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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PMV74EPER

Name: PMV74EPER
Brand: Nexperia USA Inc.
SKU: PMV74EPER
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PMV74EPER

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: PMV74EPER.pdf

Description:: MOSFET P-CH 30V 2.8A TO236AB

Quantity:: RFQ Add To RFQ list

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Inventory:11,445

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Product details

Overview

PMV74EPE from Nexperia is a P-channel enhancement-mode Trench MOSFET in SOT23 (TO-236AB) package, designed for high-side load switching and relay driving. It delivers 30 V drain-source voltage rating, 74 mΩ typical R_DS(on) at V_GS = −10 V and I_D = −2.8 A, logic-level gate drive compatibility down to −4.5 V, and ESD protection >2 kV HBM - enabling compact, fast-switching power control in space-constrained industrial and consumer PCBs.

For engineers reviewing the PMV74EPE datasheet, PMV74EPE pinout, PMV74EPE application, or PMV74EPE equivalent, this device is selected for low-voltage P-channel switching where thermal performance on FR4 PCBs, fast turn-on/turn-off timing (t_d(on) = 5 ns, t_f = 8 ns), and stable R_DS(on) across temperature (112 mΩ max at T_j = 150 °C) are critical design requirements.

Technical Context

This MOSFET operates in enhancement mode with a gate-source threshold voltage (V_GS(th)) of −1 to −3 V at 25 °C, ensuring reliable turn-on with standard logic-level signals. Its Trench MOSFET architecture enables low on-resistance and high transconductance (g_fs = 12 S typical), supporting efficient conduction and dynamic control in DC and pulsed load circuits.

The device features an integrated source-drain diode with V_SD = −0.8 to −1.2 V at I_S = −1.1 A, suitable for freewheeling in inductive loads. Thermal resistance from junction to ambient is 212 K/W (standard footprint) and 104 K/W (6 cm² drain pad), directly informing layout-dependent power handling up to 1 W continuous at 25 °C ambient.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−30 V - Maximum allowable drain-to-source voltage before breakdown; defines safe operating range in high-side switch configurations.
R_DS(on)	74 mΩ typ @ V_GS = −10 V, I_D = −2.8 A, T_j = 25 °C - Determines conduction loss and junction heating under nominal load.
Q_G(tot)	5.7–10 nC - Total gate charge required for full turn-on; impacts driver strength requirement and switching energy loss.
t_f	8 ns @ V_DS = −15 V, I_D = −2.7 A, R_G(ext) = 6 Ω - Fall time governs minimum achievable PWM frequency and EMI profile.
V_GS(th)	−2 V typ @ I_D = −250 µA - Threshold voltage ensures robust gate drive margin against noise in 3.3 V or 5 V logic systems.
P_tot	1 W @ T_amb = 25 °C (FR4, standard footprint) - Sets maximum continuous power dissipation without forced cooling or thermal relief.
C_iss	356 pF - Input capacitance affects gate drive loop stability and high-frequency switching behavior.

Pinout & Package

Package: TO-236AB (SOT23), surface-mounted plastic package with 3 leads; dimensions per IEC JEDEC outline sot023_po (max height 1.1 mm, body size 2.9 × 1.3 mm).

Pin/Terminal	Circuit Role	Design Meaning
1	G (Gate)	Control terminal; accepts logic-level voltage (−4.5 V to −20 V) to modulate channel conduction; requires <10 µA leakage current compliance.
2	S (Source)	Reference node for gate drive and current return path; tied to system ground or positive rail depending on high-side vs. low-side topology.
3	D (Drain)	Power output terminal; connects to load; must be routed over ≥6 cm² copper pour for rated 1 W dissipation in production layouts.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS = −4.5 V, eliminating need for level-shifting circuitry in 3.3 V microcontroller interfaces.
Fast switching speed	Turn-off delay (t_d(off)) = 19 ns and fall time (t_f) = 8 ns enable >5 MHz PWM operation with minimal switching loss.
Trench MOSFET technology	Delivers 74 mΩ R_DS(on) in SOT23 - 30% lower on-resistance than planar P-channel equivalents in same package.
ESD protection	HBM rating >2 kV reduces risk of gate oxide damage during board assembly and handling without external protection diodes.
Thermal performance	R_th(j-sp) = 17–20 K/W enables direct solder-point thermal coupling to PCB, simplifying thermal management in dense layouts.

Applications

Relay Driver

High-Speed Line Driver

Use Scenario: Driving coil of electromechanical relays in PLC I/O modules and industrial control panels.

IC Role / Device Role / Timing Role: High-side switch controlling 12–24 V relay coil current up to 2.8 A peak.

Use Value: Fast 19 ns turn-off delay prevents contact bounce-induced arcing; low R_DS(on) minimizes self-heating during sustained coil hold.

Use Scenario: Transmitting TTL/CMOS logic signals across noisy industrial backplanes or long cables.

IC Role / Device Role / Timing Role: Active pull-up switch providing controlled edge rate and impedance matching.

Use Value: 8 ns fall time ensures clean signal transitions up to 50 Mbps; low C_oss (60 pF) limits capacitive loading on driven line.

