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NXP Semiconductors PMV50XP215
- Part No.:
- PMV50XP215
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
PMV50XP215.pdf
- Description:
- P-CHANNEL MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:4,287
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Product details
Overview
PMV50XP215 from Nexperia is a P-channel enhancement-mode Trench MOSFET in SOT23 (TO-236AB) package, rated for −20 V drain-source voltage, 4.4 A continuous drain current at VGS = −4.5 V and 25 °C ambient, and featuring 48 mΩ typical RDS(on) at same conditions. It serves as a high-side load switch or relay driver in compact DC power control circuits.
For engineers reviewing the PMV50XP215 datasheet, PMV50XP215 pinout, PMV50XP215 application, or PMV50XP215 equivalent, this page delivers verified electrical parameters, thermal derating behavior, gate charge profile, safe operating area limits, and validated alternative parts for industrial and consumer power switching designs.
Technical Context
This device uses Trench MOSFET technology to achieve low threshold voltage (−0.65 V typ.) and enhanced power dissipation (1096 mW on FR4 PCB with 6 cm² drain pad). Its −20 V VDS rating and −12 V maximum gate-source voltage support robust operation in 12 V and lower rail systems.
The PMV50XP215 exhibits 7.7 nC total gate charge and 1.65 nC gate-drain charge at VDS = −6 V, enabling fast switching with moderate gate drive strength. Its source-drain diode has −0.74 V forward voltage at −1 A, supporting synchronous rectification or flyback conduction where applicable.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | −20 V - Maximum blocking voltage for 12 V bus protection and reverse polarity safeguarding |
| RDS(on) | 48 mΩ (typ.) at VGS = −4.5 V, ID = −3.6 A, Tj = 25 °C - Enables <170 mW conduction loss at 3.6 A |
| ID (cont) | −4.4 A at VGS = −4.5 V, Tamb = 25 °C, t ≤ 5 s - Supports sustained load currents up to ~4 A in standard PCB layouts |
| VGS(th) | −0.65 V (typ.) - Ensures reliable turn-on with logic-level gate drive from 1.8 V–3.3 V microcontrollers |
| QG(tot) | 7.7 nC (typ.) - Allows sub-100 ns switching transitions using <10 Ω gate resistor without excessive drive power |
| Ptot | 1096 mW on FR4 PCB (6 cm² drain pad) - Defines thermal limit for unheatsinked surface-mount operation |
| Ciss | 744 pF - Impacts gate drive loop stability and EMI during hard-switching at >1 MHz |
Pinout & Package
Package: SOT23 (TO-236AB), surface-mounted plastic package with 3 leads; dimensions per Figure 18 (0.9–1.1 mm width, 2.8–3.0 mm length, 1.2–1.4 mm height).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Control terminal; accepts negative VGS to turn on; requires <8 nC charge for full enhancement |
| 2 | Source (S) | Reference node for gate drive; connected to higher-potential rail in high-side switch configuration |
| 3 | Drain (D) | Current output terminal; thermally coupled to PCB copper; largest thermal path to ambient |
Key Features
| Feature | Design Value |
|---|---|
| Low threshold voltage | VGS(th) = −0.65 V (typ.) enables direct interface with 1.8 V/2.5 V/3.3 V GPIO without level-shifting |
| Low RDS(on) | 48 mΩ (typ.) at −4.5 V gate drive reduces conduction loss by >30% vs. legacy planar P-MOSFETs in same package |
| Trench MOSFET architecture | Enables higher cell density and lower specific on-resistance, improving efficiency in space-constrained loads |
| Enhanced power dissipation | 1096 mW rating on standard FR4 board allows 4.4 A switching without heatsink or forced air |
| Fast switching capability | 7 ns turn-on delay + 18 ns rise time supports PWM frequencies up to 2 MHz in optimized layouts |
Applications
| Relay Driver | High-Side Load Switch |
|---|---|
|
Use Scenario: Replacing electromechanical relays in battery-powered IoT sensors and PLC I/O modules. IC Role / Device Role / Timing Role: P-channel MOSFET configured as high-side switch controlling 5–12 V loads with logic-level enable. Use Value: Eliminates coil inductance, bounce, and wear-out failure modes while reducing board area by >70% versus relay solutions. |
Use Scenario: Power sequencing and fault-isolation in portable medical devices and handheld test equipment. IC Role / Device Role / Timing Role: High-side switch enabling controlled power-up/down of subsystems with fast response (<200 ns) and low quiescent current. Use Value: Achieves <1 µA off-state leakage and <170 mW conduction loss at 3.6 A, extending battery runtime and minimizing thermal stress. |
| High-Speed Line Driver | Switching Circuit |
|
Use Scenario: Driving capacitive bus lines (e.g., RS-485 stubs, sensor buses) requiring fast edge rates and low shoot-through risk. IC Role / Device Role / Timing Role: Active pull-down element in complementary line driver topology with matched N-channel counterpart. Use Value: 135 ns turn-off delay and 68 ns fall time ensure clean signal transitions up to 5 Mbps without overshoot or ringing. |
Use Scenario: DC-DC converter synchronous rectifier or buck converter high-side switch in point-of-load regulators. IC Role / Device Role / Timing Role: Main switching element handling bidirectional current flow and reverse recovery in non-isolated topologies. Use Value: Integrated source-drain diode with −0.74 V VSD supports freewheeling with predictable forward drop and no external Schottky required. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2053LFG-7 | −20 V VDS, 4.2 A ID, 52 mΩ RDS(on) at −4.5 V; X1-DFN1006-3 package (1.0 × 0.6 mm) | Smaller footprint but lower thermal mass; 463 mW Ptot on FR4 limits continuous current to ~2.8 A | Select when board area is critical and peak current <3 A; verify solder joint reliability under thermal cycling |
| SI2301BDS-T1-BE3 | −20 V VDS, 2.7 A ID, 115 mΩ RDS(on) at −4.5 V; same SOT23 package | Higher on-resistance increases conduction loss >2×; lower gate charge (5.4 nC) improves switching efficiency at light loads | Prefer for cost-sensitive, low-current (<2 A), high-frequency (>500 kHz) applications where thermal margin is ample |
Compared with PMV50XP215, DMN2053LFG-7 trades thermal performance for miniaturization, while SI2301BDS-T1-BE3 offers lower gate drive demand at the expense of conduction loss-making PMV50XP215 optimal for balanced 3–4 A high-side switching where PCB layout and thermal design are fixed.
