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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PMZ290UNYL

Name: PMZ290UNYL
Brand: Nexperia USA Inc.
SKU: PMZ290UNYL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PMZ290UNYL

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-101, SOT-883

Datasheet:: PMZ290UNYL.pdf

Description:: MOSFET DFN1006-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PMZ290UNYL from NXP Semiconductors is a single N-channel enhancement-mode Trench MOSFET in an ultra-small DFN1006-3 (SOT883) package, rated for 20 V drain-source voltage, 1 A continuous drain current at 25 °C, and 290 mΩ typical R_DS(on) at V_GS = 4.5 V and I_D = 200 mA - optimized for low-side load switching in space-constrained portable electronics.

For engineers reviewing the PMZ290UNYL datasheet, PMZ290UNYL pinout, PMZ290UNYL application, or PMZ290UNYL equivalent, key selection criteria include its 0.48 mm profile height, low 0.7 V gate threshold, fast 4.5 ns turn-on delay, and thermal resistance of 305 K/W (junction-to-ambient on FR4), critical for thermally sensitive battery-powered designs.

Technical Context

This device uses Trench MOSFET technology to achieve low R_DS(on) and fast switching with minimal gate charge (0.89 nC total). Its gate-source threshold voltage (0.45–0.95 V) enables direct drive from 1.8 V logic, while the integrated source-drain diode supports bidirectional current handling in relay and line driver configurations.

The SOT883 package features a 1.0 × 0.6 × 0.48 mm body with exposed drain pad for thermal conduction, and its limiting values specify 20 V V_DS, ±8 V V_GS, and 150 °C maximum junction temperature - validated under standard FR4 PCB mounting conditions with 1 cm² drain pad.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - maximum blocking voltage for low-voltage DC power path switching
R_DS(on)	290 mΩ typ @ V_GS = 4.5 V, I_D = 200 mA - ensures <100 mW conduction loss at 500 mA load
V_GS(th)	0.7 V typ - enables reliable turn-on from 1.8 V microcontroller GPIO without level shifting
Q_G(tot)	0.89 nC - supports >1 MHz PWM operation with low gate drive power requirement
t_d(on)	4.5 ns - reduces switching transition time, minimizing overlap losses in high-frequency loads
P_tot	360 mW @ T_amb = 25 °C - defines maximum steady-state power dissipation on standard FR4 PCB
R_th(j-a)	305 K/W - quantifies thermal bottleneck for ambient-cooled operation in sealed enclosures

Pinout & Package

DFN1006-3 (SOT883) package: leadless, ultra-thin 1.0 × 0.6 × 0.48 mm body with exposed drain pad; requires reflow-compatible footprint per Figure 19 (solder land dimensions: 0.7 × 0.3 mm for pins 1/2, 0.9 × 0.4 mm for pin 3).

Pin/Terminal	Circuit Role	Design Meaning
1	G (Gate)	Control terminal; accepts 0–4.5 V logic-level drive; 0.1 µA leakage max at ±8 V
2	S (Source)	Reference node for gate drive and current return path; tied to system ground in low-side configuration
3	D (Drain)	High-current output terminal; electrically and thermally connected to exposed copper pad for heat dissipation

Key Features

Feature	Design Value
Ultra-thin profile	0.48 mm height - enables use in <1 mm Z-height consumer wearables and hearing aids
Low V_GS(th)	0.45–0.95 V - eliminates need for gate driver IC when interfacing with 1.8 V/2.5 V MCUs
Trench MOSFET architecture	290 mΩ R_DS(on) at 4.5 V - delivers 3× lower conduction loss vs. planar MOSFETs in same package
Fast switching	4.5 ns t_d(on), 10 ns t_r - supports efficient 2 MHz DC-DC converter synchronous rectification
Thermal performance	40 K/W R_th(j-sp) - enables >70% of junction heat to transfer directly to PCB copper via drain pad

Applications

Relay Driver

High-Speed Line Driver

Use Scenario: Replacing electromechanical relays in IoT sensor nodes to reduce size, bounce, and power consumption.

IC Role / Device Role / Timing Role: Low-side switch controlling coil current; operates in DC on/off mode with <10 µs response.

Use Value: Eliminates mechanical wear and 100 ms settling delay; enables battery life extension via 0.1 µA gate leakage.

Use Scenario: Driving 50 Ω transmission lines in USB 2.0 or MIPI D-PHY interfaces within mobile camera modules.

IC Role / Device Role / Timing Role: Active termination switch toggling between 50 Ω match and high-Z states during data bursts.

Use Value: 10 ns rise time ensures signal integrity up to 480 Mbps; 0.48 mm height avoids interference with lens barrels.

Low-Side Loadswitch

Switching Circuit

Use Scenario: Power gating peripheral subsystems (e.g., Bluetooth radio, display backlight) in smartwatches.

