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NXP Semiconductors PMZB200UNE315
- Part No.:
- PMZB200UNE315
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- SC-101, SOT-883
- Datasheet:
-
PMZB200UNE315.pdf
- Description:
- SMALL SIGNAL N-CHANNEL MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:4,063
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Product details
Overview
PMZB200UNE from Nexperia is a 30 V, N-channel enhancement-mode Trench MOSFET in a DFN1006B-3 (SOT883B) ultra-small surface-mount package, featuring 210 mΩ RDS(on) at VGS = 4.5 V, 1.4 A continuous drain current at 25 °C, and 2 kV HBM ESD protection - optimized for low-side load switching in space-constrained portable electronics.
For engineers reviewing the PMZB200UNE datasheet, PMZB200UNE pinout, PMZB200UNE application, or PMZB200UNE equivalent, key selection criteria include its 0.37 mm profile, gate threshold voltage of 0.7 V (typ), fast switching with 5 ns turn-on delay, and thermal resistance of 315 K/W (junction-to-ambient on FR4).
Technical Context
This N-channel MOSFET uses Trench technology to achieve low RDS(on) and fast switching performance while maintaining robust gate oxide integrity. Its 0.45–0.95 V gate threshold enables reliable operation with 1.8 V logic-level drive.
The device supports peak drain currents up to 5 A in pulsed mode and operates across –55 °C to 150 °C junction temperature. Its ultra-thin 0.37 mm package height and 1.0 × 0.6 mm footprint are engineered for high-density PCB layouts in battery-powered wearables and IoT sensor nodes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - maximum drain-source blocking voltage, suitable for 24 V rail and 12 V automotive auxiliary circuits |
| RDS(on) | 210 mΩ (typ) at VGS = 4.5 V, ID = 1.4 A - enables <100 mW conduction loss at 1 A, minimizing self-heating in compact layouts |
| VGS(th) | 0.7 V (typ) - ensures full enhancement with 1.8 V microcontroller GPIO, eliminating need for level shifters |
| QG(tot) | 2.7 nC (max) - supports >1 MHz switching in DC-DC converters without excessive gate drive power |
| Tj range | –55 °C to +150 °C - qualified for extended industrial and consumer ambient environments |
| ESD rating | 2 kV HBM - provides built-in handling robustness during SMT assembly and board handling |
| Ptot | 760 mW at Tamb = 25 °C (1 cm² drain pad) - defines practical power envelope for thermally unmanaged designs |
Pinout & Package
Package: DFN1006B-3 (SOT883B), leadless ultra-small plastic package; body dimensions 1.0 × 0.6 × 0.37 mm; 3 solder lands; drain-connected top-side thermal pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | G (Gate) | Control terminal; accepts 0–8 V logic input; low 2.7 nC total gate charge minimizes driver loading |
| 2 | S (Source) | Reference node for gate drive; tied to system ground in low-side configuration; forms cathode of intrinsic body diode |
| 3 | D (Drain) | Power output terminal; electrically and thermally connected to exposed copper pad; carries switched load current |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-thin profile | 0.37 mm height - enables use in <1 mm total stack-up assemblies such as smart badges and hearing aids |
| Trench MOSFET architecture | Enables 210 mΩ RDS(on) in 1.0 × 0.6 mm footprint - delivers higher current density than planar equivalents |
| Low VGS(th) | 0.45–0.95 V range - guarantees turn-on with 1.2 V supply rails, supporting next-generation ultra-low-power MCUs |
| Fast switching | 5 ns td(on), 10 ns tr, 3 ns tf - reduces switching losses in high-frequency PWM control up to 2 MHz |
| ESD protection | 2 kV HBM - eliminates need for external ESD clamps in handheld product front-end circuitry |
Applications
| Relay Driver | High-Speed Line Driver |
|---|---|
|
Use Scenario: Replacing electromechanical relays in compact PLC I/O modules and home automation controllers. IC Role / Device Role / Timing Role: Low-side switch controlling 12–24 V relay coils with 10–100 ms actuation timing. Use Value: Eliminates coil flyback diode requirement due to integrated body diode; 210 mΩ RDS(on) limits coil power dissipation to <25 mW at 500 mA. |
Use Scenario: Driving 50 Ω transmission lines in USB 2.0 data switches and HDMI hot-plug detection circuits. IC Role / Device Role / Timing Role: Fast-switching buffer enabling <10 ns edge transitions for signal integrity preservation. Use Value: 3 ns fall time and 10 ns rise time ensure minimal jitter; 89 pF Ciss avoids capacitive loading beyond specification limits. |
| Low-Side Loadswitch | Switching Circuits |
|
Use Scenario: Power gating for Bluetooth LE sensors and NFC tags in coin-cell–powered wearables. IC Role / Device Role / Timing Role: Loadswitch enabling <1 µA quiescent current and sub-100 ns enable response. Use Value: 1 µA IDSS leakage at 30 V ensures >1-year battery life; 0.7 V VGS(th) allows direct MCU GPIO control without bias resistors. |
Use Scenario: Synchronous rectification in miniature buck converters for portable medical devices. IC Role / Device Role / Timing Role: High-efficiency power switch operating at 500 kHz–1 MHz with forced-air cooling. Use Value: 347 mΩ RDS(on) at 150 °C maintains <150 mW conduction loss at full load; 315 K/W Rth(j-a) enables passive thermal management. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel low-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN10H015LPS-13 | RDS(on) = 15 mΩ @ VGS = 4.5 V; larger TSOP-6 package (3.05 × 1.65 mm); 1.5 A ID | Higher current capacity but 8× larger footprint - unsuitable for <2 mm² area budgets | Select when >1 A continuous current or lower RDS(on) is required and board space permits |
| AO3400 | RDS(on) = 44 mΩ @ VGS = 10 V; SO-8 package; VGS(th) = 0.8–1.5 V; no HBM rating specified | Requires 2.5 V+ logic drive; lacks ESD hardening - needs external protection in handhelds | Choose only for cost-sensitive, non-portable applications where gate drive voltage ≥2.5 V and ESD risk is low |
Compared with DMN10H015LPS-13 and AO3400, PMZB200UNE uniquely balances ultra-compact size, 1.8 V logic compatibility, and factory-rated ESD protection - making it the sole option for space- and voltage-constrained battery-powered systems requiring zero-additional-protection design.
