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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PMV48XP/MIR

Name: PMV48XP/MIR
Brand: Nexperia USA Inc.
SKU: PMV48XP/MIR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PMV48XP/MIR

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: PMV48XP/MIR.pdf

Description:: MOSFET P-CH 20V 3.5A TO236AB

Quantity:: RFQ Add To RFQ list

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Inventory:5,172

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Product details

Overview

PMV48XP/MIR from Nexperia is a P-channel enhancement-mode Trench MOSFET in SOT23 (TO-236AB) package, rated for −20 V drain-source voltage, −3.5 A continuous drain current at 25 °C, and 48 mΩ typical R_DS(on) at V_GS = −4.5 V. It serves as a high-side load switch in low-voltage power management circuits, delivering fast switching and logic-level gate drive compatibility for compact DC-DC and battery-powered systems.

For engineers reviewing the PMV48XP/MIR datasheet, PMV48XP/MIR pinout, PMV48XP/MIR application, or PMV48XP/MIR equivalent, this device is selected for high-speed line driving, relay control, and space-constrained high-side switching where low gate charge (8.5 nC), sub-1.25 V threshold voltage, and robust thermal resistance (117 K/W junction-to-ambient on standard FR4) are critical design factors.

Technical Context

This MOSFET employs Trench MOSFET technology to achieve low on-resistance and fast switching dynamics. Its gate threshold voltage range (−0.75 V to −1.25 V at 25 °C) ensures reliable turn-on with 3.3 V logic, while its total gate charge of 8.5 nC (typ.) enables efficient drive with minimal controller loading.

The device features a built-in source-drain diode with −0.82 V forward voltage at −2.4 A, supporting bidirectional current handling in certain switching topologies. Thermal performance is characterized for two mounting conditions: standard footprint (R_th(j-a) = 213 K/W) and enhanced 6 cm² drain pad (R_th(j-a) = 117 K/W), enabling accurate thermal design across PCB variants.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−20 V - Maximum blocking voltage for 12 V/15 V rail applications
I_D (continuous)	−3.5 A at T_amb = 25 °C - Supports moderate-power loads without heatsinking on standard FR4
R_DS(on)	48 mΩ typ. at V_GS = −4.5 V, I_D = −2.4 A - Enables <115 mW conduction loss at 2.4 A
V_GS(th)	−1.0 V typ. - Ensures full enhancement with 2.5–3.3 V microcontroller outputs
Q_G(tot)	8.5 nC typ. - Reduces gate driver power and switching transition time
t_d(on)/t_f	11 ns / 23 ns - Supports >10 MHz switching in optimized layouts
R_th(j-a)	117 K/W (with 6 cm² drain pad) - Allows ~4.1 W max power dissipation before reaching 150 °C junction

Pinout & Package

SOT23 (TO-236AB) plastic surface-mounted package with 3 leads; compact 2.9 mm × 1.3 mm footprint, 1.1 mm height, and gull-wing lead form for reflow compatibility.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires ≤12 V negative bias relative to source to turn on
2 (S)	Source	Reference node for gate drive; connected to higher potential in high-side configuration
3 (D)	Drain	Load connection point; thermally coupled to PCB copper for heat dissipation

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced with 2.5–3.3 V logic-compatible controllers, eliminating level-shifter need
Trench MOSFET architecture	Delivers lower R_DS(on) per die area vs. planar MOSFETs, enabling smaller SOT23 package without performance trade-off
Fast switching speed	11 ns turn-on delay + 23 ns fall time supports high-frequency PWM in portable power rails
Low gate charge	8.5 nC total gate charge reduces driver IC stress and dynamic losses during transitions

Applications

High-Side Load Switch

High-Speed Line Driver

Use Scenario: Powering peripheral modules (e.g., sensors, LEDs) from a shared 3.3 V or 5 V rail with independent ON/OFF control.

IC Role / Device Role / Timing Role: High-side switch controlling current flow from supply to load; operates in linear or saturated mode depending on gate voltage.

Use Value: Eliminates need for external level shifters and provides clean, low-loss power gating with <115 mW conduction loss at 2.4 A.

Use Scenario: Driving capacitive bus lines (e.g., I²C pull-up, GPIO expansion) requiring rapid edge rates and low output impedance.

IC Role / Device Role / Timing Role: Active pull-down element with fast turn-off (23 ns fall time) and low R_DS(on) to minimize signal distortion.

Use Value: Enables >1 MHz digital signaling on 3.3 V buses while maintaining noise margin and reducing rise/fall asymmetry.

Relay Driver

Switching Power Circuit

Use Scenario: Replacing mechanical relays in industrial I/O modules or automotive body control units for coil energization/de-energization.

IC Role / Device Role / Timing Role: Low-side or high-side switch controlling relay coil current; handles inductive kickback via internal body diode.

