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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PMZB370UNE,315

Name: PMZB370UNE,315
Brand: Nexperia USA Inc.
SKU: PMZB370UNE,315
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PMZB370UNE,315

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: -

Datasheet:: PMZB370UNE,315.pdf

Description:: NEXPERIA PMZB370UNE - SMALL SIGN

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PMZB370UNE,315 from Nexperia is a single N-channel enhancement-mode Trench MOSFET in a DFN1006B-3 (SOT883B) ultra-thin surface-mount package, rated for 30 V drain-source voltage, 900 mA continuous drain current at 25 °C, 370 mΩ typical R_DS(on) at V_GS = 4.5 V and I_D = 500 mA, and featuring 2 kV HBM ESD protection. It serves as a low-side load switch or high-speed line driver in space-constrained portable electronics.

For engineers reviewing the PMZB370UNE,315 datasheet, PMZB370UNE,315 pinout, PMZB370UNE,315 application, or PMZB370UNE,315 equivalent, key selection criteria include its 0.37 mm profile height, low 0.77 V typical gate threshold voltage, fast 11 ns turn-on delay, 52 pF input capacitance, and compatibility with 1.8 V–4.5 V logic-level gate drive in battery-powered switching circuits.

Technical Context

This device employs Trench MOSFET technology to achieve low R_DS(on) and fast switching performance in a 1.0 × 0.6 × 0.37 mm footprint. Its sub-1 V gate threshold enables direct interfacing with 1.8 V and 2.5 V microcontroller GPIOs without level shifting.

The SOT883B package uses a 3-terminal configuration (Gate, Source, Drain) with exposed drain pad for thermal conduction. Thermal resistance from junction to ambient is 150 K/W on FR4 PCB with 1 cm² drain pad, supporting power dissipation up to 715 mW at 25 °C ambient.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage before avalanche; suitable for 24 V rail and USB PD auxiliary switches
R_DS(on)	370 mΩ typ @ V_GS = 4.5 V, I_D = 500 mA - Enables <185 mW conduction loss at 500 mA, critical for thermally constrained wearables
V_GS(th)	0.77 V typ - Ensures reliable turn-on with 1.8 V logic; avoids marginal switching in low-voltage IoT nodes
Q_G(tot)	0.77 nC typ - Supports >1 MHz switching with minimal gate drive power, reducing MCU GPIO stress
C_iss	52 pF typ @ V_DS = 25 V - Limits capacitive loading on driving ICs and improves EMI behavior in high-frequency SMPS
ESD Rating	2 kV HBM - Provides robustness against handling discharge in automated SMT assembly lines
T_j max	150 °C - Allows operation in sealed enclosures with limited airflow, such as smart sensor housings

Pinout & Package

DFN1006B-3 (SOT883B) is a 3-terminal leadless plastic package measuring 1.0 × 0.6 × 0.37 mm with an exposed drain pad for thermal and electrical connection. The ultra-thin profile supports co-placement under connectors or displays in ultra-slim mobile designs.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate (G)	Control terminal; accepts 0–4.5 V logic signals; low 0.77 V threshold ensures full enhancement with 1.8 V MCUs
2	Source (S)	Reference node for gate drive; tied to system ground in low-side switch configurations
3	Drain (D)	High-current output path; electrically and thermally connected to PCB copper pour via exposed pad

Key Features

Feature	Design Value
Ultra-thin package height	0.37 mm - Enables placement beneath mechanical components (e.g., buttons, flex cables) without Z-axis interference
Low R_DS(on) at 1.8 V drive	630 mΩ max @ V_GS = 1.8 V, I_D = 100 mA - Maintains efficiency in always-on sensor nodes powered by coin cells
Fast switching speed	11 ns turn-on delay + 9 ns rise time - Reduces transition losses in PWM-driven LED dimming and motor control
Integrated ESD protection	2 kV HBM - Eliminates need for external TVS diodes in handheld device front-end switching stages
Trench MOSFET architecture	Optimized cell pitch and channel geometry - Delivers higher current density than planar MOSFETs in same footprint

Applications

Relay Driver

High-Speed Line Driver

Use Scenario: Replacing electromechanical relays in compact industrial I/O modules where size and lifetime are critical.

IC Role / Device Role / Timing Role: Low-side switch controlling relay coil current (≤500 mA) with logic-level gate drive.

Use Value: Eliminates relay bounce, extends service life beyond 10⁷ cycles, and reduces board area by 60% versus SO-8 relay drivers.

Use Scenario: Driving differential signaling lines in USB 2.0 or MIPI D-PHY interfaces within smartphone camera modules.

IC Role / Device Role / Timing Role: Active termination switch enabling dynamic impedance matching during high-speed data bursts.

Use Value: 9 ns rise time preserves signal integrity up to 480 Mbps; 52 pF C_iss minimizes stub capacitance on 50 Ω traces.

