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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PMV48XP,215

Name: PMV48XP,215
Brand: Nexperia USA Inc.
SKU: PMV48XP,215
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PMV48XP,215

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: PMV48XP,215.pdf

Description:: MOSFET P-CH 20V 3.5A TO236AB

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Product details

Overview

PMV48XP,215 from Nexperia is a P-channel enhancement-mode Trench MOSFET in SOT23 (TO-236AB) package, rated for −20 V drain-source voltage, −3.5 A continuous drain current at 25 °C, and 48 mΩ typical R_DS(on) at V_GS = −4.5 V. It serves as a high-side load switch in compact DC/DC power rails and battery-powered systems requiring logic-level gate drive and fast switching.

For engineers reviewing the PMV48XP,215 datasheet, PMV48XP,215 pinout, PMV48XP,215 application, or PMV48XP,215 equivalent, this device is selected for low-voltage, high-efficiency P-channel switching where thermal resistance (R_th(j-a) = 117–135 K/W on FR4 with 6 cm² drain pad) and sub-10 ns turn-on delay support tight timing control in space-constrained designs.

Technical Context

This MOSFET uses Trench MOSFET technology to achieve low R_DS(on) and fast switching with logic-level compatibility (V_GS(th) = −0.75 to −1.25 V). Its gate threshold enables direct drive from 3.3 V microcontrollers without level-shifting.

The device features a built-in source-drain diode (V_SD = −0.82 to −1.2 V at I_S = −2.4 A), supports peak drain current up to −14 A (10 µs pulse), and maintains stable R_DS(on) across junction temperatures up to 150 °C (70–80 mΩ at T_j = 150 °C).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−20 V - Maximum blocking voltage for 12 V and 15 V rail applications with margin.
I_D (continuous)	−3.5 A at T_amb = 25 °C - Supports moderate-power load switching in handheld and IoT devices.
R_DS(on)	48 mΩ typ. at V_GS = −4.5 V, I_D = −2.4 A - Enables <100 mW conduction loss at 2 A, critical for thermal budget in SOT23.
Q_G(tot)	8.5–11 nC - Low gate charge allows fast switching with minimal driver strength (e.g., GPIO-driven).
t_d(on)/t_f	11 ns / 23 ns - Supports >10 MHz PWM operation in synchronous buck high-side or LED dimming circuits.
V_GS(th)	−0.75 to −1.25 V - Ensures reliable turn-on with 3.3 V logic, eliminating need for external gate pull-up or level shifter.

Pinout & Package

SOT23 (TO-236AB) plastic surface-mounted package with 3 leads; standard footprint optimized for reflow soldering on FR4 PCBs with tin-plated copper layers.

Pin/Terminal	Circuit Role	Design Meaning
1	G (Gate)	Control terminal; accepts logic-level input (−12 V to +12 V rating); low capacitance (C_iss = 1000 pF) minimizes drive energy.
2	S (Source)	Reference node for gate drive; connected to system V_CC in high-side configuration; hosts internal body diode anode.
3	D (Drain)	Power output terminal; thermally coupled to PCB mounting pad (6 cm² recommended); carries full load current and handles −14 A surge.

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) ≤ −1.25 V ensures full enhancement with 3.3 V MCU outputs-no level shifter required.
Trench MOSFET architecture	Delivers 48 mΩ R_DS(on) in SOT23-2× lower than planar equivalents at same voltage rating.
Fast switching performance	11 ns t_d(on) and 23 ns t_f enable efficient operation in >5 MHz DC/DC controllers and Class-D drivers.
Thermal robustness	R_th(j-sp) = 25–30 K/W to solder point allows direct thermal coupling to PCB copper, improving reliability in sealed enclosures.

Applications

High-Side Load Switch

High-Speed Line Driver

Use Scenario: Power sequencing for USB peripherals or sensor modules in portable medical devices.

IC Role / Device Role / Timing Role: High-side switch controlling 5 V or 3.3 V supply rail; placed between input V_IN and load V_OUT.

Use Value: 48 mΩ R_DS(on) limits voltage drop to <100 mV at 2 A, preserving regulation margin; logic-level gate enables direct MCU control.

Use Scenario: Driving differential signaling lines in industrial PLC I/O modules with transient immunity.

IC Role / Device Role / Timing Role: Active pull-down element in open-drain bus interface; toggled at >1 MHz for noise-resilient data transmission.

Use Value: 23 ns fall time ensures clean edge integrity; −14 A peak current rating withstands ESD-induced line surges without latch-up.

Relay Driver

Switching Power Supply

Use Scenario: Solid-state replacement for electromechanical relays in HVAC control panels.

IC Role / Device Role / Timing Role: Low-side or high-side driver for relay coil (12 V, 200 mA); provides zero-crossing-compatible switching.

