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NXP Semiconductors PMV45EN,215
- Part No.:
- PMV45EN,215
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
PMV45EN,215.pdf
- Description:
- MOSFET N-CH 30V 5.4A TO236AB
- Quantity:
- Payment:
- Shipping:
Inventory:7,730
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Product details
Overview
PMV45EN,215 from Nexperia is a logic-level N-channel enhancement-mode TrenchMOS FET in SOT23 (TO-236AB) package, rated for 30 V VDS, 5.4 A continuous drain current at 25 °C, and 35 mΩ RDS(on) at VGS = 10 V and ID = 2 A. It serves as a high-speed load switch in battery management and power rail control circuits.
For engineers reviewing the PMV45EN,215 datasheet, PMV45EN,215 pinout, PMV45EN,215 application, or PMV45EN,215 equivalent, this discrete MOSFET offers verified logic-level gate drive compatibility down to 4.5 V, fast switching with 5 ns turn-on delay and 5.5 ns fall time, and thermal resistance of 60 K/W from junction to solder point - critical for compact DC-DC and portable power designs.
Technical Context
This N-channel MOSFET uses TrenchMOS technology to achieve low on-resistance and fast dynamic performance. Its gate threshold voltage ranges from 0.6 V (at 150 °C) to 2.2 V (at −55 °C), enabling reliable turn-on with standard 3.3 V or 5 V logic drivers.
It features a built-in source-drain diode with 0.79 V forward voltage at 1.5 A and 25 °C, and supports peak pulsed drain current up to 21.6 A. The device operates across −55 °C to +150 °C junction temperature and is qualified for industrial and computing applications - not automotive.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - maximum drain-source blocking voltage; suitable for 24 V nominal systems with margin. |
| ID (continuous) | 5.4 A at Tsp = 25 °C - usable for medium-power load switching without forced cooling. |
| RDS(on) | 35 mΩ typ. at VGS = 10 V, ID = 2 A, Tj = 25 °C - enables <175 mW conduction loss at 2 A. |
| QG(tot) | 9.4 nC - low total gate charge supports efficient 1–2 MHz switching in synchronous buck stages. |
| td(on)/tf | 5 ns / 5.5 ns - fast edge transitions reduce switching losses and EMI in high-frequency SMPS. |
| Rth(j-sp) | 60 K/W - thermal resistance from junction to solder point; requires adequate PCB copper area for thermal management. |
| VGS(th) | 1.5 V typ. at 25 °C - ensures robust turn-on with 3.3 V microcontroller GPIOs. |
Pinout & Package
SOT23 (TO-236AB) plastic surface-mounted package with 3 leads; footprint compatible with JEDEC TO-236AB standard; body dimensions 2.9 mm × 1.3 mm × 1.0 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | G (Gate) | Control terminal; accepts logic-level input (≤20 V absolute max); low QG enables direct MCU drive. |
| 2 | S (Source) | Reference node for gate drive and current return path; tied to system ground or low-side return in high-side configurations. |
| 3 | D (Drain) | Power output terminal; connects to load or supply rail; handles up to 30 V and 5.4 A continuous current. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Turns fully on with VGS ≥ 4.5 V - eliminates need for gate driver IC in 3.3 V/5 V systems. |
| TrenchMOS architecture | Delivers 35 mΩ RDS(on) in SOT23 - highest power density among comparable 30 V logic-FETs in this package. |
| Fast switching | 5 ns td(on), 5.5 ns tf - reduces transition losses in PWM-based power control above 500 kHz. |
| Integrated body diode | VSD = 0.79 V at 1.5 A - supports freewheeling in inductive loads without external diode. |
| Wide temperature range | −55 °C to +150 °C operation - validated for industrial ambient environments and reflow-soldered PCBs. |
Applications
| Battery Protection Circuit | USB Power Switch |
|---|---|
Use Scenario: Reverse-current blocking and overcurrent cutoff in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: Low-side load switch controlling battery discharge path; activated by protection IC signal. Use Value: 35 mΩ RDS(on) limits voltage drop to <70 mV at 2 A, preserving battery runtime and thermal headroom. |
Use Scenario: Hot-swap enable/disable for USB 2.0/3.0 downstream ports in docking stations. IC Role / Device Role / Timing Role: High-side power switch isolating VBUS during insertion/removal events. Use Value: 5.4 A rating and 21.6 A pulsed capability handle inrush currents without latch-up or thermal shutdown. |
| DC-DC Converter Synchronous Rectifier | LED Driver Current Switch |
Use Scenario: Low-side synchronous rectification in 12 V input, 3.3 V/5 V output buck converters. IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diode to improve efficiency at light-to-moderate loads. Use Value: 9.4 nC QG(tot) and 5.5 ns tf minimize gate drive loss and dead-time conduction loss. |
Use Scenario: PWM-controlled current sink for high-brightness LED strings in portable lighting. IC Role / Device Role / Timing Role: Constant-current switch modulated at 1–10 kHz to regulate luminance. Use Value: 0.79 V VSD and 1.7 A continuous source current support stable LED bias without external flyback diode. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3025LSD-13 | 30 V, 4.5 A, 25 mΩ RDS(on) at VGS = 10 V; SO-8 package (dual N-channel). | Higher current density but larger footprint; dual configuration enables half-bridge use. | Select when board space allows SO-8 and dual-FET topology is needed; not pin-compatible with PMV45EN,215. |
| AO3400 | 30 V, 5.7 A, 42 mΩ RDS(on) at VGS = 10 V; same SOT23 package and pinout. | Higher RDS(on) increases conduction loss by ~20 % at 2 A; otherwise functionally interchangeable. | Acceptable alternative if 42 mΩ is acceptable; identical pinout and footprint enable drop-in replacement in existing layouts. |
Compared with DMN3025LSD-13 and AO3400, the PMV45EN,215 delivers optimal balance of low RDS(on), fast switching, and minimal SOT23 footprint - making it preferred for space-constrained, high-efficiency battery-powered systems where thermal resistance and gate charge are design-critical.
