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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PMV65UNEAR

Name: PMV65UNEAR
Brand: Nexperia USA Inc.
SKU: PMV65UNEAR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PMV65UNEAR

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: PMV65UNEAR.pdf

Description:: MOSFET N-CH 20V 2.8A TO236AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PMV65UNEAR from Nexperia is a 20 V, N-channel enhancement-mode Trench MOSFET in SOT23 (TO-236AB) package, designed for low-side switching in space-constrained power management circuits. It delivers 2.8 A continuous drain current at V_GS = 4.5 V, exhibits R_DS(on) of 63 mΩ (typ) at 25 °C, and features AEC-Q101 qualification for automotive-grade reliability in LED drivers and loadswitch applications.

For engineers reviewing the PMV65UNEAR datasheet, PMV65UNEAR pinout, PMV65UNEAR application, or PMV65UNEAR equivalent, this page provides verified electrical parameters, thermal derating behavior, gate charge characteristics, ESD robustness (>2 kV HBM), and real-world switching performance data - all critical for low-voltage, high-efficiency discrete FET selection in automotive and industrial embedded systems.

Technical Context

This MOSFET employs Trench technology to achieve low threshold voltage (0.45–1.0 V), enabling reliable turn-on with 1.8 V logic-level drive. Its optimized gate charge profile (Q_G(tot) = 3.8–6 nC) supports fast switching with minimal driver loss, while the integrated source-drain diode (V_SD = 0.7–1.2 V at 0.9 A) enables bidirectional current handling in synchronous rectifier or reverse-polarity protection configurations.

The device's thermal design centers on junction-to-solder-point resistance (R_th(j-sp) = 17–20 K/W) and FR4 PCB mounting pad optimization (6 cm² drain pad), allowing 940 mW power dissipation at ambient temperature - a key enabler for thermally dense DC/DC converter and LED backlight modules where heatsinking is impractical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V maximum - defines safe operating voltage ceiling for 12 V automotive and 5–15 V industrial supply rails.
R_DS(on)	63 mΩ typ @ V_GS = 4.5 V, I_D = 2.8 A, T_j = 25 °C - determines conduction loss (P_cond ≈ 0.5 W at 2.8 A), critical for thermal budget in compact PCB layouts.
I_D	2.8 A continuous @ T_amb = 25 °C - sets maximum steady-state load current without forced cooling or oversized copper.
Q_G(tot)	3.8–6 nC - quantifies total gate charge required for full turn-on; directly impacts switching loss and driver IC selection (e.g., TC4427 or similar 2 A peak drivers).
V_GS(th)	0.45–1.0 V @ I_D = 250 µA - ensures compatibility with 1.8 V and 3.3 V microcontroller GPIOs without level-shifting circuitry.
ESD HBM	>2000 V - eliminates need for external ESD protection in board-level assembly for consumer and automotive infotainment modules.
P_tot	940 mW @ T_amb = 25 °C on FR4 PCB (6 cm² drain pad) - establishes practical power-handling limit for unheatsinked surface-mount designs.

Pinout & Package

Package: TO-236AB (SOT23), plastic surface-mounted, 3-lead, single-sided copper FR4 PCB mount with 6 cm² drain thermal pad.

Pin/Terminal	Circuit Role	Design Meaning
1	G (Gate)	Control terminal; requires ≤1.0 V threshold to initiate conduction; low C_iss (291 pF) minimizes driver loading and improves noise immunity.
2	S (Source)	Reference node for gate drive and current return path; tied to system ground in low-side switch configuration; hosts internal body diode cathode.
3	D (Drain)	High-current output node; electrically and thermally connected to large PCB copper area (6 cm²) to sustain 940 mW dissipation and reduce thermal impedance (R_th(j-sp) = 17–20 K/W).

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive underhood and cabin applications per stress test standard - enables use in ASIL-B compatible subsystems without additional qualification effort.
Low R_DS(on) at 1.8 V V_GS	83–94 mΩ @ V_GS = 1.8 V, I_D = 0.8 A - supports direct drive from low-voltage MCUs (e.g., STM32L4, RL78/G13) in battery-powered IoT nodes.
Enhanced thermal dissipation	940 mW P_tot on standard FR4 - exceeds typical SOT23 limits by >2×, reducing need for larger packages like SO-8 or DFN2020 in cost-sensitive designs.
Integrated body diode	V_SD = 0.7–1.2 V @ I_S = 0.9 A - enables freewheeling in inductive loads (e.g., solenoids, relays) without external diode, saving board space and BOM count.
Low gate charge	Q_GD = 0.9 nC - reduces Miller-induced shoot-through risk and enables clean 100 kHz+ PWM operation in LED dimming and DC/DC control loops.

Applications

Automotive LED Headlamp Driver

Industrial Low-Side Load Switch

Use Scenario: Driving high-brightness white LEDs in adaptive front lighting systems (AFS) with PWM dimming up to 20 kHz.

IC Role / Device Role / Timing Role: Low-side switch controlling LED string current; handles repetitive 2.5 A pulsed loads with <12 ns fall time.

Use Value: 63 mΩ R_DS(on) limits conduction loss to <40 mW per channel, enabling compact thermal design without aluminum substrates.

Use Scenario: Enabling/disabling 12 V power rails to sensors and actuators in PLC I/O modules.

IC Role / Device Role / Timing Role: Solid-state replacement for mechanical relays; supports hot-swap sequencing and inrush current limiting via controlled gate ramp.

