Nexperia USA Inc. PMV65XP/MIR

Overview

PMV65XP from Nexperia is a single P-channel enhancement-mode Trench MOSFET in SOT23 (TO-236AB) package, designed for low-voltage load switching and battery management. It features −20 V drain-source voltage rating, 58 mΩ typical R_DS(on) at V_GS = −4.5 V and I_D = −2.8 A, −0.65 V typical gate threshold voltage, and −4.3 A continuous drain current capability - enabling compact, efficient power control in portable DC/DC converters.

For engineers reviewing the PMV65XP datasheet, PMV65XP pinout, PMV65XP application, or PMV65XP equivalent, this device is selected for low-threshold, low-R_DS(on) P-channel switching where space-constrained PCB layouts demand high performance per mm² in battery-powered systems.

Technical Context

This P-channel MOSFET employs Trench technology to achieve low on-resistance and fast switching with minimal gate charge (7.7 nC total). Its −0.47 V to −0.9 V V_GS(th) range ensures reliable turn-on from standard 3.3 V or 5 V logic rails without level-shifting circuitry.

The device operates within −55 °C to 150 °C junction temperature range and delivers 4165 mW maximum power dissipation at solder-point (T_sp = 25 °C), supported by 25–30 K/W junction-to-solder-point thermal resistance - optimized for FR4 PCBs with standard or enhanced drain pad layouts.

Key Specifications

Pinout & Package

SOT23 (TO-236AB) surface-mount plastic package with 3 leads; 2.8 mm × 1.4 mm footprint; 1.1 mm height; drain-connected tab for thermal relief on PCB.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switching applications.

Compared with DMN2011UFD-7 and SI2301DS-T1-BE3, the PMV65XP delivers the lowest R_DS(on) in SOT23, enabling higher efficiency at 2–3 A loads while maintaining identical PCB footprint and gate-drive compatibility.

Availability

PMV65XP is available at Aetrix Electronics and suitable for low-power DC-to-DC converters, battery management systems, and battery-powered portable equipment requiring stable component supply across production lifecycles.

Supply support for PMV65XP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert delivering high-performance, reliable discrete, logic, and MOSFET solutions with focus on efficiency, miniaturization, and automotive-grade robustness.

The PMV65XP belongs to Nexperia's TrenchMOS P-channel portfolio, engineered specifically for space- and power-constrained battery-switching applications in consumer and industrial portable electronics.

FAQ

What is the maximum continuous drain current for PMV65XP at 100 °C ambient?

The PMV65XP supports −1.8 A continuous drain current at T_amb = 100 °C with standard FR4 mounting. This derating reflects thermal limitations of the SOT23 package and ensures safe junction temperature below 150 °C under steady-state conditions.

Can PMV65XP be driven directly by a 3.3 V microcontroller GPIO?

Yes - its −0.65 V typical gate threshold voltage and −0.47 V minimum ensure full enhancement with 3.3 V logic high. No level shifter or external pull-up is required, simplifying design and reducing BOM count.

Is the drain pad electrically isolated in the SOT23 package?

No - the drain (Pin 3) is internally connected to the exposed metal pad beneath the package. This pad must be soldered to a PCB copper pour for both electrical connection and thermal conduction; it is not insulated.

What is the safe operating area (SOA) limitation at DC operation?

At DC, the SOA is bounded by R_DS(on) = V_DS/I_D line and 4165 mW maximum power dissipation at T_sp = 25 °C. For example, at V_DS = −5 V, maximum sustainable I_D is −0.83 A to avoid exceeding thermal limits.