Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PMZ760SN,315

Name: PMZ760SN,315
Brand: Nexperia USA Inc.
SKU: PMZ760SN,315
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: PMZ760SN,315

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-101, SOT-883

Datasheet:: PMZ760SN,315.pdf

Description:: MOSFET N-CH 60V 1.22A DFN1006-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:8,189

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

PMZ760SN,315 from NXP Semiconductors is an N-channel enhancement-mode TrenchMOS FET in a leadless SOT883 (SC-101) package, designed for low-voltage load switching in space-constrained portable electronics. It delivers V_DS = 60 V, I_D = 1.22 A at 10 V_GS, R_DS(on) = 760 mΩ (typ.) at 10 V_GS, P_tot = 2.50 W, and features standard-level gate threshold (V_GS(th) = 1–3 V) for direct microcontroller drive.

For engineers reviewing the PMZ760SN,315 datasheet, PMZ760SN,315 pinout, PMZ760SN,315 application, or PMZ760SN,315 equivalent, key selection criteria include its ultra-small footprint (1.0 × 0.6 × 0.5 mm), low R_DS(on) at 4.5 V_GS (1100–1600 mΩ), ESD robustness (95 V HBM), fast switching (t_r = 4 ns), and thermal resistance R_th(j-sp) = 50 K/W for solder-point-limited PCB designs.

Technical Context

This device employs TrenchMOS technology to achieve low on-resistance and fast switching in a leadless SC-101 package. Its standard-level gate threshold enables direct interfacing with 3.3 V and 5 V logic without level-shifting, while its 95 V HBM ESD rating supports handling in portable assembly lines.

The FET operates within −55 °C to +150 °C junction temperature range and exhibits stable R_DS(on) up to 150 °C (1400–1665 mΩ at 10 V_GS). Its SOA is defined for DC, pulsed (10 µs), and repetitive conditions, with peak drain current I_DM = 2.44 A and V_(BR)DSS = 60 V minimum at 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V maximum - supports 24 V and 36 V rail switching with margin against transients
I_D (continuous)	1.22 A at T_mb = 25 °C - suitable for moderate-current loads like LED drivers or sensor power rails
R_DS(on)	760 mΩ typical at V_GS = 10 V - ensures <1 V drop at 1.2 A, minimizing conduction loss
V_GS(th)	1–3 V at 25 °C - compatible with 3.3 V GPIO for direct logic-level drive
Q_G(tot)	1.05 nC - enables fast turn-on with low gate-drive energy, reducing switching loss
C_iss	23 pF - contributes to low capacitive loading on driving MCU pins
R_th(j-sp)	50 K/W - defines thermal performance when mounted on small PCB copper pads

Pinout & Package

SOT883 (SC-101) is a leadless ultra-small plastic package with three solder lands and dimensions 1.0 × 0.6 × 0.5 mm. It requires reflow-compatible footprint per MBL873 specification and is sensitive to ESD (95 V HBM).

Pin/Terminal	Circuit Role	Design Meaning
1	Gate (G)	Control input; accepts standard-level logic (1–3 V threshold); requires ESD-safe handling
2	Source (S)	Reference node for gate drive; connected to system ground or low-side return path
3	Drain (D)	Switched output terminal; carries load current up to 1.22 A continuous; connects to positive rail or load

Key Features

Feature	Design Value
Ultra-compact footprint	90 % smaller than SOT23 - enables high-density routing in wearables and hearing aids
Low R_DS(on) at 4.5 V_GS	1100–1600 mΩ - ensures reliable turn-on from 3.3 V microcontrollers without gate boosting
Fast switching	t_r = 4 ns, t_f = 2.2 ns - reduces transition losses in PWM-driven loads
ESD robustness	95 V HBM - eliminates need for external protection in handheld assembly environments
TrenchMOS architecture	Optimized cell layout - achieves lower on-resistance per die area vs planar MOSFETs

Applications

Smartphone Power Management

Wireless Earbud Battery Protection

Use Scenario: Enabling/disabling auxiliary power rails (e.g., camera module, NFC, or haptic driver) under MCU control.

IC Role / Device Role / Timing Role: Low-side load switch controlling 3.3 V/5 V subsystems with minimal voltage drop and fast enable/disable timing.

Use Value: 760 mΩ R_DS(on) limits voltage loss to <0.9 V at 1.2 A, preserving battery runtime; 1.05 nC Q_G allows sub-microsecond switching.

Use Scenario: Isolating charging circuitry from battery during sleep mode to prevent leakage current.

IC Role / Device Role / Timing Role: High-efficiency, low-leakage (1 µA max at 25 °C) disconnect switch in Li-ion battery path.

Use Value: 1 µA IDSS at 25 °C and 100 µA at 150 °C ensure <1 µA standby drain; SC-101 size fits tight earbud PCB real estate.

Wearable Sensor Hub

USB-C Peripheral Power Switching

Use Scenario: Sequencing power to MEMS sensors (accelerometer, gyroscope) only when active to reduce system quiescent current.