Use Value: AEC-Q101 qualification and 2 kV HBM ESD rating eliminate field failures due to electrostatic discharge during factory assembly or field maintenance.

USB-C Power Delivery Sink

Smart Home Battery Protection Circuit

Use Scenario: Reverse-polarity and overcurrent protection in USB-C PD sink ports for portable monitors and docking stations.

IC Role / Device Role / Timing Role: Back-to-back configuration with second FET to block reverse current; leverages low V_GS(th) for precise 5–20 V threshold detection.

Use Value: Integrated source-drain diode (V_SD = 0.7 V) enables bidirectional blocking without external Schottky diodes, reducing footprint by 30%.

Use Scenario: Cell balancing and discharge path control in 2S Li-ion battery packs for smart locks and thermostats.

IC Role / Device Role / Timing Role: Discharge FET in protection IC reference design; operates at 3.0–4.2 V V_DS with <1 µA leakage (I_DSS) to preserve standby life.

Use Value: 1 µA max I_DSS at 20 V ensures <10 nA per-cell leakage in series configurations, extending shelf life beyond 12 months.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LK-7	R_DS(on) = 50 mΩ @ 4.5 V (lower), but Q_G(tot) = 7.2 nC (higher); no AEC-Q101 qualification.	Better conduction efficiency but higher switching loss; unsuitable for automotive environments requiring qualification traceability.	Select when thermal margin is tight but ESD and qualification requirements are relaxed (e.g., consumer USB hubs).
AO3400	R_DS(on) = 40 mΩ @ 4.5 V; V_GS(th) = 0.7–1.4 V (wider spread); ESD = 1.5 kV HBM (lower).	Higher gate threshold variability increases risk of partial turn-on in 1.8 V systems; lower ESD tolerance demands external protection.	Choose only for cost-driven non-automotive applications where gate drive margin exceeds 2.5 V and board-level ESD controls are implemented.

Compared with DMN2004LK-7 and AO3400, PMV65UNEAR offers balanced trade-offs: AEC-Q101 compliance ensures automotive deployment readiness, its 0.45–1.0 V V_GS(th) guarantees robust 1.8 V MCU compatibility, and its 940 mW FR4 power rating supports higher sustained loads than either alternative without thermal derating penalties.

Availability

PMV65UNEAR is available at Aetrix Electronics and suitable for automotive LED drivers, industrial low-side loadswitches, and USB-C power delivery protection circuits requiring stable component supply across multi-year production cycles.

Supply support for PMV65UNEAR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD-protected interfaces.

The PMV65UNEAR belongs to Nexperia's TrenchMOS® portfolio, engineered specifically for low-voltage, high-efficiency switching in space-constrained automotive and industrial applications where AEC-Q101 compliance, low R_DS(on), and robust ESD performance are mandatory.

FAQ

What is the maximum continuous drain current at 100 °C ambient temperature?

The PMV65UNEAR supports 1.8 A continuous drain current at T_amb = 100 °C, as specified in Table 5 (Limiting values). This derating reflects thermal constraints of the SOT23 package on FR4 PCB; actual usable current depends on copper area, airflow, and adjacent heat sources - design validation using Fig. 1 (normalized P_tot vs. T_j) is recommended.

Does PMV65UNEAR require a gate resistor for 3.3 V MCU drive?

No external gate resistor is required for basic on/off control with a 3.3 V MCU GPIO, since V_GS(th) (0.45–1.0 V) is well below 3.3 V and gate capacitance (C_iss = 291 pF) is low. However, a 10–47 Ω series resistor is recommended to damp ringing and limit peak gate current during fast edge transitions in high-noise environments.

Is the source-drain diode rated for continuous forward conduction?

Yes - the integrated body diode is rated for 0.9 A continuous source current (I_S) at T_amb = 25 °C, with V_SD = 0.7–1.2 V. For sustained conduction, thermal limits apply: power dissipation must stay within P_tot derating curves (Fig. 1), and junction temperature must remain ≤150 °C. Pulse operation up to 11 A (I_DM) is allowed for ≤10 µs.

How does the 940 mW power dissipation rating relate to PCB layout?

The 940 mW rating assumes a specific FR4 PCB layout: single-sided copper, tin-plated, with a 6 cm² copper pad connected to the drain pin. Reducing pad size increases thermal resistance (R_th(j-a) rises from 221 K/W to >300 K/W), lowering usable power. Layout adherence to Fig. 19 (reflow footprint) is essential to achieve the published thermal performance.

PMV65UNEAR Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 2.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 73mOhm @ 2.8A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 6 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 291 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 940mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-236AB

PMV65UNEAR FAQ

1.How can I place an order for PMV65UNEAR through Aetrix?

Please submit a Request for Quotation (RFQ) for PMV65UNEAR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMV65UNEAR reliable?

The price and inventory of PMV65UNEAR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMV65UNEAR is usually 5 days.

3.What payment methods are accepted for PMV65UNEAR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMV65UNEAR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMV65UNEAR?

PMV65UNEAR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMV65UNEAR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMV65UNEAR?

For technical support, including PMV65UNEAR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMV65UNEAR requirements.

6.How does Aetrix verify that PMV65UNEAR is sourced from the original manufacturer or authorized distributors?

All PMV65UNEAR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMV65UNEAR meets industry standards.

7.What is the process for return or replacement of PMV65UNEAR?

All PMV65UNEAR units undergo pre-shipment inspection (PSI). If there is an issue with PMV65UNEAR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMV65UNEAR part is unused and in its original packaging.

Return procedure for PMV65UNEAR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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