NXP Semiconductors PMZ1000UN,315
- Part No.:
- PMZ1000UN,315
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
PMZ1000UN,315.pdf
- Description:
- NEXPERIA PMZ1000UN - SMALL SIGNA
- Quantity:
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Inventory:10,633,200
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Product details
Overview
PMZ1000UN from Nexperia is a standard-level N-channel enhancement-mode TrenchMOS FET in SOT883 (SC-101) package, designed for low-voltage switching in space-constrained portable electronics. It delivers 480 mA continuous drain current at VGS = 10 V, exhibits 1 Ω RDS(on) at VGS = 4.5 V and ID = 0.2 A, and supports 30 V drain-source voltage - enabling compact load switching in battery-powered devices.
For engineers reviewing the PMZ1000UN datasheet, PMZ1000UN pinout, PMZ1000UN application, or PMZ1000UN equivalent, this page provides verified technical context, validated pin functions, confirmed thermal and dynamic parameters, and real-world use cases in portable appliance power management and driver circuits - all aligned with Nexperia's official product data sheet Rev. 2 (2010).
Technical Context
This N-channel MOSFET uses TrenchMOS technology to achieve low on-resistance and fast switching performance in an ultra-small leadless package. Its gate threshold voltage ranges from 0.45 V to 0.95 V at 25 °C, enabling reliable turn-on with low-voltage logic drivers, and it maintains stable RDS(on) up to 150 °C junction temperature.
The device features integrated source-drain diode with 0.76 V forward voltage at 0.3 A, supports pulsed peak drain current up to 1.8 A, and offers ESD robustness of 60 V HBM - making it suitable for handheld and wearables where board area, thermal efficiency, and electrostatic resilience are critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V maximum - defines safe operating voltage ceiling for low-voltage DC loads like LED drivers or sensor power rails. |
| ID (continuous) | 480 mA at Tamb = 25 °C, VGS = 10 V - supports moderate-current switching without external heatsinking in FR4 PCB layouts. |
| RDS(on) | 1 Ω max at VGS = 4.5 V, ID = 0.2 A, Tj = 25 °C - enables efficient conduction with <100 mW I²R loss under typical bias conditions. |
| QG(tot) | 0.89 nC typical - ensures rapid gate charging with minimal drive strength, reducing switching transition time and associated losses. |
| VGS(th) | 0.45–0.95 V at Tj = 25 °C - allows direct interfacing with 1.8 V or 3.3 V microcontroller GPIOs without level-shifting circuitry. |
| Rth(j-sp) | 50 K/W - indicates thermal path efficiency from junction to solder point, critical for predicting local PCB temperature rise in high-density layouts. |
Pinout & Package
SOT883 (SC-101) is a leadless ultra-small plastic package measuring 1.0 × 0.6 × 0.5 mm, optimized for minimal PCB footprint and low profile - 90% smaller and 55% lower than SOT23.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Control terminal; requires ≤±8 V gate-source voltage; low input capacitance (43 pF Ciss) eases driving from low-power logic. |
| 2 | Source (S) | Reference node for gate control and current return path; tied to system ground in low-side switch configurations. |
| 3 | Drain (D) | Power output terminal; connects to load; supports bidirectional current flow via integrated source-drain diode (VSD = 0.76 V). |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-compact SOT883 package | 1.0 × 0.6 × 0.5 mm body size saves >90% PCB area vs. SOT23 - essential for wearable and hearing aid designs. |
| TrenchMOS low RDS(on) | 1 Ω max at 4.5 V drive enables efficient 3.3 V logic-compatible switching with sub-100 mW conduction loss at 300 mA. |
| Low gate charge (0.89 nC) | Reduces switching energy and gate driver burden - supports >1 MHz PWM operation with minimal overshoot in compact DC-DC stages. |
| ESD robustness (60 V HBM) | Meets ANSI/ESD S20.20 requirements - eliminates need for external ESD protection in final assembly of consumer handhelds. |
| Wide junction temp range | Rated for −55 °C to +150 °C operation - supports reliability in thermally aggressive environments like enclosed battery packs. |
Applications
| Portable Power Switching | LED Driver Control |
|---|---|
|
Use Scenario: Enabling/disabling power to Bluetooth earbud subsystems during sleep/wake cycles. IC Role / Device Role / Timing Role: Low-side load switch controlled by MCU GPIO; handles 300–400 mA peak current during audio playback. Use Value: 1 Ω RDS(on) limits dropout to <400 mV at 400 mA, preserving battery runtime; SOT883 footprint fits within tight 2.5 mm × 2.5 mm module constraints. |
Use Scenario: Pulse-width modulated current control for white LEDs in smartwatch displays. IC Role / Device Role / Timing Role: Constant-current sink switch synchronized to MCU PWM output at 1–5 kHz. Use Value: 0.89 nC QG(tot) ensures clean, fast edge transitions with minimal gate drive power; 0.76 V VSD minimizes forward drop in current-sense path. |
| USB Peripheral Power Gating | IoT Sensor Node Enable |
|
Use Scenario: Isolating USB-connected accessories (e.g., OTG flash drives) to prevent back-powering host devices. IC Role / Device Role / Timing Role: High-side or low-side isolation switch placed between VBUS and peripheral VDD rail. Use Value: 30 V VDS rating safely accommodates USB 2.0/3.0 transient spikes; ±8 V VGS limit prevents gate oxide stress during hot-plug events. |
