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Nexperia USA Inc. PMV45EN2VL

Part No.:
PMV45EN2VL
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixPMV45EN2VL.pdf
Description:
MOSFET N-CH 30V 5.1A TO236AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,659

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Product details

Overview

PMV45EN2VL from Nexperia is a 30 V, N-channel enhancement-mode Trench MOSFET in SOT23 (TO-236AB) package, designed for low-side switching with RDS(on) = 35 mΩ @ VGS = 10 V, ID = 4.1 A, and Ptot = 1115 mW on FR4 PCB. It serves as a logic-level-compatible high-speed load switch in compact power interfaces.

For engineers reviewing the PMV45EN2VL datasheet, PMV45EN2VL pinout, PMV45EN2VL application, or PMV45EN2VL equivalent, key selection criteria include gate threshold voltage (1.5 V typ), fast switching (tr = 12 ns, tf = 2 ns), thermal resistance (Rth(j-a) = 209 K/W), drain-source breakdown (30 V), and SOT23 footprint compatibility.

Technical Context

This discrete N-channel MOSFET uses Trench technology to achieve low on-resistance and fast switching performance at logic-level gate drive (VGS(th) = 1.5 V typ). Its gate charge profile (QG(tot) = 3.6–6.3 nC) and capacitance values (Ciss = 209 pF, Coss = 50 pF) support efficient high-frequency operation in DC-DC and load-switching topologies.

The device operates across –55 °C to 150 °C junction temperature, with normalized RDS(on) increasing to 1.7× at Tj = 150 °C. Its safe operating area (SOA) supports peak drain current of 16 A (10 µs pulse) and continuous ID up to 4.1 A at 25 °C ambient on standard FR4 layout.

Key Specifications

ParameterValue and Actual Design Meaning
VDS30 V maximum - defines maximum blocking voltage in low-side switch applications
RDS(on)35 mΩ typ @ VGS = 10 V, ID = 4.1 A - enables <170 mW conduction loss at 4 A
VGS(th)1.5 V typ - ensures reliable turn-on with 3.3 V or 5 V logic-level drivers
tr/tf12 ns / 2 ns - supports >10 MHz switching in optimized gate-drive layouts
Ptot1115 mW @ Tamb = 25 °C on 6 cm² FR4 copper pad - sets practical continuous power handling limit
QG(tot)3.6–6.3 nC - determines gate driver current requirement (~0.6 mA avg @ 100 kHz)
Ciss209 pF - influences high-frequency input impedance and EMI filtering needs

Pinout & Package

SOT23 (TO-236AB) plastic surface-mounted package: 3-pin, single-sided FR4-mountable, 2.9 mm × 1.3 mm footprint, 1.1 mm height, tin-plated terminations.

Pin/TerminalCircuit RoleDesign Meaning
1 (G)GateControl terminal; requires ≤20 V drive; 2.3 Ω internal gate resistance limits ringing
2 (S)SourceReference node for gate drive; connects to system ground in low-side configuration
3 (D)DrainPower output terminal; soldered to 6 cm² copper pad for thermal management

Key Features

FeatureDesign Value
Logic-level gate driveVGS(th) = 1.5 V typ enables direct interface with 3.3 V microcontrollers without level shifters
Enhanced thermal dissipation1115 mW Ptot on FR4 exceeds typical SOT23 limits by >2× via optimized drain pad layout
Trench MOSFET architectureReduces RDS(on) × QG figure-of-merit to 126 mΩ·nC, improving switching efficiency
Fast switching speed12 ns rise + 2 ns fall time minimizes transition losses in PWM frequencies up to 2 MHz

Applications

Relay DriverHigh-Speed Line Driver

Use Scenario: Replaces mechanical relay in PLC I/O modules requiring 100 k-cycle lifetime and <10 ms response.

IC Role / Device Role / Timing Role: Low-side switch controlling 24 V DC coil with 50 mA hold current.

Use Value: Eliminates contact wear and bounce; achieves 5 ms turn-on/turn-off with 3.3 V GPIO control.

