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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

NXP Semiconductors PMV90EN,215

Name: PMV90EN,215
Brand: NXP Semiconductors
SKU: PMV90EN,215
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PMV90EN,215

Manufacturer:: NXP Semiconductors

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: PMV90EN,215.pdf

Description:: MOSFET N-CH 30V 1.9A TO236AB

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Product details

Overview

PMV90EN,215 from Nexperia is a single N-channel enhancement-mode Trench MOSFET in SOT23 (TO-236AB) package, designed for low-side switching with 30 V V_DS, 70 mΩ R_DS(on) at V_GS = 10 V and I_D = 1.9 A, logic-level gate drive compatibility (V_GS(th) = 1.5 V typ), and fast switching (t_d(on) = 3 ns, t_f = 5 ns). It serves in relay drivers, high-speed line drivers, and compact load-switching circuits.

For engineers reviewing the PMV90EN,215 datasheet, PMV90EN,215 pinout, PMV90EN,215 application, or PMV90EN,215 equivalent, key selection factors include its 30 V drain-source rating, 70 mΩ on-resistance at 10 V gate drive, SOT23 thermal resistance (R_th(j-a) = 240–275 K/W with 6 cm² drain pad), 2.6 nC total gate charge, and logic-level threshold enabling direct microcontroller interface without level-shifting.

Technical Context

This N-channel MOSFET uses Trench MOSFET technology to achieve low R_DS(on) and fast switching performance in a miniature SOT23 package. Its gate threshold voltage (1.5 V typ) ensures reliable turn-on with 3.3 V or 5 V logic systems, while its 30 V V_DS rating supports industrial and consumer power-rail switching up to 24 V nominal.

The device exhibits low dynamic capacitances-C_iss = 132 pF, C_oss = 31 pF, C_rss = 13 pF-and optimized charge distribution (Q_GS = 0.42 nC, Q_GD = 0.34 nC), enabling efficient high-frequency operation in DC-DC converters and digital load switches.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum continuous drain-source voltage; supports 24 V rail switching with margin.
R_DS(on)	70 mΩ (typ) at V_GS = 10 V, I_D = 1.9 A, T_j = 25 °C - Enables <150 mW conduction loss at 1.9 A, critical for thermally constrained SOT23 designs.
V_GS(th)	1.5 V (typ) - Ensures full enhancement with standard 3.3 V GPIO, eliminating need for external gate driver.
Q_G(tot)	2.6 nC (typ) - Low gate charge reduces drive power and enables >1 MHz switching in compact load-switch applications.
t_f	5 ns (typ) - Fast fall time minimizes switching transition losses in high-frequency PWM control.
P_tot	455 mW (with 6 cm² drain pad) - Defines maximum steady-state power dissipation under FR4 PCB conditions.
C_iss	132 pF (typ) - Input capacitance determines gate drive strength requirement for target slew rate.

Pinout & Package

SOT23 (TO-236AB) plastic surface-mounted package: 3-pin, small outline, lead pitch 0.95 mm, body size 2.9 × 1.3 × 1.0 mm, drain-connected tab for thermal enhancement.

Pin/Terminal	Circuit Role	Design Meaning
1	G (Gate)	Control terminal; accepts logic-level voltage (≥2.5 V) to fully enhance channel; requires <100 nA leakage current budget.
2	S (Source)	Reference node for gate drive and current return path; tied to system ground in low-side configuration.
3	D (Drain)	High-current output terminal; connected to load; thermally coupled to PCB copper pad (6 cm² recommended) for 455 mW dissipation.

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) = 1.5 V typ enables direct interface with 3.3 V/5 V microcontrollers without level shifters or gate drivers.
Trench MOSFET architecture	Delivers 70 mΩ R_DS(on) in SOT23, reducing conduction loss by ~30% vs. planar MOSFETs of same footprint.
Low Q_G(tot) / Q_GD ratio	2.6 nC total / 0.34 nC gate-drain charge improves switching efficiency and EMI behavior in hard-switched topologies.
Fast switching speed	3 ns turn-on delay + 5 ns fall time supports >5 MHz PWM in gate-controlled load switching applications.
Robust thermal design	R_th(j-a) = 240 K/W (with 6 cm² pad) allows 1.9 A continuous operation at ambient ≤60 °C without forced cooling.