Use Value: Provides 14 A peak surge capability and −0.82 V source-drain diode forward drop to clamp flyback voltage without external snubber.

Use Scenario: Synchronous rectification or buck converter high-side switch in low-voltage DC-DC converters (e.g., 5 V → 3.3 V).

IC Role / Device Role / Timing Role: Main power switch operating in hard-switched or quasi-resonant topology with gate-driven timing control.

Use Value: Achieves 48 mΩ R_DS(on) at −4.5 V drive, minimizing conduction loss while supporting >10 MHz switching with 8.5 nC Q_G.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2053UVT-7	−20 V V_DS, −3.8 A I_D, 42 mΩ R_DS(on) at −4.5 V, same SOT23 package	Lower R_DS(on) but higher Q_G (12 nC) and slightly higher V_GS(th) (−1.4 V min)	Select when lowest conduction loss is prioritized over gate drive efficiency
SI2305DS-T1-E3	−20 V V_DS, −4.1 A I_D, 55 mΩ R_DS(on) at −4.5 V, same SOT23 package	Higher current rating but higher on-resistance and slower switching (t_f = 35 ns)	Select when higher continuous current headroom is required and layout allows for extra thermal margin

Compared with DMN2053UVT-7 and SI2305DS-T1-E3, PMV48XP/MIR offers the best balance of low gate charge (8.5 nC), tight threshold voltage distribution (−0.75 to −1.25 V), and proven thermal performance on standard FR4-making it optimal for space- and drive-limited high-side switches in portable electronics.

Availability

PMV48XP/MIR is available at Aetrix Electronics and suitable for high-side load switching, relay driving, high-speed line driving, and low-voltage DC-DC power circuits requiring stable component supply and consistent parametric performance across production batches.

Supply support for PMV48XP/MIR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in MOSFETs, ESD protection, and logic ICs for consumer, industrial, and automotive markets.

The PMV48XP/MIR belongs to Nexperia's TrenchMOS portfolio, engineered specifically for compact, logic-level-driven power switching in battery-powered and space-constrained applications where low R_DS(on), fast switching, and robust thermal behavior are essential.

FAQ

What is the maximum safe operating junction temperature for PMV48XP/MIR?

The absolute maximum junction temperature is 150 °C per the datasheet limiting values table. Operation above this temperature risks permanent degradation of the MOSFET channel and packaging integrity. Derating curves (Fig 2) show that continuous drain current must be reduced to −2.2 A at 100 °C ambient, and thermal design must ensure junction temperature remains below 150 °C under worst-case power dissipation and PCB layout conditions.

Can PMV48XP/MIR be used in a low-side switching configuration?

Yes, PMV48XP/MIR can operate as a low-side switch, though its P-channel structure makes it less common than N-channel devices in that role. When used low-side, the source connects to ground and the drain to the load, requiring the gate to be pulled negative relative to source for turn-on. This necessitates a negative gate drive or charge-pump circuit, increasing system complexity versus an N-channel alternative.

Does PMV48XP/MIR have avalanche ruggedness rating?

No avalanche energy rating (E_AS) is specified in the datasheet. The device is not characterized or guaranteed for repetitive unclamped inductive switching. For inductive loads like relays, external clamping (e.g., TVS diode or RC snubber) is recommended to limit V_DS overshoot beyond the −20 V rating, especially during fast turn-off transients.

What is the gate leakage current specification at maximum rated V_GS?

At V_GS = −12 V and T_j = 25 °C, the maximum gate leakage current (I_GSS) is −100 nA, as stated in Table 7. This ultra-low leakage ensures minimal static power draw in always-on control circuits and supports long-term reliability in battery-backed applications where gate bias stability is critical.

PMV48XP/MIR Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 3.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 55mOhm @ 2.4A, 4.5V

Vgs(th) (Max) @ Id:: 1.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 11 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 1000 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 510mW (Ta), 4.15W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-236AB

PMV48XP/MIR FAQ

1.How can I place an order for PMV48XP/MIR through Aetrix?

Please submit a Request for Quotation (RFQ) for PMV48XP/MIR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMV48XP/MIR reliable?

The price and inventory of PMV48XP/MIR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMV48XP/MIR is usually 5 days.

3.What payment methods are accepted for PMV48XP/MIR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMV48XP/MIR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMV48XP/MIR?

PMV48XP/MIR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMV48XP/MIR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMV48XP/MIR?

For technical support, including PMV48XP/MIR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMV48XP/MIR requirements.

6.How does Aetrix verify that PMV48XP/MIR is sourced from the original manufacturer or authorized distributors?

All PMV48XP/MIR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMV48XP/MIR meets industry standards.

7.What is the process for return or replacement of PMV48XP/MIR?

All PMV48XP/MIR units undergo pre-shipment inspection (PSI). If there is an issue with PMV48XP/MIR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMV48XP/MIR part is unused and in its original packaging.

Return procedure for PMV48XP/MIR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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