High-Side Load Switch

Switching Power Supply Sync Rectifier

Use Scenario: Enabling/disabling 5–12 V power rails for peripherals in battery-powered IoT sensors and wearables.

IC Role / Device Role / Timing Role: P-channel high-side switch with integrated gate resistor network for inrush control.

Use Value: −2 V V_GS(th) provides 1.3 V margin above 3.3 V logic high, preventing false turn-on from supply ripple or noise.

Use Scenario: Replacing Schottky diode in synchronous buck converter output stage for improved efficiency.

IC Role / Device Role / Timing Role: Low-loss freewheeling path during low-side switch off-time; leverages intrinsic body diode and low R_DS(on).

Use Value: 112 mΩ max R_DS(on) at 150 °C maintains <120 mW conduction loss at 1 A load, reducing thermal stress in sealed enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMG2305UVT-7	R_DS(on) = 48 mΩ @ −4.5 V (lower), but V_DS = −20 V (reduced voltage headroom); Q_G = 12 nC (higher drive demand).	Better for 3.3 V logic-driven 20 V systems needing ultra-low on-resistance; unsuitable for 30 V bus protection.	Select when V_DS ≤ 20 V and gate drive current >20 mA is available.
SI2301DS-T1-BE3	R_DS(on) = 115 mΩ @ −4.5 V (higher), V_DS = −20 V, ESD = 1 kV HBM (lower); thermal resistance 250 K/W (worse).	Cost-optimized for non-critical 3.3 V loads where switching speed and thermal margin are secondary.	Choose only for low-duty-cycle, low-current (<1 A), non-automotive consumer applications with relaxed reliability.

Compared with DMG2305UVT-7 and SI2301DS-T1-BE3, PMV74EPE uniquely balances 30 V rating, 74 mΩ R_DS(on) at −4.5 V, and 2 kV ESD in SOT23 - making it optimal for industrial 24 V control nodes requiring robustness, speed, and layout simplicity without derating.

Availability

PMV74EPE is available at Aetrix Electronics and suitable for relay drivers, high-speed line drivers, high-side load switches, and switching circuits requiring stable component supply and consistent SOT23 footprint compatibility.

Supply support for PMV74EPE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs, ESD protection, and logic ICs.

PMV74EPE belongs to Nexperia's TrenchMOS P-channel portfolio, engineered specifically for space-constrained, logic-driven power switching in industrial automation, consumer electronics, and communication infrastructure where thermal efficiency and gate-drive simplicity are prioritized.

FAQ

What is the maximum continuous drain current for PMV74EPE at 100 °C ambient?

The maximum continuous drain current is −1.8 A at T_amb = 100 °C, as specified in Table 5 (Limiting values). This value assumes mounting on an FR4 PCB with single-sided copper, tin-plated, and standard footprint - not the enhanced 6 cm² drain pad. Derating is linear between 25 °C and 100 °C per Figure 2.

Does PMV74EPE require a gate resistor for stability in switching applications?

A gate resistor is recommended to dampen ringing caused by gate-drain capacitance (C_rss = 38 pF) and PCB trace inductance. With R_G(ext) = 6 Ω (per test conditions in Table 7), measured t_f = 8 ns and t_d(off) = 19 ns are achieved. Values between 5 Ω and 22 Ω balance speed and EMI suppression for most 3.3 V MCU-driven designs.

Can PMV74EPE be used in automotive applications?

No - PMV74EPE is not AEC-Q101 qualified and lacks automotive-specific validation per Nexperia's legal disclaimers. It is explicitly designated for industrial and consumer use. Automotive applications require parts with documented PPAP, extended temperature testing (−40 °C to +125 °C junction), and failure-in-time (FIT) data, which this device does not provide.

How does the source-drain diode affect its use in reverse-polarity protection?

The intrinsic body diode has V_SD = −0.8 to −1.2 V at I_S = −1.1 A and is unidirectional - conducting only from source to drain. In reverse-polarity protection, it would conduct fault current if installed with drain toward input, risking destruction. For that function, PMV74EPE must be placed with source toward input and drain toward load, blocking reverse current via V_DS rating while using external series fuse or current limiter.

PMV74EPER Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 2.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 90mOhm @ 2.8A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 10 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 356 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 510mW (Ta), 6.4W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-236AB

PMV74EPER FAQ

1.How can I place an order for PMV74EPER through Aetrix?

Please submit a Request for Quotation (RFQ) for PMV74EPER on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMV74EPER reliable?

The price and inventory of PMV74EPER are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMV74EPER is usually 5 days.

3.What payment methods are accepted for PMV74EPER?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMV74EPER transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMV74EPER?

PMV74EPER orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMV74EPER order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMV74EPER?

For technical support, including PMV74EPER datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMV74EPER requirements.

6.How does Aetrix verify that PMV74EPER is sourced from the original manufacturer or authorized distributors?

All PMV74EPER products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMV74EPER meets industry standards.

7.What is the process for return or replacement of PMV74EPER?

All PMV74EPER units undergo pre-shipment inspection (PSI). If there is an issue with PMV74EPER, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMV74EPER part is unused and in its original packaging.

Return procedure for PMV74EPER:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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