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NXP Semiconductors PMV65XPEA215
- Part No.:
- PMV65XPEA215
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
PMV65XPEA215.pdf
- Description:
- P-CHANNEL MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:2,701
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Product details
Overview
PMV65XPEA from Nexperia is a P-channel enhancement-mode Trench MOSFET in SOT23 (TO-236AB) package, designed for high-side load switching and relay driving. It features −20 V drain-source voltage rating, 67 mΩ typical RDS(on) at VGS = −4.5 V and ID = −2.8 A, 890 mW total power dissipation, AEC-Q101 qualification, and 2 kV HBM ESD protection.
For engineers reviewing the PMV65XPEA datasheet, PMV65XPEA pinout, PMV65XPEA application, or PMV65XPEA equivalent, this page delivers verified electrical parameters, thermal behavior under PCB-mount conditions, junction-to-ambient thermal resistance (230–260 K/W), safe operating area limits, and validated automotive-grade reliability data - all critical for high-reliability power control designs.
Technical Context
This device operates as a normally-off P-channel switch with gate-source threshold voltage (VGS(th)) ranging from −0.75 V to −1.25 V at 25 °C. Its trench-based structure enables fast switching (td(on) = 7 ns, tf = 17 ns) and low conduction loss, supported by 5–9 nC total gate charge and 618 pF input capacitance.
Thermal performance is defined for FR4 PCB mounting: Rth(j-a) = 230–260 K/W (free air), Rth(j-sp) = 15–20 K/W (solder point), and normalized power derating down to 0% at 150 °C junction temperature. Avalanche energy is rated at 5.4 mJ (unclamped, ID = −0.52 A).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | −20 V - Maximum drain-source blocking voltage; defines maximum supply rail compatibility in high-side configurations. |
| RDS(on) | 67–78 mΩ @ VGS = −4.5 V, ID = −2.8 A, Tj = 25 °C - Directly determines on-state power loss (Ploss = I² × R) in continuous load switching. |
| ID | −3.3 A (t ≤ 5 s, Tamb = 25 °C) - Peak pulsed current capability; supports short-duration surge loads without thermal runaway. |
| Ptot | 890 mW @ Tamb = 25 °C on FR4 PCB - Sets maximum steady-state power handling with standard layout (6 cm² drain pad). |
| VGS(th) | −0.75 to −1.25 V @ ID = −250 µA - Low threshold enables direct drive from 3.3 V logic with sufficient margin for noise immunity. |
| QG(tot) | 5–9 nC - Governs gate driver power requirement and switching speed in PWM applications. |
| Tj Range | −55 to +150 °C - Enables operation in under-hood automotive environments and industrial ambient extremes. |
Pinout & Package
Package: TO-236AB (SOT23), surface-mounted plastic package with 3 leads; dimensions per Figure 18 (0.9–1.1 mm width, 2.8–3.0 mm length, 0.45–0.48 mm height); optimized for reflow and wave soldering per Figures 19–20.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Control terminal; requires −4.5 V to fully enhance; low 11.6 Ω gate resistance minimizes RC delay during switching. |
| 2 | Source (S) | Reference node for gate drive; connected to higher potential rail in high-side configuration; carries full load current. |
| 3 | Drain (D) | Switched output node; thermally coupled to PCB via 6 cm² copper pad; handles −3.3 A pulsed and avalanche energy up to 5.4 mJ. |
Key Features
| Feature | Design Value |
|---|---|
| Trench MOSFET architecture | Enables lower RDS(on) and faster switching vs planar P-channel devices of same die size and voltage class. |
| AEC-Q101 qualification | Validated for automotive powertrain and body electronics; includes stress testing for temperature cycling, humidity, and mechanical shock. |
| ESD protection | 2 kV Human Body Model rating ensures robustness during board assembly and handling without additional protection circuitry. |
| Enhanced thermal dissipation | 890 mW Ptot on standard FR4 PCB exceeds typical SOT23 limits, reducing need for thermal vias or oversized pads. |
| Low gate charge | 5–9 nC QG(tot) allows efficient drive from microcontroller GPIO or low-power gate drivers in space-constrained designs. |
Applications
| Automotive Relay Driver | Industrial High-Side Load Switch |
|---|---|
Use Scenario: Driving 12 V automotive relays in body control modules where space and thermal budget are constrained. IC Role / Device Role / Timing Role: High-side switch controlling relay coil current; operates in DC on/off mode with <100 µs turn-on/turn-off transitions. Use Value: −20 V VDS and −3.3 A ID safely cover common relay coil requirements; AEC-Q101 ensures long-term reliability in vehicle environments. |
Use Scenario: Powering sensors or actuators from a shared 5 V or 3.3 V rail in programmable logic controllers. IC Role / Device Role / Timing Role: Load switch isolating downstream circuitry; controlled by MCU GPIO with logic-level compatible VGS(th). Use Value: 67 mΩ RDS(on) limits voltage drop to <180 mV at 2.7 A, preserving system regulation; SOT23 footprint saves board area versus SO-8 alternatives. |
| High-Speed Line Driver | USB Port Power Switch |
Use Scenario: Driving terminated transmission lines in industrial fieldbus nodes requiring fast edge rates and low shoot-through risk. IC Role / Device Role / Timing Role: Active pull-down element in complementary line driver stage; switched at >1 MHz with controlled dV/dt. Use Value: 7 ns td(on), 17 ns tf, and 58 pF Crss minimize signal distortion and crosstalk in differential pair routing. |
