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NXP Semiconductors PMXB65ENE,147
- Part No.:
- PMXB65ENE,147
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- 3-XDFN Exposed Pad
- Datasheet:
-
PMXB65ENE,147.pdf
- Description:
- NOW NEXPERIA PMXB65ENE - SMALL S
- Quantity:
- Payment:
- Shipping:
Inventory:2,082
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Product details
Overview
PMXB65ENE from Nexperia is a 30 V, N-channel enhancement-mode Trench MOSFET in a leadless DFN1010D-3 (SOT1215) package, delivering RDS(on) = 44 mΩ at VGS = 10 V and ID = 3.2 A, with ESD protection rated at 1 kV, optimized for low-side switching in portable power management.
For engineers reviewing the PMXB65ENE datasheet, PMXB65ENE pinout, PMXB65ENE application, or PMXB65ENE equivalent, this page provides verified thermal resistance values (Rth(j-sp) = 10–15 K/W), gate charge metrics (QG(tot) = 6–11 nC), and junction temperature derating curves to support compact battery-powered design validation.
Technical Context
This MOSFET employs Trench MOSFET technology to achieve low on-resistance and fast switching performance in an ultra-thin 1.1 × 1.0 × 0.37 mm footprint. Its exposed drain pad enables direct thermal conduction to PCB copper, supporting Ptot = 8.33 W at Tsp = 25 °C.
The device features a gate threshold voltage of 1.4 V (typ), sub-2 V turn-on capability, and robust safe operating area (SOA) up to 12.8 A peak drain current (tp ≤ 10 µs). Dynamic parameters include Ciss = 295 pF and tr/tf = 12 ns/3 ns under standard test conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V maximum - supports 24 V rail and transient margin in portable DC systems |
| RDS(on) | 44 mΩ typ at VGS = 10 V, ID = 3.2 A - enables <100 mW conduction loss at 3.2 A |
| QG(tot) | 6–11 nC - determines gate drive energy and switching speed in high-frequency DC-DC stages |
| Rth(j-sp) | 10–15 K/W - defines thermal path efficiency from junction to solder point on FR4 PCB |
| VGS(th) | 1.4 V typ - ensures reliable turn-on with 1.8 V or 3.3 V logic-level gate drivers |
| ID (cont) | 3.2 A at Tamb = 25 °C - usable continuous current with standard 6 cm² drain pad |
| ESD rating | 1 kV HBM - provides built-in protection against handling discharge without external TVS |
Pinout & Package
PMXB65ENE uses the DFN1010D-3 (SOT1215) package: leadless, ultra-thin (0.37 mm height), 1.1 × 1.0 mm body size, with exposed drain pad for thermal conduction. Pin 1 = Gate (G), Pin 2 = Source (S), Pins 3 & 4 = Drain (D) - dual-drain configuration improves current handling and thermal spreading.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Control input; requires ≤10 V drive; RG = 1 Ω internal gate resistance limits ringing |
| 2 | Source (S) | Reference node for gate drive; tied to ground or low-side return path in load switch |
| 3 & 4 | Drain (D) | Power output terminal; electrically and thermally connected to exposed pad; dual pins reduce current density |
Key Features
| Feature | Design Value |
|---|---|
| Trench MOSFET architecture | Enables 44 mΩ RDS(on) in 1.1 × 1.0 mm footprint - critical for space-constrained portable PCBs |
| Exposed drain pad | Reduces Rth(j-sp) to 10–15 K/W - allows >8 W dissipation with minimal heatsinking |
| 1 kV HBM ESD protection | Eliminates need for external ESD diodes in handheld charging circuits |
| Low VGS(th) (1.4 V typ) | Ensures full enhancement with 1.8 V microcontroller GPIO - no level-shifting required |
| Ultra-thin 0.37 mm profile | Supports stacking in multi-layer wearable modules and slim USB-C PD accessories |
Applications
| Portable Load Switching | Battery Charging Control |
|---|---|
|
Use Scenario: Low-side power switch enabling/disabling power to peripherals (e.g., USB OTG accessory, sensor array) in smartphones and wearables. IC Role / Device Role: N-channel MOSFET configured as low-side switch, driven directly by 1.8 V or 3.3 V MCU GPIO. Use Value: 44 mΩ RDS(on) limits voltage drop to <140 mV at 3.2 A, preserving battery runtime and minimizing self-heating in sealed enclosures. |
Use Scenario: Charging path switch isolating battery from input during USB or wireless charging in Bluetooth earbuds and smartwatches. IC Role / Device Role: Reverse-blocking low-side switch controlling charge current flow into Li-ion cell. Use Value: 30 V VDS rating accommodates 20 V QC/PD inputs with safety margin; 1 kV ESD withstand prevents latch-up during hot-plug events. |
| LED Current Regulation | DC-DC Converter Synchronous Rectification |
|
Use Scenario: Constant-current LED driver stage in compact indicator lighting for medical devices and IoT sensors. IC Role / Device Role: Low-side current sink modulated via PWM from MCU or dedicated LED controller. Use Value: Fast 12 ns rise time and 3 ns fall time enable clean PWM dimming up to 1 MHz without shoot-through risk. |
Use Scenario: Synchronous rectifier in buck converter output stage for portable power banks and USB-C PD adapters. IC Role / Device Role: Secondary-side switch replacing Schottky diode to improve efficiency at 3–5 A loads. Use Value: 295 pF Ciss and 6–11 nC QG(tot) allow efficient 1–2 MHz operation with minimal gate drive loss. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel low-side switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2004LKQ-7 | RDS(on) = 38 mΩ (typ) at VGS = 4.5 V; larger TSOP-6 package (3.05 × 1.6 mm); higher QG = 13 nC | Better low-voltage drive but requires more PCB area and higher gate drive energy | Choose DMN2004LKQ-7 only if 4.5 V gate drive is mandatory and board space permits larger footprint. |
| AO3414 | RDS(on) = 52 mΩ (typ) at VGS = 10 V; SOT-23 package; Rth(j-a) = 271–312 K/W - significantly poorer thermal performance | Limited to <1 A continuous current on standard FR4 due to thermal constraints | Select AO3414 only for cost-sensitive, low-power (<500 mA), non-thermal-critical prototypes where DFN assembly is unavailable. |
Compared with DMN2004LKQ-7 and AO3414, PMXB65ENE delivers superior thermal efficiency (Rth(j-sp) ≤15 K/W), smallest footprint (1.1 × 1.0 mm), and optimal balance of RDS(on), QG, and ESD robustness for production-grade portable power switches.
