NXP Semiconductors PMV65UN,215

Overview

PMV65UN from Nexperia is a single N-channel Trench MOSFET in SOT23 (TO-236AB) package, rated for 20 V drain-source voltage, 2.2 A continuous drain current at V_GS = 4.5 V and T_amb = 25 °C, with R_DS(on) of 64–76 mΩ at same conditions. It serves as a low-side load switch or high-speed line driver in compact power management circuits.

For engineers reviewing the PMV65UN datasheet, PMV65UN pinout, PMV65UN application, or PMV65UN equivalent, this page delivers verified electrical parameters, thermal derating curves, gate charge characteristics, and real-world switching performance data required for reliable low-voltage DC-DC control, relay driving, and portable device power gating.

Technical Context

The PMV65UN uses Trench MOSFET technology to achieve low threshold voltage (0.4–1.0 V), fast switching (t_d(on) = 6 ns, t_f = 12 ns), and stable R_DS(on) over temperature (111 mΩ max at T_j = 150 °C). Its gate threshold is specified at I_D = 250 µA with V_DS = V_GS, enabling direct logic-level drive from 1.8 V or 2.5 V microcontrollers.

It features a built-in source-drain diode with V_SD = 0.8–1.2 V at I_S = 0.7 A and exhibits low dynamic capacitances: C_iss = 183 pF, C_oss = 52 pF, and C_rss = 26 pF at V_DS = 10 V - supporting efficient high-frequency switching up to several MHz in non-synchronous buck or load-switch topologies.

Key Specifications

Pinout & Package

PMV65UN is housed in a plastic SOT23 (TO-236AB) surface-mount package with 3 leads, measuring 2.9 mm × 1.3 mm × 1.0 mm. The package uses standard footprint per Figure 19 (reflow) and Figure 20 (wave soldering) in the datasheet.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage MOSFET applications.

Compared with DMN2004LK-7 and AO3400, the PMV65UN offers the best balance of ultra-low gate threshold, compact thermal profile, and proven reliability in space-constrained 1.8 V–4.5 V logic-driven applications - making it ideal for wearables, portable medical devices, and low-power industrial sensors where gate drive voltage headroom is limited.

Availability

PMV65UN is available at Aetrix Electronics and suitable for relay driver circuits, high-speed line drivers, low-side loadswitches, and switching power circuits requiring stable component supply and long-term manufacturability.

Supply support for PMV65UN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on automotive, industrial, computing, consumer, and wearable markets.

The PMV65UN belongs to Nexperia's TrenchMOS portfolio, engineered specifically for low-voltage, low-power switching applications where logic-level drive, fast switching, and minimal PCB footprint are essential design requirements.

FAQ

What is the maximum continuous drain current for PMV65UN at 100 °C ambient temperature?

The PMV65UN supports a continuous drain current of 1.3 A at T_amb = 100 °C and V_GS = 4.5 V, as specified in Table 5 (Limiting values). This derating reflects thermal constraints on standard FR4 PCBs; actual capability depends on copper area and airflow. For designs operating near this limit, thermal simulation using the provided R_th(j-a) = 240–275 K/W (with 6 cm² drain pad) is recommended to verify junction temperature stays below 150 °C.

Can PMV65UN be driven directly by a 1.8 V microcontroller GPIO?

Yes, the PMV65UN can be driven directly by a 1.8 V microcontroller GPIO because its gate-source threshold voltage V_GS(th) is specified from 0.4 V to 1.0 V at I_D = 250 µA. At 1.8 V, the device achieves full enhancement with R_DS(on) ≤ 156 mΩ (at V_GS = 1.8 V, I_D = 0.8 A), sufficient for low-current switching. However, for optimal R_DS(on) (<76 mΩ), a 2.5 V or higher gate drive is recommended.

What is the safe operating area (SOA) limitation for PMV65UN at DC operation?

At DC operation with T_sp = 25 °C and a 6 cm² drain mounting pad on FR4, the PMV65UN's safe operating area is bounded by 2.2 A at V_DS ≤ 1 V, decreasing linearly to ~0.3 A at V_DS = 20 V (per Figure 3). This reflects thermal limits rather than avalanche or secondary breakdown - the device must remain within P_tot = 455 mW at T_amb = 25 °C unless enhanced cooling is applied.

Does PMV65UN have avalanche rating or ruggedness specification?

No, the PMV65UN datasheet does not specify avalanche energy rating (E_AS) or ruggedness testing. It is not characterized for repetitive or single-pulse avalanche operation. Designers must ensure that V_DS never exceeds 20 V under any condition - including inductive flyback - and use external clamping (e.g., TVS diodes or RC snubbers) where necessary. The device is intended for controlled switching, not unclamped inductive loads.

What is the marking code printed on the PMV65UN package?

The PMV65UN is marked with "ED%" on the top surface of the SOT23 package, where "%" is a placeholder for the manufacturing site code. This marking is defined in Table 4 (Marking codes) of the official datasheet and matches the ordering information for type number PMV65UN in TO-236AB (SOT23) package. No other alphanumeric variants or date codes are used for this part.