMV40UN,215 meets industry standards.

7.What is the process for return or replacement of PMV40UN,215?

All PMV40UN,215 units undergo pre-shipment inspection (PSI). If there is an issue with PMV40UN,215, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMV40UN,215 part is unused and in its original packaging.

Return procedure for PMV40UN,215:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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