Use Scenario: Power cycling environmental sensors (e.g., humidity, temperature) in battery-operated asset trackers. IC Role / Device Role / Timing Role: Standby-mode power switch activated only during measurement bursts every 10–60 seconds. Use Value: 1 μA IDSS leakage at 25 °C extends multi-year battery life; 0.45 V VGS(th) ensures reliable turn-on from weak-battery MCU outputs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel low-voltage switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN1021UCB-7 | Higher RDS(on) (1.4 Ω @ 4.5 V), same SOT883 package, 20 V VDS rating. | Limited to ≤20 V systems; less margin for USB or Li-ion battery transients. | Choose when cost sensitivity outweighs voltage headroom needs and 1.4 Ω conduction loss is acceptable. |
| AO3414 | SOT23-3 package (3.0 × 1.4 × 1.1 mm), 20 V VDS, 0.045 Ω RDS(on) @ 4.5 V. | Requires 5× more PCB area; better for higher-current, lower-voltage apps where space is not constrained. | Select when higher current (up to 4 A) and lower on-resistance justify larger footprint and thermal mass. |
Compared with DMN1021UCB-7 and AO3414, the PMZ1000UN uniquely balances 30 V capability, 1 Ω RDS(on), and ultra-miniature SOT883 packaging - making it optimal for space-limited, battery-powered 3–5 V systems requiring robust transient tolerance and low standby leakage.
Availability
PMZ1000UN is available at Aetrix Electronics and suitable for portable power switching, LED driver control, USB peripheral gating, and IoT sensor node enable applications requiring stable component supply across high-mix, low-volume production runs.
Supply support for PMZ1000UN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products division - focused on automotive, industrial, computing, consumer, and wearable markets.
The PMZ1000UN belongs to Nexperia's standard-level TrenchMOS FET family, engineered specifically for compact, low-voltage switching in portable and battery-powered electronics where PCB area, thermal efficiency, and logic-level drive compatibility are critical.
FAQ
What is the maximum continuous drain current for PMZ1000UN at room temperature?
The PMZ1000UN supports a maximum continuous drain current of 480 mA at ambient temperature of 25 °C and VGS = 10 V, as specified in Table 1 of the official Nexperia datasheet Rev. 2. This rating assumes operation on a standard FR4 PCB with single-sided copper; derating applies above 25 °C ambient per Figure 1.
Does PMZ1000UN support logic-level gate drive from a 3.3 V microcontroller?
Yes, the PMZ1000UN has a gate-source threshold voltage (VGS(th)) ranging from 0.45 V to 0.95 V at 25 °C, and its RDS(on) is guaranteed at VGS = 4.5 V. While full enhancement occurs at 4.5 V, the low VGS(th) ensures reliable turn-on with 3.3 V GPIOs - though RDS(on) will be higher than the 1 Ω spec value.
What is the thermal resistance from junction to solder point for PMZ1000UN?
The PMZ1000UN has a maximum thermal resistance of 50 K/W from junction to solder point (Rth(j-sp)), measured on an FR4 PCB with single-sided copper and standard footprint. This parameter is critical for estimating local temperature rise at the solder joint during pulsed or continuous operation.
Is PMZ1000UN qualified for automotive applications?
No, the PMZ1000UN is explicitly designated for computing, communications, consumer, and industrial applications only - not automotive qualified. The datasheet states it is "not suitable for automotive use" and lacks AEC-Q101 qualification, high-temperature lifetime testing, or automotive-specific reliability screening.
What package type does PMZ1000UN use, and how does it compare to SOT23?
The PMZ1000UN uses the SOT883 (SC-101) package - a leadless ultra-small plastic package measuring 1.0 × 0.6 × 0.5 mm. Compared to standard SOT23, it occupies 90% less PCB area and has 55% lower profile, enabling integration into ultra-thin portable and wearable devices where board space is severely constrained.
PMZ1000UN,315 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
PMZ1000UN,315 FAQ
1.How can I place an order for PMZ1000UN,315 through Aetrix?
Please submit a Request for Quotation (RFQ) for PMZ1000UN,315 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMZ1000UN,315 reliable?
The price and inventory of PMZ1000UN,315 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMZ1000UN,315 is usually 5 days.
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Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMZ1000UN,315?
For technical support, including PMZ1000UN,315 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMZ1000UN,315 requirements.
6.How does Aetrix verify that PMZ1000UN,315 is sourced from the original manufacturer or authorized distributors?
All PMZ1000UN,315 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMZ1000UN,315 meets industry standards.
7.What is the process for return or replacement of PMZ1000UN,315?
All PMZ1000UN,315 units undergo pre-shipment inspection (PSI). If there is an issue with PMZ1000UN,315, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMZ1000UN,315 part is unused and in its original packaging.
Return procedure for PMZ1000UN,315:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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