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Nexperia USA Inc. PMV48XP/ZLR
- Part No.:
- PMV48XP/ZLR
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
PMV48XP/ZLR.pdf
- Description:
- PMV48XP/ZLR
- Quantity:
- Payment:
- Shipping:
Inventory:2,568
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Product details
Overview
PMV48XP/ZLR from Nexperia is a P-channel enhancement-mode Trench MOSFET in SOT23 (TO-236AB) package, designed for high-side load switching with −20 V drain-source voltage rating, −3.5 A continuous drain current at 25 °C, and 48 mΩ typical RDS(on) at VGS = −4.5 V. It operates as a logic-level-compatible power switch in compact DC/DC and battery management circuits.
For engineers reviewing the PMV48XP/ZLR datasheet, PMV48XP/ZLR pinout, PMV48XP/ZLR application, or PMV48XP/ZLR equivalent, this device supports fast-switching high-side configurations requiring low gate charge (8.5 nC), sub-1.25 V gate threshold, and robust thermal performance up to 150 °C junction temperature.
Technical Context
This MOSFET uses Trench MOSFET technology to achieve low on-resistance and fast switching, with gate threshold voltage centered at −1.0 V (−0.75 to −1.25 V range) enabling direct drive from 3.3 V logic. Its −20 V VDS rating and −14 A peak drain current support transient-heavy loads in portable power rails.
The device features integrated source-drain diode with −0.82 V forward voltage at −2.4 A, and exhibits 1000 pF input capacitance and 90 pF reverse transfer capacitance-key parameters governing gate drive strength and EMI behavior in high-frequency switching nodes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | −20 V - Maximum blocking voltage for 24 V rail or automotive 12 V systems with margin |
| ID (continuous) | −3.5 A at Tamb = 25 °C - Supports moderate-power loads like LED banks or sensor modules |
| RDS(on) | 48 mΩ typ. at VGS = −4.5 V - Enables <170 mW conduction loss at 2.4 A, critical for thermal budget in SOT23 |
| QG(tot) | 8.5 nC typ. - Allows clean 10–20 ns switching edges with standard 5–10 Ω gate drivers |
| VGS(th) | −1.0 V typ. (−0.75 to −1.25 V) - Ensures full enhancement with 3.3 V microcontroller GPIO without level shifting |
| td(off) | 61 ns typ. - Supports >5 MHz PWM operation in synchronous buck high-side switches |
| Tj(max) | 150 °C - Permits operation in sealed enclosures or near heat sources without derating below 100 °C ambient |
Pinout & Package
SOT23 (TO-236AB) plastic surface-mounted package with 3 leads; compact 2.9 × 1.3 × 1.0 mm footprint optimized for space-constrained PCB layouts and automated assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal accepting logic-level voltage; requires ≤100 nA leakage current at −12 V bias |
| 2 (S) | Source | Reference node for gate drive; tied to system ground or positive rail depending on high-/low-side topology |
| 3 (D) | Drain | Power output terminal; connected to load; thermally coupled to 6 cm² copper pad per datasheet layout guidance |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level compatibility | Guaranteed turn-on at VGS = −2.5 V, enabling direct interface with 3.3 V MCUs without external driver stages |
| Trench MOSFET architecture | Delivers 25% lower RDS(on) vs. planar P-channel equivalents in same SOT23 footprint, improving efficiency in battery-powered devices |
| Very fast switching | Combined td(on) + tr + td(off) + tf < 110 ns ensures minimal switching losses at 1–5 MHz frequencies |
| Low gate charge | 8.5 nC total gate charge reduces required gate driver current and eases PCB routing of gate traces |
| Integrated body diode | Forward voltage ≤ −1.2 V at −2.4 A enables freewheeling in inductive loads without external diode in many applications |
Applications
| High-Side Load Switch | High-Speed Line Driver |
|---|---|
|
Use Scenario: Power sequencing for USB peripherals or display backlight in portable medical monitors. IC Role / Device Role / Timing Role: High-side switch controlling 5 V or 3.3 V supply rail with controlled inrush and fault isolation. Use Value: 48 mΩ RDS(on) limits voltage drop to <120 mV at 2.5 A, preserving regulation margin while supporting <10 µs turn-on for responsive enable control. |
Use Scenario: Driving differential signaling lines in industrial I/O modules with fast edge rates. IC Role / Device Role / Timing Role: Active pull-up element in open-drain bus interfaces (e.g., SMBus, I²C extensions) requiring sub-20 ns transitions. Use Value: 61 ns turn-off delay and 23 ns fall time ensure clean signal integrity up to 2 Mbps without overshoot or ringing. |
| Relay Driver | Switching Circuit |
|
Use Scenario: Solid-state replacement for electromechanical relays in HVAC control panels. IC Role / Device Role / Timing Role: Low-power coil driver switching 12 V/200 mA relay coils with zero-contact bounce and 10⁶+ cycle lifetime. Use Value: −1.0 V VGS(th) allows direct drive from 3.3 V MCU outputs; 14 A peak current handles relay inrush surges without latch-up. |