IC Role / Device Role / Timing Role: Controlled power path switch activated by PMIC or MCU GPIO; handles 300–800 mA loads.

Use Value: 290 mΩ R_DS(on) limits voltage drop to <240 mV at 800 mA, preserving battery runtime and regulation margin.

Use Scenario: Building compact buck converter high-side switches or half-bridge legs in portable LED drivers.

IC Role / Device Role / Timing Role: Synchronous rectifier or main switch operating at 500 kHz–2 MHz with 0.89 nC gate charge.

Use Value: Low Q_G and fast t_f (5 ns) minimize switching losses, enabling >92% efficiency in 3.3 V input designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LK-7	R_DS(on) = 200 mΩ @ 4.5 V (lower), but 0.65 mm height (35% taller); Q_G = 1.4 nC (57% higher)	Better conduction loss, but incompatible with <0.5 mm Z-height constraints; requires larger gate drive current	Select when R_DS(on) dominates over board space and gate drive capability is available
AO3400	SOT-23 package (3.0 × 1.4 × 1.1 mm); R_DS(on) = 28 mΩ @ 10 V (not 4.5 V); V_GS(th) = 0.8–1.5 V (higher threshold)	Requires 3.3 V+ logic drive; unsuitable for 1.8 V systems; 5× larger footprint limits density	Choose only if existing SOT-23 layout exists and 10 V gate drive is guaranteed

Compared with DMN2004LK-7 and AO3400, PMZ290UNYL uniquely balances sub-0.5 mm height, 1.8 V logic compatibility, and 290 mΩ R_DS(on) - making it the sole option for space- and voltage-constrained low-power switching where thermal resistance below 350 K/W is required.

Availability

PMZ290UNYL is available at Aetrix Electronics and suitable for portable medical sensors, wireless earbud power management, and compact industrial IoT controllers requiring stable component supply across multi-year production cycles.

Supply support for PMZ290UNYL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer markets.

PMZ290UNYL belongs to NXP's TrenchMOS portfolio - engineered specifically for ultra-compact, low-voltage power switching in battery-powered edge devices where board area and thermal headroom are severely constrained.

FAQ

What is the maximum continuous drain current for PMZ290UNYL at 100 °C ambient temperature?

The maximum continuous drain current is 0.6 A at T_amb = 100 °C, as specified in Table 5 (Limiting Values) under "ID drain current" with V_GS = 4.5 V. This derating reflects thermal limitations of the SOT883 package on standard FR4 PCB with 1 cm² drain pad, not device degradation.

Can PMZ290UNYL be used with 1.8 V GPIO without a level shifter?

Yes. With a typical V_GS(th) of 0.7 V and maximum of 0.95 V, PMZ290UNYL fully turns on at 1.8 V gate drive, delivering 290 mΩ R_DS(on). The datasheet confirms operation down to V_GS = 1.8 V in Figure 9, where R_DS(on) remains ≤650 mΩ at I_D = 75 mA and T_j = 25 °C.

What is the safe operating area (SOA) limitation at 10 V V_DS for continuous operation?

At V_DS = 10 V, the continuous safe operating current is approximately 0.8 A (Figure 3, curve "DC; Tamb = 25 °C; drain mounting pad 1 cm²"). This limit is defined by thermal saturation, not avalanche or secondary breakdown, and assumes proper PCB copper area and airflow.

How does the source-drain diode forward voltage affect reverse-current protection in loadswitch applications?

The source-drain diode has V_SD = 0.75–1.2 V at I_S = 300 mA (Table 7), meaning it conducts in reverse direction when V_S > V_D. In loadswitch configurations, this allows back-powering from downstream circuits unless external blocking diodes or ideal diode controllers are added.

PMZ290UNYL Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-101, SOT-883

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: 1A (Tj)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-883

PMZ290UNYL FAQ

1.How can I place an order for PMZ290UNYL through Aetrix?

Please submit a Request for Quotation (RFQ) for PMZ290UNYL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMZ290UNYL reliable?

The price and inventory of PMZ290UNYL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMZ290UNYL is usually 5 days.

3.What payment methods are accepted for PMZ290UNYL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMZ290UNYL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMZ290UNYL?

PMZ290UNYL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMZ290UNYL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMZ290UNYL?

For technical support, including PMZ290UNYL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMZ290UNYL requirements.

6.How does Aetrix verify that PMZ290UNYL is sourced from the original manufacturer or authorized distributors?

All PMZ290UNYL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMZ290UNYL meets industry standards.

7.What is the process for return or replacement of PMZ290UNYL?

All PMZ290UNYL units undergo pre-shipment inspection (PSI). If there is an issue with PMZ290UNYL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMZ290UNYL part is unused and in its original packaging.

Return procedure for PMZ290UNYL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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