Use Value: Built-in source-drain diode (V_SD = −0.82 V) clamps inductive kickback-no external flyback diode needed.

Use Scenario: Synchronous rectifier or high-side switch in 12 V input, 5 V output buck converter for embedded gateways.

IC Role / Device Role / Timing Role: Upper FET in non-isolated buck topology; switched at 500 kHz–1 MHz with gate driver IC.

Use Value: 8.5 nC Q_G(tot) reduces gate driver losses; 117 K/W R_th(j-a) (with 6 cm² pad) keeps T_j < 100 °C at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMG2305UX-13	R_DS(on) = 48 mΩ @ V_GS = −4.5 V but higher Q_G(tot) (14 nC); slightly larger SOT-23 footprint (3.0 × 1.4 mm vs. 2.9 × 1.3 mm).	Less suitable for >1 MHz switching due to higher gate charge; better for static load switching.	Select when board layout allows marginally larger pad and gate drive strength exceeds 10 mA peak.
SI2305DS-T1-E3	R_DS(on) = 55 mΩ @ V_GS = −4.5 V; lower V_DS rating (−20 V same), but higher V_GS(th) (−1.0 to −2.5 V) risks marginal turn-on at 3.3 V.	Requires verification of gate drive margin in 3.3 V systems; less robust for fast PWM.	Prefer only if cost sensitivity outweighs timing precision and thermal headroom requirements.

Compared with DMG2305UX-13 and SI2305DS-T1-E3, PMV48XP,215 delivers superior combination of low gate charge (8.5 nC), guaranteed logic-level turn-on (−0.75 V V_GS(th) min), and tighter R_DS(on) distribution-making it optimal for high-frequency, space-constrained, and 3.3 V–driven applications.

Availability

PMV48XP,215 is available at Aetrix Electronics and suitable for high-side load switching, relay driving, high-speed line interfacing, and synchronous buck converter designs requiring stable component supply and long-term production continuity.

Supply support for PMV48XP,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-grade and industrial MOSFETs.

The PMV48XP belongs to Nexperia's TrenchMOS P-channel portfolio, engineered specifically for logic-compatible, low-R_DS(on) switching in space-constrained consumer, computing, and industrial power management applications.

FAQ

What is the maximum continuous drain current for PMV48XP,215 at 100 °C ambient temperature?

The maximum continuous drain current is −2.2 A at T_amb = 100 °C, per limiting values table. This derating reflects thermal constraints of the SOT23 package on standard FR4 PCBs; using a 6 cm² drain pad improves dissipation to support higher currents at elevated temperatures.

Can PMV48XP,215 be used in a high-side switch configuration with a 3.3 V microcontroller GPIO?

Yes-its gate threshold voltage range (−0.75 V to −1.25 V) ensures full enhancement with 3.3 V logic. With V_GS = −3.3 V, R_DS(on) remains below 75 mΩ, enabling reliable switching of loads up to 1.5 A without external level shifting.

Does PMV48XP,215 include an integrated body diode, and what is its forward voltage?

Yes-it has an inherent source-drain body diode with V_SD = −0.82 to −1.2 V at I_S = −2.4 A and T_j = 25 °C. This diode supports freewheeling in inductive loads and eliminates need for external flyback protection in relay or solenoid drivers.

What is the safe operating area (SOA) limitation for single-pulse operation at V_DS = −10 V?

At V_DS = −10 V and T_amb = 25 °C, the peak drain current is limited to −14 A for pulses ≤10 µs. SOA curves confirm this is within the R_DS(on)-limited region, meaning thermal runaway is not a concern for short transients under these conditions.

PMV48XP,215 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 3.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 55mOhm @ 2.4A, 4.5V

Vgs(th) (Max) @ Id:: 1.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 11 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 1000 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 510mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-236AB

PMV48XP,215 FAQ

1.How can I place an order for PMV48XP,215 through Aetrix?

Please submit a Request for Quotation (RFQ) for PMV48XP,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMV48XP,215 reliable?

The price and inventory of PMV48XP,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMV48XP,215 is usually 5 days.

3.What payment methods are accepted for PMV48XP,215?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMV48XP,215 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMV48XP,215?

PMV48XP,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMV48XP,215 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMV48XP,215?

For technical support, including PMV48XP,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMV48XP,215 requirements.

6.How does Aetrix verify that PMV48XP,215 is sourced from the original manufacturer or authorized distributors?

All PMV48XP,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMV48XP,215 meets industry standards.

7.What is the process for return or replacement of PMV48XP,215?

All PMV48XP,215 units undergo pre-shipment inspection (PSI). If there is an issue with PMV48XP,215, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMV48XP,215 part is unused and in its original packaging.

Return procedure for PMV48XP,215:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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