Use Scenario: Power path selection in dual-battery backup systems for railway telemetry units. IC Role / Device Role / Timing Role: Bidirectional load switch managing power flow between primary and backup Li-ion cells. Use Value: Source-drain diode VSD ≤ −1.2 V enables passive reverse-current blocking; 150 °C Tj(max) sustains operation in unventilated cabinets. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2053LFG-7 | −20 V, −4.2 A, 38 mΩ RDS(on), SOT23 package, but requires −2.5 V minimum VGS(th) | Better conduction loss at high current, but incompatible with 1.8 V logic; needs level-shifter for ultra-low-voltage MCUs | Select when higher current (>3.5 A) and lower RDS(on) outweigh gate drive simplicity |
| SI2301BDS-T1-BE3 | −20 V, −2.7 A, 115 mΩ RDS(on), same SOT23, VGS(th) = −0.7 V min | Lower gate threshold improves 1.8 V compatibility, but higher on-resistance increases thermal load above 1.5 A | Select for 1.8 V systems where gate drive margin is critical and current stays below 2 A |
Compared with DMN2053LFG-7 and SI2301BDS-T1-BE3, PMV48XP/ZLR uniquely balances −1.0 V VGS(th), 48 mΩ RDS(on), and 8.5 nC QG to deliver optimal trade-off between logic compatibility, conduction loss, and switching speed in space-constrained 3.3 V designs.
Availability
PMV48XP/ZLR is available at Aetrix Electronics and suitable for high-side load switching, relay driving, high-speed line driving, and compact DC/DC power path management requiring stable component supply across production lifecycles.
Supply support for PMV48XP/ZLR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable discrete, logic, and MOSFET solutions for automotive, industrial, and consumer markets.
PMV48XP/ZLR belongs to Nexperia's TrenchMOS P-channel portfolio, engineered specifically for logic-compatible, low-RDS(on) switching in space- and power-sensitive applications such as portable instrumentation and smart sensors.
FAQ
What is the maximum continuous drain current for PMV48XP/ZLR at 100 °C ambient?
The datasheet specifies −2.2 A continuous drain current at Tamb = 100 °C and VGS = −4.5 V, derived from thermal derating curves and RDS(on) increase with junction temperature. This value assumes standard FR4 PCB with single-sided 6 cm² drain pad per Figure 5 thermal guidelines.
Can PMV48XP/ZLR be used in a low-side switching configuration?
Yes, it can operate in low-side mode, but its P-channel structure requires gate voltage below source to turn on-making it less efficient than N-channel alternatives in that topology. The −1.0 V VGS(th) and 48 mΩ RDS(on) remain valid, though gate drive complexity increases due to negative voltage swing requirements.
Is the PMV48XP/ZLR RoHS compliant and halogen-free?
Yes, PMV48XP/ZLR meets RoHS Directive 2011/65/EU and is halogen-free per Nexperia's product compliance documentation (document ID: PMV48XP v.1, Rev. 1, December 2010), with lead-free solderability verified per J-STD-020.
What is the safe operating area (SOA) limitation at DC operation with 25 °C ambient?
At DC and Tamb = 25 °C, the SOA is limited by 510 mW total power dissipation (Rth(j-a) = 245 K/W), corresponding to ~1.0 A continuous current at −20 V VDS. Derating begins immediately above 25 °C ambient per Figure 1's normalized power curve.
PMV48XP/ZLR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 55mOhm @ 2.4A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1000 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 510mW (Ta), 4.15W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-236AB
PMV48XP/ZLR FAQ
1.How can I place an order for PMV48XP/ZLR through Aetrix?
Please submit a Request for Quotation (RFQ) for PMV48XP/ZLR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMV48XP/ZLR reliable?
The price and inventory of PMV48XP/ZLR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMV48XP/ZLR is usually 5 days.
3.What payment methods are accepted for PMV48XP/ZLR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMV48XP/ZLR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMV48XP/ZLR?
PMV48XP/ZLR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMV48XP/ZLR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMV48XP/ZLR?
For technical support, including PMV48XP/ZLR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMV48XP/ZLR requirements.
6.How does Aetrix verify that PMV48XP/ZLR is sourced from the original manufacturer or authorized distributors?
All PMV48XP/ZLR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMV48XP/ZLR meets industry standards.
7.What is the process for return or replacement of PMV48XP/ZLR?
All PMV48XP/ZLR units undergo pre-shipment inspection (PSI). If there is an issue with PMV48XP/ZLR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMV48XP/ZLR part is unused and in its original packaging.
Return procedure for PMV48XP/ZLR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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