Low-Side Load Switch

Switching Circuits

Use Scenario: Power gating of Bluetooth LE subsystems in hearables to extend battery runtime between charges.

IC Role / Device Role / Timing Role: Controlled power path between Li-ion battery and BLE SoC, activated by 1.8 V GPIO.

Use Value: 0.77 V V_GS(th) guarantees full turn-on with SoC's lowest I/O voltage; 370 mΩ R_DS(on) limits dropout to <185 mV at 500 mA.

Use Scenario: Pulse-width modulated backlight dimming in automotive instrument clusters using 24 V supply rails.

IC Role / Device Role / Timing Role: High-frequency (≥10 kHz) synchronous switch in buck-derived LED driver topology.

Use Value: 0.77 nC Q_G(tot) enables efficient gate drive with minimal MCU resource usage; 30 V rating accommodates load dump transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-side switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN10H015LPS-13	Higher V_DS (100 V), larger SOT-23 package (2.9 × 1.3 × 1.0 mm), 15 mΩ R_DS(on) at 4.5 V	Used in 48 V industrial controls; incompatible with ultra-thin form factors due to 1.0 mm height	Select when higher voltage margin or lower conduction loss justifies 3.7× larger footprint and 2.7× taller profile
AO3414	SOT-23 package (2.9 × 1.3 × 1.0 mm), 50 mΩ R_DS(on) at 4.5 V, 1.4 V V_GS(th) min	Requires ≥2.5 V logic for guaranteed turn-on; unsuitable for 1.8 V microcontrollers	Choose only if system uses 3.3 V GPIO and prioritizes R_DS(on) over board space and low-voltage compatibility

Compared with DMN10H015LPS-13 and AO3414, PMZB370UNE,315 uniquely balances 1.8 V logic compatibility, 0.37 mm height, and 370 mΩ R_DS(on) - making it the sole option for space- and voltage-constrained battery-powered devices requiring reliable low-threshold switching.

Availability

PMZB370UNE,315 is available at Aetrix Electronics and suitable for portable medical monitors, wireless earbud power management, and compact industrial sensors requiring stable component supply across multi-year production cycles.

Supply support for PMZB370UNE,315 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions, with manufacturing rooted in process innovation and automotive-grade quality systems.

The PMZB370UNE,315 belongs to Nexperia's TrenchMOS portfolio designed specifically for space-constrained, low-voltage switching applications in consumer portables and IoT edge nodes - emphasizing thinness, logic-level drive, and robust ESD tolerance.

FAQ

What is the maximum continuous drain current for PMZB370UNE,315 at 100 °C ambient temperature?

The maximum continuous drain current is 560 mA at Tamb = 100 °C with V_GS = 4.5 V, as specified in Table 5 (Limiting Values). This derating reflects thermal constraints of the DFN1006B-3 package on standard FR4 PCBs without enhanced heatsinking.

Can PMZB370UNE,315 be used with 1.8 V microcontroller GPIOs without a level shifter?

Yes - its typical gate threshold voltage is 0.77 V with a maximum of 1.05 V at 25 °C, ensuring full enhancement at 1.8 V drive. Data sheet Figure 11 confirms strong Id-Vgs transfer characteristics starting below 1 V, validating direct 1.8 V interface.

Does the DFN1006B-3 package require special soldering profiles or stencil design?

Yes - the reflow footprint in Figure 20 specifies 0.3 mm solder paste thickness, 0.4 mm land width, and 0.7 mm land length per side. Reflow must follow IPC-J-STD-020 for MSL1 devices, with peak temperature ≤260 °C and time above 217 °C limited to 60–150 seconds.

Is PMZB370UNE,315 qualified for automotive applications?

No - the datasheet explicitly states this device is not automotive-qualified. It lacks AEC-Q101 stress testing, has no automotive-grade qualification status, and is intended for consumer and industrial applications only per Section 12.3 of the data sheet.

PMZB370UNE,315 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

PMZB370UNE,315 FAQ

1.How can I place an order for PMZB370UNE,315 through Aetrix?

Please submit a Request for Quotation (RFQ) for PMZB370UNE,315 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMZB370UNE,315 reliable?

The price and inventory of PMZB370UNE,315 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMZB370UNE,315 is usually 5 days.

3.What payment methods are accepted for PMZB370UNE,315?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMZB370UNE,315 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMZB370UNE,315?

PMZB370UNE,315 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMZB370UNE,315 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMZB370UNE,315?

For technical support, including PMZB370UNE,315 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMZB370UNE,315 requirements.

6.How does Aetrix verify that PMZB370UNE,315 is sourced from the original manufacturer or authorized distributors?

All PMZB370UNE,315 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMZB370UNE,315 meets industry standards.

7.What is the process for return or replacement of PMZB370UNE,315?

All PMZB370UNE,315 units undergo pre-shipment inspection (PSI). If there is an issue with PMZB370UNE,315, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMZB370UNE,315 part is unused and in its original packaging.

Return procedure for PMZB370UNE,315:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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