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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PMX800ENEZ

Name: PMX800ENEZ
Brand: Nexperia USA Inc.
SKU: PMX800ENEZ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PMX800ENEZ

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: 0201 (0603 Metric)

Datasheet:: PMX800ENEZ.pdf

Description:: PMX800ENEZ

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PMX800ENEZ from Nexperia is a 60 V, N-channel enhancement-mode Trench MOSFET in a leadless DFN0603-3 (SOT8013) package, designed for ultra-compact low-side load switching. It delivers R_DS(on) = 800 mΩ (typ.) at V_GS = 10 V and I_D = 0.4 A, supports logic-level drive (V_GS(th) = 1.6 V typ.), and features ESD protection >1 kV HBM - deployed in space-constrained battery management and portable electronics.

For engineers reviewing the PMX800ENEZ datasheet, PMX800ENEZ pinout, PMX800ENEZ application, or PMX800ENEZ equivalent, key selection criteria include its 0.63 mm × 0.33 mm footprint, thermal resistance R_th(j-sp) = 23 K/W, 60 V V_DS rating, sub-1 A continuous drain current capability, and compatibility with FR4 PCBs using standard 1 cm² drain pad layout.

Technical Context

This MOSFET uses Trench technology to achieve low gate charge (Q_G(tot) = 0.6 nC typ.) and fast switching (t_d(on) = 2 ns, t_f = 9 ns), enabling high-efficiency operation in DC-DC converter auxiliary switches and battery protection circuits. Its logic-level gate threshold (V_GS(th) = 1.6 V typ.) ensures reliable turn-on with 3.3 V microcontroller GPIOs.

The device operates across –55 °C to 150 °C junction temperature, with normalized R_DS(on) rising to ~2.1× at 150 °C. Thermal performance is optimized via solder-point conduction (R_th(j-sp) = 23 K/W), making it suitable for thermally constrained wearable and IoT edge nodes where heatsinking is impractical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage; supports 24 V industrial bus and 48 V PoE-powered systems with margin.
R_DS(on)	800 mΩ (typ.) at V_GS = 10 V, I_D = 0.4 A, T_j = 25 °C - Enables <100 mW conduction loss at 0.4 A, critical for battery runtime extension.
V_GS(th)	1.6 V (typ.) - Ensures full enhancement with 3.3 V logic; eliminates need for gate driver in low-power MCU-controlled switches.
Q_G(tot)	0.6 nC (typ.) - Reduces gate drive power and switching transition time, supporting >1 MHz PWM in compact DC-DC stages.
R_th(j-sp)	23 K/W - Enables 4.7 W power dissipation at T_sp = 25 °C; allows direct thermal coupling to PCB copper without external heatsink.
ESD Rating	>1 kV HBM - Provides robustness against handling discharge during automated SMT assembly and field-level electrostatic events.
I_D (cont)	0.5 A at T_amb = 25 °C - Rated for sustained load switching in USB-C PD accessories, sensor node power rails, and LED drivers.

Pinout & Package

Package: DFN0603-3 (SOT8013), leadless ultra-small surface-mount package measuring 0.63 mm × 0.33 mm × 0.25 mm with 0.225 mm pitch and exposed drain pad for thermal conduction.

Pin/Terminal	Circuit Role	Design Meaning
1	G (Gate)	Control terminal; accepts logic-level input (≤3.3 V); requires no level-shifting for direct MCU interface.
2	S (Source)	Reference node for gate drive; tied to system ground in low-side configuration; forms return path for load current.
3	D (Drain)	High-side connection to load; electrically and thermally connected to exposed bottom pad; must be routed to ≥1 cm² copper area.

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) = 1.6 V typ. enables direct 3.3 V GPIO control without external driver, reducing BOM count and board area.
Ultra-small DFN0603-3 footprint	0.63 mm × 0.33 mm body size saves >70% board space vs. SOT23, critical for hearing aids, smart tags, and miniaturized wearables.
Low R_th(j-sp)	23 K/W thermal resistance to solder point allows efficient heat transfer into PCB copper, eliminating need for thermal vias or heatsinks.
Trench MOSFET architecture	Delivers 0.6 nC total gate charge and 2 ns turn-on delay, supporting high-frequency switching in compact power management ICs.
ESD-hardened structure	HBM rating >1 kV ensures robustness during reflow soldering and post-assembly handling, improving manufacturing yield.

Applications

Battery Protection Switch

USB-C Power Path Control

Use Scenario: Isolating Li-ion battery from system during overvoltage, overtemperature, or deep-discharge conditions in portable medical devices.

IC Role / Device Role / Timing Role: Low-side load switch controlled by fuel gauge or protection IC; operates in static on/off mode with <1 µA leakage (I_DSS ≤ 1 µA).

Use Value: 800 mΩ R_DS(on) limits voltage drop to <400 mV at 0.5 A, preserving battery capacity; 0.25 mm profile avoids interference with stacked battery cells.

Use Scenario: Enabling/disabling VBUS power delivery between USB-C port and internal 5 V rail in portable monitors and docking stations.

IC Role / Device Role / Timing Role: Bidirectional power-path switch (with external diode or complementary FET); driven by USB PD controller GPIO with 3.3 V logic.

Use Value: Logic-level V_GS(th) ensures clean turn-on at 3.3 V; 60 V V_DS withstands transient surges up to ±20 V common in unshielded cables.