Availability
PMXB65ENE is available at Aetrix Electronics and suitable for portable load switching, battery charging control, LED driver circuits, and DC-DC synchronous rectification requiring stable component supply across high-volume consumer electronics programs.
Supply support for PMXB65ENE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in MOSFETs, ESD protection, and automotive-qualified components.
The PMXB65ENE belongs to Nexperia's TrenchMOS family, engineered specifically for space- and thermally constrained battery-powered applications where ultra-small size, low RDS(on), and robust ESD tolerance are essential.
FAQ
What is the maximum continuous drain current for PMXB65ENE at 100 °C ambient temperature?
The PMXB65ENE supports 2.5 A continuous drain current at Tamb = 100 °C when mounted on an FR4 PCB with single-sided copper and tin-plated mounting pad for drain (6 cm²). This value reflects thermal derating per Figure 3 in the datasheet and assumes proper layout with full exposure of the drain pad to copper pour.
Does PMXB65ENE require external gate resistors for typical 1.8 V MCU drive?
No, PMXB65ENE does not require external gate resistors when driven by 1.8 V or 3.3 V MCUs, as its VGS(th) = 1.4 V (typ) ensures full enhancement and its internal gate resistance of 1 Ω sufficiently damps ringing. External resistors may be added only for fine-tuning switching speed in noise-sensitive environments.
Can PMXB65ENE be used in a high-side switch configuration?
No, PMXB65ENE is an N-channel MOSFET and is not suitable for high-side switching without a gate-boost circuit. It is designed and characterized exclusively for low-side configurations where source is referenced to ground or common return, as confirmed in the "General description" and "Applications" sections of the datasheet.
What is the thermal resistance from junction to solder point (Rth(j-sp)) for PMXB65ENE?
The PMXB65ENE has a junction-to-solder-point thermal resistance of 10–15 K/W, measured with the device mounted on an FR4 PCB using standard footprint and tin-plated copper. This value enables effective heat transfer from the exposed drain pad directly into the PCB, supporting up to 8.33 W total power dissipation at Tsp = 25 °C.
Is PMXB65ENE automotive qualified?
No, PMXB65ENE is not automotive qualified. The datasheet explicitly states "Non-automotive qualified products" in Section 15 and confirms it is neither tested nor warranted for automotive use. It is intended for consumer portable electronics, industrial handhelds, and general-purpose power management where AEC-Q101 qualification is not required.
PMXB65ENE,147 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- 3-XDFN Exposed Pad
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 67mOhm @ 3.2A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 295 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 400mW (Ta), 8.33W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DFN1010D-3
PMXB65ENE,147 FAQ
1.How can I place an order for PMXB65ENE,147 through Aetrix?
Please submit a Request for Quotation (RFQ) for PMXB65ENE,147 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMXB65ENE,147 reliable?
The price and inventory of PMXB65ENE,147 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMXB65ENE,147 is usually 5 days.
3.What payment methods are accepted for PMXB65ENE,147?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMXB65ENE,147 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMXB65ENE,147?
PMXB65ENE,147 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMXB65ENE,147 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMXB65ENE,147?
For technical support, including PMXB65ENE,147 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMXB65ENE,147 requirements.
6.How does Aetrix verify that PMXB65ENE,147 is sourced from the original manufacturer or authorized distributors?
All PMXB65ENE,147 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMXB65ENE,147 meets industry standards.
7.What is the process for return or replacement of PMXB65ENE,147?
All PMXB65ENE,147 units undergo pre-shipment inspection (PSI). If there is an issue with PMXB65ENE,147, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMXB65ENE,147 part is unused and in its original packaging.
Return procedure for PMXB65ENE,147:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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