Use Scenario: Enabling/disabling VBUS power to USB peripherals in embedded host systems with overcurrent protection. IC Role / Device Role / Timing Role: Hot-swap power switch placed between upstream supply and USB connector; must withstand inrush and fault currents. Use Value: −12 A peak drain current (IDM) and 5.4 mJ avalanche energy provide margin against capacitive inrush and short-circuit transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2020LFG-7 | Lower RDS(on) (45 mΩ @ −4.5 V), but only rated to −20 V and not AEC-Q101 qualified; SOT23-3 package. | Suitable for non-automotive consumer or computing applications where qualification is not required. | Select DMN2020LFG-7 when lower conduction loss is prioritized and automotive qualification is unnecessary. |
| SI2301DS-T1-BE3 | Higher RDS(on) (110 mΩ @ −4.5 V), same −20 V rating and SOT23-3 package; not AEC-Q101 qualified. | Better suited for cost-sensitive, low-current (<1.5 A) applications where thermal margin is less critical. | Choose SI2301DS-T1-BE3 for budget-driven designs with modest current and no automotive compliance needs. |
Compared with PMV65XPEA, DMN2020LFG-7 offers superior conduction efficiency but lacks automotive qualification, while SI2301DS-T1-BE3 trades higher on-resistance for lower unit cost - making PMV65XPEA the optimal choice when AEC-Q101 compliance, thermal robustness, and balanced RDS(on)/QG are jointly required.
Availability
PMV65XPEA is available at Aetrix Electronics and suitable for automotive relay drivers, industrial high-side load switches, high-speed line drivers, and USB port power management requiring stable component supply across production lifecycles.
Supply support for PMV65XPEA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in MOSFETs, diodes, and ESD protection components.
The PMV65XPEA belongs to Nexperia's TrenchMOS P-channel portfolio, engineered specifically for space-constrained, thermally demanding automotive and industrial power switching applications where AEC-Q101 compliance and consistent parametric performance are mandatory.
FAQ
What is the maximum continuous drain current for PMV65XPEA at 100 °C ambient temperature?
The PMV65XPEA supports −1.8 A continuous drain current at Tamb = 100 °C, as specified in Table 5 (Limiting values). This value reflects thermal derating due to reduced heat dissipation at elevated ambient temperatures and assumes standard FR4 PCB mounting with 6 cm² drain pad.
Does PMV65XPEA support logic-level gate drive from a 3.3 V microcontroller?
Yes, PMV65XPEA has a gate-source threshold voltage (VGS(th)) of −0.75 to −1.25 V, enabling reliable enhancement with −3.3 V or −5 V gate drive. At VGS = −3.3 V, RDS(on) rises to ~125 mΩ (per Table 7), which remains usable for moderate-current switching applications.
Is PMV65XPEA suitable for avalanche energy handling in inductive load switching?
Yes, PMV65XPEA is rated for 5.4 mJ non-repetitive drain-source avalanche energy (EAS) under unclamped conditions with ID = −0.52 A and Tj(init) = 25 °C. This capability supports safe turn-off of inductive loads like relays and solenoids without external snubbers in many designs.
What is the thermal resistance from junction to solder point for PMV65XPEA?
The PMV65XPEA has a junction-to-solder-point thermal resistance (Rth(j-sp)) of 15–20 K/W, as specified in Table 6. This parameter is critical for estimating local temperature rise at the PCB solder joint during transient power events and informs thermal pad design decisions.
How does the RDS(on) of PMV65XPEA change with junction temperature?
PMV65XPEA exhibits positive temperature coefficient behavior: RDS(on) increases from 67 mΩ at 25 °C to 98–114 mΩ at 150 °C (Table 7). Figure 11 confirms ~1.5× increase in normalized RDS(on) over that range, supporting predictable thermal runaway avoidance in parallel configurations.
PMV65XPEA215 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 78mOhm @ 2.8A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 9 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 618 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 480mW (Ta), 6.25W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-236AB
PMV65XPEA215 FAQ
1.How can I place an order for PMV65XPEA215 through Aetrix?
Please submit a Request for Quotation (RFQ) for PMV65XPEA215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMV65XPEA215 reliable?
The price and inventory of PMV65XPEA215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMV65XPEA215 is usually 5 days.
3.What payment methods are accepted for PMV65XPEA215?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMV65XPEA215 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMV65XPEA215?
PMV65XPEA215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMV65XPEA215 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMV65XPEA215?
For technical support, including PMV65XPEA215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMV65XPEA215 requirements.
6.How does Aetrix verify that PMV65XPEA215 is sourced from the original manufacturer or authorized distributors?
All PMV65XPEA215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMV65XPEA215 meets industry standards.
7.What is the process for return or replacement of PMV65XPEA215?
All PMV65XPEA215 units undergo pre-shipment inspection (PSI). If there is an issue with PMV65XPEA215, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMV65XPEA215 part is unused and in its original packaging.
Return procedure for PMV65XPEA215:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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