Use Scenario: Drives 50 Ω transmission line in industrial fieldbus nodes (e.g., RS-485 fail-safe bias).

IC Role / Device Role / Timing Role: Active pull-down element enabling fast signal edge rates and bus contention resolution.

Use Value: 12 ns rise time ensures <5% signal distortion at 10 Mbps over 10 m cable.

Low-Side Load SwitchSwitching Power Supply

Use Scenario: Enables/disables 5 V rail to peripheral sensors in battery-powered IoT nodes.

IC Role / Device Role / Timing Role: Controlled power path switch with reverse-current blocking and minimal quiescent loss.

Use Value: 1 µA IDSS leakage preserves battery life; 35 mΩ RDS(on) adds <0.1 V drop at 2 A load.

Use Scenario: Synchronous rectifier in 30 V input, 5 V output buck converter for embedded power rails.

IC Role / Device Role / Timing Role: Secondary-side switch replacing Schottky diode to reduce conduction loss.

Use Value: 35 mΩ RDS(on) cuts rectifier loss by 65% vs. 0.4 V diode at 3 A, improving efficiency by 2.1%.

Availability

PMV45EN2VL is available at Aetrix Electronics and suitable for relay drivers, high-speed line drivers, low-side load switches, and synchronous rectifier circuits requiring stable component supply in high-volume industrial and consumer electronics production.

Supply support for PMV45EN2VL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions, headquartered in Nijmegen, Netherlands.

The PMV series targets space-constrained, cost-sensitive power switching applications, emphasizing logic-level drivability, thermal robustness in small packages, and fast transient response for industrial and computing power management.

FAQ

What is the maximum continuous drain current for PMV45EN2VL at 100 °C ambient?

The maximum continuous drain current is 2.6 A at Tamb = 100 °C with VGS = 10 V, per Absolute Maximum Ratings Table 5. This derating reflects thermal limits of the SOT23 package on standard FR4 PCB, where junction temperature must remain ≤150 °C.

Does PMV45EN2VL have integrated gate protection?

No, PMV45EN2VL does not include integrated gate protection diodes or Zener clamps. External gate-source Zener (≤20 V) is recommended if VGS transients exceed ±20 V, as specified in Absolute Maximum Ratings. Gate oxide reliability depends on controlled drive circuitry.

Can PMV45EN2VL be used in avalanche-rated applications?

No, PMV45EN2VL is not characterized or guaranteed for repetitive avalanche operation. The datasheet specifies only unclamped inductive switching (UIS) capability via SOA curves, and no EAS rating is provided. It must be operated within SOA boundaries using external snubbers or clamping.

What is the source-drain diode forward voltage at 1 A?

The source-drain diode forward voltage is 0.8–1.2 V at IS = 1 A and Tj = 25 °C, per Characteristics Table 7. This body diode enables freewheeling in inductive loads but exhibits higher VF than discrete Schottky diodes, limiting efficiency in high-frequency synchronous rectification.

PMV45EN2VL Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
TrenchMOS™
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
5.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
42mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
6.3 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
209 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
510mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-236AB

PMV45EN2VL FAQ

1.How can I place an order for PMV45EN2VL through Aetrix?

Please submit a Request for Quotation (RFQ) for PMV45EN2VL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMV45EN2VL reliable?

The price and inventory of PMV45EN2VL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMV45EN2VL is usually 5 days.

3.What payment methods are accepted for PMV45EN2VL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMV45EN2VL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMV45EN2VL?

PMV45EN2VL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMV45EN2VL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMV45EN2VL?

For technical support, including PMV45EN2VL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMV45EN2VL requirements.

6.How does Aetrix verify that PMV45EN2VL is sourced from the original manufacturer or authorized distributors?

All PMV45EN2VL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMV45EN2VL meets industry standards.

7.What is the process for return or replacement of PMV45EN2VL?

All PMV45EN2VL units undergo pre-shipment inspection (PSI). If there is an issue with PMV45EN2VL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMV45EN2VL part is unused and in its original packaging.

Return procedure for PMV45EN2VL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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