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Nexperia USA Inc. PMX700ENZ

Part No.:
PMX700ENZ
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
0201 (0603 Metric)
Datasheet:
AetrixPMX700ENZ.pdf
Description:
PMX700ENZ
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:25,883

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Product details

Overview

PMX700ENZ from Nexperia is a 60 V, N-channel enhancement-mode Trench MOSFET in a leadless DFN0603-3 (SOT8013) package, designed for ultra-compact low-side load switching. It delivers 0.3 A continuous drain current at 25 °C, exhibits 680 mΩ typical RDS(on) at VGS = 10 V and ID = 0.4 A, and supports logic-level gate drive down to 2.2 V - enabling direct interface with 3.3 V microcontrollers in battery-powered portable electronics.

For engineers reviewing the PMX700ENZ datasheet, PMX700ENZ pinout, PMX700ENZ application, or PMX700ENZ equivalent, this device is selected for space-constrained, low-power switching roles where thermal performance under FR4 mounting (Rth(j-a) = 360 K/W), sub-1 mm² footprint, and fast switching (td(off) = 7 ns) are critical design criteria.

Technical Context

This MOSFET uses Trench technology to achieve low RDS(on) and high transconductance (gfs = 1.1 S) while maintaining tight VGS(th) control (1.0–2.5 V). Its gate charge profile (QG(tot) = 0.7–1.1 nC) and low Ciss (39 pF) support efficient high-frequency switching up to several MHz in DC-DC and signal routing applications.

The device operates across –55 °C to 150 °C junction temperature, with normalized RDS(on) rising to ~2.2× at 150 °C. Its source-drain diode has VSD = 0.8–1.2 V at IS = 0.33 A, supporting bidirectional current handling in certain load-switch configurations.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 60 V - maximum blocking voltage for battery switch and line driver applications up to 48 V systems
RDS(on) 680 mΩ typ @ VGS = 10 V, ID = 0.4 A - enables <100 mW conduction loss at 0.3 A, critical for thermal management on FR4 PCBs
VGS(th) 1.8 V typ - ensures reliable turn-on with 2.5–3.3 V logic outputs without external level shifting
QG(tot) 0.9 nC typ - minimizes gate drive power and supports >1 MHz PWM in compact power stages
Ciss 39 pF - reduces capacitive loading on driving ICs and improves signal integrity in high-speed line drivers
td(off) 7 ns - enables fast turn-off for precise timing control in synchronous rectification and pulse-width modulation
Ptot 300 mW @ Tamb = 25 °C - defines safe continuous power dissipation on standard FR4 with single-sided copper

Pinout & Package

DFN0603-3 (SOT8013) is a leadless, ultra-small surface-mount package measuring 0.63 mm × 0.33 mm × 0.25 mm with 0.225 mm pitch and exposed drain pad for thermal conduction.

Pin/Terminal Circuit Role Design Meaning
1 G (Gate) Control terminal; accepts logic-level input (2.2–10 V); requires <100 nA leakage current at VGS = ±20 V
2 S (Source) Reference node for gate drive and current return path; tied to system ground in low-side switch configuration
3 D (Drain) High-side connection point; electrically and thermally connected to exposed bottom pad for enhanced heat dissipation

Key Features

Feature Design Value
Logic-level gate drive Operates fully enhanced at VGS ≥ 2.2 V - eliminates need for gate driver ICs in 3.3 V MCU-based designs
Ultra-small footprint 0.63 mm × 0.33 mm area - saves >70% board space vs. SOT23-3, enabling dense wearable and IoT PCB layouts
Trench MOSFET architecture Delivers 1.1 S forward transconductance and low 39 pF Ciss - improves gain stability and switching efficiency
Low-profile construction 0.25 mm height - allows stacking under shields or integration into thin-profile modules (e.g., smart sensors, hearing aids)
Thermally optimized drain pad Exposed D-pad with Rth(j-sp) = 23–26.5 K/W - enables 4.7 W pulsed power handling when mounted on 1 cm² copper pad

Applications

Battery Protection Switch High-Speed Line Driver

Use Scenario: Isolating Li-ion battery packs during overvoltage/overtemperature events in portable medical devices.

IC Role / Device Role / Timing Role: Low-side load switch controlling battery discharge path; activated within <10 µs of fault detection.

Use Value: 680 mΩ RDS(on) limits voltage drop to <200 mV at 0.3 A, preserving battery runtime and enabling accurate voltage monitoring upstream.

Use Scenario: Driving differential clock signals between FPGA and memory in space-constrained edge AI accelerators.

IC Role / Device Role / Timing Role: Active termination switch toggling signal path impedance between 50 Ω and high-Z states.

Use Value: 7 ns td(off) and 4 ns tf ensure sub-10 ns edge transitions, minimizing jitter accumulation across multi-GHz serial links.