Availability
PMV50XP215 is available at Aetrix Electronics and suitable for relay replacement, high-side load switching, and high-speed line driving applications requiring stable component supply, consistent parametric performance across production lots, and long-term industrial lifecycle support.
Supply support for PMV50XP215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-grade and industrial MOSFETs, ESD protection, and logic ICs.
The PMV50XP215 belongs to Nexperia's TrenchMOS P-channel portfolio, engineered specifically for space-constrained, low-voltage DC power control in consumer, industrial, and computing applications where logic-level gate drive and thermal efficiency are essential.
FAQ
What is the maximum continuous drain current for PMV50XP215 at 100 °C ambient temperature?
The PMV50XP215 supports −2.3 A continuous drain current at VGS = −4.5 V and Tamb = 100 °C, as specified in Table 5 (Limiting values). This derating reflects junction-to-ambient thermal resistance of 217–255 K/W and must be validated against actual PCB layout and airflow conditions. The PMV50XP215 datasheet provides normalized current curves (Figure 2) to guide thermal design.
Does PMV50XP215 have integrated ESD protection?
The PMV50XP215 does not include on-chip ESD protection circuitry beyond inherent MOSFET gate oxide robustness. Its gate-source voltage rating is ±12 V, and it meets HBM ESD classification per JEDEC JESD22-A114 (not explicitly stated in the datasheet). For systems exposed to human handling or connector hot-plug events, external TVS diodes on gate and drain are recommended. The PMV50XP215 specification sheet omits dedicated ESD test data.
Can PMV50XP215 be used in linear (analog) regulation mode?
The PMV50XP215 is characterized and qualified for switching operation only. While its Safe Operating Area (SOA) curve (Figure 3) defines boundaries for linear use, the device lacks guaranteed SOA compliance at DC or low-frequency conditions beyond 10 µs pulses. Linear regulation is not recommended due to uncontrolled thermal runaway risk and absence of SOA derating data for steady-state bias. Use PMV50XP215 strictly as a switch.
What is the gate threshold voltage range for PMV50XP215 across temperature?
The PMV50XP215 gate-source threshold voltage ranges from −0.47 V (min) to −0.9 V (max) at Tj = 25 °C, with typical value −0.65 V. Figure 12 shows VGS(th) decreases slightly with rising junction temperature, reaching −0.55 V (typ.) at 150 °C. This negative tempco ensures stable turn-on behavior across industrial temperature ranges. All values apply directly to the PMV50XP215 device.
Is PMV50XP215 suitable for automotive applications?
No-PMV50XP215 is not automotive-qualified. Per Section 15.4 of the datasheet, "Non-automotive qualified products" applies: it is neither tested nor warranted for AEC-Q101 stress requirements, temperature cycling, or lifetime reliability in automotive environments. For automotive use, select Nexperia's automotive-grade equivalents (e.g., PMV50XPA) with explicit AEC-Q101 certification. PMV50XP215 remains appropriate for industrial and consumer applications only.
PMV50XP215 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 60mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id:
- 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 744 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 490mW (Ta), 4.63W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-236AB
PMV50XP215 FAQ
1.How can I place an order for PMV50XP215 through Aetrix?
Please submit a Request for Quotation (RFQ) for PMV50XP215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMV50XP215 reliable?
The price and inventory of PMV50XP215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMV50XP215 is usually 5 days.
3.What payment methods are accepted for PMV50XP215?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMV50XP215 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMV50XP215?
PMV50XP215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMV50XP215 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMV50XP215?
For technical support, including PMV50XP215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMV50XP215 requirements.
6.How does Aetrix verify that PMV50XP215 is sourced from the original manufacturer or authorized distributors?
All PMV50XP215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMV50XP215 meets industry standards.
7.What is the process for return or replacement of PMV50XP215?
All PMV50XP215 units undergo pre-shipment inspection (PSI). If there is an issue with PMV50XP215, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMV50XP215 part is unused and in its original packaging.
Return procedure for PMV50XP215:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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