Applications

Relay Driver	High-Speed Line Driver
Use Scenario: Replacing electromechanical relays in PLC I/O modules and sensor interface cards where mechanical wear and bounce are unacceptable. IC Role / Device Role / Timing Role: Low-side switch controlling coil current; driven by 3.3 V FPGA GPIO with <5 ns timing margin for synchronized actuation. Use Value: Eliminates contact arcing and lifetime limitations; 70 mΩ R_DS(on) limits coil power loss to <250 mW at 1.9 A, enabling solid-state reliability in industrial control.	Use Scenario: Driving terminated 50 Ω transmission lines in test equipment and communication interfaces requiring clean edge rates. IC Role / Device Role / Timing Role: Active pull-down element in complementary line driver stage; switched at >10 MHz with controlled dV/dt via gate resistor. Use Value: 5 ns fall time and 13 pF Crss minimize signal distortion and crosstalk; low R_DS(on) ensures <0.1 V undershoot at 100 mA load.
Low-Side Load Switch	Switching Power Supply Sync Rectifier
Use Scenario: Enabling/disabling 3.3 V or 5 V subsystems (e.g., USB peripherals, sensors) in battery-powered IoT nodes. IC Role / Device Role / Timing Role: Controlled power path switch; turned on/off by baseband processor GPIO with <1 µs response for rapid power gating. Use Value: 1.5 V V_GS(th) guarantees turn-on at 2.8 V battery voltage; 0.5 A source diode rating supports reverse-current protection during hot-plug events.	Use Scenario: Secondary-side synchronous rectification in isolated 12 V input, 3.3 V output flyback converters for embedded power supplies. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; driven by transformer-coupled gate signal with precise dead-time control. Use Value: 70 mΩ R_DS(on) cuts conduction loss by >60% vs. 400 mΩ Schottky, improving efficiency by 1.2% at 1 A output; 30 V rating covers reflected voltage spikes.

Relay Driver

High-Speed Line Driver

Use Scenario: Replacing electromechanical relays in PLC I/O modules and sensor interface cards where mechanical wear and bounce are unacceptable.

IC Role / Device Role / Timing Role: Low-side switch controlling coil current; driven by 3.3 V FPGA GPIO with <5 ns timing margin for synchronized actuation.

Use Value: Eliminates contact arcing and lifetime limitations; 70 mΩ R_DS(on) limits coil power loss to <250 mW at 1.9 A, enabling solid-state reliability in industrial control.

Use Scenario: Driving terminated 50 Ω transmission lines in test equipment and communication interfaces requiring clean edge rates.

IC Role / Device Role / Timing Role: Active pull-down element in complementary line driver stage; switched at >10 MHz with controlled dV/dt via gate resistor.

Use Value: 5 ns fall time and 13 pF Crss minimize signal distortion and crosstalk; low R_DS(on) ensures <0.1 V undershoot at 100 mA load.

Low-Side Load Switch

Switching Power Supply Sync Rectifier

Use Scenario: Enabling/disabling 3.3 V or 5 V subsystems (e.g., USB peripherals, sensors) in battery-powered IoT nodes.

IC Role / Device Role / Timing Role: Controlled power path switch; turned on/off by baseband processor GPIO with <1 µs response for rapid power gating.

Use Value: 1.5 V V_GS(th) guarantees turn-on at 2.8 V battery voltage; 0.5 A source diode rating supports reverse-current protection during hot-plug events.

Use Scenario: Secondary-side synchronous rectification in isolated 12 V input, 3.3 V output flyback converters for embedded power supplies.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; driven by transformer-coupled gate signal with precise dead-time control.

Use Value: 70 mΩ R_DS(on) cuts conduction loss by >60% vs. 400 mΩ Schottky, improving efficiency by 1.2% at 1 A output; 30 V rating covers reflected voltage spikes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-side switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LK-7	20 V V_DS, 42 mΩ R_DS(on) at 4.5 V, SOT23 - lower voltage rating but superior on-resistance at low gate drive.	Not suitable for 24 V bus applications; limited to ≤15 V rails due to 20 V absolute max rating.	Select when operating strictly below 15 V and prioritizing lowest possible R_DS(on) at 3.3 V drive.
AO3400	30 V V_DS, 42 mΩ R_DS(on) at 10 V, SOT23 - lower R_DS(on) but higher Q_G(tot) (17 nC) and slower switching (t_f = 15 ns).	Higher gate charge increases driver complexity and switching loss above 500 kHz; less suitable for high-frequency load switching.	Select when conduction loss dominates design and switching frequency is <200 kHz; avoid for >1 MHz PWM.

