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Nexperia USA Inc. PMXB56ENZ

Part No.:
PMXB56ENZ
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
3-XDFN Exposed Pad
Datasheet:
AetrixPMXB56ENZ.pdf
Description:
MOSFET N-CH 30V 3.2A DFN1010D-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:333

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Product details

Overview

PMXB56ENZ from Nexperia is a 30 V, N-channel enhancement-mode Trench MOSFET in a DFN1010D-3 (SOT1215) package, designed for low-side switching in space-constrained portable electronics. It delivers RDS(on) = 49 mΩ at VGS = 10 V and ID = 3.2 A, supports fast switching (tr = 12 ns, tf = 2 ns), and features an exposed drain pad for thermal conduction in battery-powered LED drivers and DC-DC converters.

For engineers reviewing the PMXB56ENZ datasheet, PMXB56ENZ pinout, PMXB56ENZ application, or PMXB56ENZ equivalent, this device is selected for ultra-compact load switching where low on-resistance, thermal efficiency, and sub-1 mm² footprint are critical - especially in USB-C power delivery paths, smart battery protection circuits, and high-frequency synchronous buck stages.

Technical Context

This MOSFET uses Trench technology to achieve low gate charge (QG(tot) = 3.6–6.3 nC) and high transconductance (gfs = 13 S), enabling efficient gate drive with minimal controller overhead. Its 0.37 mm profile and side-wettable flanks support automated optical inspection and reliable reflow soldering on dense PCBs.

The device operates within –55 °C to 150 °C junction temperature range, with normalized RDS(on) rising to 1.8× at Tj = 150 °C. Thermal resistance from junction to solder point is 10–15 K/W, confirming suitability for thermally demanding, unheatsinked layouts typical in wearables and IoT edge nodes.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 30 V - Maximum blocking voltage for 12–24 V system rails and USB PD 3.0 auxiliary power paths
RDS(on) 49 mΩ @ VGS = 10 V, ID = 3.2 A - Enables <150 mW conduction loss at 3.2 A, reducing thermal stress in sealed enclosures
QG(tot) 3.6–6.3 nC - Low gate charge allows direct drive from GPIO or low-power microcontrollers without external buffer
tr/tf 12 ns / 2 ns - Supports >5 MHz switching in compact DC-DC regulators without excessive EMI filtering
Rth(j-sp) 10–15 K/W - Confirmed thermal path to PCB copper enables >8 W power dissipation with 6 cm² drain pad per datasheet test condition
VGS(th) 1.0–2.0 V - Ensures turn-on compatibility with 1.8 V and 3.3 V logic, supporting low-voltage battery monitoring systems
Ciss/Coss 209 pF / 50 pF - Low input/output capacitance minimizes switching losses and improves light-load efficiency

Pinout & Package

PMXB56ENZ is housed in a leadless, thermally enhanced DFN1010D-3 (SOT1215) package measuring 1.1 × 1.0 × 0.37 mm, with an exposed drain pad for direct thermal coupling to PCB copper. The package features side-wettable flanks to enable automated optical solder-joint inspection.

Pin/Terminal Circuit Role Design Meaning
1 G (Gate) Control terminal; accepts 1.0–20 V logic-level drive; low Ciss ensures minimal Miller effect during switching
2 S (Source) Reference node for gate drive and current return path; tied to ground or low-side shunt in load-switch configurations
3 & 4 D (Drain) Power output node; electrically and thermally connected to exposed bottom pad; dual-terminal layout reduces current crowding

Key Features

Feature Design Value
Trench MOSFET architecture Enables 49 mΩ RDS(on) in 1.1 × 1.0 mm footprint - 35% lower on-resistance than planar equivalents at same die size
Exposed drain pad Reduces Rth(j-sp) to 10–15 K/W - enables >2× higher continuous current vs. standard DFN1006 packages under identical PCB layout
Side-wettable flanks Supports AOI-based solder-joint verification - eliminates X-ray inspection requirement in high-volume portable manufacturing
Low QGD/QGS ratio 0.4 nC / 0.5 nC - minimizes Miller plateau duration, improving hard-switching robustness in synchronous rectifiers

Applications

USB-C Power Delivery Switch Smart Battery Protection Circuit

Use Scenario: Bidirectional 5–20 V load switching in USB-C port controllers with overcurrent and short-circuit response.

IC Role / Device Role / Timing Role: Low-side switch controlling power path between source and sink; turns off within 100 ns of fault detection.

Use Value: 49 mΩ RDS(on) limits voltage drop to <160 mV at 3.2 A, preserving bus voltage margin for PD negotiation.

Use Scenario: Isolation of Li-ion cell packs during charging/discharging to prevent reverse current and thermal runaway.

IC Role / Device Role / Timing Role: Primary discharge FET in protection IC reference design; handles up to 3.2 A continuous current.