Low-Side Load Switch USB-C Power Path Control

Use Scenario: Enabling/disabling 5 V rail to USB peripherals in docking stations with strict size constraints.

IC Role / Device Role / Timing Role: Single N-channel switch replacing mechanical relays or larger MOSFETs in hot-swap circuits.

Use Value: 0.25 mm profile and 0.63 mm × 0.33 mm footprint allow placement directly beneath USB-C connectors, reducing trace inductance and EMI.

Use Scenario: Controlling VBUS power delivery path in USB-C sink devices supporting programmable power supply (PPS).

IC Role / Device Role / Timing Role: Bidirectional current-handling switch managing reverse current flow during dynamic voltage negotiation.

Use Value: Source-drain diode VSD = 0.8–1.2 V at 0.33 A enables controlled reverse conduction without external Schottky, simplifying PPS compliance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-side switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN10H7TFA RDS(on) = 450 mΩ @ VGS = 4.5 V; larger X2-DFN0603-3 (0.6 x 0.3 mm but 0.35 mm height) Lower on-resistance suits higher-current (0.5 A) loads but increases thermal mass and height Select when <500 mΩ RDS(on) is mandatory and 0.1 mm extra height is acceptable
AO3414 RDS(on) = 55 mΩ @ VGS = 10 V; SOT-23 package (3.0 x 1.4 mm), 5× larger footprint Higher current rating (4.2 A) and lower RDS(on), but incompatible with ultra-dense layouts Choose for prototyping or non-space-constrained designs requiring higher current headroom

Compared with DMN10H7TFA and AO3414, PMX700ENZ offers the smallest footprint and lowest profile among these three, trading off absolute RDS(on) for board-area savings and thermal compatibility with thin FR4 stacks - ideal when layout density and z-height dominate over milliohm-level conduction loss.

Availability

PMX700ENZ is available at Aetrix Electronics and suitable for battery protection switches, high-speed line drivers, and low-side load switches requiring stable component supply in high-mix, low-volume production for wearables, medical sensors, and portable instrumentation.

Supply support for PMX700ENZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert specializing in high-performance, energy-efficient components for automotive, industrial, and consumer electronics, with leadership in discrete devices and logic ICs.

PMX700ENZ belongs to Nexperia's TrenchMOS® low-voltage logic-level MOSFET product line, engineered specifically for space- and power-sensitive applications in portable and battery-operated systems.

FAQ

What is the maximum continuous drain current for PMX700ENZ at 100 °C ambient temperature?

The maximum continuous drain current is 0.2 A at Tamb = 100 °C, as specified in Table 5 (Limiting values) under "ID drain current" with VGS = 10 V. This derating reflects thermal limitations on standard FR4 PCBs with single-sided copper and no heatsink.

Does PMX700ENZ require a gate resistor for stable switching in 3.3 V MCU applications?

A gate resistor is recommended: 10–47 Ω limits peak gate current and suppresses ringing caused by trace inductance and QG/Ciss interaction. The device's 40 Ω typical gate resistance and 0.9 nC total gate charge make it compatible with standard GPIO drivers without external level shifters.

Can PMX700ENZ be used in avalanche-rated circuits?

No - the datasheet does not specify avalanche energy rating (EAS) or ruggedness testing. It is rated only for repetitive and single-pulse operation within SOA limits (Figure 3), and must be operated within VDS ≤ 60 V and ID ≤ 1.3 A peak to avoid permanent damage.

How is the drain terminal thermally connected in the DFN0603-3 package?

The drain is connected to an exposed metal pad on the underside of the package, which must be soldered to a ≥1 cm² copper pour on the PCB for optimal thermal performance. Thermal resistance drops from 360 K/W (junction-to-ambient, standard footprint) to 23 K/W (junction-to-solder-point) when using this pad.

PMX700ENZ Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
0201 (0603 Metric)
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
800mOhm @ 400mA, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
1.1 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
39 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
300mW (Ta), 4.7W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DFN0603-3 (SOT8013)

PMX700ENZ FAQ

1.How can I place an order for PMX700ENZ through Aetrix?

Please submit a Request for Quotation (RFQ) for PMX700ENZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMX700ENZ reliable?

The price and inventory of PMX700ENZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMX700ENZ is usually 5 days.

3.What payment methods are accepted for PMX700ENZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMX700ENZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMX700ENZ?

PMX700ENZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMX700ENZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMX700ENZ?

For technical support, including PMX700ENZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMX700ENZ requirements.

6.How does Aetrix verify that PMX700ENZ is sourced from the original manufacturer or authorized distributors?

All PMX700ENZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMX700ENZ meets industry standards.

7.What is the process for return or replacement of PMX700ENZ?

All PMX700ENZ units undergo pre-shipment inspection (PSI). If there is an issue with PMX700ENZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMX700ENZ part is unused and in its original packaging.

Return procedure for PMX700ENZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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