Nexperia USA Inc. PMZB290UNE,315

Overview

PMZB290UNE,315 from Nexperia is a single N-channel enhancement-mode Trench MOSFET in a DFN1006B-3 (SOT883B) package, rated for 20 V drain-source voltage, 1 A continuous drain current at 25 °C, and 290 mΩ typical R_DS(on) at V_GS = 4.5 V. It serves as a low-side load switch or high-speed line driver in space-constrained portable electronics.

For engineers reviewing the PMZB290UNE,315 datasheet, PMZB290UNE,315 pinout, PMZB290UNE,315 application, or PMZB290UNE,315 equivalent, key selection criteria include its ultra-thin 0.37 mm profile, 2 kV HBM ESD rating, sub-1 V gate threshold, fast 6 ns turn-on delay, and thermal resistance of 150 K/W with 1 cm² drain pad - critical for thermally dense PCB layouts.

Technical Context

This MOSFET employs Trench MOSFET technology to achieve low on-resistance and fast switching, with a gate threshold voltage centered at 0.75 V and stable down to 0.5 V minimum - enabling direct drive from 1.8 V logic. Its dynamic characteristics include 0.45 nC total gate charge and 55 pF input capacitance, supporting efficient operation in high-frequency switching circuits.

The device features an integrated source-drain diode with 0.77 V typical forward voltage at 300 mA and is characterized across junction temperatures from −55 °C to 150 °C, with R_DS(on) increasing to 460 mΩ at 150 °C - confirming robustness in thermally demanding environments.

Key Specifications

Pinout & Package

DFN1006B-3 (SOT883B) is a 3-terminal, leadless, ultra-small surface-mount plastic package measuring 1.0 × 0.6 × 0.37 mm, with exposed drain pad for thermal conduction. The package uses standard reflow footprint per Figure 20 in the datasheet, requiring tin-plated copper mounting pad (1 cm²) for rated power dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage switching applications.

Compared with DMN1021UCB4-7 and AO3400A, PMZB290UNE,315 uniquely balances ultra-thin packaging, 1.8 V logic compatibility, and 290 mΩ on-resistance - making it optimal for height-sensitive, battery-operated designs where gate drive simplicity and thermal density are jointly constrained.

Availability

PMZB290UNE,315 is available at Aetrix Electronics and suitable for portable medical monitors, wireless sensor nodes, and ultra-thin consumer electronics requiring stable component supply and long-term manufacturability.

Supply support for PMZB290UNE,315 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-grade and industrial MOSFETs, ESD protection, and logic families.

PMZB290UNE,315 belongs to Nexperia's TrenchMOS portfolio - engineered specifically for space- and power-constrained portable electronics, emphasizing low-threshold drive, ultra-small packaging, and robust ESD immunity.

FAQ

What is the maximum continuous drain current for PMZB290UNE,315 at 100 °C ambient?

The maximum continuous drain current is 625 mA at T_amb = 100 °C with V_GS = 4.5 V, as specified in Table 5 (Limiting Values). This derating reflects thermal constraints of the DFN1006B-3 package on FR4 PCB with standard footprint - not a device failure limit, but a safe operating boundary for sustained conduction.

Does PMZB290UNE,315 require a heatsink for 360 mW power dissipation?

No external heatsink is required. At 360 mW, the device achieves thermal equilibrium with R_th(j-a) = 305 K/W (free air) or 150 K/W (with 1 cm² drain pad), resulting in ~55 °C junction rise above ambient - well within the 150 °C absolute max. Proper PCB copper layout suffices.

Can PMZB290UNE,315 be used in reverse polarity protection circuits?

No - it lacks body diode orientation for reverse polarity protection. As a standard N-channel MOSFET with source tied internally to substrate, it conducts only from drain to source when enhanced. Reverse protection requires P-channel topology or external diode placement.

Is the 2 kV ESD rating applicable to all pins or only gate?

The 2 kV Human Body Model (HBM) rating applies to all pins - gate, source, and drain - as confirmed in Table 5 (ESD maximum rating measured between all pins). This uniform rating simplifies ESD design for compact PCBs where all terminals may be exposed to handling.