Nexperia USA Inc. PMV50UPEVL

Overview

PMV50UPE from Nexperia is a single P-channel enhancement-mode Trench MOSFET in SOT23 (TO-236AB) package, designed for high-side load switching and relay driving. It features −20 V drain-source voltage rating, 50 mΩ typical R_DS(on) at V_GS = −4.5 V and I_D = −3.2 A, 3 kV HBM ESD protection, and low −0.6 V typical gate threshold voltage - enabling direct interface with 1.8 V/2.5 V logic in compact power control circuits.

For engineers reviewing the PMV50UPE datasheet, PMV50UPE pinout, PMV50UPE application, or PMV50UPE equivalent, key selection considerations include its P-channel topology for high-side configuration, thermal resistance of 218 K/W (junction-to-ambient, FR4 standard footprint), safe operating area up to 12.8 A peak drain current, and compatibility with reflow/wave soldering per IPC-7095 guidelines.

Technical Context

This discrete MOSFET operates in enhancement mode with negative gate control: conduction initiates when V_GS falls below −0.47 V (min), reaching full enhancement near −1.8 V. Its Trench process delivers low R_DS(on) while maintaining robust 150 °C maximum junction temperature and 3 kV ESD immunity - critical for industrial I/O and automotive body-control modules where transient resilience and space-constrained layout are essential.

The device exhibits strong gate charge characteristics: Q_G(tot) = 10.5–15.7 nC and Q_GD = 2.7 nC at V_DS = −10 V, supporting fast switching with controlled dV/dt in load-switch applications. Its source-drain diode has V_SD = −0.8 to −1.2 V at I_S = −1 A, enabling bidirectional current handling in certain fault-tolerant configurations without external diodes.

Key Specifications

Pinout & Package

Package: SOT23 (TO-236AB), surface-mount plastic package with 3 leads, 1.9 mm × 1.1 mm footprint, 0.9 mm height, and tin-plated terminations compliant with J-STD-020 reflow profiles.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-side switching applications.

Compared with DMG2305U-7 and AO3401, PMV50UPE offers superior 1.8 V logic compatibility due to its −0.6 V V_GS(th), industry-leading 3 kV ESD protection for ruggedized designs, and tighter R_DS(on) distribution - making it optimal for space-constrained, low-voltage, high-reliability loadswitching.

Availability

PMV50UPE is available at Aetrix Electronics and suitable for industrial sensor interfaces, automotive body control modules, USB-C power delivery adapters, and smart home actuator drivers requiring stable component supply across extended production lifecycles.

Supply support for PMV50UPE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in advanced packaging and automotive-qualified components.

PMV50UPE belongs to Nexperia's TrenchMOS P-channel portfolio, engineered specifically for compact, efficient high-side power switching in consumer, industrial, and automotive applications where low gate threshold and ESD robustness are critical.

FAQ

What is the maximum continuous drain current for PMV50UPE at 100 °C ambient temperature?

The maximum continuous drain current is −2 A at T_amb = 100 °C, as specified in Table 5 (Limiting values). This derating reflects thermal constraints on standard FR4 PCBs without enhanced copper pour; using a 6 cm² drain pad raises the limit to −3.2 A even at elevated temperatures.

Can PMV50UPE be used in a back-to-back configuration for AC load switching?

Yes - its symmetrical structure and −20 V V_DS rating allow use in back-to-back P-channel configuration for bidirectional blocking in DC and low-frequency AC applications. The integrated source-drain diode (V_SD = −0.8 to −1.2 V) supports freewheeling paths, but external flyback diodes are recommended for inductive loads exceeding 1 A.

Is PMV50UPE qualified for automotive applications per AEC-Q101?

No - PMV50UPE is not AEC-Q101 qualified. The datasheet explicitly states "Non-automotive qualified products" in Section 12.3, and no automotive stress test data (e.g., HTOL, TC, UHAST) is included. For automotive use, Nexperia recommends AEC-Q101 qualified equivalents such as PMV50XNEA.

What is the recommended PCB layout for optimal thermal performance?

For rated 500 mW operation, use the standard SOT23 footprint per Figure 19 (reflow) with minimum 1 oz copper. To achieve 955 mW, implement a 6 cm² exposed drain pad connected via ≥4 thermal vias (0.3 mm diameter) to inner-layer ground planes, as defined in Table 1 footnote [1] and Figure 18 package outline dimensions.