NXP Semiconductors PMZB950UPEL315

Overview

PMZB950UPEL from Nexperia is a P-channel enhancement-mode Trench MOSFET in a leadless DFN1006B-3 (SOT883B) package, rated for -20 V drain-source voltage, 1.02 Ω R_DS(on) at V_GS = -4.5 V and I_D = -500 mA, and optimized for high-side load switching in space-constrained portable electronics.

For engineers reviewing the PMZB950UPEL datasheet, PMZB950UPEL pinout, PMZB950UPEL application, or PMZB950UPEL equivalent, this page delivers verified electrical parameters, thermal behavior under FR4 PCB mounting, ESD robustness (>1 kV HBM), and precise pin mapping for layout validation and reliability assessment.

Technical Context

This device operates as a normally-off P-channel switch requiring negative gate drive relative to source. Its trench MOSFET architecture enables low on-resistance in an ultra-small 1.0 × 0.6 × 0.37 mm footprint, with gate threshold voltage (V_GS(th)) ranging from -0.45 V to -0.95 V at 25 °C.

Thermal performance is defined by junction-to-ambient resistance of 305–360 K/W on standard FR4 and 150–175 K/W with a 1 cm² drain pad - critical for continuous current derating above 25 °C ambient per Fig. 2 and Fig. 3.

Key Specifications

Pinout & Package

PMZB950UPEL uses the DFN1006B-3 (SOT883B) leadless ultra-small plastic package: 1.0 × 0.6 × 0.37 mm body with three solder lands, top-side marking "0101 1111", and exposed drain terminal for thermal conduction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Compared with DMN2011LKQ-7 and AO3401, PMZB950UPEL uniquely balances ultra-miniaturization (1.0 × 0.6 mm), sub-1.1 Ω on-resistance, and low gate charge - making it optimal for next-generation wearables and implantable devices where volume and thermal density are primary constraints.

Availability

PMZB950UPEL is available at Aetrix Electronics and suitable for high-side load switching, relay replacement, and high-speed line driving applications requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.

Supply support for PMZB950UPEL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade components.

PMZB950UPEL belongs to Nexperia's TrenchMOS family designed specifically for space- and power-constrained portable electronics, emphasizing miniaturization, low R_DS(on), and robust manufacturability in ultra-small packages.

FAQ

What is the maximum continuous drain current for PMZB950UPEL at 100 °C ambient temperature?

The PMZB950UPEL supports -300 mA continuous drain current at T_amb = 100 °C, as specified in Table 5 (Limiting values). This derating reflects thermal limitations of the DFN1006B-3 package on standard FR4 PCBs and must be applied alongside junction temperature monitoring in thermally isolated enclosures.

Does PMZB950UPEL have built-in ESD protection, and what level is certified?

Yes, PMZB950UPEL features integrated ElectroStatic Discharge (ESD) protection rated >1 kV Human Body Model (HBM), per Section 2 of the datasheet. This eliminates need for external TVS diodes in most handheld and wearable assembly environments, provided handling follows standard ESD protocols.

Can PMZB950UPEL be used as a direct replacement for SOT-23 P-channel MOSFETs like AO3401?

No - PMZB950UPEL uses the DFN1006B-3 (SOT883B) package with 1.0 × 0.6 mm dimensions and bottom-side thermal pad, whereas AO3401 uses SOT-23 (3.0 × 1.4 mm). Pinout differs (G-S-D vs G-S-D orientation), and land pattern is incompatible; redesign of footprint and stencil is required.

What is the gate-source threshold voltage range for PMZB950UPEL, and how does it vary with temperature?

The PMZB950UPEL has a V_GS(th) range of -0.45 V to -0.95 V at 25 °C (Table 7), with typical value -0.7 V. As shown in Fig. 13, threshold voltage decreases (becomes less negative) with rising junction temperature - reaching approximately -0.5 V at 150 °C - affecting turn-on consistency in thermally dynamic systems.

How is thermal performance affected when PMZB950UPEL is mounted without an extended drain pad?

Without a 1 cm² drain pad, PMZB950UPEL's junction-to-ambient thermal resistance increases from 150–175 K/W to 305–360 K/W (Table 6). This reduces maximum allowable continuous power dissipation from 715 mW to 360 mW at 25 °C ambient - requiring strict current derating or active cooling in sustained-load scenarios.