Availability
PMZB200UNE is available at Aetrix Electronics and suitable for portable medical monitors, wireless sensor nodes, and compact industrial I/O modules requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for PMZB200UNE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors - delivering discrete, logic, and MOSFET solutions with industry-leading efficiency and miniaturization.
The PMZB200UNE belongs to Nexperia's TrenchMOS® low-voltage logic-level portfolio, designed specifically for space-constrained, battery-operated applications demanding minimal gate drive voltage and ultra-thin packaging.
FAQ
What is the maximum continuous drain current for PMZB200UNE at 100 °C ambient temperature?
The PMZB200UNE supports 0.9 A continuous drain current at Tamb = 100 °C with standard FR4 mounting (single-sided copper, 1 cm² drain pad). This derating reflects thermal limitations rather than electrical failure - junction temperature remains within the 150 °C absolute maximum when operated within this limit. The PMZB200UNE datasheet specifies this value in Table 5 under "ID drain current" conditions.
Does PMZB200UNE require a gate resistor for typical 3.3 V MCU switching applications?
No external gate resistor is required for basic on/off control with 3.3 V MCUs driving the PMZB200UNE gate, as its total gate charge is only 2.7 nC (max) and input capacitance is 89 pF. However, a 10–47 Ω series resistor is recommended to dampen ringing in high-speed PWM (>500 kHz) or high-di/dt load scenarios. The PMZB200UNE's low QG and fast switching make it inherently compatible with direct GPIO drive.
Can PMZB200UNE be used in a high-side switching configuration?
The PMZB200UNE is an N-channel MOSFET and is not suited for high-side switching without a gate-boost circuit, as its gate must be driven above the source potential. In high-side applications, a dedicated high-side driver IC or P-channel alternative (e.g., PMZB300UPE) is required. The PMZB200UNE's pinout and characteristics are explicitly optimized for low-side configurations per its datasheet Applications section.
What is the thermal resistance from junction to solder point (Rth(j-sp)) for PMZB200UNE?
The PMZB200UNE has a typical Rth(j-sp) of 17 K/W, measured from junction to solder point under standard reflow conditions. This parameter enables accurate transient thermal modeling when the device is mounted on a PCB with defined copper mass. The value is documented in Table 6 of the PMZB200UNE datasheet under "Thermal characteristics" and assumes proper solder joint formation to the DFN1006B-3 drain pad.
Is PMZB200UNE automotive-qualified?
No, the PMZB200UNE is not automotive-qualified. The official Nexperia datasheet states "Non-automotive qualified products" in Section 15.3 and confirms the device is neither tested nor warranted for automotive applications. For AEC-Q101 compliance, designers should select alternatives such as the NX3008PBK or PMZB300UPE-A, which carry explicit automotive qualification. The PMZB200UNE is intended for industrial, consumer, and portable electronics only.
PMZB200UNE315 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- SC-101, SOT-883
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 250mOhm @ 1.4A, 4.5V
- Vgs(th) (Max) @ Id:
- 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 2.7 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 89 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 350mW (Ta), 6.25W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DFN1006B-3
PMZB200UNE315 FAQ
1.How can I place an order for PMZB200UNE315 through Aetrix?
Please submit a Request for Quotation (RFQ) for PMZB200UNE315 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMZB200UNE315 reliable?
The price and inventory of PMZB200UNE315 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMZB200UNE315 is usually 5 days.
3.What payment methods are accepted for PMZB200UNE315?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMZB200UNE315 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMZB200UNE315?
PMZB200UNE315 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMZB200UNE315 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMZB200UNE315?
For technical support, including PMZB200UNE315 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMZB200UNE315 requirements.
6.How does Aetrix verify that PMZB200UNE315 is sourced from the original manufacturer or authorized distributors?
All PMZB200UNE315 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMZB200UNE315 meets industry standards.
7.What is the process for return or replacement of PMZB200UNE315?
All PMZB200UNE315 units undergo pre-shipment inspection (PSI). If there is an issue with PMZB200UNE315, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMZB200UNE315 part is unused and in its original packaging.
Return procedure for PMZB200UNE315:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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