Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. PMX800UPEZ

Part No.:
PMX800UPEZ
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
0201 (0603 Metric)
Datasheet:
AetrixPMX800UPEZ.pdf
Description:
PMX800UPE/SOT8013/DFN0603-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,111

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

PMX800UPEZ from Nexperia is a P-channel enhancement-mode Trench MOSFET in a leadless DFN0603-3 (SOT8013) package, designed for ultra-compact high-side load switching. It delivers −30 V drain-source voltage rating, 680 mΩ typical RDS(on) at VGS = −4.5 V and ID = −0.6 A, and ESD protection >2 kV HBM - enabling reliable battery-switching in space-constrained portable electronics.

For engineers reviewing the PMX800UPEZ datasheet, PMX800UPEZ pinout, PMX800UPEZ application, or PMX800UPEZ equivalent, this device is selected for low-threshold, low-profile power control where board area <0.21 mm² and thermal resistance to ambient ≤415 K/W are critical design constraints.

Technical Context

This MOSFET uses Trench technology to achieve low gate charge (QG(tot) = 1.4–2.1 nC) and fast switching (tr = 13 ns, tf = 31 ns), supporting high-speed line driving and efficient pulsed load control. Its −0.7 V typical gate threshold (VGS(th)) enables direct interfacing with 1.8 V and 2.5 V logic without level shifting.

The device features an integrated source-drain diode with VSD = −0.9 to −1.2 V at IS = −0.5 A and exhibits normalized RDS(on) drift of ≤1.5× from −55 °C to 150 °C - ensuring stable conduction across industrial temperature ranges.

Key Specifications

Parameter Value and Actual Design Meaning
VDS −30 V - supports rail-to-rail battery switching up to 30 V systems without breakdown risk
RDS(on) 680 mΩ (typ) at VGS = −4.5 V - limits I²R loss to <0.25 W at 0.6 A continuous current
VGS(th) −0.7 V (typ) - ensures full enhancement with 1.8 V GPIO, eliminating need for external level shifters
QG(tot) 1.4–2.1 nC - enables <50 ns total switching time with 6 Ω gate resistor, reducing dynamic losses
ESD HBM >2 kV - provides robust handling during SMT assembly and board-level integration
Tj(max) 150 °C - allows operation in sealed enclosures or thermally dense layouts without derating below 100 °C ambient

Pinout & Package

DFN0603-3 (SOT8013) package: 0.63 mm × 0.33 mm × 0.25 mm body, leadless, single-sided copper FR4 mounting pad (1 cm²), 0.225 mm pitch.

Pin/Terminal Circuit Role Design Meaning
1 G (Gate) Control terminal; accepts −0.7 V to −4.5 V logic for turn-on; requires <2.1 nC charge for full enhancement
2 S (Source) Reference node for gate drive; connects to system ground or higher-potential rail in high-side configuration
3 D (Drain) Power output terminal; soldered to 1 cm² copper pad to achieve Rth(j-a) = 360–415 K/W in free air

Key Features

Feature Design Value
Ultra-small footprint 0.21 mm² board area - fits within 0402 footprint envelopes, enabling PCB real estate savings in wearables and hearing aids
Low-profile height 0.25 mm max - compatible with stacked-flex assemblies and conformal coating processes without mechanical interference
Trench MOSFET architecture Enables 680 mΩ RDS(on) at −4.5 V while maintaining <100 pF Coss - balances conduction efficiency and switching speed
Integrated ESD protection >2 kV HBM - eliminates need for external TVS on gate line in consumer-grade portable designs

Applications

Battery Protection Switch High-Speed Line Driver

Use Scenario: Reverse-current blocking and over-discharge cutoff in Li-ion battery packs for Bluetooth earbuds.

IC Role / Device Role / Timing Role: High-side load switch controlling battery-to-system power path with <1 µs response to protection IC signals.

Use Value: 680 mΩ RDS(on) limits voltage drop to <0.4 V at 600 mA, preserving runtime; 0.25 mm profile avoids interference with battery cell stacking.

Use Scenario: Differential signal termination and enable/disable control in USB-C alternate mode display data lanes.

IC Role / Device Role / Timing Role: Fast-switching current sink/load switch toggling bias networks at >10 MHz.

Use Value: 13 ns rise / 31 ns fall times support clean edge transitions; low QG minimizes gate drive power in high-frequency toggling.

High-Side Load Switch Compact Power MUX

Use Scenario: Selective power routing to sensor modules in IoT edge nodes powered by dual-cell alkaline batteries (up to 3 V).

IC Role / Device Role / Timing Role: P-channel switch enabling zero-quiescent-current shutdown when gate is pulled high.

Use Value: −0.7 V VGS(th) ensures full turn-on with 1.8 V microcontroller GPIO; 1 µA IDSS prevents leakage-induced battery drain.

Use Scenario: Dual-input power selection (USB + coin cell) for always-on real-time clock circuits in smart thermostats.