Compared with DMN2004LK-7 and AO3400, PMV90EN,215 offers balanced performance: sufficient 30 V rating for 24 V systems, competitive 70 mΩ R_DS(on), ultra-low 2.6 nC gate charge for high-frequency efficiency, and proven logic-level compatibility-making it optimal for space-constrained, medium-power, fast-switching low-side applications.

Availability

PMV90EN,215 is available at Aetrix Electronics and suitable for relay drivers, high-speed line drivers, low-side load switches, and switching power supply sync rectifiers requiring stable component supply across industrial automation, test equipment, and embedded power designs.

Supply support for PMV90EN,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products division, with focus on automotive, industrial, computing, and consumer markets.

The PMV90EN,215 belongs to Nexperia's TrenchMOS portfolio, engineered specifically for high-efficiency, low-footprint, logic-compatible power switching in space- and thermally-constrained applications.

FAQ

What is the maximum continuous drain current for PMV90EN,215 at 100 °C ambient temperature?

The PMV90EN,215 supports 1.2 A continuous drain current at T_amb = 100 °C with V_GS = 10 V, per limiting values table. This derating reflects thermal constraints of the SOT23 package; actual current capability depends on PCB copper area and airflow. For sustained 1.9 A operation, ambient must remain ≤60 °C with 6 cm² drain pad.

Is PMV90EN,215 suitable for driving a 24 V relay coil?

Yes, PMV90EN,215 is rated for 30 V V_DS, providing 6 V margin above 24 V relay coils. With typical R_DS(on) of 70 mΩ, power dissipation at 1.9 A is ~253 mW - within its 455 mW limit when mounted on a 6 cm² PCB pad. Its 1.5 V V_GS(th) ensures reliable turn-on from 3.3 V or 5 V control signals.

What is the gate charge profile of PMV90EN,215 and how does it affect drive requirements?

The PMV90EN,215 has Q_G(tot) = 2.6 nC (typ), Q_GS = 0.42 nC, and Q_GD = 0.34 nC. This low total charge enables efficient switching with minimal gate driver current - e.g., 1 mA average drive sustains 400 kHz operation. The low Q_GD/Q_G(tot) ratio also improves hard-switching efficiency and reduces Miller-induced shoot-through risk.

Does PMV90EN,215 include an integrated body diode, and what are its specifications?

Yes, PMV90EN,215 features an inherent source-drain body diode with V_SD = 0.7 V (typ) at I_S = 0.5 A and T_j = 25 °C. It supports up to 0.5 A continuous forward current and 7.6 A peak pulsed current (I_DM). This diode enables freewheeling in inductive loads and reverse-current protection in load-switch configurations.

How does the thermal resistance of PMV90EN,215 vary with PCB layout, and what is the recommended copper area?

PMV90EN,215's R_th(j-a) ranges from 240 K/W (with 6 cm² drain pad) to 400 K/W (standard SOT23 footprint). Nexperia specifies 6 cm² tin-plated copper for the drain pad to achieve the 455 mW P_tot rating. Reducing pad area to 1 cm² increases R_th(j-a) to ~350 K/W, limiting safe continuous current to ~1.3 A at 25 °C ambient.

PMV90EN,215 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 1.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 84mOhm @ 1.9A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 4 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 132 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 310mW (Ta), 2.09W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23 (TO-236AB)

PMV90EN,215 FAQ

1.How can I place an order for PMV90EN,215 through Aetrix?

Please submit a Request for Quotation (RFQ) for PMV90EN,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMV90EN,215 reliable?

The price and inventory of PMV90EN,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMV90EN,215 is usually 5 days.

3.What payment methods are accepted for PMV90EN,215?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMV90EN,215 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMV90EN,215?

PMV90EN,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMV90EN,215 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMV90EN,215?

For technical support, including PMV90EN,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMV90EN,215 requirements.

6.How does Aetrix verify that PMV90EN,215 is sourced from the original manufacturer or authorized distributors?

All PMV90EN,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMV90EN,215 meets industry standards.

7.What is the process for return or replacement of PMV90EN,215?

All PMV90EN,215 units undergo pre-shipment inspection (PSI). If there is an issue with PMV90EN,215, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMV90EN,215 part is unused and in its original packaging.

Return procedure for PMV90EN,215:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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