IC Role / Device Role / Timing Role: Logic-level-controlled power gate enabling precise power domain control via I²C-connected MCU.

Use Value: Standard-level V_GS(th) (1–3 V) eliminates level shifter; 4.5 V_GS R_DS(on) of 1100–1600 mΩ ensures full turn-on from 3.3 V I/O.

Use Scenario: Controlling VBUS power delivery to USB-C accessories in host devices (e.g., docking stations).

IC Role / Device Role / Timing Role: Low-R_DS(on) high-side or low-side switch managing up to 1.22 A at 5 V with minimal thermal rise.

Use Value: R_th(j-sp) = 50 K/W enables thermal management on small pads; 60 V V_DS headroom accommodates USB PD transient spikes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN10H750LKQ-7	R_DS(on) = 750 mΩ @ 4.5 V_GS; SOT-723 package (1.2 × 0.8 mm); higher capacitance (C_iss = 40 pF)	Larger footprint; higher gate charge increases MCU drive burden	Preferred where slightly lower R_DS(on) justifies 33 % larger board area
AO3400	R_DS(on) = 40 mΩ @ 10 V_GS; SOT-23 package (3.0 × 1.4 mm); V_GS(th) = 0.7–1.4 V	Significantly larger size; lower threshold risks unintended turn-on with noise	Chosen when higher current (5.7 A) and lower R_DS(on) outweigh space constraints

Compared with DMN10H750LKQ-7 and AO3400, PMZ760SN,315 uniquely balances ultra-miniature size (1.0 × 0.6 mm), standard-level gate compatibility, and sufficient R_DS(on) for ≤1.2 A loads-making it optimal for space- and ESD-sensitive portable systems where gate drive simplicity is critical.

Availability

PMZ760SN,315 is available at Aetrix Electronics and suitable for smartphone power management, wireless earbud battery protection, wearable sensor hub sequencing, and USB-C peripheral power switching requiring stable component supply across high-mix, low-volume production runs.

Supply support for PMZ760SN,315 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer applications.

PMZ760SN,315 belongs to NXP's TrenchMOS discrete FET product line, engineered specifically for compact, battery-powered devices requiring logic-level drive, low leakage, and high reliability in ultra-small packages.

FAQ

Is PMZ760SN,315 suitable for high-side switching configurations?

No-PMZ760SN,315 is an N-channel FET optimized for low-side switching. High-side use would require gate voltage above the source (i.e., >V_DD), which this part lacks integrated charge pump or bootstrap capability. Its gate threshold and R_DS(on) are specified for source-referenced drive only.

What is the maximum recommended PCB copper pad size for thermal performance?

The datasheet specifies thermal resistance R_th(j-sp) = 50 K/W assuming mounting on a standard solder point per Figure 4. For optimal thermal performance, use the MBL873-recommended reflow footprint: 0.60 mm × 0.70 mm solder lands with 0.30 mm solder resist opening-larger pads offer diminishing returns due to the leadless package's limited heat-spreading path.

Does PMZ760SN,315 include integrated ESD protection diodes?

No-it has no internal ESD protection diodes. Its 95 V HBM rating reflects inherent process-level robustness, not added clamping structures. External TVS or RC filtering is recommended if exposed to >95 V transients, especially in handheld device interfaces subject to user contact discharge.

Can PMZ760SN,315 operate reliably at 150 °C junction temperature?

Yes-its absolute maximum T_j is +150 °C, and electrical characteristics are guaranteed across −55 °C to +150 °C. At 150 °C, R_DS(on) rises to 1400–1665 mΩ (vs. 760 mΩ at 25 °C), and I_D derates to 0.77 A at 10 V_GS. Thermal design must ensure T_j stays within limit using R_th(j-sp) = 50 K/W and measured solder point temperature.

PMZ760SN,315 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: SC-101, SOT-883

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 1.22A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 900mOhm @ 300mA, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 1.05 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 23 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-883

PMZ760SN,315 FAQ

1.How can I place an order for PMZ760SN,315 through Aetrix?

Please submit a Request for Quotation (RFQ) for PMZ760SN,315 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMZ760SN,315 reliable?

The price and inventory of PMZ760SN,315 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMZ760SN,315 is usually 5 days.

3.What payment methods are accepted for PMZ760SN,315?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMZ760SN,315 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMZ760SN,315?

PMZ760SN,315 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMZ760SN,315 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMZ760SN,315?

For technical support, including PMZ760SN,315 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMZ760SN,315 requirements.

6.How does Aetrix verify that PMZ760SN,315 is sourced from the original manufacturer or authorized distributors?

All PMZ760SN,315 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMZ760SN,315 meets industry standards.

7.What is the process for return or replacement of PMZ760SN,315?

All PMZ760SN,315 units undergo pre-shipment inspection (PSI). If there is an issue with PMZ760SN,315, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMZ760SN,315 part is unused and in its original packaging.

Return procedure for PMZ760SN,315:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…