IC Role / Device Role / Timing Role: OR-ing switch prioritizing main supply while isolating backup source during normal operation.

Use Value: Low RDS(on) asymmetry (<15% variation from 25 °C to 100 °C) ensures consistent voltage drop across both paths; 150 °C Tj(max) supports sealed enclosure operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN2020LFG-7 RDS(on) = 1.2 Ω (min) at VGS = −4.5 V; larger 1.0 mm × 0.6 mm DFN package Higher conduction loss; suitable only where board area >0.6 mm² is available Select if higher surge current (IDM = −4.5 A) is required and size penalty is acceptable
AO3415 VGS(th) = −1.0 to −2.5 V; RDS(on) = 50 mΩ (typ) but in larger SOT-23 package (2.9 mm × 1.6 mm) Requires ≥2.5 V logic for guaranteed turn-on; occupies 23× more board area Choose only if legacy SOT-23 footprint must be retained and lower RDS(on) justifies size increase

Compared with DMN2020LFG-7 and AO3415, PMX800UPEZ uniquely combines sub-1 Ω RDS(on), 0.25 mm profile, and −0.7 V threshold in a 0.21 mm² footprint - making it the sole option for next-generation miniaturized battery-powered devices requiring simultaneous low loss, low voltage drive, and extreme space efficiency.

Availability

PMX800UPEZ is available at Aetrix Electronics and suitable for battery protection switches, high-speed line drivers, high-side load switches, and compact power MUX circuits requiring stable component supply under tight PCB area constraints.

Supply support for PMX800UPEZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert specializing in high-performance, energy-efficient discrete and logic devices, with manufacturing rooted in process innovation and automotive-grade reliability standards.

The PMX800UPEZ belongs to Nexperia's ultra-small-signal MOSFET product line, engineered specifically for space-critical portable electronics where traditional SOT-23 or SC-70 packages cannot meet mechanical or thermal targets.

FAQ

What is the maximum continuous drain current for PMX800UPEZ at 100 °C ambient?

The maximum continuous drain current is −500 mA at Tamb = 100 °C, as specified in Table 5 (Limiting values). This derating reflects thermal limits of the DFN0603-3 package on standard FR4 PCB; using a 1 cm² drain pad improves power dissipation capability to 500 mW at 25 °C ambient.

Does PMX800UPEZ require external gate pull-up or pull-down resistors in high-side switch configurations?

Yes - a gate pull-up resistor (typically 10–100 kΩ to VIN) is required to ensure the MOSFET remains off when the driving GPIO is high-impedance or unpowered. The device has no internal gate termination; omitting the resistor risks undefined state during power sequencing or MCU reset.

Can PMX800UPEZ be used in automotive applications?

No - PMX800UPEZ is not AEC-Q200 qualified and lacks automotive-specific testing, qualification, or warranty coverage. Nexperia explicitly states in Section 15 that non-automotive qualified products are unsuitable for safety-critical or life-support systems, including automotive ECUs or ADAS modules.

How does the source-drain diode forward voltage affect reverse-current blocking performance?

The source-drain diode has VSD = −0.9 to −1.2 V at IS = −0.5 A, meaning it conducts in reverse-biased conditions when VDS exceeds this threshold. For true bidirectional blocking, external series diodes or complementary N-channel configurations are required - the intrinsic diode does not prevent reverse current flow in high-side switch topologies.

PMX800UPEZ Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
0201 (0603 Metric)
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
900mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Rds On (Max) @ Id, Vgs:
850mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
2.1 nC @ 4.5 V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
124 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
300mW (Ta), 4.7W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DFN0603-3 (SOT8013)

PMX800UPEZ FAQ

1.How can I place an order for PMX800UPEZ through Aetrix?

Please submit a Request for Quotation (RFQ) for PMX800UPEZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMX800UPEZ reliable?

The price and inventory of PMX800UPEZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMX800UPEZ is usually 5 days.

3.What payment methods are accepted for PMX800UPEZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMX800UPEZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMX800UPEZ?

PMX800UPEZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMX800UPEZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMX800UPEZ?

For technical support, including PMX800UPEZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMX800UPEZ requirements.

6.How does Aetrix verify that PMX800UPEZ is sourced from the original manufacturer or authorized distributors?

All PMX800UPEZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMX800UPEZ meets industry standards.

7.What is the process for return or replacement of PMX800UPEZ?

All PMX800UPEZ units undergo pre-shipment inspection (PSI). If there is an issue with PMX800UPEZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMX800UPEZ part is unused and in its original packaging.

Return procedure for PMX800UPEZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

PMX800UPEZ Tags

  • PMX800UPEZ
  • PMX800UPEZ PDF
  • PMX800UPEZ Datasheet
  • PMX800UPEZ Specifications
  • PMX800UPEZ Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. PMX800UPEZ
  • Buy PMX800UPEZ
  • PMX800UPEZ Price
  • PMX800UPEZ Distributor
  • PMX800UPEZ Supplier
  • PMX800UPEZ Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER