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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

NXP Semiconductors PSMN003-30B,118

Name: PSMN003-30B,118
Brand: NXP Semiconductors
SKU: PSMN003-30B,118
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN003-30B,118

Manufacturer:: NXP Semiconductors

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: PSMN003-30B,118.pdf

Description:: MOSFET N-CH 30V 75A D2PAK

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Product details

Overview

PSMN003-30B,118 from NXP Semiconductors (formerly Philips) is an N-channel logic-level enhancement-mode power MOSFET using TrenchMOS™ technology in SOT404 (D2-PAK) package. It delivers 75 A DC drain current at V_GS = 10 V, 2.4 mΩ R_DS(on) at 25 °C, and 30 V V_DS rating - optimized for high-frequency DC–DC conversion on server and workstation motherboards.

For engineers reviewing the PSMN003-30B,118 datasheet, PSMN003-30B,118 pinout, PSMN003-30B,118 application, or PSMN003-30B,118 equivalent, key selection criteria include low R_DS(on) at 5 V gate drive, avalanche ruggedness (500 mJ), thermal resistance (0.65 K/W j-mb), and D2-PAK mounting compatibility for high-power switching nodes.

Technical Context

This device operates as a unidirectional high-side or low-side switch in synchronous buck converters and OR-ing circuits. Its TrenchMOS™ structure enables fast switching (t_d(on) = 33 ns, t_f = 115 ns) and low gate charge (Q_g(tot) = 170 nC), supporting >500 kHz operation with minimal switching loss.

The source-drain diode exhibits V_SD = 0.85 V at 25 A and ISM = 400 A peak, enabling robust body-diode conduction during dead-time intervals. Junction temperature range spans −55 to +175 °C, with R_DS(on) increasing to 4.32 mΩ at 175 °C - critical for thermal design validation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - maximum blocking voltage for 12 V input rail systems with margin
R_DS(on) @ V_GS = 10 V	2.4 mΩ typ - enables <1.9 W conduction loss at 75 A, reducing heatsink requirements
R_DS(on) @ V_GS = 5 V	3.3 mΩ typ - ensures full enhancement with standard logic-level drivers (e.g., microcontroller GPIO)
E_AS	500 mJ - withstands unclamped inductive energy in hard-switched topologies without failure
R_th(j-mb)	0.65 K/W - allows direct heatsink mounting for 230 W P_tot dissipation at T_mb = 25 °C
Q_g(tot)	170 nC - determines gate driver power requirement and switching speed trade-off
V_GS(th)	1–3 V - guarantees turn-on with 3.3 V or 5 V control signals, minimizing false triggering

Pinout & Package

SOT404 (D2-PAK) package with isolated mounting base; pin 2 (drain) is internally connected to the exposed metal tab and cannot be externally wired per datasheet note [1]. The package supports high-current PCB routing via the tab and solderable leads.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate (G)	Control terminal; requires ≤±20 V drive; 100 nA leakage ensures low standby current
2	Drain (D)	Internally bonded to metal tab; primary high-side switching node; no external connection possible
3	Source (S)	Power return path; referenced to gate drive ground; carries full load current and diode forward current

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS = 5 V, eliminating need for level-shifting circuitry in 3.3 V/5 V systems
TrenchMOS™ technology	Delivers 30% lower R_DS(on) vs. planar MOSFETs of same die size, improving power density
Avalanche-rated	Guaranteed 500 mJ non-repetitive energy handling enables robustness in inductive load transients
Low Q_gd/Q_gs ratio	45 nC / 44 nC ≈ 1.02 - minimizes Miller effect, enabling stable high-speed switching with moderate gate resistance
High-temperature R_DS(on) stability	Only 1.8× increase from 25 °C to 175 °C - simplifies thermal derating in compact enclosures

Applications

Server VRM Output Stage	OR-ing Diode Replacement
Use Scenario: High-current, high-efficiency output stage in 12 V → 1.2 V server VRMs operating at 300–600 kHz. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch, replacing Schottky diodes to reduce conduction loss. Use Value: 2.4 mΩ R_DS(on) cuts I²R loss by >70% vs. 0.5 V Schottky, enabling >95% efficiency at 100 A loads.	Use Scenario: Redundant 12 V power supply backplane where two supplies feed a common bus. IC Role / Device Role / Timing Role: Active OR-ing switch controlling current flow direction based on supply voltage priority. Use Value: Low V_GS(th) (1–3 V) ensures precise turn-on threshold; fast switching prevents cross-conduction during supply switchover.
Workstation DC–DC Converter	Industrial Motor Drive Half-Bridge
Use Scenario: Point-of-load converter on high-end workstation motherboards delivering GPU/CPU core voltage. IC Role / Device Role / Timing Role: High-frequency power switch in synchronous buck topology with tight layout constraints. Use Value: 170 nC total gate charge enables clean 500 kHz switching with standard 2 A gate drivers, minimizing layout EMI.	Use Scenario: Low-side switch in 24 V industrial BLDC motor drive half-bridge with regenerative braking. IC Role / Device Role / Timing Role: Power switching element handling bidirectional current during PWM and freewheeling phases. Use Value: 400 A peak drain current and 500 mJ avalanche energy tolerate motor inductive kickback without snubbers.

Server VRM Output Stage

OR-ing Diode Replacement

Use Scenario: High-current, high-efficiency output stage in 12 V → 1.2 V server VRMs operating at 300–600 kHz.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch, replacing Schottky diodes to reduce conduction loss.

Use Value: 2.4 mΩ R_DS(on) cuts I²R loss by >70% vs. 0.5 V Schottky, enabling >95% efficiency at 100 A loads.

Use Scenario: Redundant 12 V power supply backplane where two supplies feed a common bus.

IC Role / Device Role / Timing Role: Active OR-ing switch controlling current flow direction based on supply voltage priority.

Use Value: Low V_GS(th) (1–3 V) ensures precise turn-on threshold; fast switching prevents cross-conduction during supply switchover.

Workstation DC–DC Converter

Industrial Motor Drive Half-Bridge

Use Scenario: Point-of-load converter on high-end workstation motherboards delivering GPU/CPU core voltage.

IC Role / Device Role / Timing Role: High-frequency power switch in synchronous buck topology with tight layout constraints.

Use Value: 170 nC total gate charge enables clean 500 kHz switching with standard 2 A gate drivers, minimizing layout EMI.

Use Scenario: Low-side switch in 24 V industrial BLDC motor drive half-bridge with regenerative braking.

IC Role / Device Role / Timing Role: Power switching element handling bidirectional current during PWM and freewheeling phases.

Use Value: 400 A peak drain current and 500 mJ avalanche energy tolerate motor inductive kickback without snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404PBF	R_DS(on) = 4.0 mΩ @ 10 V; TO-220 package; higher thermal resistance (1.25 K/W j-mb)	Limited to lower-frequency (<200 kHz) or lower-current designs due to higher conduction and switching losses	Choose when cost sensitivity outweighs efficiency and thermal performance in non-high-density layouts
STP75NF75	R_DS(on) = 12.5 mΩ @ 10 V; TO-220; lacks avalanche rating; V_GS(th) = 2–4 V	Not suitable for OR-ing or high-reliability inductive switching; requires tighter gate drive control	Select only for basic switching where avalanche ruggedness and sub-3 mΩ R_DS(on) are not required

Compared with IRF1404PBF and STP75NF75, PSMN003-30B,118 provides superior thermal performance (0.65 K/W), lower R_DS(on), and guaranteed avalanche capability - making it the preferred choice for high-efficiency, high-reliability 30 V power stages.

Availability

PSMN003-30B,118 is available at Aetrix Electronics and suitable for server VRMs, workstation DC–DC converters, OR-ing power systems, and industrial motor drives requiring stable component supply across long production cycles.

Supply support for PSMN003-30B,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors, formerly Philips Semiconductors, is a global leader in high-performance analog and power semiconductor solutions, headquartered in Eindhoven, Netherlands.

The PSMN003-30B,118 belongs to the TrenchMOS™ logic-level power MOSFET family, engineered specifically for high-efficiency, high-frequency switching in computing and industrial power conversion applications.

FAQ

What is the maximum continuous drain current for PSMN003-30B,118 at 100 °C mounting base temperature?

The PSMN003-30B,118 supports 75 A DC drain current at T_mb = 100 °C with V_GS = 10 V, as confirmed in Table 3 (Limiting Values). This rating remains unchanged from the 25 °C value due to its low R_DS(on) temperature coefficient and robust thermal design - enabling sustained high-current operation in thermally constrained environments.

Does PSMN003-30B,118 have avalanche capability, and what is the rated energy?

Yes, PSMN003-30B,118 is fully avalanche-rated with E_AS = 500 mJ (non-repetitive) under specified test conditions (unclamped inductive load, I_D = 75 A, V_DD = 15 V, R_GS = 50 Ω, V_GS = 10 V, starting T_j = 25 °C). This capability is explicitly documented in Table 3 and enables reliable operation in inductive switching applications without external protection.

Can PSMN003-30B,118 be driven directly by a 3.3 V microcontroller GPIO?

Yes, PSMN003-30B,118 is a logic-level MOSFET with V_GS(th) = 1–3 V (min–max at 25 °C), ensuring full enhancement at 3.3 V gate drive. Its R_DS(on) = 3.3 mΩ typ at V_GS = 5 V and ID = 25 A confirms usable conduction even at 3.3 V - though gate driver buffering is recommended for high-speed switching to manage 170 nC Q_g(tot).

What is the thermal resistance from junction to mounting base for PSMN003-30B,118?

The thermal resistance from junction to mounting base (R_th(j-mb)) for PSMN003-30B,118 is 0.65 K/W, as specified in Table 4. This value applies to the SOT404 (D2-PAK) package with proper heatsink mounting and is critical for calculating junction temperature rise under 230 W total power dissipation at T_mb = 25 °C.

Is pin 2 of PSMN003-30B,118 electrically accessible for external connection?

No - pin 2 of PSMN003-30B,118 is the drain terminal, which is internally bonded to the exposed metal tab of the SOT404 (D2-PAK) package. As stated in the datasheet pinning note [1], "It is not possible to make connection to pin 2 of the SOT404 package." External connections must be made only to pins 1 (gate) and 3 (source); the drain is accessed solely via the tab.

PSMN003-30B,118 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: TrenchMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 2.8mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 170 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 230W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

PSMN003-30B,118 FAQ

1.How can I place an order for PSMN003-30B,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN003-30B,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN003-30B,118 reliable?

The price and inventory of PSMN003-30B,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN003-30B,118 is usually 5 days.

3.What payment methods are accepted for PSMN003-30B,118?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN003-30B,118 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN003-30B,118?

PSMN003-30B,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN003-30B,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN003-30B,118?

For technical support, including PSMN003-30B,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN003-30B,118 requirements.

6.How does Aetrix verify that PSMN003-30B,118 is sourced from the original manufacturer or authorized distributors?

All PSMN003-30B,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN003-30B,118 meets industry standards.

7.What is the process for return or replacement of PSMN003-30B,118?

All PSMN003-30B,118 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN003-30B,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN003-30B,118 part is unused and in its original packaging.

Return procedure for PSMN003-30B,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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