Availability
PMV45EN,215 is available at Aetrix Electronics and suitable for battery management, USB power delivery, and DC-DC converter applications requiring stable component supply, consistent parametric performance, and long-term industrial-grade availability.
Supply support for PMV45EN,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on high-volume, high-reliability components for computing, industrial, consumer, and communications markets.
The PMV45EN,215 belongs to Nexperia's TrenchMOS logic-level FET product line, engineered specifically for compact, efficient power switching in space- and thermally constrained applications - emphasizing low gate charge, fast switching, and robust industrial qualification.
FAQ
What is the maximum continuous drain current rating for PMV45EN,215 at 100 °C solder point temperature?
The PMV45EN,215 supports 3.4 A continuous drain current at Tsp = 100 °C, as specified in Table 5 (Limiting values). This derating reflects thermal constraints of the SOT23 package and must be applied when ambient or PCB thermal conditions limit heat dissipation. At 25 °C, the rating rises to 5.4 A.
Does PMV45EN,215 have a guaranteed gate threshold voltage range across temperature?
Yes - the PMV45EN,215 has a specified VGS(th) range of 0.6 V to 2.2 V across its full operating junction temperature range (−55 °C to +150 °C), with typical value 1.5 V at 25 °C. This ensures reliable turn-on with 3.3 V logic even under worst-case high-temperature conditions.
Can PMV45EN,215 be used in high-side switching configurations?
Yes - the PMV45EN,215 is an N-channel MOSFET and can be used in high-side switching when paired with a gate driver capable of providing VGS ≥ 4.5 V above the drain potential. Its 20 V maximum VGS rating and 30 V VDS support bootstrap or charge-pump based high-side drive in DC-DC topologies.
What is the thermal resistance from junction to solder point (Rth(j-sp)) for PMV45EN,215?
The PMV45EN,215 has a maximum Rth(j-sp) of 60 K/W, as stated in Table 6. This parameter measures thermal resistance between the silicon junction and the PCB solder point, and is critical for estimating junction temperature rise under steady-state power dissipation in real-world PCB layouts.
Is PMV45EN,215 qualified for automotive applications?
No - the PMV45EN,215 is explicitly designed and qualified for computing, communications, consumer, and industrial applications only. It is not AEC-Q101 qualified, and the datasheet states that non-automotive qualified products are unsuitable for automotive use without additional validation by the customer.
PMV45EN,215 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 42mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 9.4 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 350 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 280mW (Tj)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23 (TO-236AB)
PMV45EN,215 FAQ
1.How can I place an order for PMV45EN,215 through Aetrix?
Please submit a Request for Quotation (RFQ) for PMV45EN,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMV45EN,215 reliable?
The price and inventory of PMV45EN,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMV45EN,215 is usually 5 days.
3.What payment methods are accepted for PMV45EN,215?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMV45EN,215 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMV45EN,215?
PMV45EN,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMV45EN,215 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMV45EN,215?
For technical support, including PMV45EN,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMV45EN,215 requirements.
6.How does Aetrix verify that PMV45EN,215 is sourced from the original manufacturer or authorized distributors?
All PMV45EN,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMV45EN,215 meets industry standards.
7.What is the process for return or replacement of PMV45EN,215?
All PMV45EN,215 units undergo pre-shipment inspection (PSI). If there is an issue with PMV45EN,215, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMV45EN,215 part is unused and in its original packaging.
Return procedure for PMV45EN,215:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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