IoT Sensor Node Power Gating

Wearable LED Driver Switch

Use Scenario: Powering down BLE radio, environmental sensors, and ADC during sleep cycles in coin-cell–powered asset trackers.

IC Role / Device Role / Timing Role: High-side or low-side power switch sequenced by MCU; duty-cycled with 100 ms–10 s intervals.

Use Value: 1 µA max I_DSS prevents battery drain during 10-year shelf life; 0.63 mm × 0.33 mm footprint fits within 2.0 mm × 2.0 mm module outline.

Use Scenario: Driving RGB LEDs in smart earbuds and fitness bands where space and thermal budget are strictly limited.

IC Role / Device Role / Timing Role: Low-side constant-current switch modulated via PWM; handles peak currents up to 1.9 A (I_DM) for brief LED pulses.

Use Value: 9 ns fall time ensures sharp PWM edges for precise brightness control; 0.25 mm height avoids mechanical clash with curved earbud housings.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-side switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN10H015LPS-7	Higher V_DS (100 V), lower R_DS(on) (1.5 mΩ), larger DFN1006-3 (1.0 mm × 0.6 mm) package	Used in 48 V telecom power distribution; unsuitable for sub-2 mm² footprints	Select when higher voltage margin and lower conduction loss outweigh size constraints.
AO3400	SOT23-3 package (3.0 mm × 1.4 mm), R_DS(on) = 44 mΩ at 10 V, V_GS(th) = 1.7 V, no HBM rating specified	Common in legacy consumer power supplies; lacks documented ESD hardening	Choose only if board space permits larger package and ESD robustness is not required.

Compared with DMN10H015LPS-7 and AO3400, PMX800ENEZ uniquely balances ultra-miniaturization (0.63 mm × 0.33 mm), logic-level drive, and certified ESD protection - making it optimal for next-gen wearables and disposable medical sensors where volume, reliability, and footprint are co-constrained.

Availability

PMX800ENEZ is available at Aetrix Electronics and suitable for battery protection switches, USB-C power path control, IoT sensor node power gating, and wearable LED driver switches requiring stable component supply across high-mix, low-volume production runs.

Supply support for PMX800ENEZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, reliable discrete, logic, and MOSFET solutions for automotive, industrial, and mobile markets.

PMX800ENEZ belongs to Nexperia's TrenchMOS portfolio, engineered specifically for space- and power-constrained portable electronics - emphasizing minimal footprint, logic-level compatibility, and robust thermal performance on standard FR4 PCBs.

FAQ

Is PMX800ENEZ suitable for high-frequency PWM applications?

Yes. With t_d(on) = 2 ns, t_f = 9 ns, and Q_G(tot) = 0.6 nC (typ.), PMX800ENEZ supports PWM frequencies up to 2 MHz in low-duty-cycle LED dimming and DC-DC synchronous rectification. Its low C_iss (32 pF) and C_rss (2 pF) minimize switching losses and EMI generation in compact layouts.

What PCB layout practices maximize thermal performance?

Mount PMX800ENEZ on an FR4 board with ≥1 cm² tin-plated copper area connected directly to the exposed drain pad. Use ≥4 thermal vias (0.3 mm diameter, 0.8 mm pitch) under the pad to inner ground planes. Avoid solder mask over the pad and ensure stencil aperture matches the 0.145 mm × 0.145 mm land pattern per Nexperia's sot8013_fr footprint.

Does PMX800ENEZ require a gate resistor for stability?

A gate resistor is recommended for EMI suppression and ringing control. For typical 3.3 V GPIO drive, a 10 Ω series resistor limits dV/dt and dampens oscillation without degrading t_f below 12 ns. No pull-down resistor is needed due to low IGSS (<10 µA) and sufficient V_GS(th) margin against noise.

Can PMX800ENEZ replace AO3414 in existing designs?

No direct replacement. AO3414 is a 20 V, 4.2 A SOT23-3 MOSFET with R_DS(on) = 35 mΩ - incompatible in voltage rating and footprint. PMX800ENEZ targets different use cases: 60 V, 0.5 A, 0.63 mm × 0.33 mm. Substitution would require PCB redesign, gate drive reassessment, and thermal validation due to differing R_DS(on), package, and SOA.

PMX800ENEZ Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: 0201 (0603 Metric)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 500mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.1Ohm @ 400mA, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 1 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 32 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 300mW (Ta), 4.7W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DFN0603-3 (SOT8013)

PMX800ENEZ FAQ

1.How can I place an order for PMX800ENEZ through Aetrix?

Please submit a Request for Quotation (RFQ) for PMX800ENEZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMX800ENEZ reliable?

The price and inventory of PMX800ENEZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMX800ENEZ is usually 5 days.

3.What payment methods are accepted for PMX800ENEZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMX800ENEZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMX800ENEZ?

PMX800ENEZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMX800ENEZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMX800ENEZ?

For technical support, including PMX800ENEZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMX800ENEZ requirements.

6.How does Aetrix verify that PMX800ENEZ is sourced from the original manufacturer or authorized distributors?

All PMX800ENEZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMX800ENEZ meets industry standards.

7.What is the process for return or replacement of PMX800ENEZ?

All PMX800ENEZ units undergo pre-shipment inspection (PSI). If there is an issue with PMX800ENEZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMX800ENEZ part is unused and in its original packaging.

Return procedure for PMX800ENEZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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