Use Value: 15 A peak drain current rating supports surge handling during hot-plug events without latch-up.

White LED Backlight Driver Compact Synchronous Buck Converter

Use Scenario: Constant-current dimming control for 3–6 LED strings in ultra-thin tablets and foldable displays.

IC Role / Device Role / Timing Role: PWM-controlled low-side switch modulating LED current at 1–5 kHz; rated for 100% duty cycle.

Use Value: 0.37 mm height avoids interference with display flex cables; 12 ns rise time ensures clean dimming waveform edges.

Use Scenario: High-efficiency 3.3 V/2 A output stage in wearable PMIC subsystems with tight board area constraints.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; switches at 2–4 MHz with minimal dead-time loss.

Use Value: 2 ns fall time and 50 pF Coss reduce turn-off energy loss by 40% vs. comparable 1212-package MOSFETs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-side switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN2004LK-7 RDS(on) = 52 mΩ @ 4.5 V; larger DFN1212 package (1.2 × 1.2 mm); no side-wettable flanks Lacks AOI-compatible terminations; requires X-ray for solder validation in volume production Preferred only when legacy DFN1212 footprint reuse is mandatory and thermal margin exceeds 1.5×
AO3414 RDS(on) = 55 mΩ @ 10 V; SOT-23 package; Rth(j-a) = 271 K/W - 2.7× higher thermal resistance Unsuitable for >1 A continuous operation without heatsinking due to poor thermal conduction Only viable for prototyping or low-duty-cycle signal switching where board area is unconstrained

Compared with DMN2004LK-7 and AO3414, PMXB56ENZ provides superior thermal performance per unit area and manufacturability assurance via side-wettable flanks - making it the optimal choice for production-grade portable designs requiring both miniaturization and reliability.

Availability

PMXB56ENZ is available at Aetrix Electronics and suitable for USB-C power delivery modules, smart battery management systems, LED backlight drivers, and compact DC-DC converters requiring stable component supply across multi-year consumer electronics product lifecycles.

Supply support for PMXB56ENZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in advanced packaging and automotive-qualified components.

PMXB56ENZ belongs to Nexperia's TrenchMOS portfolio - engineered specifically for space- and thermally constrained portable power management, emphasizing ultra-small footprints, low RDS(on), and process-validated manufacturability.

FAQ

What is the maximum continuous drain current for PMXB56ENZ at 100 °C ambient?

The datasheet specifies ID = 2.8 A at Tamb = 100 °C with FR4 PCB mounting (single-sided copper, 6 cm² drain pad). This reflects derating due to thermal resistance; actual current depends on board layout and airflow. No internal current limiting is present - external protection must be implemented.

Can PMXB56ENZ be driven directly from a 1.8 V GPIO?

Yes - its VGS(th) range (1.0–2.0 V) ensures turn-on at 1.8 V, but RDS(on) rises significantly below 4.5 V. At VGS = 1.8 V, RDS(on) exceeds 200 mΩ, limiting usable current to ~0.5 A. For full 3.2 A capability, ≥4.5 V drive is required.

Is the DFN1010D-3 package compatible with standard reflow profiles?

Yes - Nexperia provides validated reflow footprint and profile guidance (J-STD-020-compliant). Peak temperature ≤260 °C, with 60-second exposure above 217 °C. Side-wettable flanks ensure solder fillet formation visible under AOI, eliminating need for X-ray inspection.

Does PMXB56ENZ include integrated ESD protection?

No - the datasheet does not specify HBM or CDM ESD ratings. External TVS or RC filtering is recommended on gate and drain lines in handheld applications subject to user interface contact. Gate oxide is rated for ±20 V VGS, but transient overvoltage can cause latent damage.

PMXB56ENZ Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
3-XDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
55mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
6.3 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
209 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
400mW (Ta), 8.33W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DFN1010D-3

PMXB56ENZ FAQ

1.How can I place an order for PMXB56ENZ through Aetrix?

Please submit a Request for Quotation (RFQ) for PMXB56ENZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMXB56ENZ reliable?

The price and inventory of PMXB56ENZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMXB56ENZ is usually 5 days.

3.What payment methods are accepted for PMXB56ENZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMXB56ENZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMXB56ENZ?

PMXB56ENZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMXB56ENZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMXB56ENZ?

For technical support, including PMXB56ENZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMXB56ENZ requirements.

6.How does Aetrix verify that PMXB56ENZ is sourced from the original manufacturer or authorized distributors?

All PMXB56ENZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMXB56ENZ meets industry standards.

7.What is the process for return or replacement of PMXB56ENZ?

All PMXB56ENZ units undergo pre-shipment inspection (PSI). If there is an issue with PMXB56ENZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMXB56ENZ part is unused and in its original packaging.

Return procedure for PMXB56ENZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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