NXP Semiconductors PMZ950UPEYL

Overview

PMZ950UPEYL from Nexperia is a P-channel enhancement-mode Trench MOSFET in a DFN1006-3 (SOT883) package, rated for -20 V drain-source voltage, 1.02 Ω R_DS(on) at V_GS = -4.5 V and I_D = -500 mA, and featuring ESD protection >1 kV HBM. It serves as a high-side load switch or relay driver in space-constrained portable electronics.

For engineers reviewing the PMZ950UPEYL datasheet, PMZ950UPEYL pinout, PMZ950UPEYL application, or PMZ950UPEYL equivalent, key selection criteria include its ultra-small 1.0 × 0.6 × 0.48 mm footprint, guaranteed R_DS(on) performance across temperature, gate threshold voltage range (-0.45 to -0.95 V), and thermal resistance to ambient (305 K/W on FR4).

Technical Context

This discrete P-channel MOSFET uses Trench technology to achieve low on-resistance in an ultra-miniature leadless package. Its gate threshold voltage (V_GS(th)) is specified between -0.45 V and -0.95 V at 25 °C, enabling reliable turn-on with low-voltage logic-level control.

The device supports continuous drain current up to -500 mA at 25 °C ambient and -300 mA at 100 °C ambient, with peak pulse current capability of -2 A. Its dynamic characteristics include 1.19–2.1 nC total gate charge and 43 pF input capacitance, supporting fast switching in high-speed line driver applications.

Key Specifications

Pinout & Package

PMZ950UPEYL is housed in a leadless DFN1006-3 (SOT883) plastic package measuring 1.0 × 0.6 × 0.48 mm, with exposed drain pad for thermal conduction. The package has three solder lands on the bottom surface and requires reflow-compatible footprint per Figure 19 in the datasheet.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Compared with DMN2020LFG-7 and AO3415, PMZ950UPEYL delivers the smallest footprint and lowest R_DS(on) among these three -20 V P-channel options, making it optimal for new designs targeting minimal PCB area and low conduction loss - though its DFN1006-3 requires updated stencil and reflow profile versus SOT-23.

Availability

PMZ950UPEYL is available at Aetrix Electronics and suitable for portable medical devices, wearable sensors, and battery management systems requiring stable component supply and long-term production continuity.

Supply support for PMZ950UPEYL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency-enhancing components, delivering high-performance, reliable, and scalable solutions for automotive, industrial, and consumer markets.

The PMZ950UPEYL belongs to Nexperia's TrenchMOS family of small-signal P-channel MOSFETs, engineered specifically for ultra-compact high-side switching and load management in battery-powered portable electronics.

FAQ

What is the maximum continuous drain current for PMZ950UPEYL at 100 °C ambient temperature?

The PMZ950UPEYL supports -300 mA continuous drain current at T_amb = 100 °C when mounted on an FR4 PCB with single-sided copper and tin-plated mounting pad for drain (1 cm²). This derating reflects thermal limitations rather than electrical failure, and the device remains fully functional within its -55 °C to +150 °C junction temperature range. Always verify actual board layout thermal performance using the normalized current curves in Figure 2 of the datasheet.

Does PMZ950UPEYL require a gate resistor for safe operation in a high-side switch configuration?

PMZ950UPEYL does not mandate an external gate resistor for basic on/off operation, but a 10–100 Ω series resistor is recommended to dampen ringing and control slew rate during switching transients. The device's 1.19–2.1 nC total gate charge and low output capacitance make it responsive to fast gate drives; however, uncontrolled edge rates can induce EMI or shoot-through in half-bridge configurations. Refer to the gate charge waveform definitions in Figure 15 for precise timing modeling.

Can PMZ950UPEYL be used with a 1.8 V microcontroller GPIO as the gate driver?

Yes, PMZ950UPEYL can be reliably driven by a 1.8 V microcontroller GPIO because its gate-source threshold voltage (V_GS(th)) ranges from -0.45 V to -0.95 V at 25 °C, ensuring turn-on well below -1.8 V. At V_GS = -1.8 V, R_DS(on) is typically 1.7 Ω (max 3.3 Ω), sufficient for ≤200 mA loads. For higher current or lower loss, use -2.5 V or -4.5 V drive; the PMZ950UPEYL datasheet confirms functionality down to V_GS = -1.2 V.

What is the thermal resistance from junction to solder point (R_th(j-sp)) for PMZ950UPEYL?

The thermal resistance from junction to solder point (R_th(j-sp)) for PMZ950UPEYL is 40 K/W, measured under standard conditions with the device mounted on an FR4 PCB having single-sided copper and tin-plated finish. This parameter is critical for estimating local temperature rise at the solder joint during pulsed operation and informs reflow profile validation. It is significantly lower than R_th(j-a) (305 K/W), confirming the effectiveness of the exposed drain pad in conducting heat into the PCB.

Is PMZ950UPEYL suitable for automotive applications?

No, PMZ950UPEYL is not automotive-qualified. The Nexperia datasheet explicitly states that unless otherwise indicated, products are "non-automotive qualified" and "not suitable for automotive use." It has not undergone AEC-Q101 stress testing or been validated for automotive temperature ranges, reliability requirements, or qualification protocols. For automotive high-side switching, select a formally AEC-Q101 qualified P-channel MOSFET with appropriate PPAP documentation.